JP5592963B2 - Light source device using semiconductor light emitting device - Google Patents

Description

  Embodiments described herein relate generally to a light source device using a semiconductor light emitting device.

  As a small light-emitting device with low power consumption, a white LED light-emitting device that emits white light by combining a light emitting unit such as a blue LED (Light Emitting Diode) and a phosphor has been developed.

  For example, a semiconductor light emitting device having a structure in which a phosphor is applied to the surface of an LED chip after die bonding the LED chip to a lead frame or a conductive substrate to perform wire bonding is known. However, in such a semiconductor light emitting device, in addition to the LED chip, members such as a lead frame, a conductive substrate, and a bonding wire are necessary, which increases the size of the device and hinders downsizing.

  In a light source device using a miniaturized light emitting unit, obtaining high heat dissipation is particularly important for improving luminous efficiency.

JP 2001-210874 A

  Embodiments of the present invention provide a light source device with high heat dissipation using a small semiconductor light emitting device.

According to an embodiment of the present invention, a light source device including a semiconductor light emitting device, a mounting substrate, a first connection material, and a second connection material is provided. The semiconductor light emitting device includes a light emitting unit, a first conductive unit, a second conductive unit, a sealing unit, an optical layer, and an insulating layer. The mounting substrate includes a base and first and second substrate electrodes provided on a surface of the base facing the semiconductor light emitting device. The first connecting member electrically connects the first conductive portion and the first substrate electrode. The second connecting member electrically connects the second conductive portion and the second substrate electrode. The light emitting unit includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A first main surface on the first semiconductor layer side and a second main surface on the second semiconductor layer side, wherein the second semiconductor layer and the light emitting layer are selectively removed and the first A semiconductor stacked body in which a part of the first semiconductor layer is exposed on two main surfaces; a first light-emitting portion electrode electrically connected to the first semiconductor layer on the second main surface side; and the second And a second light emitting part electrode electrically connected to the second semiconductor layer on the main surface side. The second light emitting unit electrode includes at least one metal material of silver, aluminum, gold, and nickel. The first conductive portion is electrically connected to the first light emitting portion electrode, and is provided with a first column portion standing on the second main surface, the first light emitting portion electrode, and the first column portion. And a first connection part for electrically connecting the two. The second conductive portion is electrically connected to the second light emitting portion electrode, and is provided with a second column portion standing on the second main surface, the second light emitting portion electrode, and the second column portion. And a second connection portion that electrically connects the two. The second connection part is made of a material containing copper and different from the material of the second light emitting part electrode. The sealing portion covers a side surface of the first conductive portion and a side surface of the second conductive portion. The optical layer is an optical layer provided on the first main surface of the semiconductor stacked body, and absorbs emitted light emitted from the light emitting layer and emits light having a wavelength different from the wavelength of the emitted light. A wavelength conversion unit for emission is included. The insulating layer is provided between a part of the second semiconductor layer on the second main surface side and the first connection portion. The first connection portion and the first pillar portion cover the part of the second semiconductor layer on the second main surface side via the insulating layer. A cross-sectional area obtained by cutting the first column part along a plane perpendicular to the direction from the second main surface toward the first main surface is larger than the area of the first light emitting unit electrode. A cross-sectional area obtained by cutting the second column part along the plane is smaller than a cross-sectional area obtained by cutting the second connection part along the plane.

FIG. 1A and FIG. 1B are schematic views illustrating the configuration of the light source device according to the embodiment. 2A and 2B are schematic views illustrating the configuration of a semiconductor light emitting device used in the light source device according to the embodiment. FIG. 3A to FIG. 3C are schematic views illustrating the thermal characteristics of the light source device according to the embodiment. FIG. 4A to FIG. 4E are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting device used in the light source device according to the embodiment. FIG. 5A to FIG. 5E are schematic cross-sectional views in order of the processes, illustrating a method for manufacturing a semiconductor light emitting device used in the light source device according to the embodiment. 6A to 6E are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting device used for the light source device according to the embodiment. FIG. 7A to FIG. 7C are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the mounting board used in the light source device according to the embodiment. FIG. 8A and FIG. 8B are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the light source device according to the embodiment. FIG. 9A to FIG. 9C are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting device used in the light source device according to the embodiment. FIG. 10A to FIG. 10C are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting device used in the light source device according to the embodiment. It is a typical sectional view which illustrates the composition of another light source device concerning an embodiment.

Embodiments of the present invention will be described below with reference to the drawings.
The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between the parts, and the like are not necessarily the same as actual ones. Further, even when the same part is represented, the dimensions and ratios may be represented differently depending on the drawings.
Note that, in the present specification and each drawing, the same elements as those described above with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof is omitted as appropriate.

(Embodiment)
FIG. 1A and FIG. 1B are schematic views illustrating the configuration of the light source device according to the embodiment.
That is, FIG. 1B is a schematic plan view, and FIG. 1A is a cross-sectional view taken along the line AA ′ in FIG.
2A and 2B are schematic views illustrating the configuration of a semiconductor light emitting device used in the light source device according to the embodiment.
2B is a schematic plan view, and FIG. 2A is a cross-sectional view taken along the line AA ′ in FIG. 2B.

  As shown in FIGS. 1A and 1B, the light source device 310 according to the present embodiment includes the semiconductor light emitting device 110, the mounting substrate 250, the first connection material 230a, and the second connection material 230b. And comprising.

  The semiconductor light emitting device 110 includes a light emitting unit 10d, a first conductive unit 30a, a second conductive unit 30b, a sealing unit 50, and an optical layer 60.

  The mounting substrate 250 includes a base 201, a first substrate electrode 210a, and a second substrate electrode 210b. The first substrate electrode 210 a and the second substrate electrode 210 b are provided on the surface of the base 201 facing the semiconductor light emitting device 110.

  The first connecting member 230a electrically connects the first conductive part 30a and the first substrate electrode 210a. The second connection member 230b electrically connects the second conductive part 30b and the second substrate electrode 210b.

  As illustrated in FIGS. 2A and 2B, the light emitting unit 10 d includes the semiconductor stacked body 10, the first light emitting unit electrode 14, and the second light emitting unit electrode 15.

  The semiconductor stacked body 10 includes a first semiconductor layer 11 of a first conductivity type, a second semiconductor layer 12 of a second conductivity type, and a light emitting layer provided between the first semiconductor layer 11 and the second semiconductor layer 12. 13 and so on. In the semiconductor stacked body 10, the second semiconductor layer 12 and the light emitting layer 13 are selectively removed, and a part of the first semiconductor layer 11 is exposed on the second main surface 10 a on the second semiconductor layer 12 side. .

  That is, the semiconductor stacked body 10 has a first main surface 10b and a second main surface 10a opposite to the first main surface 10b. The second semiconductor layer 12 is disposed on the second major surface 10a side, and the first semiconductor layer 11 is disposed on the first major surface 10b side.

  For example, the areas of the second semiconductor layer 12 and the light emitting layer 13 are smaller than the area of the first semiconductor layer 11, and a part of the first semiconductor layer 11 on the second major surface 10 a side is the second semiconductor layer 12. And it is not covered with the light emitting layer 13.

  The first conductivity type is, for example, n-type, and the second conductivity type is, for example, p-type. However, the embodiment is not limited to this, and the first conductivity type may be p-type and the second conductivity type may be n-type. In the following description, it is assumed that the first conductivity type is n-type and the second conductivity type is p-type. That is, the first semiconductor layer 11 is an n-type semiconductor layer. The second semiconductor layer 12 is a p-type semiconductor layer.

  For the first semiconductor layer 11, the second semiconductor layer 12, and the light emitting layer 13, for example, a nitride semiconductor can be used. The first semiconductor layer 11 is an n-type cladding layer containing, for example, GaN. The second semiconductor layer 12 is, for example, a p-type cladding layer. The light emitting layer 13 includes, for example, a quantum well layer and a barrier layer stacked on the quantum well layer. The light emitting layer 13 can have, for example, a single quantum well structure or a multiple quantum well structure.

Here, a direction from the second main surface 10a toward the first main surface 10b is defined as a Z-axis direction. That is, the Z-axis direction is a stacking direction of the first semiconductor layer 11, the light emitting layer 13, and the second semiconductor layer 12. One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.
In this specific example, the direction of the side of the semiconductor stacked body 10 along the direction from the first pillar portion 31a to the second pillar portion 31b described later is set in the X-axis direction.

  In the semiconductor stacked body 10, for example, a crystal serving as the first semiconductor layer 11, a crystal serving as the light emitting layer 13, and a crystal serving as the second semiconductor layer 12 are sequentially grown on a substrate such as sapphire, and thereafter In this region, part of the first semiconductor layer 11, the light emitting layer 13, and the second semiconductor layer 12 are removed.

  The first light emitting unit electrode 14 is electrically connected to the first semiconductor layer 11 on the second main surface 10a side. The second light emitting portion electrode 15 is electrically connected to the second semiconductor layer 12 on the second main surface 10a side.

  The first light emitting unit electrode 14 is, for example, an n-side electrode, and the second light emitting unit electrode 15 is, for example, a p-side electrode. In the light emitting unit 10 d, light (emitted light) is emitted from the light emitting layer 13 by supplying a current to the semiconductor stacked body 10 through the first light emitting unit electrode 14 and the second light emitting unit electrode 15.

  In this manner, the light emitting unit 10d includes the first main surface 10b, the second main surface 10a opposite to the first main surface 10b, the first light emitting unit electrode 14 provided on the second main surface 10a, and A second light emitting portion electrode 15.

