JP2002343944A - Transferring method of electronic part, arraying method of element, and manufacturing method of image display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To surely, efficiently, and precisely transfer only an electronic part to be transferred with no effect on other parts. SOLUTION: Electronic parts arrayed on a first substrate are selectively transferred onto a second substrate where an adhesive resin layer is formed. While a process residue of a previous process remains on an electronic part surface, a laser beam is projected to a rear surface side of a second substrate to selectively heat an adhesive resin layer on the second substrate, and the adhesive resin layer is cured o that an element to be transferred is bonded to the second substrate. When the laser beam is projected from the rear surface side of the substrate to heat the adhesive resin layer at that part, the adhesive resin layer at that heated part selectively provides adhesive power. By curing it, only the element to be transferred is selectively transferred onto the second substrate. Here, a process residue on the electronic part surface functions as a reactive material for the laser to efficiently convert the laser beam into heat.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of transferring an electronic component used when mounting an electronic component such as a functional semiconductor component on a substrate.
The present invention relates to a method for arranging elements for transferring a microfabricated element to a wider area by applying this transfer method and a method for manufacturing an image display device.

[0002]

2. Description of the Related Art Conventionally, when assembling an image display device by arranging light emitting elements in a matrix, a conventional device such as a liquid crystal display (LCD) or a plasma display panel (PDP) is conventionally used. An element is formed directly on a substrate, or a single LED package is arranged like a light emitting diode display (LED display). For example, in an image display device such as an LCD or a PDP, since elements cannot be separated, each element is usually formed at an interval of a pixel pitch of the image display device from the beginning of the manufacturing process.

On the other hand, in the case of an LED display, L
ED chips are taken out after dicing, individually connected to external electrodes by wire bonding or flip-chip bump connection, and packaged. In this case, the pixels are arranged at the pixel pitch as an image display device before or after packaging, but this pixel pitch is irrelevant to the element pitch at the time of element formation.

An LED (light emitting diode) as a light emitting element
Is expensive, so that by manufacturing a large number of LED chips from one wafer, an image display device using LEDs can be reduced in cost. That is, if an LED chip having a size of about 300 μm square is replaced by an LED chip having a size of several tens of μm square, and the LED chip is connected to manufacture an image display apparatus, the price of the image display apparatus can be reduced.

Therefore, there is a technique for forming a relatively large display device such as an image display device by forming each element with a high degree of integration and moving each element in a wide area while separating them by transfer or the like, for example, US Pat. No. 5,438,241. There are known techniques such as a thin film transfer method described in Japanese Unexamined Patent Application Publication No. Hei. US Patent No. 5,438,241
Discloses a transfer method in which elements formed densely on a substrate are coarsely arranged again.After transferring the elements to a stretchable substrate with an adhesive, the elements are expanded and contracted while monitoring the intervals and positions of the elements. The flexible substrate is stretched in the X and Y directions. Then, each element on the stretched substrate is transferred onto a required display panel. In the technique described in JP-A-11-142878, a thin film transistor constituting a liquid crystal display portion on a first substrate is entirely transferred onto a second substrate,
Next, there is disclosed a technique of selectively transferring data from the second substrate to a third substrate corresponding to a pixel pitch.

[0006]

When an image display device is manufactured by the above-described transfer technique, it is necessary to selectively and surely transfer only elements to be transferred.
In addition, efficient transfer and accurate transfer are required.

As a method for mounting fine electronic components and electronic devices, and further, electronic components in which they are embedded in an insulator such as plastic, on a mounting substrate, a method using a thermoplastic resin as an adhesive is generally used. is there. For example,
A required portion of the mounting board is coated with a thermoplastic resin, and electronic components are placed thereon. Thereafter, the entire substrate is heated to soften the adhesive, and then cooled and fixed to the substrate. Or,
A thermoplastic resin is applied to the entire surface of the substrate, electronic components are placed thereon, and the entire substrate is heated. The adhesive is softened and then cooled and fixed. There is also known a method of removing the exposed adhesive by etching or plasma treatment to obtain a similar structure.

However, when such a method is used, it is necessary to place electronic components one by one when placing them, which is not only complicated, but also causes misalignment of other components due to overall heating of the substrate. Peeling also becomes a problem.
For example, when all the components of the supply source are arranged on the substrate in the same arrangement, a method of transferring from the substrate to the substrate is possible. In the case of using a thermoplastic resin, the entire surface is exposed to a high frequency or atmosphere and heated to generate an adhesive force stronger than the adhesive force of the supply source to the substrate, and is transferred to the substrate side. By applying this, it is possible to selectively transfer the parts to be transferred and the parts not to be transferred, but it is difficult to heat only the desired parts by the existing technology, and it has become practical. Absent.

In addition, in the case of the existing whole surface heating, if a thermoplastic resin is applied to an extra portion, there is a possibility that the installation position of the component is changed due to fluidity during heating. Therefore, in general, it is necessary to apply a resin to a position where components are to be placed in advance, and the above-mentioned complication cannot be solved. Similarly, a method of once taking out an electronic component from a supply source using a suction head or the like and placing it on a substrate is also conceivable,
When the substrate is fixed from the suction head to the substrate, if the entire surface is heated, there is a possibility that another component that has already been bonded may be peeled off.

The present invention has been proposed in view of such a conventional situation, and it is possible to reliably transfer only the electronic component to be transferred among the electronic components on the substrate, and to efficiently and accurately perform the transfer. An object of the present invention is to provide a method for transferring an electronic component capable of transferring an electronic component, and further provide a method for arranging elements and a method for manufacturing an image display device using the method.

[0011]

In order to achieve the above object, an electronic component transfer method according to the present invention is directed to a method of transferring electronic components arranged on a first substrate to a second electronic component having an adhesive resin layer formed thereon. In the method of transferring an electronic component to be transferred onto a substrate, an electromagnetic wave (for example, a laser beam) is irradiated from the back surface side of the second substrate in a state where the processing residue of the previous process remains on the surface of the electronic component. The electronic component to be transferred is fixed to the second substrate by heating the adhesive resin layer.

