JP2013183020A - Semiconductor light-emitting device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of setting a light-emitting surface to a desired size, and a method for manufacturing the same.SOLUTION: A method for manufacturing a semiconductor light-emitting device comprises the steps of: bonding a light-emitting unit; forming a translucent resin layer; forming a wavelength conversion layer; and cutting an adhesion layer. The bonding step bonds a surface of a reinforcing resin layer of a first light-emitting unit and a surface of a reinforcing resin layer of a second light-emitting unit to a first surface of an adhesion layer at a prescribed interval. The translucent resin layer forming step forms a translucent resin layer covering a region in which the first and second light-emitting units are not provided on the first surface of the adhesion layer and the first and second light-emitting units. The wavelength conversion layer forming step forms a wavelength conversion layer including a phosphor particle on the translucent resin layer. The cutting step cuts the translucent resin layer so as to include the first and second light-emitting units.

Description

  Embodiments described herein relate generally to a semiconductor light emitting device and a method for manufacturing the same.

  When the package of the semiconductor light emitting device is reduced in size, it becomes easy to mount the semiconductor light emitting device on the mounting substrate at a high density. For this reason, the luminous flux of the illumination device can be increased.

  In order to increase the overall size of the light emitting surface of the lighting device while keeping the light emission efficiency high, a plurality of small semiconductor light emitting devices may be arranged at appropriate intervals.

  However, an assembly line with high productivity is required to bond a plurality of semiconductor light emitting devices on the mounting substrate and to make electrical connection with the mounting substrate.

JP 2011-114093 A

  Provided are a semiconductor light-emitting device and a method for manufacturing the same, in which a light-emitting surface can be easily set to a desired size while maintaining high luminous efficiency.

  The manufacturing method of the semiconductor light emitting device of the embodiment includes a step of bonding the first and second light emitting units to the adhesive layer, a step of forming a translucent resin layer, a step of forming a wavelength conversion layer, and an adhesive layer Cutting. The first and second light emitting units are provided on the first surface, a semiconductor laminate having a first surface and a light emitting surface opposite to the first surface and including a light emitting layer. The p-side electrode and the n-side electrode, the p-side extraction electrode connected to the p-side electrode, the n-side extraction electrode connected to the n-side electrode, the surface of the p-side extraction electrode, and the n-side And a reinforcing resin layer provided so as to expose the surface of the extraction electrode and surround the side surfaces of the p-side extraction electrode and the n-side extraction electrode. In the bonding step, the surface of the reinforcing resin layer of the first light emitting unit and the surface of the reinforcing resin layer of the second light emitting unit are bonded to the first surface of the adhesive layer at a predetermined interval. . The step of forming the translucent resin includes a region of the first surface of the adhesive layer where the first and second light emitting units are not provided, and the first and second light emitting units. A translucent resin layer to cover is formed. In the step of forming the wavelength conversion layer, a wavelength conversion layer containing phosphor particles is formed on the translucent resin layer. The cutting step cuts at least the translucent resin layer so as to include the first and second light emitting units.