  The first conductive unit 30 a is electrically connected to the first light emitting unit electrode 14. The first conductive portion 30a includes a first pillar portion 31a erected on the second main surface 10a. The second conductive part 30 b is electrically connected to the second light emitting part electrode 15. The second conductive portion 30b includes a second pillar portion 31b erected on the second main surface 10a.

  The sealing unit 50 covers the side surface of the first conductive unit 30a and the side surface of the second conductive unit 30b.

  The optical layer 60 is provided on the first main surface 10 b opposite to the second main surface 10 a of the semiconductor stacked body 10. The optical layer 60 includes a phosphor layer 61 (wavelength conversion unit). The phosphor layer 61 absorbs the emitted light emitted from the light emitting layer 13 and emits light having a wavelength different from the wavelength of the emitted light.

  As shown in FIGS. 1A and 1B, the semiconductor light emitting device 110 and the mounting substrate 250 are stacked along the Z-axis direction. The first conductive portion 30 a of the semiconductor light emitting device 110 faces the first substrate electrode 210 a of the mounting substrate 250. The second conductive portion 30 b of the semiconductor light emitting device 110 faces the second substrate electrode 210 b of the mounting substrate 250. The first conductive portion 30a and the first substrate electrode 210a facing each other are connected by the first connecting material 230a. Then, the second conductive portion 30b and the second substrate electrode 210b facing each other are connected by the second connecting material 230b.

  As the base 201 of the mounting substrate 250, for example, glass epoxy resin, phenol resin, glass cloth / glass nonwoven fabric epoxy resin, copper or aluminum metal base substrate, ceramic, or the like can be used. However, the embodiment is not limited to this, and any material can be used for the base 201.

  For example, copper, aluminum, silver, or the like can be used for the first substrate electrode 210a and the second substrate electrode 210b. The thickness of the first substrate electrode 210a and the second substrate electrode 210b can be, for example, not less than 10 micrometers (μm) and not more than 100 μm. However, the embodiment is not limited thereto, and materials used for the first substrate electrode 210a and the second substrate electrode 210b and their thicknesses are arbitrary.

  Further, in this specific example, the mounting substrate 250 exposes a portion of the first substrate electrode 210a that is connected to the first connection member 230a, and a portion of the second substrate electrode 210b that is connected to the second connection member 230b. An exposed mounting substrate insulating layer 220 is further included. For the mounting substrate insulating layer 220, for example, polyimide or the like is used. Note that the mounting substrate insulating layer 220 is provided as necessary, and may be omitted depending on the case.

  For the first connecting material 230a and the second connecting material 230b, for example, Sn—Ag—Cu-based lead-free solder can be used. However, the embodiment is not limited to this, and an arbitrary material is used for the first connecting material 230a and the second connecting material 230b.

  In the light source device 310, the areas of the first substrate electrode 210a and the second substrate electrode 210b are set large. Thereby, the light source device with high heat dissipation using the small semiconductor light emitting device can be provided.

For example, the area of the second substrate electrode 210b is 100 times or more the cross-sectional area of the second column portion 31b (cross-sectional area cut along a plane parallel to the second main surface 10a).
Furthermore, the area of the first substrate electrode 210a can be set to 100 times or more the cross-sectional area of the first column part 31a (cross-sectional area cut along a plane parallel to the second main surface 10a).

The area of the second substrate electrode 210b is 30 times or more the cross-sectional area of the light emitting unit 10d (cross-sectional area cut along a plane parallel to the second main surface 10a).
Furthermore, the area of the first substrate electrode 210a can be set to 30 times or more of the cross-sectional area of the light emitting unit 10d (cross-sectional area cut along a plane parallel to the second main surface 10a).

  The effect that heat dissipation can be improved by setting the areas of the first substrate electrode 210a and the second substrate electrode 210b to be large will be described later.

  In this specific example, the semiconductor light emitting device 110 further includes an insulating layer 20 provided between a part 12p on the second major surface 10a side of the second semiconductor layer 12 and the first pillar portion 31a. The first pillar portion 31 a covers a part 12 p of the second semiconductor layer 12 on the second main surface 10 a side through the insulating layer 20. In other words, the first pillar portion 31 a is spaced from the second semiconductor layer 12 and is erected on the second main surface 10 a while covering a part 12 p on the second main surface 10 a side of the second semiconductor layer 12. The first column part 31a includes at least a portion extending along the Z-axis direction, for example. The insulating layer 20 electrically isolates the second semiconductor layer 12 and the first pillar portion 31a.

  Note that the insulating layer 20 is not provided on at least a part of the first light emitting unit electrode 14 in order to realize electrical connection between the first conductive unit 30 a and the first light emitting unit electrode 14. The insulating layer 20 has, for example, a first opening 20o1, and electrical connection between the first conductive portion 30a and the first light emitting portion electrode 14 is performed in the first opening 20o1. The first opening 20o1 may include a hole that penetrates the insulating layer 20. However, the embodiment is not limited to this, and the first opening 20 o 1 is a part of the end of the insulating layer 20 that is recessed from the end of the first light emitting unit electrode 14 to expose the first light emitting unit electrode 14. It can be included for convenience. That is, the first opening 20o1 can include a portion of the insulating layer 20 that exposes at least a part of the first light-emitting portion electrode 14, and the shape thereof is arbitrary. The number of the first openings 20o1 is arbitrary.

  The second pillar portion 31b of the second conductive portion 30b includes at least a portion extending along the Z-axis direction.

  The insulating layer 20 further exposes at least a part of the second light emitting unit electrode 15. Thereby, the electrical connection between the second conductive portion 30b and the second light emitting portion electrode 15 is performed. That is, the insulating layer 20 has, for example, a second opening 20o2 on the second light emitting unit electrode 15 side, and the second opening 20o2 is electrically connected to the second conductive unit 30b and the second light emitting unit electrode 15. Connection is made. Also in this case, the second opening 20 o 2 includes a hole penetrating the insulating layer 20. In addition, the second opening 20o2 may conveniently include a portion that recedes from the end of the second light emitting unit electrode 15 and exposes the second light emitting unit electrode 15. That is, the second opening 20o2 can include a portion of the insulating layer 20 that exposes at least a part of the second light emitting unit electrode 15, and the shape thereof is arbitrary. The number of second openings 20o2 is arbitrary.

  The sealing part 50 exposes the first end face 31ae on the side opposite to the semiconductor stacked body 10 of the first conductive part 30a. Moreover, the sealing part 50 exposes the second end face 31be on the side opposite to the semiconductor stacked body 10 of the second conductive part 30b. The first end surface 31ae is an end surface on the side opposite to the semiconductor stacked body 10 of the first pillar portion 31a. Further, the second end face 31be is an end face on the side opposite to the semiconductor stacked body 10 of the second pillar portion 31b.

  In this specific example, the phosphor layer 61 includes, for example, a phosphor layer 61 including a phosphor, and a light transmitting portion 62 provided between the phosphor layer 61 and the semiconductor stacked body 10. The translucent part 62 has translucency with respect to the emitted light emitted from the light emitting layer 13. The light transmitting part 62 can have an action of changing the traveling direction of light, such as a lens action or a refraction action. Thereby, the radiation angle and color shift of the light generated in the light emitting layer 13 can be adjusted. The translucent part 62 is provided as necessary, and the translucent part 62 can be omitted depending on circumstances.

  The phosphor layer 61 includes, for example, a translucent resin and a phosphor dispersed in the resin. The phosphor absorbs the emitted light emitted from the light emitting layer 13 and emits light having a wavelength different from the wavelength of the emitted light. The phosphor layer 61 can include a plurality of types of phosphors. As the phosphor, for example, a phosphor that emits an arbitrary color such as a phosphor that emits yellow light, a phosphor that emits green light, and a phosphor that emits red light can be used. The phosphor layer 61 can also include a plurality of stacked layers including phosphors having different wavelengths.

  In the semiconductor light emitting device 110, a current is supplied to the semiconductor stacked body 10 via the first conductive portion 30a, the first light emitting portion electrode 14, the second conductive portion 30b, and the second light emitting portion electrode 15, thereby emitting light. Light (emitted light) is emitted from the layer 13. The emitted light can be, for example, light having a relatively short wavelength such as blue light, violet light, and ultraviolet light.

  For example, blue emission light emitted from the light emitting layer 13 travels inside the optical layer 60, and the wavelength is converted into, for example, yellow light by the phosphor layer 61. Then, for example, blue light emitted from the light emitting layer 13 and, for example, yellow light obtained from the phosphor layer 61 are combined. Thereby, the semiconductor light emitting device 110 can emit white light.

  The wavelength of the emitted light emitted from the light emitting layer 13 and the wavelength of the light converted by the phosphor layer 61 are arbitrary. Further, the color of light emitted from the semiconductor light emitting device 110 can be any color other than white.

  In this specific example, the light emitting unit 10 d further includes a protective layer 18 provided in a portion excluding the first light emitting unit electrode 14 and the second light emitting unit electrode 15 on the second main surface 10 a side of the semiconductor stacked body 10. The protective layer 18 covers the end portion of the semiconductor stacked body 10. An insulating material can be used for the protective layer 18. Thereby, the insulation between the 1st electrode 14 and the 2nd electrode 15 improves. The protective layer 18 can also cover the entire end of the semiconductor stacked body 10. Further, the protective layer 18 can cover a part of the end portion of the semiconductor stacked body 10. For example, silicon oxide can be used for the protective layer 18. However, the embodiment is not limited to this, and any insulating material can be used for the protective layer 18. Moreover, the protective layer 18 is provided as needed and may be omitted depending on circumstances.