When the adhesive resin layer is heated by irradiating a laser beam from the back side of the substrate, the heated adhesive resin layer selectively exerts an adhesive force. Then, by curing this, only the electronic component to be transferred is selectively transferred onto the second substrate. At this time, the processing residue remaining on the surface of the electronic component has a high absorptance of laser light, and by using this as a reaction material, the amount of heat obtained from the laser light increases, and efficient heating is realized. For example, processing residues left after dicing are usually processed and removed before the next step. In the present invention, the processing residue is used as a reaction material as described above, and there is also an advantage that the number of steps for processing the processing residue can be reduced.

[0013] The method of arranging elements of the present invention may be arranged such that the elements arranged on the first substrate are separated from the state in which the elements are arranged on the first substrate. The method of arranging elements to be rearranged into a plurality of steps includes a step of solidifying the elements with a resin, a step of dicing the resin to separate each element to form a resin-formed chip, and a transfer step of transferring the resin-formed chip. Then, in the transfer step, the adhesive resin layer on the substrate is irradiated by irradiating a laser beam from the back surface side of the substrate to which the resin-formed chip is transferred in a state where the processing residue of the previous step remains on the surface of the resin-formed chip It is characterized by selectively heating and fixing a resin-formed chip to be transferred to the substrate. In the above method, since the transfer of the elements is performed efficiently and reliably while maintaining the advantages of the above-described transfer method, the enlarged transfer to increase the distance between the elements is smoothly performed.

Further, in the method of manufacturing an image display device according to the present invention, the light emitting elements arranged on the first substrate may be separated from the state where the light emitting elements are arranged on the first substrate. In a method for manufacturing an image display device in which light-emitting elements are rearranged on a second substrate and arranged in a matrix, a step of solidifying the light-emitting elements with a resin, and dicing the resin to separate the light-emitting elements into light-emitting elements and forming a resin-formed chip Forming, and a transfer step of transferring the resin-formed chip, wherein the transfer step is a back surface of the substrate to which the resin-formed chip is transferred in a state where the processing residue of the previous process remains on the surface of the resin-formed chip. The method is characterized in that a resin light-emitting chip to be transferred is fixed to the substrate by irradiating a laser beam from the side to selectively heat the adhesive resin layer on the substrate. According to the method of manufacturing the image display device, the light emitting elements are arranged in a matrix by the transfer method and the arrangement method, and the image display portion is configured. Therefore, the light-emitting elements formed by performing fine processing in a dense state, that is, by increasing the degree of integration can be efficiently rearranged and rearranged, and productivity is greatly improved.

[0015]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for transferring and arranging electronic components and a method for manufacturing an image display device to which the present invention is applied will be described in detail with reference to the drawings. First, a basic electronic component transfer method will be described.

FIG. 1 shows an example of an electronic component transfer process to which the present invention is applied. In this example, laser dicing of an electronic component is performed on a base substrate, and after the individual electronic components are diced, a transfer process is performed. That is, first, as shown in FIG.
An adhesive layer 2 is formed thereon, and an electronic component layer 3 is collectively formed thereon. Then, laser dicing is performed to divide the electronic component 4 into chip components as shown in FIG. I do.

Here, the electronic component 4 can be applied to any electronic component. For example, fine electronic components and electronic devices such as functional semiconductor components, and various elements can be applied to insulating devices such as plastics. Examples include electronic components embedded in the body. The embedded elements are also
It can be applied to any element, for example, a light emitting element, a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micro magnetic element, a micro optical element, and the like. Can be mentioned. Further, by using, for example, an adhesive resin having a relatively small adhesive force for the adhesive layer 2, it is possible to easily transfer the adhesive layer to another substrate.

A processing residue (so-called processing waste) 5 generated by the laser dicing remains on the surface of the electronic component 4 after the laser dicing. Usually, this processing residue is removed by some processing, and the process proceeds to a subsequent step. In the present invention, the next step (transfer step) is performed without intentionally removing the processing residue 5 and leaving it as it is. FIG. 1 (c)
Shows this transfer step. In order to transfer the electronic component 4 to the substrate to be transferred, the transfer substrate 6 having the adhesive resin layer 7 formed on the entire surface is arranged to face the base substrate 1 on which the electronic components 4 are arranged. Since the transfer substrate 6 needs to irradiate a laser beam from the back surface side of the transfer substrate 6 when the electronic component 4 is transferred, it is preferable that the transfer substrate 6 has light transmittance. At the time of transfer, after the base substrate 1 is overlaid on the transfer substrate 6, a laser beam L is irradiated from the back surface side of the transfer substrate 6,
When the adhesive resin layer 7 is a thermoplastic resin, it is selectively softened, and then solidified by cooling to fix the electronic component 4. The type of laser beam L to be applied is not particularly limited as long as the laser beam L can heat the adhesive resin layer 7, and for example, YAG second harmonic (wavelength: 532 nm: green) can be used.

For example, as shown in FIG. 2, a laser beam L is radiated from the back side of the transfer substrate 6 to selectively heat only the adhesive resin layer 7 at a portion where the electronic component 4a to be transferred contacts. Then, the adhesive resin layer 7 made of a thermoplastic adhesive resin
Only the heating region H is softened and exhibits an adhesive force to the electronic component 4a. After that, when the irradiation of the laser beam is stopped and the above-mentioned heating area H is cooled and hardened, the electronic component 4 a is fixed to the transfer substrate 6 by the adhesive resin layer 7. At this time, even if another component is already bonded and fixed on the transfer substrate 6, the adhesive resin layer 7 for bonding and fixing the other component is not irradiated with the laser beam, and therefore, the adhesive resin layer in this portion is not irradiated. 7 does not soften and other parts are not peeled off or displaced.

At this time, a processing residue 5 remains on the surface of the electronic component 4, and the laser light is also applied to the processing residue. The processing residue has a high laser beam absorptivity, and the irradiated laser light is efficiently converted into heat by irradiating the processing residue. The adhesive resin layer 7 is quickly softened by the heat generated thereby, and the electronic component 4a is bonded and fixed.

As described above, by using the processing residue 5 as a reaction material at the time of laser irradiation, the amount of heat obtained from the laser is increased, the diffusion of heat is suppressed, and the adhesive resin layer 7 is removed.
Can be efficiently heated and melted. In addition, by using the processing residue 5 as a reaction material of the laser light, most of the laser light is absorbed by the processing residue 5 and the electronic components 4 behind the processing residue 5 are deteriorated or damaged by the influence of the laser light. And no more. As described above, since the possibility that heat is transmitted to the electronic component 4 is low, the type and wavelength of the laser can be selected without being restricted to the electronic component 4. Further, by using the processing residue 5 as a reaction material of laser light, the calorific value can be estimated to some extent, and when selecting a material such as a functional element constituting the electronic component 4, the wavelength characteristic of the laser light may be reduced. It is possible to freely select without depending on.

