JP2012186274A - Light-emitting device, led chip, led wafer and package substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light-emitting device which improves extraction efficiency for light radiated from an LED chip mounted on a package substrate and also can reduce color irregularities.SOLUTION: The light-emitting device includes a blue LED chip 81' disposed on a package substrate 8 and a wavelength conversion layer 7 covering the top and side surfaces of the blue LED ship 81', which converts the wavelength of light radiated from a light-emitting layer 2 of the blue LED chip 81'. It also includes, on the package substrate side rather than the light-emitting layer 2, a reflection plane 3 which reflects light from the light-emitting layer 2. A distance D1, regarding a direction perpendicular to the reflection plane 3, from the outermost surface 5b of a reflection plane forming layer 5 to the reflection plane 3 is set to be equal to or greater than a prescribed dimension which suits a thickness H of an outside extension part 7a of the wavelength conversion layer 7 extending from a region where the blue LED chip 81' on the package substrate 8 is disposed to the outside thereof.

Description

  The present invention relates to an LED wafer, and more particularly to a wafer that becomes an LED chip by being divided.

  The present invention also relates to an LED chip obtained by dividing such an LED wafer.

  The present invention also relates to a light emitting device in which an LED chip is mounted on a package substrate.

  The present invention also relates to a package substrate used for constituting such a light emitting device.

  A general blue LED chip is obtained by dicing a wafer (called an “LED wafer”) having a GaN layer and an electrode (including ITO (tin-added indium oxide)) on a sapphire substrate into a plurality of pieces. It is manufactured by.

  Such a blue LED chip is mounted on a package as follows, for example, so as to constitute a light emitting device that generates white light. First, as shown in FIG. 16, the blue LED chip 100 is fixed to a predetermined position on the package substrate 108 with a die bond agent (not shown), and the electrodes 110 a and 110 b on the package substrate 108 and the blue LED chip 100 are fixed. Wire wirings 109a and 109b are provided between the electrode patterns 104a and 104b. Next, after the phosphor kneaded resin is applied as the wavelength conversion layer 107 so as to cover the upper surface 100a and the side surface 100b of the blue LED chip 100, the phosphor is precipitated. Finally, the blue LED chip 100 and the wavelength conversion layer 107 are sealed with a transparent resin (not shown). The wavelength conversion layer 107 has a portion extending outward from the region where the blue LED chip 100 is disposed on the package substrate 108 (this is referred to as “outward extending”) so as to securely cover the blue LED chip 100. 107a "is provided as a margin.

  During operation, part of the blue light emitted from the blue LED chip 100 excites the phosphor contained in the wavelength conversion layer 107 to generate, for example, yellow light as fluorescence. As a result, white light is generated by the color mixture of the portion of the blue light emitted from the blue LED chip 100 that has not been converted and the yellow light generated by the wavelength conversion layer 107.

  As is known, the die bonding agent may cause deterioration such as discoloration due to the ultraviolet component of the light generated by the blue LED chip 100. Light emitted from the GaN layer 102 of the blue LED chip through the sapphire substrate 101 toward the package substrate 108 is absorbed by the deteriorated die bond agent, and is also absorbed by the package substrate 108 that generally has a low reflectance. For this reason, the light extraction efficiency decreases.

  Further, when the thickness of the wavelength conversion layer 107 covering the blue LED chip 100, that is, the amount of the phosphor is partially different, the amount of light emitted from the blue LED chip 100 and taken out to the outside and the light emitted from the phosphor are externally emitted. The amount of light extracted is partially different. For this reason, the amount of light emitted from the blue LED chip 100 increases or the amount of light emitted from the phosphor increases on the light emitting surface of the light emitting device, which is considered to cause color unevenness. Furthermore, when compared between light emitting devices, it causes a difference in chromaticity between the light emitting devices.

  Therefore, as disclosed in Patent Document 1 (Japanese Patent Laid-Open No. 2001-7397), a reflective layer that reflects light on the surface of the blue LED chip 100 on the side of the package substrate 108 (the lower surface of the sapphire substrate 101). A configuration for providing (indicated by reference numeral 103 in FIG. 16) is proposed. During operation, light emitted from the GaN layer 102 of the blue LED chip 100 through the sapphire substrate 101 toward the package substrate 108 may be reflected by the reflective layer 103 and absorbed by the die bond agent or the package substrate 108. Absent.

  Conventionally, as disclosed in Patent Document 2 (Japanese Patent Laid-Open No. 2009-94262), a method of manufacturing a light emitting device in which the blue LED chip 100 is covered with a phosphor sheet formed in a desired thickness in advance has been proposed. Has been. A phosphor sheet prepared so as to have a uniform thickness distribution by filling the phosphor with a high concentration is used as the wavelength conversion layer 107, and the entire surface of the blue LED chip 100 is covered with the phosphor sheet.

JP 2001-7397 A JP 2009-94262 A

  However, in the element described in Patent Document 1, no consideration is given to the thickness D of the reflective layer 103, particularly the relationship between the thickness D of the reflective layer 103 and the thickness H of the outer extending portion 107 a of the wavelength conversion layer 107. It has not been. Therefore, for example, as shown in FIG. 16, when the thickness H of the outer extending portion 107a of the wavelength conversion layer 107 is thicker than the thickness D of the reflective layer 103, the side surface 100b of the blue LED chip 100, particularly the sapphire substrate. The light which is going to be emitted from the side surface of the 101 sideways is blocked by the outer extending portion 107a of the wavelength conversion layer 107, which causes a reduction in light extraction efficiency.

  Further, in the light emitting device described in Patent Document 2, when the light emitted from the blue LED chip 100 is emitted not only from the upper surface of the blue LED chip 100 but also from the side surface, the outer extended portion of the wavelength conversion layer 107 No consideration is given to the influence on the color unevenness on the light emitting surface of the light emitting device 107a. For example, as shown in FIG. 17A, the light from the blue LED chip 100 is not only emitted upward from the upper surface of the blue LED chip 100 as indicated by the dashed arrow A1, but also from the side surface of the blue LED chip 100. When the light is also emitted sideways as indicated by the dashed arrow A2, the distance L that the light emitted from the upper surface of the blue LED chip 100 passes through the phosphor sheet 107 is the light emitted from the side surface of the blue LED chip 100. Becomes shorter than the distance Lb passing through the phosphor sheet 107 and the outer extending portion 107a. For this reason, the extraction efficiency of the light emitted from the blue LED chip 100 is lowered, and color unevenness occurs on the light emitting surface of the light emitting device.

  As shown in FIG. 17B, the phosphor sheet 107 is cut by the light emitting device manufacturing method described in Patent Document 2 so as to cover only the upper surface and side surfaces of the blue LED chip 100 without excess or deficiency. Assume that the blue LED chip 100 and the phosphor sheet 107 are aligned. In this case, the distance L can be made equal to the distance Lc through which the light emitted from the side surface of the blue LED chip 100 passes through the phosphor sheet 107.

  However, as shown in FIG. 18, when the cut size of the phosphor sheet 107 becomes small due to the variation in the cut size of the phosphor sheet 107, the periphery of the blue LED chip 100 can be completely covered with the phosphor sheet 107. Therefore, the chromaticity difference between the portion where the light emitted from the blue LED chip 100 passes through the portion where the light passes through the phosphor sheet 107 and the portion where the light does not pass through becomes large, which causes uneven color. On the other hand, as shown in FIG. 19, when the cut size of the phosphor sheet 107 is increased, the phosphor sheet 107 can completely cover the blue LED chip 100. However, the surplus portion of the phosphor sheet 107 becomes the outer extending portion 107a, and as described with reference to FIG. 17A, the extraction efficiency of the light emitted from the blue LED chip 100 is reduced and the light emission of the light emitting device. Color unevenness occurs on the surface.

  Furthermore, as shown in FIG. 20, even if the cut size of the phosphor sheet 107 is large enough to cover only the entire surface of the blue LED chip 100, the phosphor sheet 107 is aligned with the blue LED chip 100. When shifted, the blue LED chip 100 cannot be covered with the phosphor sheet 107 on the one hand, and the surplus portion of the phosphor sheet 107 becomes the outer extending portion 107a on the other hand. Therefore, the extraction efficiency of light emitted from the side surface of the blue LED chip 100 is lowered, and color unevenness occurs on the light emitting surface of the light emitting device.

  Accordingly, an object of the present invention is to provide a light emitting device capable of improving the extraction efficiency of light emitted from an LED chip mounted on a package substrate and reducing color unevenness.

  Another object of the present invention is to provide an LED chip capable of improving the extraction efficiency of light emitted from the mounted LED chip and reducing color unevenness.

  Another object of the present invention is to provide an LED wafer that becomes an LED chip by dividing the LED wafer, which can improve the extraction efficiency of light emitted from the mounted LED chip and reduce color unevenness. It is in.

  Another object of the present invention is to provide a package substrate capable of improving the extraction efficiency of light emitted from a mounted LED chip and reducing color unevenness.

In order to solve the above problems, a light-emitting device of the present invention includes:
An LED chip disposed on the package substrate;
A wavelength conversion layer that covers the upper and side surfaces of the LED chip and converts the wavelength of light emitted from the light emitting layer of the LED chip;
The wavelength conversion layer has an outer extending portion that extends outward from a region where the LED chip is disposed on the package substrate,
The LED chip has a reflective surface that is disposed on the package substrate side of the LED chip along the package substrate and reflects light emitted from the light emitting layer to the package substrate side,
With respect to the direction perpendicular to the reflecting surface, the distance from the upper surface of the region where the outer extending portion of the wavelength conversion layer extends in the package substrate to the reflecting surface is the outer extending portion of the wavelength converting layer. It is characterized by being set to a predetermined dimension or more according to the thickness.

  In the light emitting device according to the present invention, the wavelength conversion layer for converting the wavelength of the light emitted from the light emitting layer of the LED chip is disposed so that the LED chip is disposed on the package substrate and covers the upper surface and the side surface of the LED chip. Is provided. The wavelength conversion layer is provided with an outer extending portion that extends outward from the region where the LED chip is disposed on the package substrate as a margin. A reflective surface is disposed along the package substrate closer to the package substrate than the light emitting layer of the LED chip. The reflecting surface reflects light emitted from the light emitting layer to the package substrate side. Here, with respect to the direction perpendicular to the reflection surface, the distance from the upper surface of the region of the package substrate where the outer extension portion of the wavelength conversion layer extends to the reflection surface is the outer side of the wavelength conversion layer. The predetermined dimension or more is set according to the thickness of the extending portion. Therefore, the distance from the upper surface of the region where the outer extension portion of the wavelength conversion layer of the package substrate extends in advance to the reflection surface is larger than the thickness of the outer extension portion of the wavelength conversion layer, for example. If the dimensions are set, the height of the reflecting surface on the package substrate exceeds the height of the outer extending portion of the wavelength conversion layer. Therefore, it is possible to effectively prevent the light emitted from the side surface of the LED chip from being blocked by the outer extending portion of the wavelength conversion layer. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

In the light emitting device of one embodiment,
The LED chip is
A laminated substrate including the light emitting layer;
A reflective surface forming body that forms the reflective surface along one main surface of the two main surfaces of the laminated substrate,
The outermost surface of the reflective surface forming body is in contact with the package substrate.

  Here, the “outermost surface” of the reflecting surface forming body means a surface far from the laminated substrate.

  In the light emitting device according to this embodiment, the LED chip includes the reflective surface forming body, and is mounted on the package substrate in a state where the outermost surface of the reflective surface forming body is die-bonded. Therefore, the reflective surface can be formed with high accuracy simply by mounting the LED chip, and productivity can be improved.

In the light emitting device of one embodiment,
A structure is provided on the outermost surface of the reflecting surface forming body,
The outermost surface of the structure is in contact with the package substrate.

  Here, the “outermost surface” of the structure means a surface far from the laminated substrate.

  In the light emitting device of this embodiment, since the LED chip is mounted on the package substrate via the structure, the material of the reflective surface forming body is different from the material of the structure. Thereby, the freedom degree of the setting of the thickness of the said reflective surface formation body increases.

In the light emitting device of one embodiment,
The dimensions are set so that the height of the reflective surface from the package substrate is 10 μm or more when the LED chip is disposed with the outermost surface of the reflective surface forming body or the structure facing the package substrate. It is characterized by being.