  The second light emitting unit electrode 15 may have a laminated structure. For example, the second light emitting unit electrode 15 can include a conductive layer and a reflective layer (not shown) provided between the conductive layer and the second semiconductor layer 12. Thereby, the light emitted from the light emitting layer 13 and traveling toward the second main surface 10a is reflected by the reflecting layer, and the light can efficiently travel toward the optical layer 60.

  In the specific example, the first conductive portion 30a further includes a first connection portion 32a. The first connection part 32a covers at least a part of the insulating layer 20, and electrically connects the first light emitting part electrode 14 and the first column part 31a. The first connection portion 32a can include, for example, a portion extending along the XY plane.

  Further, the second conductive part 30b may further include a second connection part 32b. The second connection part 32b electrically connects the second light emitting part electrode 15 and the second column part 31b. The second connection part 32b can include, for example, a portion extending along the XY plane.

  For the first column part 31a, the first connection part 32a, the second column part 31b, and the second connection part 32b, for example, a metal such as Cu (copper), Ni (nickel), and Al (aluminum) is used. Can do. However, the embodiment is not limited to this, and materials used for the first column part 31a, the first connection part 32a, the second column part 31b, and the second connection part 32b are arbitrary.

  The sealing portion 50 covers the side surface of the first connection portion 32a, the side surface of the first column portion 31a, the side surface of the second connection portion 32b, and the side surface of the second column portion 31b. For the sealing portion 50, for example, a resin such as an epoxy resin can be used. Resin used for the sealing part 50 can contain fillers, such as a quartz filler and an alumina filler, for example. Thereby, the heat conductivity of the sealing part 50 can be raised, and thereby heat dissipation can be improved, the temperature rise of a semiconductor laminated body can be suppressed, and luminous efficiency can be improved.

  For the insulating layer 20, for example, a resin such as polyimide can be used.

  In the semiconductor light emitting device 110, a configuration in which the first pillar portion 31 a of the first conductive portion 30 a covers a part of the second semiconductor layer 12 through the insulating layer 20 is employed. Thereby, the area of the end surface (first end surface 31ae) opposite to the semiconductor stacked body 10 of the first pillar portion 31a is set larger than the area of the first light emitting portion electrode 14.

  When the semiconductor light emitting device 110 is downsized and its outer shape (particularly, the area of a plane parallel to the XY plane) is reduced, it is important to maintain good connectivity.

  For example, the area of the first light emitting unit electrode 14 connected to the first semiconductor layer 11 made of n-type semiconductor is set smaller than the area of the second light emitting unit electrode 15 connected to the second semiconductor layer 12 made of p type semiconductor. In the comparative example in which the area of the first end face 31ae of the first conductive part 30a connected to the first light emitting part electrode 14 is as small as the area of the first light emitting part electrode 14, the connectivity deteriorates. There is a case. For this reason, poor connection is likely to occur. In addition, the ease of deterioration of connectivity hinders the miniaturization of the semiconductor light emitting device 110.

  In the semiconductor light emitting device 110, the first pillar portion 31 a covers a part 12 p on the second major surface 10 a side of the second semiconductor layer 12 with the insulating layer 20 interposed therebetween. Thereby, the cross-sectional area of the first column part 31 a (the cross-sectional area when cut along the XY plane) can be made larger than the area of the first light-emitting part electrode 14. Thereby, even when the area of the 1st light emission part electrode 14 is small, the area of 1st end surface 31ae of the 1st pillar part 31a (1st electroconductive part 30a) connected to the 1st light emission part electrode 14 can be enlarged. Thereby, in the light source device 310, good connectivity between the first conductive portion 30a and the first substrate electrode 210a can be realized.

  The effect of such a configuration is particularly effective when the semiconductor light emitting device 110 is downsized and its outer shape (particularly, a plane parallel to the XY plane) is reduced. This is particularly effective when the area of the first light emitting unit electrode 14 is smaller than the area of the second light emitting unit electrode 15. That is, the semiconductor light emitting device 110 can be reduced in size by the configuration in which the first pillar portion 31a covers the portion 12p on the second main surface 10a side of the second semiconductor layer 12 with the insulating layer 20 interposed therebetween.

  The size of the surface parallel to the XY plane of the semiconductor light emitting device 110 may be the minimum size of the bottom surface electrode type electronic component. For example, the plane parallel to the XY plane of the semiconductor light emitting device 110 can be a rectangle of 600 μm × 300 μm. For example, the outer shape of the semiconductor light emitting device 110 can be a rectangular parallelepiped of, for example, 600 μm × 300 μm × 300 μm. Further, the plane parallel to the XY plane of the semiconductor light emitting device 110 can be a rectangle of 1000 μm × 500 μm. For example, the outer shape of the semiconductor light emitting device 110 can be a rectangular parallelepiped of, for example, 1000 μm × 500 μm × 500 μm. However, the embodiment is not limited to this, and the size and shape of the surface parallel to the XY plane of the semiconductor light emitting device 110 and the size and shape of the semiconductor light emitting device 110 are arbitrary.

  When the length of the side along the X-axis direction of the semiconductor light emitting device 110 is 600 μm and the length of the side along the Y-axis direction is 300 μm, when cutting along the XY plane of the first pillar portion 31a The cross section when cut along the X-Y plane of the second pillar portion 31b can be, for example, a rectangle of 200 μm × 150 μm.

  Thus, in the semiconductor light emitting device 110, the cross-sectional areas (the cross-sectional areas when cut along the XY plane) of the first column part 31a and the second column part 31b can be made relatively large.

  Thereby, the heat generated in the light emitting unit 10d can be efficiently transmitted toward the first substrate electrode 210a via the first column part 31a and the first connection member 230a. The heat generated in the light emitting unit 10d can be efficiently transmitted toward the second substrate electrode 210b via the second column part 31b and the second connecting member 230b. The heat transmitted to the first substrate electrode 210a and the second substrate electrode 210b is radiated by the first substrate electrode 210a and the second substrate electrode 210b.

  At this time, in the light source device 310 according to the present embodiment, the area of the second substrate electrode 210b is at least 100 times the cross-sectional area cut by a plane parallel to the second major surface 10a of the second column part 31b. High heat dissipation effect can be obtained by setting. Furthermore, the area of the first substrate electrode 210a may be set to 100 times or more of the cross-sectional area cut along a plane parallel to the second major surface 10a of the first column part 31a. For example, when the second light emitting unit electrode 15 (for example, the p-side electrode) to which the second column part 31b is connected is more likely to generate heat than the first light emitting unit electrode 14 (for example, the n-side electrode), the second substrate If the area of the electrode 210b is set to 100 times or more of the cross-sectional area of the second column part 31b and high heat dissipation is obtained, the area of the first substrate electrode 210a may be less than 100 times the cross-sectional area of the first column part 31a. good.

  Moreover, a high heat dissipation effect is obtained by setting the area of the second substrate electrode 210b to 30 times or more of the cross-sectional area cut by a plane parallel to the second main surface 10a of the light emitting unit 10d. You may set the area of the 1st board | substrate electrode 210a to 30 times or more of the cross-sectional area cut | disconnected by the plane parallel to the 2nd main surface 10a of the light emission part 10d. For example, when the second light emitting unit electrode 15 (for example, the p-side electrode) to which the second column part 31b is connected is more likely to generate heat than the first light emitting unit electrode 14 (for example, the n-side electrode), the second substrate The area of the first substrate electrode 210a may be less than 30 times the cross-sectional area of the light emitting unit 10d as long as the area of the electrode 210b is set to 30 times or more the cross-sectional area of the light emitting unit 10d to obtain a high heat dissipation effect.

  For example, the thermal conductivity of the first substrate electrode 210a and the second substrate electrode 210b is set to be higher than the thermal conductivity of the first connection material 230a and the second connection material 230b. In the light source device 310, the first substrate electrode 210a and the second substrate electrode 210b function as a heat dissipation unit.

  In the semiconductor light emitting device 110, since the size of the semiconductor light emitting device 110 is a small size that is substantially the same as the size of the light emitting unit 10d, the heat radiation path of the heat generated in the light emitting unit 10d is limited. In the semiconductor light emitting device 110, the temperature tends to increase locally in the vicinity of the first connecting material 230a and the second connecting material 230b. At this time, by increasing the areas of the first substrate electrode 210a and the second substrate electrode 210b having a high thermal conductivity and a heat dissipation function, a high heat dissipation effect can be obtained.

  On the other hand, for example, in a comparative example in which an LED chip is mounted on a lead frame and the electrode of the LED chip and the wiring electrode of the lead frame are connected by a wire, There is almost no effect of heat dissipation. For this reason, the wiring electrode to which the wire is connected has only a function of supplying current to the LED, and does not have a function of heat dissipation.

  In contrast, in the semiconductor light emitting device 110 according to the present embodiment, the cross-sectional areas of the first column portion 31a of the first conductive portion 30a and the second column portion 31b of the second conductive portion 30b connected to the light emitting portion 10d are different. Large (eg, significantly larger than the cross-sectional area of the wire). For this reason, the heat generated in the light emitting unit 10d is efficiently transmitted to the first substrate electrode 210a and the second substrate electrode 210b through the first column part 31a and the second column part 31b, respectively. Accordingly, in the light source device 310, the first substrate electrode 210a and the second substrate electrode 210b can have a function of heat dissipation in addition to a function of supplying current to the light emitting unit 10d.