After the electronic component 4a is fixed to the transfer substrate 6 after the adhesive resin layer 7 is heated and softened by laser beam irradiation and cured by cooling, the base substrate 1 is peeled off. Thus, as shown in FIG. 1D, the electronic component 4a to be transferred is transferred onto the transfer substrate 6, but in this state, the adhesive resin layer 7 is still formed on the entire surface. Therefore, etching is performed as shown in FIG.
Is removed to complete the selective transfer process.

As described above, by using a laser beam, it is possible to heat a very narrow portion of the adhesive resin layer 7 in a short time, and to fix the adhesive resin layer adjacent to the already bonded component. Since the heat is not transmitted to the electronic component 7, the electronic component 4a can be selectively transferred without affecting the state of fixation of these adjacently bonded components. When heating the whole surface like the existing technology,
There is a possibility that the part moves due to fluidization up to the adhesive resin layer 7 to which another part is fixed. In the present invention, such a situation can be avoided.

When the adhesive resin layer 7 is formed by coating,
There is no need to selectively apply a small amount of adhesive resin only to the portion where the electronic component 4a is to be placed, and it is sufficient to apply the resin uniformly over the entire surface, and the process can be simplified. In the above description, a thermoplastic adhesive resin has been described as an example of a material constituting the adhesive resin layer 7, but the electronic component can be selectively transferred by a similar method using a thermosetting adhesive resin. . In the case of a thermosetting adhesive resin, only the portion heated by the irradiation of the laser beam is thermoset to fix the electronic component.

In the example shown in FIG. 1, the processing residue of laser dicing is used as a reaction material for laser. However, the present invention is not limited to this. For example, a processing residue generated in another processing step, for example, laser ablation may be used. Is also possible. FIG. 3 shows an example in which an electronic component is peeled off by laser ablation, and a residue generated by the laser ablation is used as a laser reaction material. In this example, first, as shown in FIG.
An electronic component layer 13 in which a functional element is embedded in an insulating material such as a resin material is formed thereon. The electronic component layer 3 is formed as a pre-stage for forming a chip component.
For example, it is configured by arranging functional elements at a predetermined pitch in a continuously formed insulating material and forming electrodes and the like as necessary.

Next, as shown in FIG. 3B, a laser beam is irradiated entirely from the back side of the element forming substrate 11 so that the electronic component layer 13 is formed on the component supply substrate 14 on which the adhesive layer 15 is formed. Transfer to This transfer is performed by causing laser ablation at the interface between the electronic component layer 13 and the release layer 12 on the element forming substrate 11. At this time, the surface of the transferred electronic component layer 13 is
As shown in (c), the processing residue 16 of the laser ablation adheres. In this example, the processing residue 16 is left without being removed, and the process proceeds to the next step.

FIGS. 3D and 3E show a process of separating the transferred electronic component layer 13 into individual electronic components 17 by laser dicing. In this step, the electronic component layer 13 is cut by scanning with a laser beam as shown in FIG. 3D, and separated into individual electronic components 17 as shown in FIG. 3E. Although processing residues are generated in this laser dicing, the next step (transfer step) is performed without removing the processing residues. This transfer process is shown in FIG.
As shown in (f), the component supply board 14 is so arranged that the adhesive resin layer 19 formed on the surface is in contact with the electronic component 17.
The transfer substrate 18 is overlaid on the substrate, and a laser beam is irradiated from the back side of the transfer substrate 18 to the electronic component 17a to be transferred. The electronic component 17a to be transferred is fixed to the transfer substrate 18 by the heating and softening of the adhesive resin layer 19 by the laser beam irradiation and the curing by cooling. At this time, the processing residue 16 generated by the laser ablation or the laser dicing and remaining on the surface of the electronic component 17 is formed.
However, it functions as a laser reaction material at the time of the laser irradiation, and efficiently converts it into heat. Finally, after removing the component supply board 14 as shown in FIG. 3 (g), etching is performed as shown in FIG. 3 (h) to remove an excess portion of the adhesive resin layer 19, and a selective transfer process is performed. Complete.

The above transfer method is extremely useful when applied to, for example, element transfer in an active matrix type image display device. In an active matrix type image display device, it is necessary to arrange R, G, and B light emitting elements adjacent to a Si transistor as a driving element. These R, G, and B light emitting elements need to be sequentially transferred to a position close to the Si transistor. However, the Si transistor has extremely good thermal conductivity, and the application of heat leads to breakage of an internal circuit. Here, by using the above-described transfer method, it is possible to prevent heat from being transmitted to the Si transistor, and it is possible to solve the above-described inconvenience. For example,
The size of the Si transistor is 560 μm × 160 μ
m × 35 μm, each light-emitting element has a small area of about 5 to 10 μm on a side, and an epoxy-based thermosetting resin is used as an adhesive resin, and when a YAG double laser (wavelength: 532 nm) is irradiated, heating by laser irradiation is 1 ns. Cooling is about 10 nsec. If the heating time by laser irradiation is 4 nsec or less, the influence of heat on adjacent Si transistors will not be affected.

Next, as an application example of the transfer method, a method of arranging elements by a two-step enlargement transfer method and a method of manufacturing an image display device will be described. The method of arranging the elements and the method of manufacturing the image display device of the present example are arranged such that the elements formed on the first substrate with a high degree of integration are separated from the state in which the elements are arranged on the first substrate. A two-stage enlargement transfer is performed in which the image is transferred to the temporary holding member, and then the element held by the temporary holding member is further separated and transferred onto the second substrate. In this example, the transfer is performed in two stages. However, the transfer may be performed in three stages or more stages such as three or more stages in accordance with the degree of enlargement in which the elements are spaced apart.