FIG. 1A is a schematic perspective view of the semiconductor light emitting device according to the first embodiment, and FIG. 1B is a schematic bottom view. 2A to 2E are schematic views for explaining a method for manufacturing a light emitting unit. FIG. 2A is a cross-sectional view of the light emitting element, and FIG. 2B is a drawing electrode forming insulating film. 2C is a cross-sectional view of the wafer on which the seed metal and the metal wiring layer are formed, FIG. 2D is a cross-sectional view of the wafer on which the metal pillar is formed, and FIG. It is sectional drawing of the wafer in which the reinforcement resin was formed. FIG. 3A is a schematic sectional view of a first modification of the wafer-like light emitting unit, and FIG. 3B is a schematic bottom view. FIG. 4A is a schematic cross-sectional view of a second modification of the wafer-like light emitting unit, and FIG. 4B is a schematic cross-sectional view of the third modification. 5A to 5D are schematic views for explaining the method for manufacturing the semiconductor light emitting device of the first embodiment. FIG. 5A is a cross-sectional view of the light emitting unit, and FIG. FIG. 5C is a cross-sectional view of a semiconductor light-emitting device to which a translucent resin layer is applied, and FIG. 5D is a cross-sectional view of the semiconductor light-emitting device after separation. is there. It is a schematic cross section of the light emitting device according to the second embodiment. It is a schematic cross section of the light emitting device according to the third embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1A is a schematic perspective view of the semiconductor light emitting device according to the first embodiment, and FIG. 1B is a schematic bottom view.
The light emitting device includes an adhesive layer 20, a plurality of light emitting units 11, and a translucent resin layer 30. The light emitting unit 11 can be, for example, a WLP (Wafer Level Package) type light emitting element. That is, the wafer process includes a device packaging process.

  In FIG. 1A, the emitted light G is emitted upward of the light emitting unit 11. A p-side lead electrode 67a and an n-side lead electrode 67b are provided on the surface of the light emitting unit 11 opposite to the light emitting direction.

  The sheet-like adhesive layer 20 has a first surface 20a and a second surface 20b on the side opposite to the first surface 20a. The light emitting units 11 divided from the wafer are arranged on the first surface 20a of the adhesive layer 11 at a predetermined interval (pitch). The translucent resin layer 30 is provided so as to cover the light emitting unit 11 and the first surface 20 a of the adhesive layer 11.

  As shown in FIG. 1B, openings 20c and 20d are provided in the second surface 20b of the adhesive layer 20, and the p-side extraction electrode 67a and the n-side extraction electrode 67b of the light emitting unit 11 are exposed. doing. The openings 20c and 20d may be openings in which the p-side lead electrode 67a and the n-side lead electrode 67b are different, or may be a common opening. In the present embodiment, the p-side extraction electrode 67a and the n-side extraction electrode 67b are formed by a wafer process.

  In FIGS. 1A and 1B, the translucent resin layer 30 and the adhesive layer 20 are cut so that the light emitting unit 11 is 2 × 2, but the present invention is not limited to this. What is necessary is just to change the cutting position of the contact bonding layer 20 according to a desired light beam and a light distribution characteristic. Since the adhesive strength between the light emitting unit 11 and the translucent resin layer 30 is high, the adhesive layer 20 may be removed.

  If an attempt is made to increase the luminous flux by increasing the size of one chip, the inside of the light-emitting layer tends to be unevenly operated, and even if the luminous flux increases, the luminous efficiency may decrease. On the other hand, according to the first embodiment, the luminous flux is increased by increasing the number of light emitting units without increasing the luminous flux per light emitting unit. For this reason, it becomes easy to obtain a desired light flux without lowering the luminous efficiency.

  Further, if the package type light emitting device is bonded onto the mounting substrate and further connected to the wiring pattern, it is difficult to freely change the arrangement of the light emitting units. In addition, mounting time is required, and mass productivity is reduced.

  2A to 2E are schematic views illustrating a manufacturing method for manufacturing a light emitting unit. That is, FIG. 2A is a cross-sectional view of a light-emitting element in which a laminate including a light-emitting layer, a p-side electrode, and an n-side electrode are formed on a substrate, and FIG. 2C is a cross-sectional view of a wafer on which a seed metal and a metal wiring layer are formed, FIG. 2D is a cross-sectional view of the wafer on which a metal pillar is formed, and FIG. (E) is sectional drawing of the wafer in which the reinforced resin layer was formed.

2A to 2E, the stacked body made of a semiconductor has a composition of In _x Ga _y Al _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x + y ≦ 1). and made of a nitride-based semiconductor of the formula, _{but, in x (Ga y Al 1} -y) 1-x P (0 ≦ x ≦ 1,0 ≦ y ≦ 1) and _{Al x Ga 1-x} A material such as As (0 ≦ x ≦ 1) may be used.