FIG. 3A to FIG. 3C are schematic views illustrating the thermal characteristics of the light source device according to the embodiment.
That is, FIG. 3A is a graph illustrating the simulation result of the thermal characteristics in the light source device 310. FIG. 3C is a schematic plan view illustrating the simulation conditions, and FIG. 3B is a schematic cross-sectional view.

  In this simulation, the area of the first substrate electrode 210a and the second substrate electrode 210b (substrate electrode area Sa) is changed, the joint between the first substrate electrode 210a and the first connecting material 230a, and the second substrate electrode The temperature (joint part temperature Tj) of the joint part of 210b and the 2nd connection material 230b was simulated.

  Specifically, as shown in FIGS. 3B and 3C, the length L of the first substrate electrode 210a and the second substrate electrode 210b along the X-axis direction, and the first substrate electrode 210a. The length W of the second substrate electrode 210b along the Y-axis direction was changed. Here, the length W was 2/3 of the length L. And Cu shall be used for the 1st substrate electrode 210a and the 2nd substrate electrode 210b, and the thickness t2 was 100 micrometers.

  The thickness t1 of the base 201 of the mounting substrate 250 is 600 μm, and a Cu film (shown in the figure) having a thickness of 60 μm is formed on the entire back surface of the base 201 (the surface opposite to the first substrate electrode 210a and the second substrate electrode 210b). Not). This Cu film has an effect of improving the heat dissipation of the base 201. The semiconductor light emitting device 110 is 600 μm (X-axis direction) × 300 μm (Y-axis direction) × 300 μm (Z-axis direction). The cross-sectional area of the first column part 31a and the second column part 31b (the cross-sectional area when cut in a plane parallel to the second main surface 10a) was 200 μm × 150 μm. The thickness (length along the Z-axis direction) of the first column part 31a and the second column part 31b was about 60 μm. In this simulation, the temperature around the light source device 310 was set to 60 ° C.

The horizontal axis of the graph illustrated in FIG. 3A is the substrate electrode area Sa, and the vertical axis is the junction temperature Tj.
As shown in FIG. 3A, when the substrate electrode area Sa is small, the junction temperature Tj is high. As the substrate electrode area Sa increases, the junction temperature Tj decreases. This is because when the substrate electrode area Sa increases, the heat dissipation effect of the heat generated in the light emitting unit 10d in the first substrate electrode 210a and the second substrate electrode 210b increases.

When the substrate electrode area Sa is about 3 square millimeters (mm ² ) to about 4 mm ² , the value of the junction temperature Tj is substantially constant. That is, the substrate electrode area Sa is preferably 3 mm ² or more. Under the condition that the substrate electrode area Sa is smaller than 3 mm ² , the heat dissipation effect in the first substrate electrode 210a and the second substrate electrode 210b is being improved. When the substrate electrode area Sa is 3 mm ² or more, the heat dissipation effect is sufficiently exhibited.

In this simulation, the cross-sectional area of the first column part 31a and the second column part 31b (the cross-sectional area cut along a plane parallel to the second main surface 10a) is 0.03 mm ² at 200 μm × 150 μm. Therefore, when the area of the first substrate electrode 210a and the second substrate electrode 210b (substrate electrode area Sa) is 100 times or more the cross-sectional area of the first column part 31a and the second column part 31b, sufficient It can be said that the heat dissipation effect is exhibited.

  As already described, the second light emitting unit electrode 15 (for example, the p-side electrode) to which the second column part 31b is connected is more likely to generate heat than the first light emitting unit electrode 14 (for example, the n-side electrode). In this case, if the area of the second substrate electrode 210b is set to 100 times or more of the cross-sectional area of the second pillar portion 31b and high heat dissipation is obtained, the area of the first substrate electrode 210a is reduced by the breakage of the first pillar portion 31a. It may be less than 100 times the area.

In this simulation, the cross-sectional area of the semiconductor light emitting device 110 is 600 μm × 300 μm and 0.18 mm ² . From this, it is sufficient when the area of the first substrate electrode 210a and the area of the second substrate electrode 210b are 30 times or more of the cross-sectional area cut by a plane parallel to the second main surface 10a of the light emitting unit 10d. It can be said that a great heat dissipation effect is exhibited.

  As already described, the second light emitting unit electrode 15 (for example, the p-side electrode) to which the second column part 31b is connected is more likely to generate heat than the first light emitting unit electrode 14 (for example, the n-side electrode). In this case, if the area of the second substrate electrode 210b is set to 30 times or more of the cross-sectional area of the light emitting unit 10d to obtain a high heat dissipation effect, the area of the first substrate electrode 210a is 30 times the cross-sectional area of the light emitting unit 10d. Less than may be sufficient.

As shown in FIG. 3A, it is more desirable that the area of the first substrate electrode 210a and the area of the second substrate electrode 210b are 10 mm ² or more. When the substrate electrode area Sa is 10 mm ² or more, the junction temperature Tj is substantially constant, and the heat dissipation effect is more fully exhibited.

  That is, it is more desirable that the area of the second substrate electrode 210b is not less than 333 times the cross-sectional area of the second column part 31b. The area of the second substrate electrode 210b is more preferably 56 times or more the cross-sectional area cut along a plane parallel to the second major surface 10a of the light emitting unit 10d.

  Note that the vertical length and the horizontal length of the planar shape of the first substrate electrode 210a and the second substrate electrode 210b are desirably relatively close to each other. That is, for example, if the planar shape is a narrow band shape, the heat resistance in the length direction increases, so that the heat dissipation effect may not be sufficiently exhibited.

  The planar shape (the shape of the XY plane) of the first substrate electrode 210a and the second substrate electrode 210b is arbitrary such as a substantially rectangular shape (including a square), a substantially flat circle (including a circle), and a polygon. is there.

  In this specific example, one semiconductor light emitting device is provided in the combination of the first substrate electrode 210a and the second substrate electrode 210b, but the combination of the first substrate electrode 210a and the second substrate electrode 210b. A plurality of semiconductor light emitting devices may be provided.

  At this time, the area of the second substrate electrode 210b is 100, which is the total of the cross-sectional areas of the second pillar portions 31b of each of the plurality of semiconductor light emitting devices (cross-sectional areas cut along a plane parallel to the second main surface 10a). Set to more than double. The area of the second substrate electrode 210b is set to be 30 times or more the total of the plurality of light emitting section sectional areas (cross sectional areas cut along a plane parallel to the second major surface 10a). Thereby, a high heat dissipation effect is obtained.

Hereinafter, an example of the configuration of the semiconductor light emitting device 110 will be further described.
Hereinafter, an example of the configuration in the case where the side length along the X-axis direction of the semiconductor light emitting device 110 is 600 μm and the side length along the Y-axis direction is 300 μm will be described.

  The length of the side along the X-axis direction of the first semiconductor layer 11 can be set to 570 μm, for example. The length of the side along the Y-axis direction of the first semiconductor layer 11 can be set to 270 μm, for example.

  The length of the semiconductor light emitting device 110 along the X-axis direction (the direction from the first column part 31a to the second column part 31b) is the Y-axis direction (the direction from the first column part 31a to the second column part 31b). The length of the semiconductor light emitting device 110 can be set to be longer than the length of the semiconductor light emitting device 110 along the direction orthogonal to the direction from the second main surface 10a toward the first main surface 10b.

Further, the length of the first semiconductor layer 11 along the X-axis direction can be set longer than the length of the first semiconductor layer 11 along the Y-axis direction.
Thereby, when the first end surface 31ae and the second end surface 31be are arranged along the X-axis direction, the size of the first end surface 31ae and the size of the second end surface 31be can be set large. Thereby, the connectivity of an electrode can be improved more.

  For the phosphor layer 61, for example, a resin in which phosphor particles that absorb light and emit light having a wavelength longer than the wavelength of the light can be used. This phosphor absorbs, for example, at least one of blue light, violet light, and ultraviolet light, and emits light having a wavelength longer than that light. For example, a silicone resin is used as the resin mixed with the phosphor. The thickness of the phosphor layer 61 is, for example, 200 μm. As the silicone resin used for the phosphor layer 61, for example, methylphenyl silicone having a refractive index of about 1.5 can be used. However, the embodiment is not limited thereto, and the resin and the phosphor included in the phosphor layer 61 are arbitrary.

  As already described, the second light emitting unit electrode 15 can include a conductive layer and a reflective layer provided between the conductive layer and the second semiconductor layer 12. This reflective layer can contain, for example, at least one of Ag and Al. The thickness of the reflective layer can be set to 0.3 μm, for example. For example, the reflective layer can be provided in substantially the entire region of the second semiconductor layer 12 on the second main surface 10a side. Thereby, the emitted light emitted from the light emitting layer 13 can be efficiently reflected toward the first main surface 10b. However, the region where the reflective layer is provided is arbitrary. For example, the reflective layer may be provided in a partial region of the second semiconductor layer 12 on the second major surface 10a side.

  The second light emitting unit electrode 15 may further include a contact electrode layer provided between the reflective layer and the second semiconductor layer 12. The contact electrode layer can include, for example, an Au layer (gold layer) and a Ni layer (nickel layer) provided between the Au layer and the second semiconductor layer 12. Note that the thickness of the Ni layer can be 0.1 μm, and the thickness of the Au layer can be 0.1 μm.

The first light emitting unit electrode 14 can include, for example, an Au layer and a Ni layer provided between the Au layer and the first semiconductor layer 11. The thickness of the Au layer can be set to 0.1 μm, for example, and the thickness of the Ni layer can be set to 0.1 μm. For example, the first light emitting unit electrode 14 can be provided in substantially the entire region of the first semiconductor layer 11 on the second major surface 10a side. However, the region where the first light-emitting portion electrode 14 is provided is arbitrary, and the first light-emitting portion electrode 14 is provided on at least a part of the first semiconductor layer 11 on the second main surface 10a side.
The first light emitting unit electrode 14 may include a conductive layer and a reflective layer provided between the conductive layer and the first semiconductor layer 11. Thus, the 1st light emission part electrode 14 can have a laminated structure.