FIG. 4 is a diagram showing the basic steps of the two-step enlargement transfer method. First, elements 22 such as light emitting elements are densely formed on a first substrate 20 shown in FIG. By forming the elements densely, the number of elements generated per substrate can be increased, and the product cost can be reduced. The first substrate 20 is a substrate on which various elements can be formed, such as a semiconductor wafer, a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate. Each element 12 is formed directly on the first substrate 20. Alternatively, an array of elements formed on another substrate may be used.

Next, as shown in FIG. 4B, the first substrate 2
From 0, each element 22 is a temporary holding member 21 indicated by a broken line in the figure.
Is transferred to the temporary holding member 21 and each element 22
Is held. Here, the adjacent elements 22 are separated and arranged in a matrix as shown in the figure. That is, the element 22
Is transferred so as to spread the space between the elements also in the x direction, but is also transferred so as to spread the space between the elements also in the y direction perpendicular to the x direction. The distance to be separated at this time is not particularly limited, and may be, for example, a distance in consideration of formation of a resin portion and formation of an electrode pad in a subsequent step.
When transferring from the first substrate 20 onto the temporary holding member 21, all the elements on the first substrate 20 can be separated and transferred. In this case, the size of the temporary holding member 21 may be equal to or larger than the size obtained by multiplying the number of the elements 22 arranged in a matrix (in the x direction and the y direction) by the distance apart. Further, it is also possible that some elements on the first substrate 20 are transferred onto the temporary holding member 21 while being separated from each other.

After such a first transfer step, FIG.
As shown in the figure, the element 2 existing on the temporary holding member 21
Since the elements 2 are separated from each other, resin coating around the elements and formation of electrode pads are performed for each element 22. The resin coating around the element is formed to facilitate the formation of the electrode pad and facilitate the handling in the next second transfer step. Since the electrode pads are formed after the second transfer step following the final wiring, as described later, the electrode pads are formed to have a relatively large size so that wiring defects do not occur. The electrode pads are not shown in FIG. The resin forming chip 24 is formed by covering the periphery of each element 22 with the resin 23. The element 22 is located substantially at the center of the resin-formed chip 24 on a plane, but may be located at a position deviated to one side or a corner.

Next, as shown in FIG. 4D, a second transfer step is performed. In the second transfer step, the elements 22 arranged in a matrix on the temporary holding member 21 are transferred onto the second substrate 25 so as to be further separated together with the resin forming chip 24. The transfer method shown in FIG. 1 is applied to this second transfer step, which will be described later in detail.

In the second transfer step, the adjacent element 2
2 are separated from each other with the resin-formed chip 24 and are arranged in a matrix as shown in the figure. That is, the elements 22 are transferred so as to extend the space between the elements in the x direction, but are also transferred so as to expand the space between the elements in the y direction perpendicular to the x direction. Assuming that the position of the element arranged in the second transfer step is a position corresponding to a pixel of a final product such as an image display device, an approximately integral multiple of the initial pitch between the elements 22 is arranged in the second transfer step. The pitch of the element 22 is obtained. Here, assuming that the enlargement ratio of the pitch separated from the first substrate 20 by the temporary holding member 21 is n, and the enlargement ratio of the pitch separated from the temporary holding member 21 by the second substrate 25 is m, approximately an integer multiple. Is expressed as E = nxm.

Each element 22 separated from the second substrate 25 along with the resin forming chip 24 is provided with wiring. At this time,
Wiring is performed by using the previously formed electrode pad and the like while minimizing poor connection. This wiring is, for example, the element 22
Is a light emitting element such as a light emitting diode,
In the case of a liquid crystal control element, the wiring includes a selection signal line, a voltage line, and a wiring such as an alignment electrode film.

In the two-stage enlarged transfer method shown in FIG. 4, electrode pads and resin hardening can be performed by using the space separated after the first transfer, and wiring is performed after the second transfer. However, wiring is performed using the previously formed electrode pads and the like while minimizing poor connection. Therefore, the yield of the image display device can be improved. Further, in the two-stage enlargement transfer method of the present example, the step of separating the distance between the elements is two steps, and by performing such a plurality of steps of enlargement transfer that separates the distance between the elements,
Actually, the number of transfers is reduced. That is, for example,
Here, the enlargement ratio of the pitch separated from the first substrate 20 by the temporary holding member 21 is 2 (n = 2), and the enlargement ratio of the pitch separated from the temporary holding member 21 by the second substrate 25 is 2 (n = 2).
Assuming that (m = 2), if it is attempted to transfer the image to the area enlarged by one transfer, the final enlargement ratio is 4 × 2 × 2, and the transfer of the square 16 times, that is, the alignment of the first substrate is performed. In the two-step enlargement transfer method of this example, the number of times of alignment is four times the square of the enlargement factor 2 in the first transfer step and four times the square of the enlargement rate 2 in the second transfer step. It would be a total of eight times simply adding the times.
That is, when the same transfer magnification is intended, (n +
m) Since ² = n ² +2 nm + m ² , 2n
The number of times of transfer can be reduced by m times. Therefore, the manufacturing process saves time and money by the number of times,
This is particularly useful when the magnification is large.

In the two-stage enlargement transfer method shown in FIG. 4, the element 22 is, for example, a light emitting element. However, the invention is not limited to this, and other elements such as a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, and a thin film transistor Element, thin-film diode element, resistance element, switching element, micro magnetic element,
An element selected from micro optical elements or a part thereof, a combination thereof, or the like may be used.

In the second transfer step, the resin-formed chip is handled as a resin-formed chip and transferred from the temporary holding member to the second substrate. The resin-formed chip will be described with reference to FIGS. The resin-formed chip 24 is formed by solidifying the periphery of the element 22 that is spaced apart with the resin 23, and such a resin-formed chip 24 transfers the element 22 from the temporary holding member to the second substrate. It can be used in cases. The main surface of the resin-formed chip 24 has a substantially square shape on a substantially flat plate. The shape of the resin forming chip 24 is a shape formed by solidifying the resin 23.
Specifically, the shape is obtained by applying an uncured resin to the entire surface so as to include each element 22, curing the resin, and cutting the edge portion by dicing or the like.

Electrode pads 25 and 26 are formed on the front and back sides of the substantially flat resin 23, respectively. The formation of these electrode pads 25 and 26 is performed over the entire surface of the electrode pads 25 and 2.
The conductive layer is formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer as a material of No. 6 and patterning it into a required electrode shape by a photolithography technique. These electrode pads 25 and 26 are formed so as to be connected to the p electrode and the n electrode of the element 22 which is a light emitting element, respectively, and a via hole or the like is formed in the resin 23 when necessary.