  In FIG. 2A, a stacked body 52 having a lower layer 52b including an n-type layer and an upper layer 52a is formed on a substrate 50 such as sapphire. The first surface 52d of the stacked body 52 has a step including the surface of the upper layer 52a and the surface of the lower layer 52b exposed by removing the upper layer 52a. In addition, the light emission surface 52c of the stacked body 52 on the side opposite to the first surface 52d is adjacent to the substrate 50 and is substantially flat. The lower layer 52b may be a p-type layer, and in this case, the electrodes have opposite polarities.

  Subsequently, as shown in FIG. 2B, an insulating film 60 is formed so as to cover the p-side electrode 54 and the n-side electrode 56, and a part of each of the p-side electrode 54 and the n-side electrode 56 is exposed. Openings 60a and 60b are respectively formed in the substrate.

  Subsequently, a seed metal 62 made of Ti / Cu or the like is formed. As shown in FIG. 2C, a metal wiring layer 64 made of copper or the like is selectively formed by electrolytic plating using a photoresist or the like as a mask. In this way, metal wiring layers 64a and 64b separated from each other are formed.

  Subsequently, as shown in FIG. 2D, by using an electrolytic plating method, a metal pillar 66a made of copper or the like connected to the metal wiring layer 64a, and a metal pillar 66b made of copper or the like connected to the metal wiring layer 64b, , Respectively. The seed metal 62, the metal wiring layer 64, and the metal pillar 66 constitute an extraction electrode 67. For example, the metal wiring layer 64 and the metal pillar 66 may be continuous.

  Subsequently, as shown in FIG. 2E, a reinforcing resin layer 58 is formed around the metal pillars 66a and 66b so as to have a thickness substantially equal to or less than the thickness of the metal pillars 66a and 66b. In such a light emitting unit 11, since the laminated body 52 is separated in a state where the residual stress is small and is fixed to a flexible support body, the laminated body 52 is not cracked, and is manufactured with a high yield. It becomes possible. In addition, the manufacturing method of the light emission unit 11 is not limited to Fig.2 (a)-(e).

FIG. 3A is a schematic sectional view of a first modification of the wafer-like light emitting unit, and FIG. 3B is a schematic bottom view.
As shown in FIG. 3A, the light emitting unit 11 can remove the substrate 50. Further, the lower layers 52b of the stacked body 52 may be separated from each other. Further, as shown in FIG. 3B, when the p-side lead electrode 67a and the n-side lead electrode 67b are arranged in a well-balanced manner, mounting on the mounting board becomes easy.

4A is a schematic cross-sectional view of a second modification of the wafer-like light emitting unit, and FIG. 4B is a schematic cross-sectional view of a third modification of the light emitting unit.
As shown in FIG. 4A, a protective resin layer 70 having translucency may be provided on the surface of the lower layer 52b of the stacked body 52. The protective resin layer 70 can be made of, for example, silicone. The thickness of the protective resin layer 70 can be, for example, 200 μm or more and 2 mm or less. As shown in FIG. 4B, the protective resin layer 70 may have phosphor particles 34 dispersedly arranged. The light emitting layer is made of a nitride semiconductor and emits blue to blue-violet light. The phosphor particles 34 that have absorbed the emitted light emit, for example, wavelength-converted light that is yellow light. For this reason, the emitted light G can be white light which is a mixed light of the emitted light and the wavelength converted light. Further, as shown in the drawing, the stacked body 52 may be continuous in the wafer state.

  5A to 5D are schematic views for explaining the method for manufacturing the semiconductor light emitting device of the first embodiment. 5A is a sectional view of a light emitting unit in a wafer state, FIG. 5B is a sectional view of an adhesive layer to which the light emitting unit is bonded, and FIG. 5C is a case where a translucent resin layer is applied. FIG. 5D is a cross-sectional view of the semiconductor light emitting device after separation.