  Since the particle diameter of the phosphor that is often used for mounting the LED chip is several μm, the height of the reflecting surface from the package substrate is preferably 10 μm or more.

  Further, when the wavelength conversion layer used for mounting the LED chip is made of a phosphor sheet in which the phosphor is dispersed and held in advance in the resin, the thickness of the phosphor sheet that is often used at present is approximately 25 μm to Since the thickness is 30 μm, the height of the reflecting surface from the package substrate is preferably 30 μm or more.

  Further, when the wavelength conversion layer used for mounting the LED chip is formed by applying a phosphor kneaded resin and then precipitating the phosphor, the thickness of the wavelength conversion layer is approximately 100 μm to 150 μm. There is a low concentration of the phosphor in the upper part of the outer extending portion of the wavelength conversion layer. In that case, the height of the reflecting surface from the package substrate is preferably 50 μm or more. Thereby, the light quantity blocked | interrupted by the outer side extension part of a wavelength conversion layer is fully reduced.

In the light emitting device of one embodiment,
The reflective surface forming body is made of one or more of a metal material, a white material, and an opaque material having substantially the same color as the light emission color of the light emitting layer.

  In the light emitting device of this embodiment, the reflection surface can be preferably configured. That is, when the reflective surface forming body is made of one or two or more of a metal material, a white material, and an opaque material having substantially the same color as the luminescent color of the light emitting layer, The light reaching from the light emitting layer can be reliably reflected regardless of the difference in refractive index and the incident angle.

  For example, when the reflective surface forming body is made of two materials, a metal material and a white insulating material, the degree of freedom in designing the LED chip is increased. For example, the metal material of the electrode formed on the surface of the laminated substrate can be used as a part of the reflecting surface forming body.

In the light emitting device of one embodiment,
The reflective surface forming body includes a first reflective surface forming body made of a transparent material having a refractive index lower than a refractive index of a portion along the reflective surface forming body of the laminated substrate, and a first made of a metal material. 2 reflective surface forming bodies,
An interface between the first reflecting surface forming body and the second reflecting surface forming body forms the reflecting surface.

  In the light emitting device according to this embodiment, the light that has reached the reflecting surface forming body from the light emitting layer is substantially transmitted through the first reflecting surface forming body, and the first reflecting surface forming body and the second reflecting surface are formed. Reflected by the reflecting surface between the surface forming body. In the LED chip of this light emitting device, the reflective surface forming body is composed of two layers of the first reflective surface forming body and the second reflective surface forming body, so that the material for forming the reflective surface formed body can be freely selected. The degree increases.

In the light emitting device of one embodiment,
The reflective surface forming body constitutes an electrode.

  In the light emitting device of this embodiment, since the reflecting surface forming body is used as an electrode, it is not necessary to provide an electrode formed on the surface of the laminated substrate, and the configuration of the light emitting device can be simplified.

In the light emitting device of one embodiment,
The package substrate has a reflective surface forming body that forms the reflective surface, which is disposed along the LED chip placement region on the LED chip placement region on which the LED chip is to be placed,
The outermost surface of the reflective surface forming body is in contact with the package substrate.

  In the light emitting device of this embodiment, since the package substrate has a reflecting surface forming body, it is not necessary to provide a reflecting surface on the LED chip.

In the light emitting device of one embodiment,
The height of the reflection surface is higher than the height of the upper surface of the outer region corresponding to the outer side of the region where the outer extending portion of the wavelength conversion layer extends in the package substrate.

  In the light emitting device according to this embodiment, the height of the reflection surface exceeds the height of the upper surface of the outer region. Therefore, the light emitted from the side surface of the LED chip to the side can be prevented from being blocked by the outer region. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

In the light emitting device of one embodiment,
Of the package substrate, the height of the upper surface of the region where the outer extension portion of the wavelength conversion layer extends is higher than the upper surface of the outer region corresponding to the outer side of the region where the outer extension portion extends. It is characterized by being lower than that.

  In the light emitting device according to the embodiment, the height of the upper surface of the package substrate in which the outer extension portion of the wavelength conversion layer extends is lower than the height of the upper surface of the outer region. Therefore, when the wavelength conversion layer used for mounting the LED chip is made of a phosphor sheet in which a phosphor is dispersed and held in advance in a resin, for example, the phosphor sheet can be easily aligned with the LED chip. , Productivity can be improved.

The LED chip of this invention is
An LED chip mounted on a package substrate,
When the LED chip is disposed on the package substrate, the upper surface and the side surface of the LED chip are covered with a wavelength conversion layer that converts the wavelength of light emitted from the light emitting layer of the LED chip, and the wavelength conversion layer Has an outer extending portion that extends outward from a region where the LED chip is disposed on the package substrate,
The LED chip is
A laminated substrate including the light emitting layer;
A reflective surface forming body that forms the reflective surface along one main surface of the two main surfaces of the laminated substrate,
With respect to the direction perpendicular to the main surface of the multilayer substrate, the distance from the outermost surface of the reflecting surface forming body to the reflecting surface is a predetermined dimension or more according to the thickness of the outer extending portion of the wavelength conversion layer. It is characterized by being set to.

  In the mounted state, the LED chip of the present invention is mounted on the package substrate in a state where the outermost surface of the reflective surface forming body is die-bonded, and the LED chip emits light so as to cover the upper surface and the side surface of the LED chip. A wavelength conversion layer that converts the wavelength of the light emitted from the layer is provided. The wavelength conversion layer is provided with an outer extending portion that extends outward from the region where the LED chip is disposed on the package substrate as a margin. Here, with respect to the direction perpendicular to the main surface of the multilayer substrate, the distance from the outermost surface of the reflective surface forming body to the reflective surface is predetermined according to the thickness of the outer extending portion of the wavelength conversion layer. It is set to more than the dimension. Therefore, if the distance from the outermost surface of the reflecting surface forming body to the reflecting surface is set to a dimension larger than the thickness of the outer extending portion of the wavelength conversion layer, for example, in the mounted state, On the package substrate, the height of the reflection surface exceeds the height of the outer extending portion of the wavelength conversion layer. Therefore, it is possible to effectively prevent the light emitted from the side surface of the mounted LED chip from being laterally blocked by the outer extending portion of the wavelength conversion layer. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

In the LED chip of one embodiment,
A structure is provided on the outermost surface of the reflecting surface forming body,
The distance from the outermost surface of the structure to the reflecting surface in place of the outermost surface of the reflecting surface forming body in the direction perpendicular to the main surface of the multilayer substrate is the outer extended portion of the wavelength conversion layer. It is characterized by being set to a predetermined dimension or more according to the thickness.

  In the LED chip of this embodiment, if the distance from the outermost surface of the structure to the reflecting surface is set to a dimension larger than the thickness of the outer extending portion of the wavelength conversion layer, for example, the mounting is performed. In the state, the height of the reflection surface on the package substrate exceeds the height of the outer extending portion of the wavelength conversion layer. Therefore, it is possible to effectively prevent the light emitted from the side surface of the mounted LED chip from being laterally blocked by the outer extending portion of the wavelength conversion layer. As a result, the light extraction efficiency can be improved and color unevenness can be reduced. In addition, since the LED chip is mounted on the package substrate via the structure, the reflective surface forming body is made different from the material of the structure by forming the reflective surface forming material. Increased freedom of body thickness setting.

In the LED chip of one embodiment,
The dimensions are set so that the height of the reflective surface from the package substrate is 10 μm or more when the LED chip is disposed with the outermost surface of the reflective surface forming body or the structure facing the package substrate. It is characterized by being.

  Since the particle diameter of the phosphor that is often used for mounting the LED chip is several μm, the height of the reflecting surface from the package substrate is preferably 10 μm or more.

  Further, when the wavelength conversion layer used for mounting the LED chip is made of a phosphor sheet in which the phosphor is dispersed and held in advance in the resin, the thickness of the phosphor sheet that is often used at present is approximately 25 μm to Since the thickness is 30 μm, the height of the reflecting surface from the package substrate is preferably 30 μm or more.

  Further, when the wavelength conversion layer used for mounting the LED chip is formed by applying a phosphor kneaded resin and then precipitating the phosphor, the thickness of the wavelength conversion layer is approximately 100 μm to 150 μm. There is a low concentration of the phosphor in the upper part of the outer extending portion of the wavelength conversion layer. In that case, the height of the reflecting surface from the package substrate is preferably 50 μm or more. Thereby, the light quantity blocked | interrupted by the outer side extension part of a wavelength conversion layer is fully reduced.

In the LED chip of one embodiment,
The reflective surface forming body is made of one or more of a metal material, a white material, and an opaque material having substantially the same color as the light emission color of the light emitting layer.

  In the LED chip of this embodiment, the reflecting surface can be preferably configured. That is, when the reflective surface forming body is made of one or two or more of a metal material, a white material, and an opaque material having substantially the same color as the luminescent color of the light emitting layer, The light reaching from the light emitting layer can be reliably reflected regardless of the difference in refractive index and the incident angle.

  For example, when the reflective surface forming body is made of two materials, a metal material and a white insulating material, the degree of freedom in designing the LED chip is increased. For example, the metal material of the electrode formed on the surface of the laminated substrate can be used as a part of the reflecting surface forming body.

In the LED chip of one embodiment,
The reflective surface forming body includes a first reflective surface forming body made of a transparent material having a refractive index lower than a refractive index of a portion along the reflective surface forming body of the laminated substrate, and a first made of a metal material. 2 reflective surface forming bodies,
An interface between the first reflecting surface forming body and the second reflecting surface forming body forms the reflecting surface.

  In the LED chip of this embodiment, the light that has reached the reflecting surface forming body from the light emitting layer is substantially transmitted through the first reflecting surface forming body, and the first reflecting surface forming body and the second reflecting surface are formed. Reflected by the reflecting surface between the surface forming body. In this LED chip, since the reflective surface forming body is composed of two layers of the first reflective surface forming body and the second reflective surface forming body, the degree of freedom in selecting the material forming the reflective surface forming body is increased. .

In the LED chip of one embodiment,
The reflective surface forming body constitutes an electrode.

  In the LED chip of this embodiment, since the reflective surface forming body is used as an electrode, it is not necessary to provide an electrode formed on the surface of the laminated substrate, and the configuration of the LED chip can be simplified.

The LED wafer of the present invention is
An LED wafer that becomes an LED chip by dividing,
When the LED chip is disposed on the package substrate, the upper surface and the side surface of the LED chip are covered with a wavelength conversion layer that converts the wavelength of light emitted from the light emitting layer of the LED chip, and the wavelength conversion layer is And having an outer extending portion that extends outward from a region where the LED chip is disposed on the package substrate,
The LED wafer is
A laminated substrate including the light emitting layer;
A reflective surface forming body that forms the reflective surface along one main surface of the two main surfaces of the laminated substrate,
With respect to the direction perpendicular to the main surface of the multilayer substrate, the distance from the outermost surface of the reflecting surface forming body to the reflecting surface is a predetermined dimension or more according to the thickness of the outer extending portion of the wavelength conversion layer. It is characterized by being set to.

  The LED wafer of the present invention becomes an LED chip by cutting or cleaving and dividing in a direction perpendicular to the main surface so as to have a predetermined dimension in a plane along the main surface of the multilayer substrate. . In the mounted state, such an LED chip is disposed on the package substrate in a state where the outermost surface of the reflecting surface forming body is die-bonded, and the LED chip emits light so as to cover the upper surface and the side surface of the LED chip. A wavelength conversion layer that converts the wavelength of the light emitted from the layer is provided. The wavelength conversion layer is provided with an outer extending portion that extends outward from the region where the LED chip is disposed on the package substrate as a margin. Here, with respect to the direction perpendicular to the main surface of the multilayer substrate, the distance from the outermost surface of the reflective surface forming body to the reflective surface is predetermined according to the thickness of the outer extending portion of the wavelength conversion layer. It is set to more than the dimension. Therefore, if the distance from the outermost surface of the reflecting surface forming body to the reflecting surface is set to a dimension larger than the thickness of the outer extending portion of the wavelength conversion layer, for example, in the mounted state, the package On the substrate, the height of the reflection surface exceeds the height of the outer extending portion of the wavelength conversion layer. Therefore, it is possible to effectively prevent the light emitted from the side surface of the mounted LED chip from being laterally blocked by the outer extending portion of the wavelength conversion layer. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Further, the formation of the reflecting surface forming body and the setting of the thickness can be collectively performed in a wafer state as a wafer process. Therefore, it is not necessary to add a new process to each package substrate or each LED chip. Moreover, the processing in the wafer state is performed with higher precision than when processing individual package substrates or individual LED chips. Therefore, in the mounted state, the accuracy of the height of the reflecting surface on the package substrate and the accuracy of the parallelism of the reflecting surface with respect to the package substrate are increased.