Here, the electrode pads 25 and 26 are formed on the front side and the back side of the resin-formed chip 24, respectively. However, it is also possible to form both electrode pads on one side. Since there are three electrodes, a source, a gate, and a drain, three or more electrode pads may be formed. Electrode pad 25,
The reason why the position of 26 is shifted on the flat plate is to prevent the contacts from being overlapped even when a contact is taken from the upper side at the time of final wiring formation. The shape of the electrode pads 25 and 26 is not limited to a square, but may be another shape.

By forming such a resin-formed chip 24, the periphery of the element 22 is covered with the resin 23, and the electrode pads 25 and 26 can be formed with high precision by flattening. 25, 26
When the transfer in the next second transfer step is advanced by the suction jig, the handling becomes easy. As described below,
Since the final wiring is performed after the second transfer step that follows,
By performing the wiring using the relatively large-sized electrode pads 25 and 26, a wiring failure is prevented beforehand.

Next, FIG. 7 shows a structure of a light-emitting element as an example of an element used in the two-step enlargement transfer method of this embodiment. FIG. 7A is a cross-sectional view of the element, and FIG. 7B is a plan view. This light-emitting element is a GaN-based light-emitting diode, for example, an element that is crystal-grown on a sapphire substrate. In such a GaN-based light-emitting diode, laser ablation occurs due to laser irradiation that passes through the substrate, and film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer due to the phenomenon that GaN nitrogen evaporates, It has a feature that element separation can be easily performed.

First, with respect to the structure, a hexagonal pyramid-shaped GaN layer 32 selectively grown on a base growth layer 31 made of a GaN-based semiconductor layer is formed. Note that an insulating film (not shown) exists on the base growth layer 31. The hexagonal pyramid-shaped GaN layer 32 is formed by MOCVD at a portion where the insulating film is opened.
It is formed by a method or the like. The GaN layer 32 is a pyramid-shaped growth layer covered with an S-plane (1-101 plane) when the main surface of the sapphire substrate used at the time of growth is a C-plane, and is a region doped with silicon. is there. This G
The inclined S-plane portion of the aN layer 32 functions as a double heterostructure cladding. An InGaN layer 33, which is an active layer, is formed so as to cover the inclined S surface of the GaN layer 32, and a magnesium-doped GaN layer 34 is formed outside the InGaN layer 33.
Is formed. This magnesium-doped GaN layer 34
Also function as cladding.

Such a light emitting diode has a p electrode 3
5 and an n-electrode 36 are formed. The p-electrode 35 is formed of Ni / Pt formed on a magnesium-doped GaN layer 34.
/ Au or a metal material such as Ni (Pd) / Pt / Au. The n-electrode 36 is formed by evaporating a metal material such as Ti / Al / Pt / Au at a portion where the above-mentioned insulating film (not shown) is opened. Note that the underlying growth layer 31
When taking out the n-electrode from the back side of the
Is not required on the surface side of the base growth layer 31.

The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be relatively easily separated from the sapphire substrate by laser ablation, and selectively emits a laser beam. Thereby, selective peeling is realized. Note that the GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or a band, or may have a pyramid structure in which a C-plane is formed at an upper end. Further, other nitride-based light emitting devices, compound semiconductor devices, or the like may be used.

Next, a specific method of the method of arranging the light emitting elements shown in FIG. 4 will be described with reference to FIGS. The light emitting element uses the GaN-based light emitting diode shown in FIG. First, as shown in FIG. 8, a plurality of light emitting diodes 42 are formed in a matrix on the main surface of the first substrate 41. The size of the light emitting diode 42 can be about 20 μm. First substrate 41
A material having a high transmittance at the wavelength of the laser to be applied to the photodiode 42, such as a sapphire substrate, is used as the constituent material. Although the light emitting diode 42 is formed up to the p-electrode and the like, the final wiring is not yet formed, a groove 42g for element isolation is formed, and the individual light emitting diodes 42 can be separated. This groove 42
The formation of g is performed by, for example, reactive ion etching. Such a first substrate 41 is opposed to the temporary holding member 43, and selective transfer is performed as shown in FIG.

On the surface of the temporary holding member 43 facing the first substrate 41, a release layer 44 and an adhesive layer 45 are formed in two layers. Here, as an example of the temporary holding member 43, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used. As an example of the release layer 44 on the temporary holding member 43, fluorine coating, silicone resin, water-soluble resin, or the like can be used. Adhesive (for example, polyvinyl alcohol: PVA),
Polyimide or the like can be used. Further, as the adhesive layer 45 of the temporary holding member 43, a layer made of any one of an ultraviolet (UV) curable adhesive, a thermosetting adhesive, and a thermoplastic adhesive can be used. As an example, a quartz glass substrate is used as the temporary holding member 43 and the release layer 44 is used.
After forming a polyimide film of 4 μm, a UV curable adhesive as the adhesive layer 45 is applied with a thickness of about 20 μm.

The adhesive layer 45 of the temporary holding member 43 is adjusted so that the cured region 45s and the uncured region 45y are mixed, and the adhesive layer 45 is positioned such that the light emitting diode 42 for selective transfer is located in the uncured region 45y. Be matched. Adjustment such that the cured region 45s and the uncured region 45y coexist is performed, for example, by selectively applying a UV-curable adhesive to an exposure machine.
The portion where the light emitting diode 42 is transferred by UV exposure at a pitch of 00 μm may be uncured and the other portions may be cured. After such alignment, the laser is applied to the light emitting diode 42 at the transfer target position on the first substrate 41.
Then, the light emitting diode 42 is separated from the first substrate 41 by using laser ablation. G
Since the aN-based light-emitting diode 42 is decomposed into metallic Ga and nitrogen at the interface with sapphire, it can be relatively easily separated. An excimer laser, a harmonic YAG laser, or the like is used as a laser for irradiation.