  The wafer 10 shows a state before being divided into the light emitting units 11. The thickness TW of the wafer 10 can be reduced to, for example, 100 to 300 μm. As shown in FIG. 5A, since the light emitting unit 11 is sealed in a wafer state, it can be handled in the same manner as a light emitting device molded with a transparent resin layer or the like. Each light emitting unit 11 can measure light emission characteristics such as a light emission wavelength in a wafer state.

  Subsequently, as shown in FIG. 5B, for example, the first light emitting unit 11a and the second light emitting unit 11b are attached to the first surface 20a of the adhesive layer 20 by a vacuum mounting method at a predetermined interval P. Use and glue. The adhesive layer 20 includes, for example, a base material made of PET (Polyethylene Terephthalate) or the like, and an adhesive material made of UV (Ultra Violet) cured resin or the like provided on the surface of the base material. The surface of the adhesive material becomes the first surface 20a. The adhesive layer 20 is a die attachment film (DAF) or the like, and the thickness TS can be, for example, 15 to 20 μm.

  In this case, it is preferable that the arrangement accuracy of the extraction electrode 67 exposed on the second surface 20b of the adhesive layer 20 be in the following range. For example, when the size of the extraction electrode 67 is 210 μm in the x direction and 300 μm in the y direction, it is preferable that the positional deviation is 70 μm or less in the x direction and 100 μm or less in the y direction because mounting reliability can be secured. . Further, the positional deviation is more preferably 42 μm or less in the x direction and 60 μm in the y direction, which is 1/5 or less of the size of the extraction electrode 67.

  When the light emitting units 11 classified according to the emission wavelength standard are selected, rearranged, and bonded, it becomes easy to obtain a semiconductor light emitting device with small variation in chromaticity.

  Subsequently, as shown in FIG. 5C, a liquid resin is applied so as to cover the light emitting unit 11, and thermosetting is performed to form the translucent resin layer 30. Examples of the resin include silicone and epoxy. The thickness TC of the translucent resin layer 30 is larger than the thickness TW of the light-emitting unit 11. For example, when the thickness TC is 0.2 to 2 mm, it is easy to ensure mechanical strength.

  Further, as shown in FIG. 5D, the number of the light emitting units 11 is determined according to the desired light output and light distribution characteristics, and the light emitting units 11a and 11b are included by cutting at the position of the dicing line DL indicated by a broken line. Separated into semiconductor light emitting devices. In the cutting step, at least the translucent resin layer 30 is cut. The resin layer 20 may be removed after cutting, leaving the resin layer 20. Note that openings 20c and 20d are provided for connecting the p-side lead electrode 67a, the n-side lead electrode 67b, and the wiring portion of the mounting substrate. The openings 20c and 20d may be provided either before or after the light emitting unit 11 is bonded.

  Further, phosphor particles or the like may be dispersed in the translucent resin layer 30. Further, glass can be used instead of the translucent resin layer. Note that the number of the light emitting units 11 is not limited to two and may be large. Further, the arrangement may be a matrix shape or a diamond shape. That is, it can arrange so that it may become the number from which a desired light beam is obtained.

  The manufacturing method of the semiconductor light emitting device according to the first embodiment does not require a process of connecting the chip and the package or between the chip and the mounting substrate by wire bonding or bumps such as metal or solder. For this reason, mass productivity can be improved and it can be set as a manufacturing method. Moreover, the semiconductor light emitting device that has completed the assembly process is prepared in a sheet state without being divided, and the light emitting device having a luminous flux according to customer requirements can be supplied quickly by performing the adhesive layer cutting step, turn-around time).