  The conductive layer of the second light emitting unit electrode 15 can include, for example, an Au layer and a Ni layer provided between the Au layer and the second semiconductor layer 12. The thickness of the Au layer can be set to 0.1 μm, for example, and the thickness of the Ni layer can be set to 0.1 μm. For example, the second light emitting unit electrode 15 can be provided in substantially the entire region of the second semiconductor layer 12 on the second main surface 10a side. However, the region where the second light emitting unit electrode 15 is provided is arbitrary, and the second light emitting unit electrode 15 is provided on at least a part of the second semiconductor layer 12 on the second main surface 10a side.

  For the first connection part 32a included in the first conductive part 30a, for example, a metal such as Cu is used. The first connection part 32a may include a first layer and a second layer. The first layer is provided between the second layer and the first light emitting unit electrode 14. That is, the first layer is in contact with the first light emitting unit electrode 14. The first layer is, for example, a seed layer, and the second layer is, for example, a plating layer. The area of the first layer can be equal to or less than the area of the first light emitting unit electrode 14. The area of the second layer can be, for example, 250 μm × 150 μm. The thickness of the first layer can be about 1 μm, for example. The thickness of the second layer can be set to 10 μm, for example.

  For example, a metal such as Cu is used for the second connection portion 32b included in the second conductive portion 30b. The second connection part 32b can include a third layer and a fourth layer. The third layer is provided between the fourth layer and the second light emitting unit electrode 15. That is, the third layer is in contact with the second light emitting unit electrode 15. The third layer is, for example, a seed layer, and the fourth layer is, for example, a plating layer. The third layer is the same layer as the first layer, and the same material as that used for the first layer can be used for the third layer. The fourth layer is the same layer as the second layer, and the same material as that used for the second layer can be used for the fourth layer. The area of the third layer can be equal to or less than the area of the second light emitting unit electrode 15. The area of the fourth layer can be, for example, 250 μm × 350 μm. The thickness of the third layer can be about 1 μm, for example. The thickness of the fourth layer can be set to 10 μm, for example.

  However, the area, shape, and thickness of the first to fourth layers are arbitrary. Further, the first connection portion 32a and the second connection portion 32b may be a single-layer thin film, or may be a laminated film as described above. The first connection portion 32a may further include another layer stacked on the first layer and the second layer. Further, the second connection portion 32b may further include other layers stacked on the third layer and the fourth layer.

  For example, a metal such as Cu can be used for the first column portion 31a. The cross section of the first pillar portion 31a when cut along the XY plane is, for example, 200 μm × 150 μm. The thickness (length along the Z-axis direction) of the first pillar portion 31a is, for example, about 60 μm. The 1st light emission part electrode 14 and the 1st pillar part 31a are electrically connected by the 1st connection part 32a.

  For the second pillar portion 31b, for example, a metal such as Cu can be used. The cross section of the second pillar portion 31b when cut along the XY plane is, for example, 200 μm × 150 μm. The thickness (length along the Z-axis direction) of the second column part 31b is, for example, about 60 μm. The 2nd light emission part electrode 15 and the 2nd pillar part 31b are electrically connected by the 2nd connection part 32b.

  The material, cross-sectional shape, cross-sectional area, and thickness used for the first column part 31a and the second column part 31b are not limited to the above and are arbitrary.

  For the sealing portion 50, for example, a thermosetting resin can be used. The thickness of the sealing part 50 is approximately the same as the thickness of the first pillar part 31a and the second pillar part 31b, and is, for example, approximately 60 μm. The sealing part 50 exposes the first end face 31ae of the first conductive part 30a and the second end face 31be of the second conductive part 30b, while the side face of the first conductive part 30a (the side face of the first column part 31a and the side face). The side surface of the first connection portion 32a) and the side surface of the second conductive portion 30b (the side surface of the second column portion 31b and the side surface of the second connection portion 32b) are covered. The sealing part 50 can further cover the surfaces of the first connection part 32a and the second connection part 32b opposite to the semiconductor stacked body 10. Furthermore, the sealing unit 50 can cover the entire second main surface 10a side of the semiconductor stacked body 10.

Hereinafter, an example of a method for manufacturing the semiconductor light emitting device 110 will be described.
4A to FIG. 4E, FIG. 5A to FIG. 5E, and FIG. 6A to FIG. 6E are semiconductor light emitting devices used in the light source device according to the embodiment. FIG. 5 is a schematic cross-sectional view in order of the processes, illustrating the method for manufacturing the device.
That is, these drawings are cross-sectional views corresponding to the cross section taken along the line AA ′ of FIG. However, it is drawn upside down.
This manufacturing method is a method for manufacturing a plurality of semiconductor light emitting devices 110 at a wafer level.

  As shown in FIG. 4A, the substrate 10s on which the semiconductor stacked body 10 is formed is used. For example, a sapphire substrate is used as the substrate 10s. The size of the substrate 10s is, for example, 4 inches in diameter, and the thickness of the substrate 10s is, for example, about 500 μm. In addition, the formation method of the semiconductor laminated body 10 is the following, for example. That is, a nitride semiconductor crystal film serving as the first semiconductor layer 11, a crystal film serving as the light emitting layer 13, and a crystal film serving as the second semiconductor layer 12 are epitaxially grown on the substrate 10s, and these crystal films are epitaxially grown. However, it is etched by, for example, RIE (Reactive Ion Etching), and a part of the first semiconductor layer 11 is exposed on the second main surface 10a side. Further, these crystal films are processed and individualized by, for example, RIE processing, and a plurality of semiconductor stacked bodies 10 are formed.

  Next, as illustrated in FIG. 4B, a film that becomes the first light-emitting portion electrode 14 and the second light-emitting portion electrode 15 is formed on the second main surface 10 a of the semiconductor stacked body 10 to have a predetermined shape. This film is processed to form the first light emitting unit electrode 14 and the second light emitting unit electrode 15. Further, the protective layer 18 is formed. In FIG. 2B, the protective layer 18 is not shown in order to avoid complexity.

  Specifically, for example, a film to be a contact electrode layer is formed on the second main surface 10 a of the semiconductor stacked body 10. That is, a Ni film having a thickness of 0.1 μm is formed, and an Au film having a thickness of 0.1 μm is formed thereon. Thereby, a film to be a contact electrode layer is formed. For example, sputtering can be used to form the Ni film and the Au film. Furthermore, a layer to be a reflective layer is formed on the Au film. That is, as the reflective layer, a film containing at least one of Ag and Al, for example, having a thickness of 0.3 μm is formed. Also in this case, a sputtering method can be used. Thereby, a film to be a reflective layer is formed.

  Further, a conductive film to be a conductive layer of the first light emitting unit electrode 14 and the second light emitting unit electrode 15 is formed on the film to be the reflective layer. That is, for example, a 0.1 μm Ni film is formed on a film to be a reflective layer, and an Au film having a thickness of 0.1 μm is formed thereon. For example, a sputtering method can be used to form the Ni film and the Au film.

  The film to be the contact electrode layer, the film to be the reflective layer, the first light emitting part electrode 14 and the second light emitting part electrode 15 are processed into a predetermined shape. Thereby, the 1st light emission part electrode 14 and the 2nd light emission part electrode 15 are formed. In addition, arbitrary methods, such as a lift-off method, can be used for the processing of each film described above. The contact electrode layer, the reflective layer, and the conductive layer of the first light emitting unit electrode 14 may have different pattern shapes. In addition, the contact electrode layer, the reflective layer, and the conductive layer of the second light emitting unit electrode 15 may have different pattern shapes.

Further, the protective layer 18 is formed in a region excluding at least a part of the first light emitting unit electrode 14 and a region excluding at least a part of the second light emitting unit electrode 15, for example, SiO ₂ having a thickness of 0.3 μm. The film is formed by, for example, the CVD method, and processed by, for example, dry etching or wet etching to form the protective layer 18.

  Next, as illustrated in FIG. 4C, the insulating layer 20 that covers a part 12 p of the second semiconductor layer 12 on the second main surface 10 a side is formed. The insulating layer 20 is formed in a region excluding at least a part of the first light emitting unit electrode 14 and a region excluding at least a part of the second light emitting unit electrode 15. In this specific example, the insulating layer 20 is also provided between the plurality of semiconductor stacked bodies 10.

  For example, polyimide or PBO (polybenzoxazole) is used for the insulating layer 20. That is, for example, a polyimide film to be the insulating layer 20 is formed on the entire surface of the second main surface 10a of the semiconductor stacked body 10, and the insulating layer is selectively formed by, for example, performing exposure using a mask and development. 20 is formed. The processed insulating layer 20 is baked as necessary.

  Thereafter, a conductive film that forms at least a part of the first conductive part 30a is formed on the insulating layer 20 that covers the part 12p of the second semiconductor layer 12 on the second major surface 10a side. This conductive film can also be at least part of the second conductive portion 30b. Further, the conductive film covers at least a part of the first light emitting unit electrode 14 not covered with the insulating layer 20 and at least a part of the second light emitting unit electrode 15 not covered with the insulating layer 20. Can be formed. Specifically, the following processing is performed.