By the peeling using the laser ablation, the light emitting diode 42 subjected to the selective irradiation becomes Ga
It is separated at the interface between the N layer and the first substrate 41 and transferred to the adhesive layer 45 on the opposite side so as to pierce the p-electrode portion. With respect to the light emitting diode 42 in a region not irradiated with another laser, a region s where the corresponding adhesive layer 45 is hardened.
Since the laser is not irradiated, it is not transferred to the temporary holding member 43 side. In FIG. 8, 1
Although only one light emitting diode 42 is selectively irradiated with laser, it is assumed that the light emitting diode 42 is similarly irradiated with laser even in a region separated by n pitches. By such selective transfer, the light emitting diodes 42 are arranged on the temporary holding member 43 at a greater distance than when they are arranged on the first substrate 41.

The light emitting diode 42 has a temporary holding member 43
The light emitting diode 4 is held by the adhesive layer 45 of FIG.
2 has an n-electrode side (cathode electrode side),
Since the back surface of the light emitting diode 42 is removed and cleaned so that there is no resin (adhesive), if the electrode pad 46 is formed as shown in FIG. Connected to. As an example of cleaning the adhesive layer 45, the resin for the adhesive is etched by oxygen plasma and cleaned by UV ozone irradiation. In addition, when the GaN-based light emitting diode is separated from the first substrate 41 made of a sapphire substrate by laser, Ga is required to be etched because Ga is deposited on the separated surface. It will be done with nitric acid. After that, the electrode pads 46 are patterned. At this time, the electrode pad on the cathode side can be about 60 μm square. As the electrode pad 46, a transparent electrode (IT
O, ZnO, etc.) or a material such as Ti / Al / Pt / Au. In the case of a transparent electrode, light emission is not blocked even if the back surface of the light emitting diode is largely covered.
The patterning accuracy is coarse, a large electrode can be formed, and the patterning process is facilitated.

After the electrodes are formed, as shown in FIG. 10, laser dicing by laser irradiation is performed. FIG. 11 shows a state where the adhesive layer 45 made of resin is diced. As a result of this dicing, an element isolation groove 47 is formed, and the light emitting diode 42 is divided for each element. The element isolation groove 47 separates each of the light emitting diodes 42 in a matrix, so that the planar pattern is formed of a plurality of parallel lines extending vertically and horizontally. The dicing process may be dicing using a normal blade.
When a notch with a width of 0 μm or less is required, laser processing using the above laser is performed. The cut width depends on the size of the light emitting diode 42 covered with the adhesive layer 45 made of resin in the pixel of the image display device. As an example, a groove is processed by an excimer laser to form a chip shape. After this dicing process, the processing residue 48 adheres to the cut surface of the resin-formed chip, but in this example, the following steps are performed without removing the processing residue 48 and leaving it on the surface.

FIG. 12 shows that the light emitting diode 42 is transferred from the temporary holding member 43 to the second temporary holding member 49 to form a via hole 50 on the anode electrode (p electrode) side. This shows the formed state.
At this time, the release layer 52 is formed on the second temporary holding member 49.
Are formed. This release layer 52 is made of, for example, a fluorine coat, a silicone resin, a water-soluble adhesive (for example, PVA),
It can be made using polyimide or the like. The second temporary holding member 49 is, for example, a so-called dicing sheet in which a UV adhesive is applied to a plastic substrate, and a material whose adhesive strength decreases when UV is irradiated can be used.

At the time of the transfer, an excimer laser is irradiated from the back surface of the temporary holding member 43 on which the release layer 44 is formed. Thus, for example, when polyimide is formed as the peeling layer 44, peeling occurs due to ablation of the polyimide, and each light emitting diode 42 is transferred to the second temporary holding member 49 side. Further, as an example of the formation process of the anode electrode pad 51, the surface of the adhesive layer 45 is etched by oxygen plasma until the p-electrode on the surface of the light emitting diode 42 is exposed. The via hole 50 can be formed using an excimer laser, a harmonic YAG laser, or a carbon dioxide laser. At this time, the via hole has a diameter of about 3 to 7 μm. The anode electrode pad 51 is formed of Ni / Pt / Au or the like.

Next, the light emitting diode 42 is separated from the second temporary holding member 49 by using mechanical means. FIG.
3 is a diagram showing that the light emitting diodes 42 arranged on the second temporary holding member 49 are picked up by the suction device 53. At this time, the suction holes 54 are opened in a matrix at the pixel pitch of the image display device so that a large number of the light emitting diodes 42 can be collectively sucked. The opening diameter at this time is, for example, about φ100 μm, and the openings are formed in a matrix with a pitch of 600 μm, and about 300 pieces can be collectively adsorbed. At this time, the member of the suction hole 54 is formed by, for example, Ni electroforming or a metal plate 55 made of stainless steel (SUS) formed by etching. The suction chamber 56 is formed, and the suction of the light-emitting diode 42 becomes possible by controlling the suction chamber 56 to a negative pressure. At this stage, the light emitting diode 42 is covered with an adhesive layer 45 made of resin, and the upper surface thereof is substantially flattened, so that the selective suction by the suction device 53 can be easily promoted.

FIG. 14 shows the light emitting diode 42 connected to the second substrate 5.
FIG. 7 is a view showing a state where the image is transferred to a position No. 7; The transfer method shown in FIG. 1 is applied to this transfer. That is, when the light-emitting diode 42 is mounted on the second substrate 57, the adhesive layer 58 is applied to the second substrate 57 in advance, and the adhesive layer 58 on the lower surface of the light-emitting diode 42 is cured. Fix and arrange. At the time of this mounting, the suction chamber 56 of the suction device 53 is in a high pressure state, and the bonded state of the suction device 53 and the light emitting diode 42 by suction is released. Here, the adhesive layer 58 is made of a thermosetting adhesive, a thermoplastic adhesive, or the like.

The position where the light emitting diode 42 is arranged is as follows.
It is separated from the arrangement on the temporary holding members 43 and 49. At this time, energy (laser light L) for curing the resin of the adhesive layer 58 is supplied from the back surface of the second substrate 57. As described above, the laser beam L is irradiated from the back surface of the second substrate 57, and only the adhesive layer 58 corresponding to the resin-formed chip (the light-emitting diode 42 and the adhesive layer 45) to be transferred is heated. . As a result, when the adhesive layer 58 is a thermoplastic adhesive, the adhesive layer 58 at that portion is softened, and then cooled and cured to fix the resin-formed chip on the second substrate 57. Similarly, the adhesive layer 5
Even when the thermosetting adhesive 8 is used, only the portion of the adhesive layer 58 irradiated with the laser beam L is cured, and the resin-formed chip is fixed on the second substrate 57. At this time, the processing residue 48 has good absorption characteristics with respect to the wavelength of the laser light L,
It functions as a reaction material and efficiently converts the energy of the laser beam L into heat, thereby promoting the heating.