FIG. 6 is a schematic cross-sectional view of the light emitting device according to the second embodiment.
A translucent resin layer 30 is provided so as to cover the light emitting units 11a and 11b having light emitting layers made of a nitride semiconductor. Further, a wavelength conversion layer 32 including phosphor particles 34 is provided on the translucent resin layer 30. For example, the wavelength conversion layer 32 may be formed by dispersing phosphor particles 34 in a silicone resin or the like.

  The thickness TP of the wavelength conversion layer 32 can be set to 20 μm or more and 2 mm or less, for example. When the distance T1 between the light emitting layer 52e of the laminate 52 and the upper surface of the wavelength conversion layer 32 and the emission angle α of the emitted light g1, g2, g3, etc. change, the mixture of the emitted light and the wavelength converted light from the light emitting layer 52e The chromaticity of light may change. On the cut surface S, the adhesive layer 20, the translucent resin layer 30, and the wavelength conversion layer 32 are exposed.

  Since the emitted light from the semiconductor light emitting layer is mainly emitted from the light emitting surface which is the upper surface of the light emitting unit 11, the luminance of the region between the light emitting units 11 is lowered. However, in the present embodiment, a resin in which a wavelength conversion material such as phosphor particles is dispersed can be collectively applied to the first surface 20 a side of the adhesive layer 20. For this reason, the emitted light from the light emitting layer 52e is scattered by the wavelength conversion material and reaches the region between the light emitting units 11. For this reason, the fall of the brightness | luminance in the area | region between the light emission units 11 is suppressed, and a uniformity is improved.

  In this case, it is more preferable that the refractive index of the translucent resin layer 30 is lower than the refractive index of the wavelength conversion layer 32 because the emitted light is likely to enter the wavelength conversion layer 32. When the stacked body 52 is an InGaAlN-based material, the emitted light has a wavelength range of ultraviolet light to blue light. If the phosphor particles 34 are made of a yellow phosphor, white light can be obtained as mixed light with emitted light. That is, according to the second embodiment, it is possible to provide a semiconductor light emitting device capable of emitting white light with uniform chromaticity and having a desired light output.

FIG. 7 is a schematic cross-sectional view of a semiconductor light emitting device according to the third embodiment.
This figure shows the state before cutting the adhesive layer. On the first surface 20a of the adhesive layer 20, a reflective sheet 36 provided with a reflective material is provided in a region between the first light emitting unit 11a and the second light emitting unit 11b. If it does in this way, the light leakage to the 2nd surface 20b side which is the back surface of the contact bonding layer 20 can be reduced. If the translucent resin layer 30 includes a wavelength conversion material such as phosphor particles, light directed downward from the wavelength conversion material can be reflected upward.

  According to the first to third embodiments, it is possible to provide a semiconductor light emitting device in which it is easy to make the light emitting surface have a desired size while keeping the light emission efficiency high. Moreover, the manufacturing method which is rich in mass productivity is provided. Such a semiconductor light emitting device can be widely used in lighting devices, traffic lights, display devices, and the like.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

11, 11a, 11b Light-emitting unit, 20 adhesive layer, 20a first surface, 20b second surface, 20c, 20d opening, 30 translucent resin layer (translucent material layer), 32 wavelength conversion layer, 34 Phosphor particle, 36 reflective sheet, 52 semiconductor laminate, 54 p-side electrode, 56 n-side electrode, 58 reinforcing resin layer, 67, 67a, 67b lead electrode, TW wafer thickness, TS adhesive layer thickness, TC Thickness of translucent resin layer, G outgoing light, P predetermined interval

Claims (11)