  That is, as shown in FIG. 4D, for example, the first layer of the first connection portion 32a and the third layer of the second connection portion 32b are formed on the entire surface of the substrate 10s on the second main surface 10a side. A seed layer 33 is formed. The seed layer 33 is formed by, for example, a physical deposition method such as an evaporation method or a sputtering method. The seed layer 33 functions as a power feeding layer in a plating process described later. For the seed layer 33, for example, a laminated film of a Ti film and a Cu film can be used. The Ti layer of the seed layer 33 can increase the adhesion strength between the Cu film and the resist or pad (the first light emitting unit electrode 14 and the second light emitting unit electrode 15). The thickness of the Ti layer is, for example, about 0.2 μm. On the other hand, the Cu film of the seed layer 33 mainly contributes to power feeding. The thickness of the Cu film is preferably 0.2 μm or more.

  Next, as shown in FIG. 4E, the first resist layer 37 is formed in a region other than the region corresponding to the first connection portion 32a and the region corresponding to the second connection portion 32b. For the first resist layer 37, for example, a photosensitive liquid resist or a dry film resist can be used. The first resist layer 37 is formed by first forming a film to be the first resist layer 37 and then performing exposure using a light-shielding mask having a predetermined opening and development. Note that the first resist layer 37 is baked as necessary.

  Next, as shown in FIG. 5A, in the region where the first resist layer 37 is not provided, the second layer of the first connection portion 32a and the fourth layer of the second connection portion 32b, A connecting portion conductive film 32f is formed. The connection portion conductive film 32f is formed by, for example, an electroplating method. In the electroplating method, for example, the substrate 10s provided with the workpiece is immersed in a plating solution composed of copper sulfate and sulfuric acid, the seed layer 33 and the negative electrode of the DC power source are connected, and the substrate 10s. A Cu plate serving as an anode placed so as to face the surface to be plated is connected to an anode of a DC power source. Then, a current is passed between the negative electrode and the anode to perform Cu plating. In the plating process, the thickness of the plating film increases with the passage of time, and when the thickness of the plating film reaches the required thickness, the energization is stopped and the plating is completed. As a result, a connection portion conductive film 32 f made of a plating film is formed in the opening of the first resist layer 37.

  A seed layer 33 (first layer) at a position corresponding to the first light emitting section electrode 14 and a connection section conductive film 32f (second layer) at a position corresponding to the first light emitting section electrode 14 are the first connecting section 32a. It becomes. The seed layer 33 (third layer) at a position corresponding to the second light emitting portion electrode 15 and the connection portion conductive film 32f (fourth layer) at a position corresponding to the second light emitting portion electrode 15 are the second connection portion 32b. It becomes.

  The first connection portion 32a is formed on the conductive layer that is formed on the insulating layer 20 covering the portion 12p on the second main surface 10a side of the second semiconductor layer 12 and serves as at least a portion of the first conductive portion 30a. Equivalent to. In this specific example, the seed layer 33 and the connection part conductive film 32f that become the conductive film also become a conductive film that becomes at least a part of the second conductive part 30b. Further, the seed layer 33 and the connection portion conductive film 32 f that become the conductive film are formed by at least a part of the first light emitting unit electrode 14 not covered with the insulating layer 20 and the second light emitting unit not covered with the insulating layer 20. It is formed so as to cover at least a part of the electrode 15.

  Thereafter, the first connection portion 32a (the conductive layer serving as at least a portion of the first conductive portion 30a formed on the insulating layer 20 covering the portion 12p on the second main surface 10a side of the second semiconductor layer 12). The first pillar portion 31a is formed on the film. Specifically, for example, the following processing is performed.

  As shown in FIG. 5B, the second resist layer 38 is formed in a region other than the region corresponding to the first column portion 31a and the region corresponding to the second column portion 31b. For the formation of the material used for the second resist layer 38 and the second resist layer 38, the materials and methods described with respect to the first resist layer 37 can be employed.

  Next, as illustrated in FIG. 5C, a columnar conductive film 31 f to be the first columnar portion 31 a and the second columnar portion 31 b is formed in a region where the second resist layer 38 is not provided. The columnar conductive film 31f is also formed by, for example, an electroplating method. For the formation of the columnar conductive film 31f, the materials and methods described with respect to the formation of the connection conductive film 32f can be applied. The columnar conductive film 31f connected to the first connection part 32a becomes the first columnar part 31a, and the columnar conductive film 31f connected to the second connection part 32b becomes the second columnar part 31b.

  Next, as shown in FIG. 5D, the first resist layer 37 and the second resist layer 38 are removed. Further, the exposed seed layer 33 is removed by acid cleaning, for example. The seed layer 33 covered with the connection portion conductive film 32f remains as the first layer and the third layer, and is included in the first connection portion 32a and the second connection portion 32b, respectively.

  Next, as illustrated in FIG. 5E, a resin layer 50 f serving as the sealing portion 50 is formed on the surface of the substrate 10 s on the second main surface 10 a side. For the resin layer 50f, for example, a thermosetting resin can be used. For example, a film that becomes the resin layer 50f is formed on the surface of the substrate 10s on the second main surface 10a side by a thickness such that the first column portion 31a and the second column portion 31b are buried by a technique such as printing. The resin layer 50f is formed by heating and curing. The heating condition for curing the resin layer 50f is, for example, about 150 ° C. and about 2 hours.

  Next, as illustrated in FIG. 6A, the surface of the resin layer 50 f is ground to expose the first column portion 31 a and the second column portion 31 b. Thereby, the sealing part 50 is formed. In this grinding, along with the grinding of the resin layer 50f, a part of the first pillar part 31a and a part of the second pillar part 31b can be ground, whereby the first pillar part 31a can be ground. The first end surface 31ae and the second end surface 31be of the second pillar portion 31b are arranged in a plane including a surface on the side opposite to the second main surface 10a of the sealing portion 50.

  For the above grinding, for example, a rotary polishing wheel can be used. By rotational grinding, grinding can be performed while ensuring flatness. In addition, after grinding, drying is performed as necessary.

  Next, as illustrated in FIG. 6B, the substrate 10 s is removed from the semiconductor stacked body 10. That is, for example, a layer (for example, a GaN layer) included in the semiconductor stacked body 10 is irradiated with laser light from the surface of the substrate 10s opposite to the semiconductor stacked body 10 through the substrate 10s, and at least one of the layers is irradiated. The substrate 10s is separated from the semiconductor stacked body 10 by disassembling the part. As this laser beam, for example, a laser beam having a wavelength shorter than the forbidden bandwidth wavelength based on the forbidden bandwidth of GaN can be used. For example, a Nd: YAG triple harmonic laser can be used. However, the laser beam used is arbitrary.

  Next, as illustrated in FIG. 6C, in this specific example, a light transmitting portion 62 that is a part of the optical layer 60 is formed on the first main surface 10 b of the semiconductor stacked body 10. That is, for example, a liquid transparent resin layer is applied to the first main surface 10b of the semiconductor laminate 10 by printing or the like, a mold having a predetermined shape is pressed against the transparent resin layer, and the transparent resin layer is formed into a predetermined shape. After the deformation, the mold is released, and if necessary, at least one of heating and ultraviolet irradiation is applied and cured to form the light transmitting part 62. By adopting this method, the translucent part 62 having an arbitrary shape can be easily formed by using a mold having a desired shape.

  Next, as shown in FIG. 6D, a phosphor film 61 f that becomes the phosphor layer 61 is formed so as to cover the light transmitting portion 62. For example, the phosphor film 61f is formed by applying a resin material in which phosphor particles and a silicone resin are mixed by spin coating or printing so as to cover the light transmitting portion 62, and then heat-curing the resin material. Formed. As this resin material, for example, a material that is cured by heating at 150 ° C. for 1 hour is used.

  Then, as illustrated in FIG. 6E, the resin layer 50 f serving as the sealing portion 50 and the phosphor film 61 f serving as the phosphor layer 61 are cut to separate each of the plurality of semiconductor stacked bodies 10. . Thereby, the several semiconductor light-emitting device 110 can be manufactured collectively. For the above cutting, for example, a dicing method using a dicer can be employed.

  In the above manufacturing method, the electrodes, the sealing portion, and the optical layer can be formed collectively at the wafer level, and the productivity is high. In addition, inspection at the wafer level is also possible. Thereby, a semiconductor light emitting device can be manufactured with high productivity. Further, since members such as a lead frame, a conductive substrate, and a bonding wire are not required, the size can be easily reduced. Also, the cost can be reduced.

  Note that in the step of separating the substrate 10s from the semiconductor stacked body 10 described with reference to FIG. 6B, a high temperature may be applied to the film to be the insulating layer 20 in some cases. That is, when the semiconductor laminate 10 is irradiated with laser light from the surface of the substrate 10s opposite to the semiconductor laminate 10 through the substrate 10s, the film that becomes the insulating layer 20 may be heated. In order to suppress deterioration of the film to be the insulating layer 20 due to heating at this time, it is desirable to use a material having high heat resistance for the film to be the insulating layer 20.

  For example, it is more desirable to use a resin having higher heat resistance than the resin used for the sealing portion 50 for the insulating layer 20. That is, it is more desirable that the thermal decomposition temperature of the insulating layer 20 is higher than the thermal decomposition temperature of the sealing portion 50. For example, polyimide having a thermal decomposition temperature of about 380 ° C. or higher can be used for the insulating layer 20, and an epoxy resin having a thermal decomposition temperature of about 280 ° C. or higher and about 300 ° C. or lower is used for the sealing portion 50, for example. Can do. As the thermal decomposition temperature, for example, a temperature at which the weight is reduced by heating at a constant rate (for example, 5 percent) can be adopted.