  Further, since the outer extension portion is provided as a margin in the wavelength conversion layer, for example, when using a phosphor sheet in which a phosphor is dispersed and held in advance as a wavelength conversion layer, The margin required for the cut dimensions and the accuracy required for alignment of the phosphor sheet with respect to the LED chip can be improved, and the productivity can be improved.

In an LED wafer of one embodiment,
A structure is provided on the outermost surface of the reflecting surface forming body,
The distance from the outermost surface of the structure to the reflecting surface in place of the outermost surface of the reflecting surface forming body in the direction perpendicular to the main surface of the multilayer substrate is the outer extended portion of the wavelength conversion layer. It is characterized by being set to a predetermined dimension or more according to the thickness.

  In the LED wafer of this embodiment, if the distance from the outermost surface of the structure to the reflecting surface is set to a dimension larger than the thickness of the outer extending portion of the wavelength conversion layer, for example, the mounting is performed. In the state, the height of the reflection surface on the package substrate exceeds the height of the outer extending portion of the wavelength conversion layer. Therefore, it is possible to effectively prevent the light emitted from the side surface of the mounted LED chip from being laterally blocked by the outer extending portion of the wavelength conversion layer. As a result, the light extraction efficiency can be improved and color unevenness can be reduced. In addition, since the LED chip is mounted on the package substrate via the structure, the reflective surface forming body is made different from the material of the structure by forming the reflective surface forming material. Increased freedom of body thickness setting.

In an LED wafer of one embodiment,
The dimensions are set so that the height of the reflective surface from the package substrate is 10 μm or more when the LED chip is disposed with the outermost surface of the reflective surface forming body or the structure facing the package substrate. It is characterized by being.

  Since the particle diameter of the phosphor that is often used for mounting the LED chip is several μm, the height of the reflecting surface from the package substrate is preferably 10 μm or more.

  Further, when the wavelength conversion layer used for mounting the LED chip is made of a phosphor sheet in which the phosphor is dispersed and held in advance in the resin, the thickness of the phosphor sheet that is often used at present is approximately 25 μm to Since the thickness is 30 μm, the height of the reflecting surface from the package substrate is preferably 30 μm or more.

  Further, when the wavelength conversion layer used for mounting the LED chip is formed by applying a phosphor kneaded resin and then precipitating the phosphor, the thickness of the wavelength conversion layer is approximately 100 μm to 150 μm. There is a low concentration of the phosphor in the upper part of the outer extending portion of the wavelength conversion layer. In that case, the height of the reflecting surface from the package substrate is preferably 50 μm or more. Thereby, the light quantity blocked | interrupted by the outer side extension part of a wavelength conversion layer is fully reduced.

In an LED wafer of one embodiment,
The reflective surface forming body is made of one or more of a metal material, a white material, and an opaque material having substantially the same color as the light emission color of the light emitting layer.

  In the LED wafer of this embodiment, the reflecting surface can be preferably configured. That is, when the reflective surface forming body is made of one or two or more of a metal material, a white material, and an opaque material having substantially the same color as the luminescent color of the light emitting layer, The light reaching from the light emitting layer can be reliably reflected regardless of the difference in refractive index and the incident angle.

  For example, when the reflective surface forming body is made of two materials, a metal material and a white insulating material, the degree of freedom in designing an LED chip obtained by dividing the LED wafer is increased. For example, the metal material of the electrode formed on the surface of the laminated substrate can be used as a part of the reflecting surface forming body.

In an LED wafer of one embodiment,
The reflective surface forming body includes a first reflective surface forming body made of a transparent material having a refractive index lower than a refractive index of a portion along the reflective surface forming body of the laminated substrate, and a first made of a metal material. 2 reflective surface forming bodies,
An interface between the first reflecting surface forming body and the second reflecting surface forming body forms the reflecting surface.

  In the LED wafer according to this embodiment, the light that has reached the reflecting surface forming body from the light emitting layer is substantially transmitted through the first reflecting surface forming body, and the first reflecting surface forming body and the second reflecting surface. Reflected by the reflecting surface between the surface forming body. In this LED wafer, since the reflective surface forming body is composed of two layers of the first reflective surface forming body and the second reflective surface forming body, the degree of freedom in selecting the material for forming the reflective surface formed body is increased. .

In an LED wafer of one embodiment,
The reflective surface forming body constitutes an electrode.

  In the LED wafer of this embodiment, since the reflective surface forming body is used as an electrode, it is not necessary to provide an electrode formed on the surface of the laminated substrate, and the configuration of the LED wafer can be simplified.

The package substrate of the present invention is
A package substrate on which an LED chip is to be mounted,
LED chip placement area where the LED chip should be placed;
A frame-like region surrounding the outside of the LED chip arrangement region;
A reflective surface forming body arranged along the LED chip arrangement area on the LED chip arrangement area;
When the LED chip is disposed on the reflective surface forming body, the upper surface and the side surface of the LED chip are covered with a wavelength conversion layer that converts the wavelength of light emitted from the light emitting layer of the LED chip, and the wavelength The conversion layer has an outer extending portion extending on the frame-shaped region,
The reflective surface forming body is configured to form a reflective surface that reflects light emitted from the light emitting layer of the LED chip to the LED chip arrangement region side,
With respect to the direction perpendicular to the reflecting surface, the distance from the upper surface of the frame-like region to the reflecting surface is set to a predetermined dimension or more according to the thickness of the outer extending portion of the wavelength conversion layer. It is characterized by.

  The wavelength conversion for converting the wavelength of the light emitted from the light emitting layer of the LED chip so that the LED chip is mounted on the package substrate of the present invention in a die-bonded state and covers the upper surface and the side surface of the LED chip. A layer is provided. The wavelength conversion layer is provided with an outer extension portion extending as a margin on the frame region of the package substrate. A reflective surface is arranged along the LED chip arrangement area on the LED chip arrangement area of the package substrate. The reflecting surface reflects light emitted from the light emitting layer to the package arrangement region side. In addition, this reflecting surface is formed by the reflecting surface forming body. Here, with respect to the direction perpendicular to the reflecting surface, the distance from the upper surface of the frame-shaped region to the reflecting surface is set to a predetermined dimension or more according to the thickness of the outer extending portion of the wavelength conversion layer. ing. Therefore, if the distance from the upper surface of the frame-shaped region to the reflection surface is set to a dimension larger than the thickness of the outer extension portion of the wavelength conversion layer, for example, the reflection surface on the package substrate is set. The height exceeds the height of the outer extending portion of the wavelength conversion layer. Therefore, it is possible to effectively prevent the light emitted from the side surface of the mounted LED chip from being laterally blocked by the outer extending portion of the wavelength conversion layer. As a result, the light extraction efficiency can be improved and color unevenness can be reduced. Moreover, since the reflection surface is formed on the upper surface of the package substrate, it is not necessary to provide a reflection surface on the LED chip.

In the package substrate of one embodiment,
The height of the reflective surface is higher than the height of the upper surface of the outer region corresponding to the outer side of the frame-like region.

  In the package substrate of this embodiment, the height of the reflection surface exceeds the height of the upper surface of the outer region. Therefore, the light emitted from the side surface of the LED chip to the side can be prevented from being blocked by the outer region. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

In the package substrate of one embodiment,
The height of the upper surface of the frame-like region is lower than the height of the upper surface of the outer region corresponding to the outside of the frame-like region.

  In the package substrate of this embodiment, the height of the upper surface of the frame-like region is lower than the height of the upper surface of the outer region. Therefore, when the wavelength conversion layer used for mounting the LED chip is made of a phosphor sheet in which a phosphor is dispersed and held in advance in a resin, for example, the phosphor sheet can be easily aligned with the LED chip. , Productivity can be improved.

  As apparent from the above, according to the light emitting device of the present invention, it is possible to prevent the light emitted from the side surface of the LED chip mounted on the package substrate from being blocked, and to improve the light extraction efficiency. At the same time, color unevenness can be reduced.

  Further, according to the LED chip of the present invention, in the mounted state, it is possible to prevent the light emitted from the side surfaces from being blocked, thereby improving the light extraction efficiency and reducing the color unevenness.

  Further, according to the LED wafer of the present invention, it is possible to improve the light extraction efficiency from the mounted LED chip and reduce the color unevenness.

  Further, according to the package substrate of the present invention, it is possible to prevent the light emitted from the side surface of the mounted LED chip from being blocked, thereby improving the light extraction efficiency and reducing the color unevenness.

It is a figure which shows the cross-section of the LED wafer of one Embodiment of this invention. It is a figure which shows the cross-section of the LED wafer of one Embodiment of this invention. It is a figure which shows the cross-section of the LED wafer of one Embodiment of this invention. It is a figure which shows the cross-section of the LED wafer of one Embodiment of this invention. It is a figure which shows the cross-section of the LED wafer of one Embodiment of this invention. It is a figure which shows the cross-section of the LED wafer of one Embodiment of this invention. It is a figure which shows the light-emitting device which mounted the LED chip obtained from the LED wafer of FIG. 1 on the package board | substrate by the face-up system. It is a figure which shows the light-emitting device which mounted the LED chip obtained from the LED wafer of FIG. 2 on the package board | substrate by the face-down system. It is a figure which shows the light-emitting device which mounted the LED chip obtained from the LED wafer of FIG. 3 on the package board | substrate by the face-up system. It is a figure which shows the light-emitting device which mounted the LED chip obtained from the LED wafer of FIG. 4 on the package board | substrate by the face-up system. It is a figure which shows the light-emitting device which mounted the LED chip obtained from the LED wafer of FIG. 5 on the package board | substrate by the face-down system. It is a figure which shows the light-emitting device which mounted the LED chip obtained from the LED wafer of FIG. 6 on the package board | substrate by the face-up system. It is a figure which shows the light-emitting device of the LED chip of one Embodiment of this invention. It is a figure which shows the light-emitting device of the LED chip of one Embodiment of this invention. It is a figure which shows the light-emitting device of the LED chip of one Embodiment of this invention. It is a figure which shows the light-emitting device of the conventional LED chip. FIGS. 17A and 17B are diagrams for explaining the problem of the LED chip light-emitting device when a conventional phosphor sheet is used. It is a figure explaining the problem of the light-emitting device of the LED chip in the case of using the conventional fluorescent substance sheet. It is a figure explaining the problem of the light-emitting device of the LED chip in the case of using the conventional fluorescent substance sheet. It is a figure explaining the problem of the light-emitting device of the LED chip in the case of using the conventional fluorescent substance sheet.

  Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments.

(First embodiment)
FIG. 1 shows a cross-sectional structure of a blue LED wafer 81 as one embodiment.

  The blue LED wafer 81 includes a growth substrate 1 made of sapphire having translucency, a light emitting layer 2 that is formed on the first main surface 1a of the growth substrate 1 and emits light when energized, and the light emitting layer. 2 and an N electrode 41 and a P electrode 42 formed on the surface. These electrodes 41 and 42 are repeatedly arranged at a constant pitch along the surface of the light emitting layer 2. These elements 1, 2, 41, and 42 constitute a laminated substrate.

  The blue LED wafer 81 includes a reflective surface forming body 5 along a second main surface 1b opposite to the first main surface 1a of the growth substrate 1. The reflective surface forming body 5 is made of, for example, a metal material such as aluminum or silver, and specularly reflects light reaching the interface between the growth substrate 1 and the reflective surface forming body 5 from the light emitting layer 2 through the growth substrate 1. Thus, the flat reflective surface 3 is formed. The reflectance of the reflective surface 3 is preferably higher and is desirably 90% or more. With respect to the direction perpendicular to the main surfaces 1a and 1b, the distance from the outermost surface 5b of the reflecting surface forming body 5 to the reflecting surface 3, that is, the thickness D1 of the reflecting surface forming body 5 is the outer extension of the wavelength conversion layer 7 described later. It is set to a predetermined dimension or more according to the thickness H of the existing portion 7a.