A semiconductor stacked body having a first surface and a light emitting surface opposite to the first surface and including a light emitting layer; a p-side electrode and an n-side electrode provided on the first surface; Exposing the p-side lead electrode connected to the p-side electrode, the n-side lead electrode connected to the n-side electrode, the surface of the p-side lead electrode and the surface of the n-side lead electrode, and the p A method of manufacturing a semiconductor light emitting device including first and second light emitting units each including a side surface of a side extraction electrode and a reinforcing resin layer provided so as to surround a side surface of the n side extraction electrode,
Bonding the surface of the reinforcing resin layer of the first light emitting unit and the surface of the reinforcing resin layer of the second light emitting unit at a predetermined interval to the first surface of the adhesive layer;
Forming a translucent resin layer that covers a region of the first surface of the adhesive layer where the first and second light emitting units are not provided and the first and second light emitting units; ,
Providing a wavelength conversion layer containing phosphor particles on the translucent resin layer;
Cutting the translucent resin layer at least so as to include the first and second light emitting units;
A method for manufacturing a semiconductor light emitting device comprising: A semiconductor stacked body having a first surface and a light emitting surface opposite to the first surface and including a light emitting layer; a p-side electrode and an n-side electrode provided on the first surface; Exposing the p-side lead electrode connected to the p-side electrode, the n-side lead electrode connected to the n-side electrode, the surface of the p-side lead electrode and the surface of the n-side lead electrode, and the p A method of manufacturing a semiconductor light emitting device including first and second light emitting units each including a side surface of a side extraction electrode and a reinforcing resin layer provided so as to surround a side surface of the n side extraction electrode,
Bonding the surface of the reinforcing resin layer of the first light emitting unit and the surface of the reinforcing resin layer of the second light emitting unit at a predetermined interval to the first surface of the adhesive layer;
Forming a translucent material layer that covers a region of the first surface of the adhesive layer where the first and second light-emitting units are not provided and the first and second light-emitting units; ,
Cutting at least the translucent material layer to include the first and second light emitting units;
A method for manufacturing a semiconductor light emitting device comprising:   The method of manufacturing a semiconductor light emitting device according to claim 2, further comprising a step of removing the adhesive layer after the cutting step.   The method for manufacturing a semiconductor light emitting device according to claim 2, wherein the translucent material layer is made of resin or glass. A semiconductor stacked body having a first surface and a light emitting surface opposite to the first surface and including a light emitting layer; a p-side electrode and an n-side electrode provided on the first surface; A p-side lead electrode connected to the p-side electrode; an n-side lead electrode connected to the n-side electrode; and a side surface of the p-side lead electrode and a side surface of the n-side lead electrode. A first light emitting unit and a second light emitting unit having a reinforcing resin layer;
The surface of the reinforcing resin layer of the first light emitting unit, the surface of the p-side lead electrode, the surface of the n-side lead electrode, the surface of the reinforcing resin layer of the second light-emitting unit, and the p-side lead electrode The first light emitting unit and the second light emitting unit are covered with a predetermined distance so as to expose the surface of the light emitting layer and the surface of the n-side electrode, and the light emitted from the light emitting layer can be transmitted. A light-sensitive material layer;
A semiconductor light emitting device comprising:   An adhesive layer having a first surface and a second surface opposite to the first surface, wherein the first surface includes the reinforcing resin layer of the first light emitting unit. The semiconductor light emitting device according to claim 5, further comprising an adhesive layer in which the surface and the surface of the reinforcing resin layer of the second light emitting unit are bonded.   7. The semiconductor light emitting device according to claim 5, wherein each of the first and second light emitting units further includes a protective resin layer in contact with the light transmissive material layer.   The semiconductor light-emitting device according to claim 7, further comprising phosphor particles dispersed in the protective resin layer.   The semiconductor light-emitting device according to claim 5, further comprising a wavelength conversion layer provided on the translucent material layer.   The opening which exposes the said surface of the said p side extraction electrode, and the said surface of the said n side extraction electrode was provided in the said 2nd surface of the said contact bonding layer. The semiconductor light-emitting device described in 1.   Reflection provided on the surface side of the translucent material layer between the surface of the reinforcing resin layer of the first light emitting unit and the surface of the reinforcing resin layer of the second light emitting unit. The semiconductor light-emitting device according to claim 5, further comprising a sheet.

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