  In the case where the film that becomes the insulating layer 20 contains a filler, a defect caused by the filler may occur due to the high temperature applied to the film that becomes the insulating layer 20. In order to suppress this defect, it is desirable that the filler content included in the insulating layer 20 is set lower than the filler content included in the sealing portion 50. For example, the insulating layer 20 can be made of polyimide that does not substantially contain a filler.

Next, an example of a method for manufacturing the mounting substrate 250 will be described.
FIG. 7A to FIG. 7C are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the mounting board used in the light source device according to the embodiment.
That is, these drawings are cross-sectional views corresponding to the cross section taken along the line AA ′ of FIG.

  As shown in FIG. 7A, the substrate electrode conductive layer 210f to be the first substrate electrode 210a and the second substrate electrode 210b is formed on the surface of the base 201. For example, a copper foil is used for the substrate electrode conductive layer 210f. That is, for example, a copper foil is attached to the surface of the base body 201.

  Next, as shown in FIG. 7B, the substrate electrode conductive layer 210f is patterned to form the first substrate electrode 210a and the second substrate electrode 210b. That is, for example, a photoresist film is formed on the substrate electrode conductive layer 210f, the photoresist film is developed and patterned, and the substrate electrode conductive layer 210f is etched using the patterned photoresist film as a mask. . Then, the photoresist film is removed by, for example, an ashing method.

Next, as shown in FIG. 7C, an insulating material that becomes the mounting substrate insulating layer 220 is formed on the base body 201 and the first substrate electrode 210a and the second substrate electrode 210b by, for example, spin coating or the like. Is applied and processed into a predetermined shape. As a result, the mounting substrate insulating layer 220 that exposes the portion of the second substrate electrode 210b that is connected to the second connecting material 230b while exposing the portion of the first substrate electrode 210a that is connected to the first connecting material 230a is formed. Is done.
Thereby, the mounting substrate 250 is manufactured.

Next, an example of a method for manufacturing the light source device 310 will be described.
FIG. 8A and FIG. 8B are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the light source device according to the embodiment.
That is, these drawings are cross-sectional views corresponding to the cross section taken along the line AA ′ of FIG.

As shown in FIG. 8A, the first connecting material 230a and the second connecting material 230b are formed on the first substrate electrode 210a and the second substrate electrode 210b, respectively.
That is, the solder material used as the 1st connection material 230a and the 2nd connection material 230b is arrange | positioned on the 1st board | substrate electrode 210a and the 2nd board | substrate electrode 210b by the screen printing method which used the metal mask, for example.

Then, as illustrated in FIG. 8B, the semiconductor light emitting device 110 is mounted on the mounting substrate 250 by a mounter. At this time, the first conductive portion 30a and the first connecting material 230a are opposed to each other, and the second conductive portion 30b and the second connecting material 230b are opposed to each other. In this state, the first connecting material 230a and the second connecting material 230b are melted and solidified. Accordingly, the first conductive portion 30a and the first substrate electrode 210a are joined by the first connecting material 230a, and the second conductive portion 30b and the second substrate electrode 210b are joined by the second connecting material 230b.
Thereby, the light source device 310 is manufactured.

FIG. 9A to FIG. 9C and FIG. 10A to FIG. 10C are schematic cross-sectional views illustrating the configuration of another semiconductor light emitting device used in the light source device according to the embodiment. It is.
That is, these drawings are cross-sectional views corresponding to the cross section taken along the line AA ′ of FIG.

  As shown in FIG. 9A, in another semiconductor light emitting device 110a according to this embodiment, the translucent portion 62 has a convex lens shape.

Furthermore, the thickness of the translucent part 62 may be constant. That is, the translucent part 62 can have a function of suppressing temperature rise of the semiconductor stacked body 10 in addition to a lens function. That is, in the phosphor layer 61, a part of energy is absorbed and heat is generated at the time of wavelength conversion. However, by providing the light transmitting part 62 between the phosphor layer 61 and the semiconductor stacked body 10, 61 can be separated from the semiconductor stacked body 10, and an increase in the temperature of the semiconductor stacked body 10 can be suppressed.
Thus, the shape of the translucent part 62 is arbitrary.

  As shown in FIG. 9B, in another semiconductor light emitting device 110b, the optical layer 60 is provided with the phosphor layer 61, but the light transmitting portion 62 is not provided. Thus, the translucent part 62 is provided as needed.

  As shown in FIG. 9C, in another semiconductor light emitting device 110 c according to the present embodiment, the optical layer 60 includes a phosphor layer 61 including a phosphor, and the semiconductor laminate 10 of the phosphor layer 61. Has a hard film 63 provided on the opposite side. The hard film 63 has a hardness higher than that of the phosphor layer 61. The hard film 63 has translucency. For the hard film 63, for example, a silicone resin having high hardness can be used. For the formation of the hard film 63, for example, a spin coating method or a printing method can be employed. For the hard film 63, for example, silicon nitride or silicon oxide can be used. In this case, the hard film 63 is formed by a method such as sputtering. However, the material and forming method of the hard film 63 are arbitrary.

  By providing the hard film 63, a high hardness can be obtained on the light emitting surface of the semiconductor light emitting device 110c (the surface on the optical layer 60 side), so that the semiconductor light emitting device 110c can be handled easily, for example.

  For example, when the hardness of the silicone resin used for the phosphor layer 61 is low, if the phosphor layer 61 is exposed on the outermost surface of the optical layer 60 (the surface farthest from the semiconductor laminate 10), for example, a semiconductor When the light emitting device is picked up by a collet, the phosphor layer 61 may be in close contact with the collet and it may be difficult to perform proper mounting. At this time, by providing the hard film 63 having a hardness higher than that of the phosphor layer 61 on the phosphor layer 61, it becomes easier to implement good mounting.

  As shown in FIGS. 10A, 10B, and 10C, in the other semiconductor light emitting devices 110d, 110e, and 110f according to the present embodiment, the first connection portion 32a and the second connection are provided. The part 32b is not provided. Also in this case, the insulating layer 20 is provided between the first pillar portion 31a and the second semiconductor layer 12, and a part of the first pillar portion 31a is interposed between the second semiconductor layer via the insulating layer 20. 12 is opposed to a part. Thereby, the area of the first end face 31ae of the first conductive part 30a can be made larger than the area of the first light emitting part electrode 14. The semiconductor light emitting devices 110d, 110e, and 110f can also maintain a high electrode connectivity and provide a semiconductor light emitting device suitable for miniaturization.

  In the semiconductor light emitting device 110d illustrated in FIG. 10A, the light transmitting portion 62 has a convex lens shape. However, like the semiconductor light emitting device 110, the light transmitting portion 62 has a concave lens shape. It is good also as a shape. Further, the thickness of the translucent portion 62 may be constant.

  In addition, the semiconductor light emitting device 110e illustrated in FIG. 10B is an example in which the light transmitting portion 62 is omitted, and the semiconductor light emitting device 110f illustrated in FIG. 10C has been described with reference to FIG. In this example, a hard film 63 is provided.

FIG. 11 is a schematic cross-sectional view illustrating the configuration of another light source device according to the embodiment.
That is, the drawing is a cross-sectional view corresponding to a cross section taken along line AA ′ of FIG.
As shown in FIG. 11, in another light source device 311 according to this embodiment, the base 201 of the mounting substrate 250 includes an insulating substrate portion 202 and a metal substrate portion 203.

A first substrate electrode 210 a and a second substrate electrode 210 b are provided on the insulating substrate portion 202.
The metal substrate unit 203 is stacked on the insulating substrate unit 202 on the opposite side of the insulating substrate unit 202 from the first substrate electrode 210a and the second substrate electrode 210b.

  By providing the highly conductive metal substrate portion 203 on the back surface of the insulating substrate portion 202 of the base body 201, heat spread in the base body 201 is promoted and heat dissipation is further improved.

Examples of the red phosphor include the following. However, the red phosphor used in the embodiment is not limited to this.
Y ₂ O ₂ S: Eu,
Y ₂ O ₂ S: Eu + pigment,
Y ₂ O ₃ : Eu,
Zn ₃ (PO ₄ ) ₂ : Mn,
(Zn, Cd) S: Ag + In ₂ O ₃ ,
(Y, Gd, Eu) BO ₃ ,
(Y, Gd, Eu) ₂ O ₃ ,
YVO ₄ : Eu,
La ₂ O ₂ S: Eu, Sm,
LaSi ₃ N ₅ : Eu ²⁺ ,
α-sialon: Eu ²⁺ ,
CaAlSiN ₃ : Eu ²⁺ ,
CaSiN _X : Eu ²⁺ ,
CaSiN _X : Ce ²⁺ ,
M ₂ Si ₅ N ₈ : Eu ²⁺ ,
CaAlSiN ₃ : Eu ²⁺ ,
(SrCa) AlSiN ₃ : Eu ^{X +} ,
_{Sr x (Si y Al 3)} z (O x N): Eu X +.