  The blue LED wafer 81 is divided by cutting or cleaving in a direction perpendicular to the main surfaces 1a and 1b so as to have a predetermined dimension in a plane along the first main surface 1a of the growth substrate 1. In this example, the blue LED wafer 81 is diced along a broken line X shown in FIG. Thereby, the blue LED chip 81 ′ shown in FIG. 7 is obtained.

  FIG. 7 shows a light emitting device in which a blue LED chip 81 ′ is mounted on the package substrate 8 in a face-up manner. This implementation is done as follows. First, the blue LED chip 81 ′ is arranged at a predetermined position on the package substrate 8 so that the outermost surface 5 b of the reflective surface forming body 5 is in contact with the package substrate 8, and fixed with a die bond agent (not shown). Wire wires 91 and 92 are provided between the electrodes 10a and 10b on the package substrate 8 and the electrodes 41 and 42 on the blue LED chip 81 '. Next, a phosphor sheet in which a phosphor is dispersed and held in advance in a resin is provided as the wavelength conversion layer 7 so as to cover the upper surface 81a and the side surface 81b of the blue LED chip 81 ′. Alternatively, after the phosphor kneaded resin is applied as the wavelength conversion layer 7, the phosphor is precipitated. Finally, the blue LED chip 81 ′ and the wavelength conversion layer 7 are sealed with a transparent resin (not shown). In the wavelength conversion layer 7, an area in which the blue LED chip 81 ′ is arranged on the package substrate 8 (referred to as “LED chip arrangement area”) so as to securely cover the blue LED chip 81 ′. A portion extending outward (referred to as an “outside extending portion”) 7a is provided as a margin.

  In operation, a part of the blue light emitted from the upper surface 81a and the side surface 81b of the blue LED chip 81 ′ excites the phosphor contained in the wavelength conversion layer 7 to generate yellow light as fluorescence in this example. As a result, white light is generated by the color mixture of the portion of the blue light emitted from the blue LED chip 81 ′ that has not been converted and the yellow light generated by the wavelength conversion layer 7. This white light is emitted upward and laterally.

  In operation, light emitted from the light emitting layer 2 of the blue LED chip 81 ′ through the growth substrate 1 toward the package substrate 8 is reflected by the reflective surface 3 and absorbed by the die bond agent or the package substrate 8. There is nothing to do.

  In this example of the light emitting device, the height of the reflecting surface 3 on the package substrate 8 is substantially equal to the thickness D1 of the reflecting surface forming body 5. Here, as described above, the thickness D1 of the reflecting surface forming body 5 is set in advance in a wafer state to a predetermined dimension or more according to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. . Therefore, it is possible to effectively prevent the light emitted from the side surface 81b of the mounted blue LED chip 81 ′ from being laterally blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Specifically, since the particle diameter of the phosphor that is currently used for mounting the blue LED chip is several μm, the height of the reflecting surface 3 from the package substrate 8 (the thickness of the reflecting surface forming body 5). ) D1 is set to at least 10 μm or more.

  Further, when the wavelength conversion layer 7 is made of a phosphor sheet in which the phosphor is dispersed and held in advance in the resin, the thickness H of the phosphor sheet that is often used at present is approximately 25 μm to 30 μm. The thickness D1 of the reflecting surface forming body 5 is desirably 30 μm or more.

  In addition, the thickness D1 of the reflective surface forming body 5 does not necessarily have to be equal to or greater than the thickness H of the phosphor sheet. If the amount of light blocked by the outer extending portion 7a of the wavelength conversion layer 7 can be reduced, the height of the reflecting surface 3 may be somewhat lower than the thickness H of the phosphor sheet. For example, when the thickness H of the phosphor sheet is 50 μm and the phosphor concentration is 20% by volume, the height of the reflecting surface 3 is set to a position 20 μm lower than the thickness H of the outer extending portion 7 a of the wavelength conversion layer 7. However, as a practical matter, the amount of light blocked by the outer extending portion 7a of the wavelength conversion layer 7 is sufficiently reduced. Therefore, in that case, the thickness D1 of the reflecting surface forming body 5 may be 30 μm or more.

  Further, when the wavelength conversion layer 7 is made of a phosphor sheet in which a phosphor is dispersed and held in advance in the resin, the wavelength conversion layer 7 is provided with an outer extending portion 7a as a margin. The margin required for the cut dimensions and the accuracy required for alignment of the phosphor sheet with respect to the LED chip can be improved, and the productivity can be improved.

  When the wavelength conversion layer 7 is formed by applying a phosphor kneaded resin and then precipitating the phosphor, the thickness H of the wavelength conversion layer 7 is approximately 100 μm to 150 μm, and the wavelength conversion layer 7 The upper portion of the outer extending portion 7a has a low phosphor concentration. In that case, even if the height of the reflective surface 3 is set at a position lower by about 50 μm than the height H of the upper surface of the outer extension portion 7 a of the wavelength conversion layer 7, the amount of light blocked by the outer extension portion 7 a of the wavelength conversion layer 7 is It is sufficiently reduced. As a result, the thickness D1 of the reflecting surface forming body 5 may be 50 μm or more.

  The formation of the reflecting surface forming body 5 and the setting of the thickness can be collectively performed in a wafer state as a wafer process. Therefore, it is not necessary to add a new process to each package substrate or each LED chip. Moreover, the processing in the wafer state is performed with higher precision than when processing individual package substrates or individual LED chips. Therefore, in the mounted state, the accuracy of the height of the reflecting surface 3 on the package substrate 8 and the accuracy of the parallelism of the reflecting surface 3 with respect to the package substrate 8 are increased.

  The reflective surface 3 is preferably configured not only when the reflective surface forming body 5 is made of a metal material but also when it is made of a white material and an opaque material having substantially the same color as the light emission color of the light emitting layer. Can do. That is, when the reflecting surface forming body 5 is made of a metal material, a white material, or an opaque material having substantially the same color as the light emitting color of the light emitting layer, the reflecting surface 3 passes through the growth substrate 1 from the light emitting layer 2. The reached light can be reliably reflected regardless of the refractive index difference or the incident angle.

  For example, when the reflective surface forming body 5 is made of a metal material, aluminum, silver, or the like may be used. When the reflective surface forming body 5 is made of a metal material, when a short circuit between the reflective surface forming body 5 made of a metal material and the package substrate 8 becomes a problem, the blue LED chip 81 with respect to the package substrate 8 is used. It is desirable to prevent short-circuiting by using an insulating die-bonding agent for fixing 'and coating the outermost surface 5b of the reflecting surface forming body 5 with an insulating material.

  Further, when the reflective surface forming body 5 is made of a white material, a white solder resist or a white molding agent may be used.

  When the emission color of the light emitting layer 2 is blue as in the present embodiment, a blue solder resist or a blue mold is formed by using the reflecting surface forming body 5 as an opaque material having substantially the same color as the emission color of the light emitting layer 2. An agent or the like may be used.

  Further, since the blue LED chip 81 ′ is arranged and fixed on the package substrate 8 so that the outermost surface 5 b of the reflecting surface forming body 5 is in contact with the package substrate 8, it is only necessary to mount the blue LED chip 81 ′. The reflective surface 3 can be formed with high accuracy and the productivity can be improved.

(Second Embodiment)
FIG. 2 shows a cross-sectional structure of a blue LED wafer 82 as one embodiment. In FIG. 2, the same elements as those in FIG. 1 are denoted by the same reference numerals, and redundant description will be omitted (the same applies to FIGS. 3 to 6 described later).

  In the blue LED wafer 82, columnar bump electrodes 61 and 62 as structures are provided on the N electrode 41 and the P electrode 42, respectively. This is because the blue LED chip obtained from the blue LED wafer 82 is scheduled to be mounted in a face-down manner. The outermost surfaces 61a and 62a of the bump electrodes 61 and 62 are at the same height level.

  In this example, a white solder resist 12 is embedded in the gap between the N electrode 41 and the P electrode 42 to prevent a short circuit between the electrodes 41 and 42.

  In this example, the electrodes 41 and 42 and the white solder resist 12 are integrated to form the reflective surface forming body 13. That is, the metal material constituting the electrodes 41 and 42 is used as a part of the reflecting surface forming body 13. An interface between the light emitting layer 2 and the reflecting surface forming body 13 is a reflecting surface 3 that reflects light from the light emitting layer 2.

  In this blue LED wafer 82, the distance D2 from the outermost surfaces 61a, 62a of the bump electrodes 61, 62 to the reflecting surface 3 in the direction perpendicular to the main surfaces 1a, 1b of the growth substrate 1 is a wavelength conversion layer 7 described later. Is set to a predetermined dimension or more according to the thickness H of the outer extending portion 7a.

  The blue LED wafer 82 is diced along a broken line X shown in FIG. Thereby, the blue LED chip 82 'shown in FIG. 8 is obtained.

  FIG. 8 shows a light emitting device in which a blue LED chip 82 ′ is mounted on the package substrate 8 in a face-down manner. This implementation is done as follows. First, the blue LED chip 82 'is bonded and fixed at a predetermined position on the package substrate 8 with the electrodes 10a and 10b on the package substrate 8 and the electrodes 41 and 42 of the blue LED chip 82' corresponding to each other. To do. Next, a fluorescent material in which a phosphor is dispersed and held in advance as a wavelength conversion layer 7 so as to cover the upper surface 82a (second main surface 1b of the growth substrate 1) and the side surface 82b of the blue LED chip 82 '. A body sheet is provided. Alternatively, after the phosphor kneaded resin is applied as the wavelength conversion layer 7, the phosphor is precipitated. Finally, the blue LED chip 82 'and the wavelength conversion layer 7 are sealed with a transparent resin (not shown). The wavelength conversion layer 7 is provided with an outer extending portion 7a as a margin so as to reliably cover the blue LED chip 82 '.

  In operation, part of the blue light emitted from the upper surface 82a and the side surface 82b of the blue LED chip 82 'excites the phosphor contained in the wavelength conversion layer 7, and in this example, yellow light is generated as fluorescence. As a result, white light is generated by the color mixture of the portion of the blue light emitted from the blue LED chip 82 ′ that has not been converted and the yellow light generated by the wavelength conversion layer 7. This white light is emitted upward and laterally.

  Further, during operation, light emitted from the light emitting layer 2 of the blue LED chip 82 ′ toward the package substrate 8 is reflected by the reflective surface 3 and is not absorbed by the package substrate 8.

  In this example of the light emitting device, the height of the reflective surface 3 on the package substrate 8 is substantially equal to the distance D2 from the outermost surfaces 61a, 62a of the bump electrodes 61, 62 to the reflective surface 3. Here, as described above, the distance D2 from the outermost surfaces 61a, 62a of the bump electrodes 61, 62 to the reflecting surface 3 in advance in the wafer state is the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. It is set to a predetermined size or more. Therefore, it is possible to effectively prevent the light emitted from the side surface 82b of the mounted blue LED chip 82 'from being laterally blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Further, as in this example, when the reflection surface forming body 13 is composed of two materials, a metal material and a white insulating material, the metal material constituting the electrodes 41 and 42 is used as a part of the reflection surface forming body 13. This increases the degree of freedom in designing the blue LED chip 82 '.

(Third embodiment)
FIG. 3 shows a cross-sectional structure of a blue LED wafer 83 as one embodiment.

  In this blue LED wafer 83, the outermost surface 5b of the reflecting surface forming body 5 is provided with a spacer layer 6 made of a material different from the material of the reflecting surface forming body 5 as a structure as shown in FIG. Different from the blue LED wafer 81. In this blue LED wafer 83, as in the blue LED wafer 81 shown in FIG. 1, the interface between the growth substrate 1 and the reflecting surface forming body 5 reflects the light from the light emitting layer 2. 3

  In this blue LED wafer 83, the distance from the outermost surface 6b of the spacer layer 6 to the reflecting surface 3 in place of the outermost surface 5b of the reflecting surface forming body 5 in the direction perpendicular to the main surfaces 1a and 1b of the growth substrate 1. D3 is set to be equal to or larger than a predetermined dimension according to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7 described later.

  The blue LED wafer 83 is diced along a broken line X shown in FIG. Thereby, the blue LED chip 83 ′ shown in FIG. 9 is obtained.

  FIG. 9 shows a light emitting device in which a blue LED chip 81 ′ is mounted on the package substrate 8 in a face-up manner. This mounting is performed in the same procedure as described with reference to FIG. 7 (details are omitted).