Although an electrode layer 59 is formed as a substrate electrode on the second substrate 57, a black chrome layer 60 is formed on the electrode layer 59 in this embodiment.
As described above, if the black chrome layer 60 is formed on the surface of the electrode layer 59 on the screen side, that is, on the side where the viewer of the image display device is present, the image contrast can be improved.

FIG. 15 shows light emitting diodes 4 of three colors of RGB.
It is a figure showing the state where 2, 61 and 62 were arranged on the 2nd substrate 57, and applied insulating layer 63. When the mounting device 53 used in FIGS. 13 and 14 is used as it is and the mounting position on the second substrate 57 is merely shifted to the position of the color, the pixel is formed of three colors while keeping the pixel pitch constant. Can be formed. As the insulating layer 63, a transparent epoxy adhesive, a UV curable adhesive, polyimide, or the like can be used. The light-emitting diodes 42, 61, and 62 of the three colors do not necessarily have to have the same shape. In FIG. 15, the red light emitting diode 61 has a structure not having a hexagonal pyramid GaN layer and has a different shape from the other light emitting diodes 42 and 62.
Reference numerals 1 and 62 are already covered with the resin adhesive layer 45 as a resin-formed chip, and the same handling is realized despite the difference in the element structure.

FIG. 16 is a diagram showing a wiring forming step. Openings 64, 65, 66, 67, 68, 69 in the insulating layer 63
And wirings 70, 71, 72 for connecting the anode and cathode electrode pads of the light emitting diodes 42, 61, 62 to the wiring electrode layer 59 of the second substrate 57. The openings, ie, via holes, formed at this time are the electrode pads 46 of the light emitting diodes 42, 61, 62,
Since the area of 51 is increased, the shape of the via hole is large, and the positional accuracy of the via hole can be formed with a coarser accuracy than the via hole formed directly in each light emitting diode. At this time, the via holes are about 60 μm square electrode pads 46, 5.
One having a diameter of about 20 μm can be formed. In addition, there are three types of via hole depths, one that connects to the wiring substrate, one that connects to the anode electrode, and one that connects to the cathode electrode. . After that, a protective layer (not shown).
Is formed on the wiring, and the panel of the image display device is completed.
At this time, a material such as a transparent epoxy adhesive can be used for the protective layer as in the case of the insulating layer 63 in FIG. This protective layer is cured by heating and completely covers the wiring. Thereafter, a driver panel is manufactured by connecting a driver IC from the wiring at the end of the panel.

In the method of arranging the light emitting elements as described above, the distance between the elements is already increased at the time when the light emitting diodes 42 are held by the temporary holding member 43, and the extended distance is used to make the comparatively large. Size electrode pads 46,5
1 and the like can be provided. Since wiring using the relatively large electrode pads 46 and 51 is performed, wiring can be easily formed even when the size of the final device is significantly larger than the element size. In the method of arranging the light emitting elements of this embodiment, the periphery of the light emitting element is covered with the cured adhesive layer 45, and the electrode pads 46 and 51 can be formed with high accuracy by flattening. , 51 can be extended, and when the transfer in the next second transfer step is advanced by the suction jig, the handling becomes easy. The light emitting diode 42
Is transferred to the temporary holding member 43 by using the fact that the GaN-based material is decomposed into metallic Ga and nitrogen at the interface with sapphire.
Further, the transfer of the resin-formed chip to the second substrate (second transfer step) is performed by selectively heating and curing the adhesive layer by irradiating a laser beam. It is possible to reliably transfer only the resin-formed chip to be transferred without affecting.

[0061]

As is apparent from the above description, according to the electronic component transfer method of the present invention, only the electronic component to be transferred can be promptly moved by the selective curing of the adhesive resin by the selective irradiation of the laser beam. Then, the process is shifted to the second substrate side, and the selective transfer can be surely performed. In the case of heating the entire surface, there are problems such as large variations in conditions depending on the temperature condition and position of the furnace. However, in the case of laser heating, stable heating conditions can be obtained, and stable bonding can be achieved. In addition, the adhesive resin does not need to be selectively applied, and can be applied over the entire surface, so that the process can be simplified. further,
It does not affect the state of fixation of other parts, and does not cause peeling or displacement.

Further, in the present invention, since the processing residue generated in the previous step is used as a reaction material at the time of laser irradiation, the laser light can be efficiently converted into heat, and the heat diffusion can be achieved. Therefore, the adhesive resin layer can be efficiently heated. In addition, by using the processing residue as a reaction material for laser light, most of the laser light is absorbed by the processing residue, and the electronic components behind it are deteriorated or damaged by the influence of the laser light. Is also gone. As described above, since the possibility that heat is transmitted to the electronic component is low, the type and wavelength of the laser can be selected without being restricted to the electronic component. Furthermore, by using the processing residue as a reaction material of laser light, the calorific value can be predicted to some extent, and when selecting a material such as a functional element constituting an electronic component, it depends on the wavelength characteristic of the laser light. It is possible to select freely without any problem.

On the other hand, according to the element arrangement method of the present invention,
Since the transfer method of the element is applied, the transfer of the element can be performed efficiently and reliably, and the enlarged transfer for increasing the distance between the elements can be smoothly performed. Similarly, according to the method for manufacturing an image display device of the present invention, a light-emitting element formed by performing fine processing with a dense state, that is, with a high degree of integration can be efficiently separated by applying the element transfer method. Thus, it is possible to manufacture a highly accurate image display device with high productivity.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing an example of a transfer process according to a transfer method of the present invention.

FIG. 2 is a schematic diagram showing a state in which an adhesive resin layer is heated by a laser beam.

FIG. 3 is a schematic sectional view showing another example of the transfer process according to the transfer method of the present invention.

FIG. 4 is a schematic view showing a method of arranging elements.

FIG. 5 is a schematic perspective view of a resin-formed chip.

FIG. 6 is a schematic plan view of a resin-formed chip.