Examples of the green phosphor include the following. However, the green phosphor used in the embodiment is not limited to this.
ZnS: Cu, Al,
ZnS: Cu, Al + pigment,
(Zn, Cd) S: Cu, Al,
ZnS: Cu, Au, Al, + pigment,
Y ₃ Al ₅ O ₁₂ : Tb,
Y ₃ (Al, Ga) ₅ O ₁₂ : Tb,
Y ₂ SiO ₅ : Tb,
Zn ₂ SiO ₄ : Mn,
(Zn, Cd) S: Cu,
ZnS: Cu,
Zn ₂ SiO ₄ : Mn,
ZnS: Cu + Zn ₂ SiO ₄ : Mn,
Gd ₂ O ₂ S: Tb,
(Zn, Cd) S: Ag,
ZnS: Cu, Al,
Y ₂ O ₂ S: Tb,
ZnS: Cu, Al + In ₂ O ₃ ,
(Zn, Cd) S: Ag + In ₂ O ₃ ,
(Zn, Mn) ₂ SiO ₄ ,
BaAl ₁₂ O ₁₉ : Mn
(Ba, Sr, Mg) O.aAl ₂ O ₃ : Mn,
LaPO ₄ : Ce, Tb,
Zn ₂ SiO ₄ : Mn,
ZnS: Cu,
3 (Ba, Mg, Eu, Mn) O.8Al ₂ O ₃ ,
_{La 2 O 3 · 0.2SiO 2 ·} 0.9P 2 O 5: Ce, Tb,
CeMgAl ₁₁ O ₁₉ : Tb,
CaSc ₂ O ₄ : Ce,
(BrSr) SiO ₄ : Eu,
α-sialon: Yb ²⁺ ,
β-sialon: Eu ²⁺ ,
(SrBa) YSi ₄ N ₇ : Eu ²⁺ ,
(CaSr) Si ₂ O ₄ N ₇ : Eu ²⁺ ,
Sr (SiAl) (ON): Ce.

Examples of the blue phosphor include the following. However, the blue phosphor used in the embodiment is not limited to this.
ZnS: Ag,
ZnS: Ag + pigment,
ZnS: Ag, Al,
ZnS: Ag, Cu, Ga, Cl,
ZnS: Ag + In ₂ O ₃ ,
ZnS: Zn + In ₂ O ₃ ,
(Ba, Eu) MgAl ₁₀ O ₁₇ ,
(Sr, Ca, Ba, Mg) ₁₀ (PO ₄ ) 6 Cl ₂ : Eu,
Sr ₁₀ (PO ₄ ) 6Cl ₂ : Eu,
(Ba, Sr, Eu) (Mg, Mn) Al ₁₀ O ₁₇ ,
10 (Sr, Ca, Ba, Eu) · 6PO ₄ · Cl ₂ ,
_{BaMg 2 Al 16 O 25: Eu} .

Examples of the yellow phosphor include the following. However, the yellow phosphor used in the embodiment is not limited to this.
Li (Eu, Sm) W ₂ O ₈ ,
(Y, Gd) ₃ , (Al, Ga) ₅ O ₁₂ : Ce ³⁺ ,
Li ₂ SrSiO ₄ : Eu ²⁺ ,
(Sr (Ca, Ba)) ₃ SiO ₅ : Eu ²⁺ ,
SrSi ₂ ON _2.7 : Eu ²⁺ .

In this specification, “nitride semiconductor” means B _x In _y Al _z Ga _1-xyz N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ z ≦ 1, x + y + z ≦ 1) Semiconductors having all compositions in which the composition ratios x, y, and z are changed within the respective ranges are included. Furthermore, in the above chemical formula, those that further include a group V element other than N (nitrogen), and those that further include any of various dopants added to control the conductivity type, etc. Shall be included.

  As described above, according to the embodiment, it is possible to provide a light source device with high heat dissipation using a small semiconductor light emitting device.

  In the present specification, “vertical” and “parallel” include not only strictly vertical and strictly parallel, but also include, for example, variations in the manufacturing process, and may be substantially vertical and substantially parallel. is good.

The embodiments of the present invention have been described above with reference to specific examples. However, the embodiments of the present invention are not limited to these specific examples. For example, a semiconductor layer, a light emitting layer, a substrate electrode, a conductive layer, a reflective layer, and a contact electrode layer included in the light emitting portion, and a conductive portion, a column portion, a connection portion, an insulating layer, a sealing portion, included in the semiconductor light emitting device, Those skilled in the art know the specific configuration of each element such as a sealing layer, an optical layer, a wavelength conversion unit, a phosphor layer, a phosphor, a translucent portion and a hard film, a substrate and a substrate electrode included in the mounting substrate. As long as the present invention can be carried out in the same manner and the same effects can be obtained by appropriately selecting from these ranges, they are included in the scope of the present invention.
Moreover, what combined any two or more elements of each specific example in the technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.

  In addition, all light source devices that can be implemented by a person skilled in the art based on the above-described light source device as an embodiment of the present invention also include the gist of the embodiment of the present invention. Belongs to the range.

  In addition, in the category of the idea of the present invention, those skilled in the art can conceive of various changes and modifications, and it is understood that these changes and modifications also belong to the scope of the present invention. .

  DESCRIPTION OF SYMBOLS 10 ... Semiconductor laminated body, 10a ... 2nd main surface, 10b ... 1st main surface, 10d ... Light-emitting part, 10s ... Substrate, 11 ... 1st semiconductor layer, 12 ... 2nd semiconductor layer, 12p ... Some, 13 ... Light emitting layer, 14 ... first light emitting part electrode, 15 ... second light emitting part electrode, 18 ... protective layer, 20 ... insulating layer, 20o1, 20o2 ... first and second openings, 30a ... first conductive part, 30b ... 2nd electroconductive part, 31a ... 1st pillar part, 31ae ... 1st end surface, 31b ... 2nd pillar part, 31be ... 2nd end surface, 31f ... Column part electrically conductive film, 32a ... 1st connection part, 32b ... 2nd connection Part, 32f ... conductive film of connection part, 33 ... seed layer, 37 ... first resist layer, 38 ... second resist layer, 50 ... sealing part, 50f ... resin layer, 60 ... optical layer, 61 ... phosphor layer ( Wavelength conversion unit), 61f ... phosphor film, 62 ... translucent Optical part 63 ... Hard film 110, 110a to 110f ... Semiconductor light emitting device 201 ... Substrate 202 ... Insulating substrate part 203 ... Metal substrate part 210a, 210b ... First and second substrate electrodes 210f ... Substrate electrodes Conductive layer, 220 ... Mounting board insulating layer, 230a, 230b ... First and second connecting materials, 250 ... Mounting board, 310, 311 ... Light source device, L ... Length, Sa ... Board electrode area, Tj ... Junction part Temperature, W ... Length, t1, t2 ... Thickness

Claims (7)

A semiconductor light emitting device including a light emitting unit, a first conductive unit, a second conductive unit, a sealing unit, an optical layer, and an insulating layer;
A mounting substrate comprising: a base; and a first substrate electrode and a second substrate electrode provided on a surface of the base facing the semiconductor light emitting device;
A first connecting member for electrically connecting the first conductive portion and the first substrate electrode;
A second connecting material for electrically connecting the second conductive portion and the second substrate electrode;
With
The light emitting unit
A first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A first main surface on the semiconductor layer side and a second main surface on the second semiconductor layer side, wherein the second semiconductor layer and the light emitting layer are selectively removed and the second main surface A semiconductor laminate in which a part of the first semiconductor layer is exposed;
A first light-emitting portion electrode electrically connected to the first semiconductor layer on the second main surface side;
A second light emitting part electrode comprising at least one metal material of silver, aluminum, gold and nickel and electrically connected to the second semiconductor layer on the second main surface side;
Including
The first conductive portion is electrically connected to the first light emitting portion electrode, and is provided with a first column portion standing on the second main surface, the first light emitting portion electrode, and the first column portion. And a first connection part for electrically connecting
The second conductive portion is electrically connected to the second light emitting portion electrode, and includes a second pillar portion standing on the second main surface, and a material of the second light emitting portion electrode including copper. Includes a second connection portion formed of a different material and electrically connecting the second light emitting portion electrode and the second pillar portion,
The sealing portion covers a side surface of the first conductive portion and a side surface of the second conductive portion,
The optical layer is an optical layer provided on the first main surface of the semiconductor stacked body, and absorbs emitted light emitted from the light emitting layer and emits light having a wavelength different from the wavelength of the emitted light. Including a wavelength conversion unit to emit,
The insulating layer is provided between a part of the second semiconductor layer on the second main surface side and the first connection portion,
The first connection portion and the first pillar portion cover the part of the second semiconductor layer on the second main surface side through the insulating layer,
The cross-sectional area obtained by cutting the first column part in a plane perpendicular to the direction from the second main surface toward the first main surface is larger than the area of the first light emitting unit electrode,
The cross-sectional area obtained by cutting the second column part along the plane is smaller than the cross-sectional area obtained when the second connection part is cut along the plane. The light source device according to claim 1, wherein an area of the second light emitting unit electrode is larger than the area of the first light emitting unit electrode.   3. The light source device according to claim 1, wherein an area of the second substrate electrode is 30 times or more of a cross-sectional area cut by the plane of the second column part. 4.   3. The light source device according to claim 1, wherein an area of the second substrate electrode is at least 100 times a cross-sectional area cut along the plane of the second column part. 4.   5. The light source device according to claim 1, wherein an area of the first substrate electrode is 100 times or more a cross-sectional area of the first pillar portion cut along the plane. The mounting substrate is a portion on a portion excluding a portion connected to the first connecting material of the first substrate electrode and a portion excluding a portion connected to the second connecting material of the second substrate electrode. the light source device according to any one of claims 1-5, characterized in that it further comprises a mounting substrate insulating layer provided on the. The base includes an insulating substrate portion on which the first substrate electrode and the second substrate electrode are provided;
A metal substrate portion laminated on the insulating substrate portion on a side opposite to the first substrate electrode and the second substrate electrode of the insulating substrate portion;
Any one of the light source apparatus according to claim 1-6, characterized in that it comprises a.

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