  In this example of the light emitting device, the height of the reflective surface 3 on the package substrate 8 is substantially equal to the distance D3 from the outermost surface 6b of the spacer layer 6 to the reflective surface 3. Here, as described above, the distance D3 from the outermost surface 6b of the spacer layer 6 to the reflecting surface 3 in advance in the wafer state corresponds to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7 described later. It is set to a predetermined dimension or more. Therefore, it is possible to effectively prevent the light emitted from the side surface 83b of the mounted blue LED chip 83 'from being sideways blocked by the outer extending portion 7a of the wavelength conversion layer 7. Thereby, the light extraction efficiency can be improved and color unevenness can be reduced.

  In addition, since the spacer layer 6 as a structure is provided on the outermost surface 5b of the reflecting surface forming body 5, the degree of freedom in setting the thickness of the reflecting surface forming body 5 is increased.

(Fourth embodiment)
FIG. 4 shows a cross-sectional structure of a blue LED wafer 84 as one embodiment.

  The blue LED wafer 84 is different from the blue LED wafer 81 shown in FIG. 1 in that the reflecting surface forming body 14 provided on the second main surface 1b of the growth substrate 1 has a two-layer structure. Yes.

  In this example, the reflecting surface forming body 14 is formed on the first reflecting surface forming body 15 provided along the second main surface 1 b of the growth substrate 1 and the outermost surface 15 b of the first reflecting surface forming body 15. The second reflecting surface forming body 16 is provided along the second reflecting surface forming body 16.

The first reflecting surface forming body 15 is made of SiO ₂ having a refractive index (refractive index 1.47) smaller than the refractive index 1.77 of the growth substrate 1 made of sapphire. The second reflecting surface forming body 16 is made of a metal material (in this example, aluminum or silver).

  In the blue LED wafer 84, the interface between the growth substrate 1 and the first reflecting surface forming body 15 cannot reflect light from the light emitting layer 2 so much. The interface between the first reflecting surface forming body 15 and the second reflecting surface forming body 16 is the reflecting surface 3 that substantially reflects the light from the light emitting layer 2.

  In the blue LED wafer 84, the distance from the outermost surface 16b of the second reflecting surface forming body 16 to the reflecting surface 3 in the direction perpendicular to the main surfaces 1a and 1b of the growth substrate 1, that is, the formation of the second reflecting surface. The thickness D4 of the body 16 is set to be equal to or greater than a predetermined dimension according to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7 described later.

  The blue LED wafer 84 is diced along a broken line X shown in FIG. Thereby, the blue LED chip 84 'shown in FIG. 10 is obtained.

  FIG. 10 shows a light emitting device in which a blue LED chip 84 ′ is mounted on the package substrate 8 in a face-up manner. This mounting is performed in the same procedure as described with reference to FIG. 7 (details are omitted).

  In the example of the light emitting device, the height of the reflective surface 3 on the package substrate 8 is substantially equal to the thickness D4 of the second reflective surface forming body 16. Here, as described above, the thickness D4 of the second reflecting surface forming body 16 is set in advance in a wafer state to be equal to or larger than a predetermined dimension corresponding to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. Has been. Therefore, it is possible to effectively prevent the light emitted from the side surface 84b of the mounted blue LED chip 84 'from being laterally blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  In this example, the reflective surface forming body 14 is composed of two layers of the first reflective surface forming body 15 and the second reflective surface forming body 16, so that the material for forming the reflective surface forming body 14 can be freely selected. The degree increases.

(Fifth embodiment)
FIG. 5 shows a cross-sectional structure of a blue LED wafer 85 as an embodiment.

  In this blue LED wafer 85, in this example, the white solder resist 12 is embedded in the gap between the N electrode 41 and the P electrode 42 to prevent a short circuit between the electrodes 41, 42. 1 differs from the blue LED wafer 81 shown in FIG. 1 in that the reflecting surface forming body 13 is formed integrally with the solder resist 12. A metal material constituting the electrodes 41 and 42 is used as a part of the reflecting surface forming body 13. An interface between the light emitting layer 2 and the reflecting surface forming body 13 is a reflecting surface 3 that reflects light from the light emitting layer 2.

  In this blue LED wafer 85, the thickness D5 of the reflecting surface forming body 13 is set to a predetermined dimension or more according to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7 described later.

  The blue LED wafer 85 is diced along a broken line X shown in FIG. Thereby, the blue LED chip 85 ′ shown in FIG. 11 is obtained.

  FIG. 11 shows a light emitting device in which a blue LED chip 85 ′ is mounted on the package substrate 8 in a face-down manner. This implementation is done as follows. First, the blue LED chip 85 ′ is bonded and fixed to a predetermined position on the package substrate 8 in a state where the electrodes 10 a and 10 b and the electrodes 41 and 42 of the blue LED chip 85 ′ correspond to each other. Next, a fluorescent material in which a phosphor is dispersed and held in advance as a wavelength conversion layer 7 so as to cover the upper surface 85a (second main surface 1b of the growth substrate 1) and the side surface 85b of the blue LED chip 85 ′. A body sheet is provided. Alternatively, after the phosphor kneaded resin is applied as the wavelength conversion layer 7, the phosphor is precipitated. Finally, the blue LED chip 85 ′ and the wavelength conversion layer 7 are sealed with a transparent resin (not shown). The wavelength conversion layer 7 is provided with an outer extending portion 7a as a margin so as to reliably cover the blue LED chip 85 '.

  During operation, part of the blue light emitted from the upper surface 85a and the side surface 85b of the blue LED chip 85 'excites the phosphor contained in the wavelength conversion layer 7 to generate yellow light as fluorescence in this example. As a result, white light is generated by the color mixture of the portion of the blue light emitted from the blue LED chip 85 ′ that has not been converted and the yellow light generated by the wavelength conversion layer 7. This white light is emitted upward and laterally.

  Further, during operation, light emitted from the light emitting layer 2 of the blue LED chip 85 ′ toward the package substrate 8 is reflected by the reflective surface 3 and is not absorbed by the package substrate 8.

  In this example of the light emitting device, the height of the reflecting surface 3 on the package substrate 8 is substantially equal to the thickness D5 of the reflecting surface forming body 13. Here, as described above, the thickness D5 of the reflecting surface forming body 13 is set in advance in a wafer state to a predetermined dimension or more according to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. . Therefore, it is possible to effectively prevent the light emitted from the side surface 85b of the mounted blue LED chip 85 ′ from being blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Further, as in this example, when the reflection surface forming body 13 is composed of two materials, a metal material and a white insulating material, the metal material constituting the electrodes 41 and 42 is used as a part of the reflection surface forming body 13. This increases the degree of freedom in designing the blue LED chip 85 '.

(Sixth embodiment)
FIG. 6 shows a cross-sectional structure of a blue LED wafer 86 as one embodiment.

  In the blue LED wafer 86, the reflective surface forming body 5 is provided between the first main surface 1 a of the growth substrate 1 and the light emitting layer 2. The reflecting surface forming body 5 is used as a P electrode 42, and a cylindrical bump electrode 62 is disposed on a part of the reflecting surface forming body 5 at an appropriate distance from the light emitting layer 2. An N electrode 41 is provided on the light emitting layer 2, and a cylindrical bump electrode 61 and an insulating layer 17 are provided on the N electrode 41. The interface between the light emitting layer 2 and the reflecting surface forming body 5 is a flat reflecting surface 3 that specularly reflects light from the light emitting layer 2. The bump electrode 62 is arranged at an appropriate distance from the N electrode 41 and the insulating layer 17.

  In this blue LED wafer 86, the distance D6 from the outermost surface 1b of the growth substrate 1 to the reflection surface 3 is replaced with the outermost surface 5b of the reflection surface forming body 5 in the direction perpendicular to the main surfaces 1a, 1b of the growth substrate 1. Is set to a predetermined dimension or more according to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7 described later.

  The blue LED wafer 86 is diced along a broken line X shown in FIG. Thereby, the blue LED chip 86 'shown in FIG. 12 is obtained.

  FIG. 12 shows a light emitting device in which a blue LED chip 86 'is mounted on the package substrate 8 in a face-up manner. This mounting is performed in the same procedure as described with reference to FIG. 7 (details are omitted).

  In this example of the light emitting device, the height of the reflection surface 3 on the package substrate 8 is substantially equal to the distance D6 from the outermost surface 1b of the growth substrate 1 to the reflection surface 3. Here, as described above, the distance D6 from the outermost surface 1b of the growth substrate 1 to the reflecting surface 3 in a wafer state is a predetermined dimension corresponding to the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. It is set above. Accordingly, it is possible to effectively prevent the light emitted from the side surface 86b of the mounted blue LED chip 86 'from being sideways blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

(Seventh embodiment)
FIG. 13 shows a light emitting device of a blue LED chip 87 as one embodiment.

  In this light emitting device, the reflective surface forming body 51 is provided in a state of protruding on the package substrate 8. Further, the reflection surface 3 is formed on the upper surface of the reflection surface forming body 51, and the blue LED chip 87 is provided on the upper surface of the reflection surface 3. That is, the point that the reflecting surface forming body 51 is provided separately from the LED chip instead of the reflecting surface forming body 5 is different from the light emitting device of the blue LED chip 81 'shown in FIG.

  The blue LED chip 87 includes a growth substrate 1 made of translucent sapphire, a light emitting layer 2 that is formed on the first main surface 1a of the growth substrate 1 and emits light when energized, and the light emitting layer. 2 and an N electrode 41 and a P electrode 42 formed on the surface.

  The reflective surface forming body 51 is made of, for example, a metal material such as aluminum or silver. From the light emitting layer 2 of the blue LED chip 87 to the interface between the growth substrate 1 of the blue LED chip 87 and the reflective surface forming body 51. A flat reflecting surface 3 is formed so that the light reaching through the growth substrate 1 is specularly reflected.

  This implementation is done as follows. First, the blue LED chip 87 is arranged on the reflecting surface forming body 51 fixed on the package substrate 8 and fixed with a die bond agent (not shown), and the electrodes 10a and 10b on the package substrate 8 and the blue LED chip 87 are fixed. Wire wirings 91 and 92 are provided between the upper electrodes 41 and 42. Next, a phosphor sheet in which the phosphor is dispersed and held in advance as a wavelength conversion layer 7 so as to cover the upper surface 87a and the side surface 87b of the blue LED chip 87 and the side surface 51b of the reflecting surface forming body 51. Is provided. Alternatively, after the phosphor kneaded resin is applied as the wavelength conversion layer 7, the phosphor is precipitated. Finally, the blue LED chip 87, the reflective surface forming body 51, and the wavelength conversion layer 7 are sealed with a transparent resin (not shown). In addition, in the wavelength conversion layer 7, a portion extending outward from the region where the blue LED chip 87 is disposed on the package substrate 8 so as to securely cover the blue LED chip 87 and the reflection surface forming body 51 ( This is called an “outside extending portion.” 7a is provided as a margin.

  During operation, part of the blue light emitted from the upper surface 87a and the side surface 87b of the blue LED chip 87 excites the phosphor contained in the wavelength conversion layer 7, and in this example, yellow light is generated as fluorescence. Thereby, white light is generated by the color mixture of the portion of the blue light emitted from the blue LED chip 87 that has not been converted and the yellow light generated by the wavelength conversion layer 7. This white light is emitted upward and laterally.

  In operation, light emitted from the light emitting layer 2 of the blue LED chip 87 toward the package substrate 8 through the growth substrate 1 is reflected by the reflective surface 3 and absorbed by the die bond agent or the package substrate 8. There is nothing.

  In this example of the light emitting device, the height of the reflection surface 3 on the package substrate 8 is substantially equal to the thickness D7 of the reflection surface forming body 51, and depends on the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. It is set to a predetermined dimension or more. Therefore, it is possible to effectively prevent the light emitted from the side surface 87b of the mounted blue LED chip 87 from being blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  In this example, since the reflective surface forming body 51 is separate from the blue LED chip 87, the degree of freedom in selecting a material for forming the reflective surface forming body 51 is increased.

(Eighth embodiment)
FIG. 14 shows a light emitting device of a blue LED chip 87 as one embodiment. In FIG. 14, the same elements as those in FIG. 13 are denoted by the same reference numerals, and redundant description is omitted.