FIGS. 7A and 7B are diagrams illustrating an example of a light emitting element, wherein FIG. 7A is a cross-sectional view and FIG. 7B is a plan view.

FIG. 8 is a schematic sectional view showing a first transfer step.

FIG. 9 is a schematic cross-sectional view showing a step of forming an electrode pad.

FIG. 10 is a schematic sectional view showing a laser dicing step.

FIG. 11 is a schematic cross-sectional view showing a state where an element isolation groove is formed.

FIG. 12 is a schematic sectional view showing an electrode pad forming step after transfer to a second temporary holding member.

FIG. 13 is a schematic sectional view showing an adsorption step.

FIG. 14 is a schematic sectional view showing a second transfer step.

FIG. 15 is a schematic cross-sectional view showing a step of forming an insulating layer.

FIG. 16 is a schematic sectional view showing a wiring forming step.

[Explanation of symbols]

 Reference Signs List 1 base substrate 4,17 electronic component 5,16 processing residue 6,18 transfer substrate (second substrate) 7,19 adhesive resin layer 41 first substrate 42 light emitting diode 43 temporary holding member 45 adhesive layer 48 processing residue 57 Second substrate 58 Adhesive layer

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Toshiaki Iwabuchi 6-7-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Inside Sony Corporation (72) Inventor Hiroshi Ohba 6-35-35 Kita-Shinagawa, Shinagawa-ku, Tokyo Sony Corporation F term (reference) 5F041 CA40 CA46 CA76 CA77 DA13 FF06

Claims (17)

[Claims] In a method of transferring an electronic component arranged on a first substrate onto a second substrate on which an adhesive resin layer is formed, a processing residue of a previous process is formed on the surface of the electronic component. An electronic component to be transferred is fixed to the second substrate by irradiating electromagnetic waves from the back surface side of the second substrate in a remaining state and heating the adhesive resin layer on the second substrate. Transfer method of electronic parts. 2. The method according to claim 1, wherein the adhesive layer on the second substrate is selectively heated, and the electronic components arranged on the first substrate are selectively transferred onto the second substrate. Item 6. The method for transferring an electronic component according to Item 1. 3. The method according to claim 1, wherein the electromagnetic wave is a laser beam. 4. The method according to claim 1, wherein the processing residue is a processing residue generated when dicing the electronic component. 5. The method according to claim 1, wherein the processing residue is a processing residue generated when the electronic component is peeled off by ablation. 6. The method according to claim 1, wherein the electronic component is formed by embedding a functional element in an insulating material. 7. The method according to claim 1, wherein the adhesive resin layer is made of a thermoplastic adhesive resin. 8. The method according to claim 1, wherein the adhesive resin layer is made of a thermosetting adhesive resin. 9. A method for arranging elements arranged on a second substrate such that the elements arranged on a first substrate are spaced apart from a state where the elements are arranged on the first substrate. A step of solidifying the element with a resin, a step of dicing the resin to separate each element to form a resin-formed chip, and a transfer step of transferring the resin-formed chip. In a state where the processing residue of the previous process remains on the surface of the formed chip, the resin-formed chip is transferred to the back side of the substrate to which the resin-formed chip is transferred, and the adhesive resin layer on the substrate is selectively heated by laser light irradiation. A resin forming chip to be fixed to the substrate. 10. The element arrangement method according to claim 9, wherein processing residues remaining on the surface of the resin-formed chip are processing residues during the dicing. 11. A first transfer step of transferring the element so that the element is separated from a state in which the elements are arranged on the first substrate and holding the element on a temporary holding member; A step of solidifying the element held by the temporary holding member with a resin, a step of dicing the resin to separate each element to form a resin-formed chip, and a step of forming a resin-formed chip held by the temporary holding member. A second transfer step of transferring the element onto the second substrate so that the elements are further separated from each other. In the second transfer step, the second transfer step is performed in a state where the processing residue of the previous step remains on the surface of the resin-formed chip. 10. The method according to claim 9, wherein the adhesive resin layer on the second substrate is selectively heated by irradiating a laser beam from the back side of the substrate, and the resin-forming chip to be transferred is fixed to the second substrate. Element arrangement method. 12. The distance to be separated in the first transfer step is substantially an integral multiple of the pitch of the elements arranged on the first substrate, and the distance to be separated in the second transfer step is the first transfer. 12. The element arrangement method according to claim 11, wherein a pitch of the element arranged in the temporary holding member in the step is substantially an integral multiple of the pitch. 13. The method according to claim 9, wherein the device is a semiconductor device using a nitride semiconductor. 14. The light emitting device, a liquid crystal control device,
The element array according to claim 9, wherein the element is an element selected from a photoelectric conversion element, a piezoelectric element, a thin film transistor element, a thin film diode element, a resistance element, a switching element, a micromagnetic element, and a microoptical element or a part thereof. Method. 15. A light emitting element arranged on a first substrate is rearranged on a second substrate so as to be separated from a state where the light emitting elements are arranged on the first substrate. In a method of manufacturing an image display device arranged in a matrix, a step of hardening the light emitting element with a resin, a step of dicing the resin to separate the light emitting elements into light emitting elements to form a resin formed chip, and transferring the resin formed chip The transfer step includes irradiating a laser beam from the back side of the substrate to which the resin-formed chip is transferred in a state where the processing residue of the previous step remains on the surface of the resin-formed chip. Wherein the adhesive resin layer is selectively heated to fix a resin-forming chip to be transferred to the substrate. 16. The method according to claim 15, wherein processing residues remaining on the surface of the resin-formed chip are processing residues during the dicing. 17. A first transfer step of transferring the light emitting elements so that the light emitting elements are separated from a state where the light emitting elements are arranged on the first substrate and holding the light emitting elements on a temporary holding member. Solidifying the light-emitting element held by the temporary holding member with a resin, dicing the resin to separate each light-emitting element to form a resin-formed chip, and holding the light-emitting element held by the temporary holding member. A second transfer step of transferring the resin formed chip onto the second substrate such that the light emitting element is further separated, wherein the second transfer step includes processing residues of a previous step remaining on the surface of the resin formed chip. In this state, the adhesive resin layer on the second substrate is selectively heated by irradiating a laser beam from the back surface side of the second substrate, and the resin forming chip to be transferred is fixed to the second substrate. An image table according to claim 15. Manufacturing method of a display device.