  In this light emitting device, a convex portion 28 is formed on the package substrate 8. An LED chip arrangement area 28a on which the blue LED chip 87 is to be arranged is provided on the upper surface of the convex portion 28, and a frame-shaped area 38 is formed around the outside of the LED chip arrangement area 28a. A reflective surface forming body 52 is formed on the LED chip arrangement region 28 a, the reflective surface 3 is formed on the reflective surface forming body 52, and the blue LED chip 87 is fixed on the reflective surface 3. That is, the point which the convex part 28 and the reflective surface formation body 52 are provided instead of the reflective surface formation body 51 differs from the light-emitting device of the blue LED chip 87 shown in FIG.

  Specifically, the convex portion 28 of the package substrate 8 is formed by printing and curing a white resist ink, for example, at the interface between the growth substrate 1 of the blue LED chip 87 and the reflective surface forming body 52. The flat reflecting surface 3 is formed so that the light reaching the light emitting layer 2 of the blue LED chip 87 through the growth substrate 1 is specularly reflected.

  This implementation is done as follows. First, the reflective surface forming body 52 is formed on the LED chip placement region 28a of the package substrate 8, the blue LED chip 87 is placed on the reflective surface forming body 52, and fixed with a die bond agent (not shown). Wire wirings 91 and 92 are provided between the electrodes 10 a and 10 b on 8 and the electrodes 41 and 42 on the blue LED chip 87. Next, a phosphor is dispersed in advance in the resin as the wavelength conversion layer 7 so as to cover the upper surface 87a and the side surface 87b of the blue LED chip 87, the side surface of the reflecting surface forming body 52, and the side surface 28b of the convex portion 28. A phosphor sheet held in place is provided. Alternatively, after the phosphor kneaded resin is applied as the wavelength conversion layer 7, the phosphor is precipitated. Finally, the blue LED chip 87, the reflective surface forming body 52, the convex portion 28, and the wavelength conversion layer 7 are sealed with a transparent resin (not shown). The wavelength conversion layer 7 extends outward from the region where the blue LED chip 87 is disposed on the package substrate 8 so as to reliably cover the blue LED chip 87, the reflecting surface forming body 52, and the convex portion 28. An existing portion (referred to as an “outside extending portion”) 7 a is provided as a margin on the frame-like region 38 of the package substrate 8.

  In this example of the light emitting device, the height D8 from the upper surface of the frame-shaped region 38 to the reflecting surface 3 is larger than the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. Therefore, it is possible to effectively prevent the light emitted from the side surface 87b of the mounted blue LED chip 87 from being blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced. Further, since the package substrate 8 has the reflecting surface forming body 52, it is not necessary to provide the reflecting surface 3 on the blue LED chip 87.

(Ninth embodiment)
FIG. 15 shows a light emitting device of a blue LED chip 87 as one embodiment. In FIG. 15, the same elements as those in FIGS. 13 and 14 are denoted by the same reference numerals, and redundant description is omitted.

  In this light emitting device, the outer region 48 is formed outside the frame region 38 of the package substrate 8, and the upper surface of the frame region 38 is lower than the upper surface of the outer region 48 in the package substrate 8. Yes. A reflective surface forming body 52 is formed on the LED chip arrangement region 28 a, the reflective surface 3 is formed on the reflective surface forming body 52, and the blue LED chip 87 is fixed on the reflective surface 3. That is, the point that the frame-like region 38 is depressed on the package substrate 8 is different from the light emitting device of the blue LED chip 87 shown in FIG.

  This implementation is done as follows. First, the reflective surface forming body 52 is formed on the LED chip placement region 28a of the package substrate 8, the blue LED chip 87 is placed on the reflective surface forming body 52, and fixed with a die bond agent (not shown). Wire wirings 91 and 92 are provided between the electrodes 10 a and 10 b on 8 and the electrodes 41 and 42 on the blue LED chip 87. Next, a phosphor is dispersed in advance in the resin as the wavelength conversion layer 7 so as to cover the upper surface 87a and the side surface 87b of the blue LED chip 87, the side surface of the reflecting surface forming body 52, and the side surface 28b of the convex portion 28. A phosphor sheet held in place is provided. Alternatively, after the phosphor kneaded resin is applied as the wavelength conversion layer 7, the phosphor is precipitated. Finally, the blue LED chip 87, the reflective surface forming body 52, the convex portion 28, and the wavelength conversion layer 7 are sealed with a transparent resin (not shown). It should be noted that the wavelength conversion layer 7 has a wavelength conversion layer 7 that covers the concave portion 38 of the package substrate 8 more than the region where the blue LED chip 87 is disposed so as to securely cover the blue LED chip 87, the reflecting surface forming body 52, and the convex portion 28. A portion 7 a extending outward (referred to as an “outer extending portion”) 7 a is provided as a margin on the frame-shaped region 38 of the package substrate 8.

  In this example of the light emitting device, the height D8 from the upper surface of the frame-shaped region 38 to the reflecting surface 3 is larger than the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. Therefore, it is possible to effectively prevent the light emitted from the side surface 87b of the mounted blue LED chip 87 from being blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Further, since the height of the reflective surface 3 is higher than the height of the upper surface of the outer region 48, the light emitted from the side surface 87 b of the mounted blue LED chip 87 to the side is transmitted by the outer region 48 of the package substrate 8. It can be effectively prevented from being blocked. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Further, the height of the upper surface of the frame-shaped region 38 is lower than the height of the upper surface of the outer region 48. Therefore, when a phosphor sheet in which phosphors are dispersed and held in advance, for example, as the wavelength conversion layer 7 is provided, the phosphor sheet can be easily aligned with the blue LED chip 87 to improve productivity. can do.

  In addition, the depth of the recessed part 38 should just be about 1/2 or more with respect to the thickness of the outer side extension part 7a of the wavelength conversion layer 7. FIG. More specifically, the height D9 from the bottom surface of the concave portion 38 to the reflecting surface may be about one half or more with respect to the thickness of the outer extending portion 7a of the wavelength conversion layer 7.

Example 1
Next, the manufacturing method of the blue LED wafer 81 described in the first embodiment and the mounting method of the blue LED chip 81 ′ obtained from the blue LED wafer 81 will be specifically described.

  A phosphor sheet used as the wavelength conversion layer 7 for mounting the blue LED chip 81 ′ in FIG. 7 was prepared in advance. In this example, the phosphor sheet is prepared by kneading a YAG (yttrium, aluminum, garnet) phosphor in a silicone resin so that the concentration is 20% by volume, and preparing the phosphor kneaded resin. Was formed into a sheet having a uniform thickness of 50 μm. This phosphor sheet can generate yellow light as fluorescence.

  In order to manufacture the blue LED wafer 81, first, as shown in FIG. 1, a transparent conductive layer made of GaN and ITO (tin-added indium oxide) is formed on the first main surface 1a of the growth substrate 1 made of sapphire. Are sequentially laminated to form the light emitting layer 2. Thereafter, electrodes 41 and 42 made of gold were formed on the light emitting layer 2 (production of the laminated substrate was completed).

  Next, in order to form the reflecting surface forming body 5 along the second main surface 1b of the growth substrate 1, the silver paste is printed with a uniform thickness, heated to remelt the silver paste, and then cured. I let you. Thereby, the reflective surface forming body 5 having a thickness D1 (target 60 μm) equal to or greater than the thickness H (50 μm) of the phosphor sheet was formed (production of the blue LED wafer 81 was completed).

  Thereafter, the blue LED wafer 81 is diced and divided along the broken line X in FIG. 1 so as to have a predetermined dimension in the plane along the first main surface 1a of the growth substrate 1, and FIG. A plurality of blue LED chips 81 ′ as shown in the figure were obtained. In this example, the blue LED chip 81 ′ is a rectangular parallelepiped chip having a size of 0.2 mm square in the plane along the first main surface 1 a of the growth substrate 1 and a thickness of 0.15 mm.

  In this example, the thickness D1 of the reflecting surface forming body 5 of the produced blue LED chips 81 ′ is 58 μm on average and ± 2 μm in variation, and the thickness of the phosphor sheet used as the wavelength conversion layer 7 Compared to H (50 μm), it was equivalent or better. As described above, the formation of the reflecting surface forming body 5 and the setting of the thickness can be accurately performed collectively in the wafer state as a wafer process.

  The obtained blue LED chip 81 ′ was mounted by the face-up method as follows.

  First, as shown in FIG. 7, a blue LED chip 81 ′ was fixed at a predetermined position on the package substrate 8, and the reflecting surface forming body 5 was fixed to the package substrate 8 with a die bond agent (not shown).

  Further, the phosphor sheet (cut out with a size of 0.7 mm square) was placed on the blue LED chip 81 ′ and heated and bonded while being pressed with silicone rubber. Thereby, the wavelength conversion layer 7 covering the upper surface 81a and the side surface 81b of the blue LED chip 81 ′ was formed. At this time, the outer extending portion 7 a of the wavelength conversion layer 7 was designed to be 0.1 mm on one side with respect to the direction along the package substrate 8. When the dimension of the actually formed wavelength conversion layer (phosphor sheet in this example) 7 was measured, in FIG. 7, for example, the dimension of the left outer extension part 7a is 0.09 mm, and the right outer extension part 7a is The dimension was 0.11 mm.

  Next, portions of the wavelength conversion layer 7 on the electrodes 41 and 42 were removed and opened. Then, after one end of the wire wiring 91 is bonded to the N electrode 41 using heat and ultrasonic waves, the other end of the wire wiring 91 is bonded to the N electrode pattern 10a provided on the surface of the package substrate 8 using heat and ultrasonic waves. And joined. Similarly, after joining one end of the wire wiring 92 to the P electrode 42 using heat and ultrasonic waves, heat and ultrasonic waves are applied to the other end of the wire wiring 92 on the P electrode pattern 10 b provided on the surface of the package substrate 8. And joined. In this way, the electrodes 41 and 42 and the electrode patterns 10a and 10b were electrically connected via the wire wirings 91 and 92, respectively.

  Finally, the blue LED chip 81 ′ and the wavelength conversion layer 7 were sealed with a transparent resin (not shown).

  In the blue LED chip 81 ′ thus mounted, the height D 1 (target 60 μm, measured 58 μm ± 2 μm) of the reflecting surface 3 on the package substrate 8 is the thickness H of the outer extending portion 7 a of the wavelength conversion layer 7. (50 μm) is exceeded. Therefore, it is possible to effectively prevent the light emitted from the side surface 81b of the mounted blue LED chip 81 ′ from being laterally blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Actually, chromaticity variation and luminance of the mounted blue LED chip 81 ′ (Example 1) were measured. In addition, as a comparative example, the height of the reflection surface 3 on the package substrate 8 is 2 μm, and is less than the thickness H (50 μm) of the outer extending portion 7a of the wavelength conversion layer 7 (other points are implemented) The same thing as Example 1) was produced, and the chromaticity variation and the brightness | luminance were measured. As a result, the mounted blue LED chip 81 ′ (Example 1) has reduced chromaticity variation and improved luminance as compared with the comparative example.

(Example 2)
Next, the manufacturing method of the blue LED wafer 82 described in the second embodiment and the mounting method of the blue LED chip 82 ′ obtained from the blue LED wafer 82 will be specifically described.

  In the same manner as in Example 1, a phosphor sheet used as the wavelength conversion layer 7 for mounting the blue LED chip 82 'in FIG. In this example, the phosphor sheet is prepared by kneading a YAG phosphor with a silicone resin so that the concentration becomes 20% by volume, and preparing a phosphor kneaded resin. The phosphor kneaded resin has a uniform thickness of 50 μm. It was produced by molding into a sheet. This phosphor sheet can generate yellow light as fluorescence.

  In order to produce the blue LED wafer 82, first, as shown in FIG. 2, a GaN layer and a transparent conductive layer made of ITO are sequentially laminated on the first main surface 1a of the growth substrate 1 made of sapphire. Thus, the light emitting layer 2 was formed (completed production of the laminated substrate).

  Thereafter, silver was deposited on the light emitting layer 2 so as to have a uniform thickness, and the silver was patterned to form electrodes 41 and 42. Subsequently, the white solder resist 12 was embedded in the gap between the N electrode 41 and the P electrode 42. Thereby, the reflecting surface forming body 13 composed of the electrodes 41 and 42 and the white solder resist 12 was formed.

  Furthermore, bump electrodes 61 and 62 made of cylindrical gold as a structure were formed on the N electrode 41 and the P electrode 42, respectively (production of the blue LED wafer 82 was completed). Here, the outermost surfaces 61a and 62a of the bump electrodes 61 and 62 have the same height level. The distance D2 from the outermost surfaces 61a, 62a of the bump electrodes 61, 62 to the reflecting surface 3 in the direction perpendicular to the main surfaces 1a, 1b of the growth substrate 1 is the thickness of the phosphor sheet used as the wavelength conversion layer 7. It was set equal to or higher than H (50 μm), and the target was 60 μm.

  Thereafter, the blue LED wafer 82 is divided by dicing along the broken line X in FIG. 2 so as to have a predetermined dimension in the plane along the first main surface 1a of the growth substrate 1, and FIG. A plurality of blue LED chips 82 'as shown in the figure were obtained. In this example, the blue LED chip 82 ′ is a rectangular parallelepiped chip having a size of 0.2 mm square in the plane along the first main surface 1 a of the growth substrate 1 and a thickness of 0.15 mm.

  In this example, the distance D2 from the outermost surfaces 61a, 62a of the bump electrodes 61, 62 to the reflecting surface 3 of the plurality of blue LED chips 82 ′ thus manufactured is 59 μm on average and ± 3 μm in variation when measured. The phosphor sheet used as the wavelength conversion layer 7 was equal to or greater than the thickness of 50 μm.

  As described above, the formation of the reflecting surface forming body 13 and the bump electrodes 61 and 62 and the setting of the distance D2 from the outermost surfaces 61a and 62a of the bump electrodes 61 and 62 to the reflecting surface 3 are collectively performed in a wafer state as a wafer process. And was able to be performed with high accuracy.

  The obtained blue LED chip 82 'was mounted by the face-down method as follows.

  First, as shown in FIG. 8, the blue LED chip 82 'is made to correspond to a predetermined position on the package substrate 8, and the electrodes 10a and 10b on the package substrate 8 are made to correspond to the electrodes 41 and 42 of the blue LED chip 82', respectively. In this state, they were joined and fixed. Thus, the electrodes 41 and 42 and the electrode patterns 10a and 10b were electrically connected via the bump electrodes 61 and 62, respectively.

  Further, the phosphor sheet (cut out with a size of 0.7 mm square) was placed on the blue LED chip 82 ′ and heated and bonded while being pressed with silicone rubber. Thereby, the wavelength conversion layer 7 covering the upper surface 82a and the side surface 82b of the blue LED chip 82 'was formed. At this time, the outer extending portion 7 a of the wavelength conversion layer 7 was designed to be 0.1 mm on one side with respect to the direction along the package substrate 8. When the dimension of the actually formed wavelength conversion layer (phosphor sheet in this example) 7 was measured, in FIG. 8, for example, the dimension of the left outer extension part 7a is 0.08 mm, and the right outer extension part 7a is The dimension was 0.12 mm.

  Finally, the blue LED chip 82 'and the wavelength conversion layer 7 were sealed with a transparent resin (not shown).

  In the blue LED chip 82 ′ mounted in this manner, the height of the reflection surface 3 (target 60 μm, actual measurement 59 μm ± 3 μm) on the package substrate 8 is the thickness (50 μm) of the outer extending portion 7 a of the wavelength conversion layer 7. ) Is exceeded. Accordingly, it is possible to effectively prevent the light emitted from the side surface 82b of the mounted blue LED chip 82 'from being laterally blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Actually, chromaticity variation and luminance of the mounted blue LED chip 82 '(Example 2) were measured. In addition, as a comparative example, the height of the reflection surface 3 on the package substrate 8 is 2 μm, and is less than the thickness (50 μm) of the outer extending portion 7a of the wavelength conversion layer 7 (other points are the examples) 2), and the chromaticity variation and luminance were measured. As a result, the mounted blue LED chip 82 '(Example 2) has reduced chromaticity variation and improved luminance as compared with the comparative example.

(Example 3)
In Example 3, the blue LED wafer 82 shown in FIG. 2 was produced under the condition that the distance D2 from the outermost surfaces 61a and 62a of the bump electrodes 61 and 62 to the reflecting surface 3 was a target of 30 μm. The other points were the same as in Example 2.

  The blue LED wafer 82 thus produced was divided under the same conditions as in Example 2 to obtain a plurality of blue LED chips 82 '.

  In this example, the distance D2 from the outermost surfaces 61a, 62a of the bump electrodes 61, 62 to the reflecting surface 3 of the plurality of blue LED chips 82 ′ thus produced is measured to be 31 μm on average and ± 4 μm in variation. This corresponds to about 3/5 of the thickness of the phosphor sheet used as the wavelength conversion layer 7 of 50 μm.

  The obtained blue LED chip 82 'was mounted in a face-down manner as shown in FIG.

  In the blue LED chip 82 ′ mounted in this manner, the height of the reflection surface 3 (target 30 μm, actual measurement 31 μm ± 4 μm) on the package substrate 8 is the thickness (50 μm) of the outer extending portion 7 a of the wavelength conversion layer 7. ) Is equivalent to about 3/5. The height of the reflecting surface 3 is slightly lower than the thickness (50 μm) of the outer extending portion 7 a of the wavelength conversion layer 7. However, the height is more than half of the thickness (50 μm) of the outer extending portion 7 a of the wavelength conversion layer 7. Accordingly, it is possible to effectively prevent the light emitted from the side surface 82b of the mounted blue LED chip 82 'from being laterally blocked by the outer extending portion 7a of the wavelength conversion layer 7. As a result, the light extraction efficiency can be improved and color unevenness can be reduced.

  Actually, chromaticity variation and luminance of the mounted blue LED chip 82 '(Example 3) were measured. In addition, as a comparative example, the height of the reflection surface 3 on the package substrate 8 is 2 μm, and is less than the thickness (50 μm) of the outer extending portion 7a of the wavelength conversion layer 7 (other points are the examples) 3), and the chromaticity variation and luminance were measured. As a result, the mounted blue LED chip 82 '(Example 3) has reduced chromaticity variation and improved luminance as compared with the comparative example.

Example 4
Next, a method for manufacturing the blue LED wafer 85 described in the fifth embodiment and a method for mounting the blue LED chip 85 ′ obtained from the blue LED wafer 85 will be specifically described.

  In the same manner as in Example 1, a phosphor sheet used as the wavelength conversion layer 7 for mounting the blue LED chip 85 ′ in FIG. 11 was prepared in advance. In this example, a phosphor sheet is prepared by kneading a YAG phosphor with a silicone resin so that the concentration becomes 20% by volume, and preparing a phosphor kneaded resin. The phosphor kneaded resin has a uniform thickness of 10 μm. After forming into a sheet shape, it was produced by cutting out at 0.8 mm square. This phosphor sheet can generate yellow light as fluorescence.

  In order to produce the blue LED wafer 85, first, as shown in FIG. 5, a GaN layer and a transparent conductive layer made of ITO are sequentially laminated on the first main surface 1a of the growth substrate 1 made of sapphire. Thus, the light emitting layer 2 was formed (completed production of the laminated substrate).

  Thereafter, silver was deposited on the light emitting layer 2 so as to have a uniform thickness, and the silver was patterned to form electrodes 41 and 42. Subsequently, the white solder resist 12 was embedded in the gap between the N electrode 41 and the P electrode 42. Thereby, the reflecting surface forming body 13 composed of the electrodes 41 and 42 and the white solder resist 12 was formed. The thickness of the reflective surface forming body 10 was 12 μm, which is equal to or greater than the thickness of the phosphor sheet.

  Thereafter, the blue LED wafer 85 is diced and divided along the broken line X in FIG. 5 so as to have a predetermined dimension in the plane along the first main surface 1a of the growth substrate 1. A plurality of blue LED chips 85 ′ as shown in the figure were obtained. In this example, the blue LED chip 85 ′ is a rectangular parallelepiped chip having a size of 0.2 mm square in the plane along the first main surface 1 a of the growth substrate 1 and a thickness of 0.1 mm.

  The obtained blue LED chip 85 'was mounted by the face-down method as follows.

  First, as shown in FIG. 11, the blue LED chip 85 'is placed at a predetermined position on the package substrate 8, the electrodes 10a, 10b on the package substrates 8a, 8b and the electrodes 41, 42 on the blue LED chip 85' are respectively connected. Bonded and fixed in a corresponding state. Thereby, the electrodes 41 and 42 and the electrode patterns 10a and 10b were electrically connected.

  Further, the phosphor sheet (cut out with a 0.8 mm square size) was placed on a blue LED chip 85 'and heated and bonded while being pressed with silicone rubber. Thereby, the wavelength conversion layer 7 covering the upper surface 85a and the side surface 85b of the blue LED chip 85 'was formed. At this time, the outer extending portion 7 a of the wavelength conversion layer 7 was designed to be 0.2 mm on one side with respect to the direction along the package substrate 8. When the dimension of the actually formed wavelength conversion layer (phosphor sheet in this example) 7 was measured, in FIG. 11, for example, the dimension of the left outer extension part 7a is 0.1 mm, and the right outer extension part 7a is The dimension was 0.3 mm. On the other hand, the dimension of the upper surface portion of the blue LED chip 85 ′ was 10 μm.

  Finally, the blue LED chip 85 ′ and the wavelength conversion layer 7 were sealed with a transparent resin (not shown).

  Actually, chromaticity variation and luminance of the mounted blue LED chip 85 ′ (Example 4) were measured. At the same time, as a comparative example, a package in which the reflection surface 3 was formed on the package substrate 8 was fabricated, and the chromaticity variation and luminance were measured. As a result, the mounted blue LED chip 85 ′ (Example 4) showed less chromaticity variation than the comparative example.

  Therefore, the phosphor sheet is made longer than the side surface of the blue LED chip by forming the height D5 of the reflecting surface 3 on the package substrate 8 so as to exceed the thickness H of the outer extending portion 7a of the wavelength conversion layer 7. The wavelength conversion layer 7 having a uniform thickness could be formed on the upper surface of the blue LED chip. As a result, it is possible to form the wavelength conversion layer 7 having a uniform thickness on the upper surface of the blue LED chip even during mass production, because the required accuracy for dividing and positioning the phosphor sheet with high accuracy is not necessary. .

(Example 5)
Next, the mounting method of the blue LED chip 87 described in the eighth embodiment will be specifically described.

  In the same manner as in Example 1, a phosphor sheet used as the wavelength conversion layer 7 for mounting the blue LED chip 87 in FIG. In this example, the phosphor sheet is prepared by kneading a YAG phosphor with a silicone resin so that the concentration becomes 20% by volume, and preparing a phosphor kneaded resin. The phosphor kneaded resin has a uniform thickness of 50 μm. After forming into a sheet shape, it was produced by cutting out in a size of 1300 μm in length and 1100 μm in width. This phosphor sheet can generate yellow light as fluorescence.

  As a blue LED chip 87, as shown in FIG. 14, a growth substrate 1 made of sapphire, and a GaN layer and a transparent conductive layer made of ITO are sequentially stacked on the first main surface 1a of the growth substrate 1. An LED chip having a light emitting layer 2 formed by vapor deposition, and electrodes 41 and 42 formed by depositing silver on the light emitting layer 2 so as to have a uniform thickness and patterning the silver. Was used. This LED chip is a rectangular parallelepiped chip having a length of 500 μm, a width of 300 μm, and a thickness of 100 μm.

  Further, in order to mount the blue LED chip 87, a package substrate 8 was produced. In this example, the package substrate 8 was formed by printing a white resist ink on a sintered body of aluminum oxide and curing it, thereby forming the package substrate 8 having a convex portion 28 at the center. A reflective surface forming body 52 that forms the reflective surface 3 was formed on the upper surface of the convex portion 28. For comparison, a flat product was prepared without forming the convex portion 28 on the package substrate 8. All of the package substrates 8 excluding the protrusions 28 were 3 mm in length, 3 mm in width, and 1 mm in thickness.

  The blue LED chip 87 was mounted by the face-up method as follows.

  First, as shown in FIG. 14, the blue LED chip 87 is placed on the reflective surface forming body 52 formed on the convex portion 28 of the package substrate 8, and the die bond agent (not shown) is directed toward the convex portion 28. Fixed with.

  Next, the wavelength conversion layer 7 was formed by covering the top and side surfaces of the blue LED chip 87 excluding the electrodes 41 and 42, the reflection surface forming body 52, and the convex portions 28 with the phosphor sheet. At this time, a small amount of silicone resin is applied between the phosphor sheet and the blue LED chip 87, the reflecting surface forming body 52, and the convex portion 28 so that an air layer is not formed between the phosphor sheet and the LED element. The phosphor sheet, the blue LED chip 87, the reflecting surface forming body 52, and the convex portion 28 were bonded and fixed by heating and curing.

  Next, after one end of the wire wiring 91 is joined to the N electrode 41 using heat and ultrasonic waves, the other end of the wire wiring 91 is heated and ultrasonically applied to the N electrode pattern 10 a provided on the surface of the package substrate 8. And joined. Similarly, after joining one end of the wire wiring 92 to the P electrode 42 using heat and ultrasonic waves, heat and ultrasonic waves are applied to the other end of the wire wiring 92 on the P electrode pattern 10 b provided on the surface of the package substrate 8. And joined. In this way, the electrodes 41 and 42 and the electrode patterns 10a and 10b were electrically connected via the wire wirings 91 and 92, respectively.

  Finally, the blue LED chip 87 and the wavelength conversion layer 7 were sealed with a transparent resin (not shown).

  In order to measure the optical characteristics of the blue LED chip 87 mounted in this manner, ten mounted blue LED chips 87 were prepared. On the other hand, for comparison, a sample in which the blue LED chip 87 is mounted on a flat package substrate by a face-up method, and the wavelength forming layer 7 is formed by coating the blue LED chip 87 with a phosphor sheet on the upper surface and side surfaces. Created. As a result of applying an electric current to the LED chip of each sample and measuring the optical characteristics, the sample in which the convex portion 28 was formed on the package substrate 8 according to the embodiment of the present invention had an average total luminous flux of 8 lumens. On the other hand, the sample with the flat package substrate 8 has an average total luminous flux of 7 lumens. Therefore, with the configuration of the present invention, the total luminous flux can be improved as compared with the conventional case, that is, the light extraction efficiency can be improved. Moreover, the sample which formed the convex part 28 in the package board | substrate 8 which is an Example of this invention was the range of x = 0.2588-0.2633 and y = 0.2407-0.2452 in a chromaticity coordinate. On the other hand, the sample in which the conventional package substrate 8 is flat was in the range of x = 0.2570 to 0.2666 and y = 0.2389 to 0.2482 in chromaticity coordinates. Therefore, by adopting the configuration of the present invention, the chromaticity difference between samples can be made smaller than before.

  In the above embodiment, the case where the light emitting layer of the LED wafer generates blue light and the wavelength conversion layer generates yellow fluorescence has been described, but the present invention is not limited to this. The present invention can also be applied to the case where the light emitting layer of the LED wafer generates light of a color other than blue and the wavelength conversion layer generates fluorescence other than yellow.

  Further, although the wavelength conversion layer is made of a phosphor sheet in which the phosphor is uniformly dispersed in advance in the resin, the wavelength conversion layer is not limited to this. The wavelength conversion layer may be one in which the phosphor is precipitated after the phosphor kneaded resin is applied.

  The light-emitting device, LED chip, LED wafer, and package substrate of the present invention can be preferably used to construct a light source using LEDs, particularly a white light source.

DESCRIPTION OF SYMBOLS 1 Growth substrate 2 Light emitting layer 3 Reflective surface 5, 13, 14, 51, 52 Reflective surface formation body 5b Outermost surface 6 Spacer layer 7 Wavelength conversion layer 7a Outer extension part 8 Package substrate 15 1st reflective surface formation body 16 1st 2 reflective surface forming body 28a LED chip arrangement area 38 Frame area 48 Outer area 61, 62 Bump electrode 81, 82, 83, 84, 85, 86 LED wafer 81 ', 82', 83 ', 84', 85 ' , 86 ', 87' LED chip

Claims (25)

An LED chip disposed on the package substrate;
A wavelength conversion layer that covers the upper and side surfaces of the LED chip and converts the wavelength of light emitted from the light emitting layer of the LED chip;
The wavelength conversion layer has an outer extending portion that extends outward from a region where the LED chip is disposed on the package substrate,
The LED chip has a reflective surface that is disposed on the package substrate side of the LED chip along the package substrate and reflects light emitted from the light emitting layer to the package substrate side,
With respect to the direction perpendicular to the reflecting surface, the distance from the upper surface of the region where the outer extending portion of the wavelength conversion layer extends in the package substrate to the reflecting surface is the outer extending portion of the wavelength converting layer. The light emitting device is set to have a predetermined dimension or more according to the thickness of the light emitting device. The light-emitting device according to claim 1.
The LED chip is
A laminated substrate including the light emitting layer;
A reflective surface forming body that forms the reflective surface along one main surface of the two main surfaces of the laminated substrate,
The light emitting device, wherein an outermost surface of the reflecting surface forming body is in contact with the package substrate. The light-emitting device according to claim 2.
A structure is provided on the outermost surface of the reflecting surface forming body,
A light-emitting device, wherein an outermost surface of the structure is in contact with the package substrate. The light-emitting device according to claim 2 or 3,
When the LED chip is arranged with the outermost surface of the reflecting surface forming body or the structure facing the package substrate, the dimensions are set so that the height of the reflecting surface from the package substrate is 10 μm or more. A light-emitting device that is set. The light emitting device according to any one of claims 2 to 4,
The light emitting device, wherein the reflecting surface forming body is made of one or more of a metal material, a white material, and an opaque material having substantially the same color as the light emission color of the semiconductor layer. The light emitting device according to any one of claims 2 to 4,
The reflective surface forming body includes a first reflective surface forming body made of a transparent material having a refractive index lower than a refractive index of a portion along the reflective surface forming body of the laminated substrate, and a first made of a metal material. 2 reflective surface forming bodies,
A light emitting device, wherein an interface between the first reflecting surface forming body and the second reflecting surface forming body forms the reflecting surface. The light emitting device according to any one of claims 2 to 6,
The light emitting device, wherein the reflective surface forming body constitutes an electrode. The light-emitting device according to claim 1.
The package substrate has a reflective surface forming body that forms the reflective surface, which is disposed along the LED chip placement region on the LED chip placement region on which the LED chip is to be placed,
The light emitting device, wherein an outermost surface of the reflecting surface forming body is in contact with the package substrate. The light-emitting device according to claim 8.
The height of the reflection surface is higher than the height of the upper surface of the outer region corresponding to the outer side of the package substrate, the region extending outside the wavelength conversion layer. apparatus. The light-emitting device according to claim 8.
Of the package substrate, the height of the upper surface of the region where the outer extension portion of the wavelength conversion layer extends is higher than the upper surface of the outer region corresponding to the outer side of the region where the outer extension portion extends. A light emitting device characterized by being lower than the above. An LED chip mounted on a package substrate,
When the LED chip is disposed on the package substrate, the upper surface and the side surface of the LED chip are covered with a wavelength conversion layer that converts the wavelength of light emitted from the light emitting layer of the LED chip, and the wavelength conversion layer Has an outer extending portion that extends outward from a region where the LED chip is disposed on the package substrate,
The LED chip is
A laminated substrate including the light emitting layer;
A reflective surface forming body that forms the reflective surface along one main surface of the two main surfaces of the laminated substrate,
With respect to the direction perpendicular to the main surface of the multilayer substrate, the distance from the outermost surface of the reflecting surface forming body to the reflecting surface is a predetermined dimension or more according to the thickness of the outer extending portion of the wavelength conversion layer. LED chip characterized by being set to. The LED chip according to claim 11,
A structure is provided on the outermost surface of the reflecting surface forming body,
The distance from the outermost surface of the structure to the reflecting surface in place of the outermost surface of the reflecting surface forming body in the direction perpendicular to the main surface of the multilayer substrate is the outer extended portion of the wavelength conversion layer. An LED chip characterized in that it is set to have a predetermined dimension or more according to the thickness of the LED. The LED chip according to claim 11 or 12,
When the LED chip is arranged with the outermost surface of the reflecting surface forming body or the structure facing the package substrate, the dimensions are set so that the height of the reflecting surface from the package substrate is 10 μm or more. An LED chip characterized by being set. The LED chip according to any one of claims 11 to 13,
The LED chip, wherein the reflective surface forming body is made of one or more of a metal material, a white material, and an opaque material having substantially the same color as the emission color of the semiconductor layer. The LED chip according to any one of claims 11 to 13,
The reflective surface forming body includes a first reflective surface forming body made of a transparent material having a refractive index lower than a refractive index of a portion along the reflective surface forming body of the laminated substrate, and a first made of a metal material. 2 reflective surface forming bodies,
The LED chip, wherein an interface between the first reflecting surface forming body and the second reflecting surface forming body forms the reflecting surface. The LED chip according to any one of claims 11 to 13,
The LED chip, wherein the reflective surface forming body constitutes an electrode. An LED wafer that becomes an LED chip by dividing,
When the LED chip is disposed on the package substrate, the upper surface and the side surface of the LED chip are covered with a wavelength conversion layer that converts the wavelength of light emitted from the light emitting layer of the LED chip, and the wavelength conversion layer is And having an outer extending portion that extends outward from a region where the LED chip is disposed on the package substrate,
The LED wafer is
A laminated substrate including the light emitting layer;
A reflective surface forming body that forms the reflective surface along one main surface of the two main surfaces of the laminated substrate,
With respect to the direction perpendicular to the main surface of the multilayer substrate, the distance from the outermost surface of the reflecting surface forming body to the reflecting surface is a predetermined dimension or more according to the thickness of the outer extending portion of the wavelength conversion layer. LED wafer characterized by being set to. The LED wafer according to claim 17,
A structure is provided on the outermost surface of the reflecting surface forming body,
The distance from the outermost surface of the structure to the reflecting surface in place of the outermost surface of the reflecting surface forming body in the direction perpendicular to the main surface of the multilayer substrate is the outer extended portion of the wavelength conversion layer. An LED wafer characterized by being set to a predetermined dimension or more according to the thickness of the LED. The LED wafer according to claim 17 or 18,
When the LED chip is arranged with the outermost surface of the reflecting surface forming body or the structure facing the package substrate, the dimensions are set so that the height of the reflecting surface from the package substrate is 10 μm or more. An LED wafer characterized by being set. The LED wafer according to any one of claims 17 to 19,
The LED wafer, wherein the reflective surface forming body is made of one or more of a metal material, a white material, and an opaque material having substantially the same color as the emission color of the semiconductor layer. The LED wafer according to any one of claims 17 to 19,
The reflective surface forming body includes a first reflective surface forming body made of a transparent material having a refractive index lower than a refractive index of a portion along the reflective surface forming body of the laminated substrate, and a first made of a metal material. 2 reflective surface forming bodies,
An LED wafer, wherein an interface between the first reflecting surface forming body and the second reflecting surface forming body forms the reflecting surface. The LED wafer according to any one of claims 17 to 19,
The LED wafer, wherein the reflective surface forming body constitutes an electrode. A package substrate on which an LED chip is to be mounted,
LED chip placement area where the LED chip should be placed;
A frame-like region surrounding the outside of the LED chip arrangement region;
A reflective surface forming body arranged along the LED chip arrangement area on the LED chip arrangement area;
When the LED chip is disposed on the reflective surface forming body, the upper surface and the side surface of the LED chip are covered with a wavelength conversion layer that converts the wavelength of light emitted from the light emitting layer of the LED chip, and the wavelength The conversion layer has an outer extending portion extending on the frame-shaped region,
The reflective surface forming body is configured to form a reflective surface that reflects light emitted from the light emitting layer of the LED chip to the LED chip arrangement region side,
With respect to the direction perpendicular to the reflecting surface, the distance from the upper surface of the frame-like region to the reflecting surface is set to a predetermined dimension or more according to the thickness of the outer extending portion of the wavelength conversion layer. Package substrate characterized by. The package substrate according to claim 23,
The package substrate according to claim 1, wherein a height of the reflection surface is higher than a height of an upper surface of an outer region corresponding to an outer side of the frame-like region. The package substrate according to claim 23,
A package substrate, wherein a height of an upper surface of the frame-like region is lower than a height of an upper surface of an outer region corresponding to the outside of the frame-like region.

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