JP2003332523A - Transferring method and arraying method for element, and manufacturing method for image display device - Google Patents

Transferring method and arraying method for element, and manufacturing method for image display device

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Publication number
JP2003332523A
JP2003332523A JP2002143076A JP2002143076A JP2003332523A JP 2003332523 A JP2003332523 A JP 2003332523A JP 2002143076 A JP2002143076 A JP 2002143076A JP 2002143076 A JP2002143076 A JP 2002143076A JP 2003332523 A JP2003332523 A JP 2003332523A
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Japan
Prior art keywords
adhesive
light emitting
substrate
transferring
adhesive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2002143076A
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Japanese (ja)
Inventor
Masaru Minami
勝 南
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Sony Corp
Original Assignee
Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2002143076A priority Critical patent/JP2003332523A/en
Publication of JP2003332523A publication Critical patent/JP2003332523A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a transferring method for an element by which the element is precisely, simply and selectively transferred, and to provide an arraying method for the element and a manufacturing method for an image display device. <P>SOLUTION: This transferring method for the element comprises: a light irradiation step for selectively irradiating an adhesive agent layer with light to form an adhesive region and a non-adhesive region; and a transfer step for selectively transferring the element transferred to the adhesive region. By forming a region irradiated with UV rays and a region not irradiated, a pattern of the non-adhesive region having no adhesion and the adhesive region keeping adhesion is precisely and freely formed on the same flat surface. So that, by forming the adhesive region in accordance with a position of the element to be transferred, the element is selectively transferred to the surface of the adhesive agent layer. <P>COPYRIGHT: (C)2004,JPO

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【発明の属する技術分野】本発明は、素子の転写方法、
素子の配列方法及び画像表示装置の製造方法に関する。
さらに詳しくは、選択的に素子を転写することができる
素子の転写方法、素子の配列方法及び画像表示装置の製
造方法に関する。TECHNICAL FIELD The present invention relates to a device transfer method,
The present invention relates to a method of arranging elements and a method of manufacturing an image display device.
More specifically, the present invention relates to an element transfer method capable of selectively transferring elements, an element array method, and an image display device manufacturing method.

【０００２】[0002]

【従来の技術】発光素子をマトリクス状に配列して画像
表示装置に組み上げる場合には、従来、液晶表示装置
（ＬＣＤ：Liquid Crystal Display）やプラズマディス
プレイパネル（ＰＤＰ：Plasma Display Panel）のよう
に基板上に直接素子を形成するか、あるいは発光ダイオ
ードディスプレイ（ＬＥＤディスプレイ）のように単体
のＬＥＤパッケージを配列することが行われている。例
えば、ＬＣＤ、ＰＤＰの如き画像表示装置においては、
素子分離ができないために、製造プロセスの当初から各
素子はその画像表示装置の画素ピッチだけ間隔を空けて
形成することが通常行われている。2. Description of the Related Art When light emitting elements are arranged in a matrix and assembled into an image display device, conventionally, a substrate such as a liquid crystal display device (LCD: Liquid Crystal Display) or a plasma display panel (PDP: Plasma Display Panel) is used. It has been practiced to form the device directly on top or to arrange a single LED package such as a light emitting diode display (LED display). For example, in an image display device such as LCD and PDP,
Since the elements cannot be separated from each other, it is common practice to form the elements at intervals of the pixel pitch of the image display device from the beginning of the manufacturing process.

【０００３】一方、ＬＥＤディスプレイの場合には、Ｌ
ＥＤチップをダイシング後に取り出し、個別にワイヤー
ボンドもしくはフリップチップによるバンプ接続により
外部電極に接続し、パッケージ化されることが行われて
いる。この場合、パッケージ化の前もしくは後に画像表
示装置としての画素ピッチに配列されるが、この画素ピ
ッチは素子形成時の素子のピッチとは無関係とされる。On the other hand, in the case of an LED display, L
The ED chip is taken out after dicing, individually connected to external electrodes by wire bonding or bump connection by flip chip, and packaged. In this case, the pixels are arranged at a pixel pitch as an image display device before or after packaging, and this pixel pitch is independent of the element pitch at the time of element formation.

【０００４】発光素子であるＬＥＤ（発光ダイオード）
は高価である為、１枚のウエハから数多くのＬＥＤチッ
プを製造することによりＬＥＤを用いた画像表示装置を
低コストにできる。すなわち、ＬＥＤチップの大きさを
従来約３００μｍ角のものを数十μｍ角のＬＥＤチップ
にして、それを接続して画像表示装置を製造すれば画像
表示装置の価格を下げることができる。LED (light emitting diode) which is a light emitting element
Is expensive, it is possible to reduce the cost of the image display device using LEDs by manufacturing many LED chips from one wafer. That is, the price of the image display device can be reduced by changing the conventional LED chip size of about 300 μm square to an LED chip of several tens μm square and connecting the LED chips to manufacture the image display device.

【０００５】[0005]

【発明が解決しようとする課題】ところで、上記画像表
示装置を製造するに際して、密に配置された発光素子を
所定の間隔で離間させる工程では、例えば素子を転写さ
せる領域に合わせて接着剤を基板等に塗布して接着剤層
を形成し、この接着剤層に素子を接着することにより素
子を所定の間隔で離間するように選択的に転写すること
ができる。このとき、接着剤をスクリーン印刷法などに
より基板にパターニングし、素子が転写される接着領域
である接着剤層と、発光素子が転写されない非接着領域
とを形成する。By the way, in manufacturing the above-mentioned image display device, in the step of separating the densely arranged light emitting elements at a predetermined interval, for example, an adhesive is applied to the substrate in accordance with the area to which the elements are transferred. It is possible to selectively transfer the elements so that the elements are separated from each other at a predetermined interval by coating the same with an adhesive layer to form an adhesive layer and adhering the element to the adhesive layer. At this time, the adhesive is patterned on the substrate by a screen printing method or the like to form an adhesive layer which is an adhesive region to which the element is transferred and a non-adhesive region to which the light emitting element is not transferred.

【０００６】しかし、接着剤層を形成するために基板に
塗布する接着剤は、基板に塗布された状態で接着剤層を
形成することができる程度の高い粘度を有しており、基
板に精度良く接着剤層をパターニングし、且つ一定の膜
厚となるように印刷することが困難となる場合がある。
また樹脂を塗布することにより形成される接着剤層の表
面と樹脂が塗布されない基板の表面との間には接着剤層
の膜厚に相当する段差が生じてしまう。従って、パター
ニング精度が十分でないこと、膜厚の不均一性及び接着
剤層の表面と基板の表面との間に生じる段差により、素
子を転写するに際して素子の位置ずれが生じてしまう場
合がる。However, the adhesive applied to the substrate in order to form the adhesive layer has such a high viscosity that the adhesive layer can be formed in the state where it is applied to the substrate, and the accuracy of the substrate is high. In some cases, it may be difficult to pattern the adhesive layer well and to print so as to have a constant film thickness.
Further, a step corresponding to the film thickness of the adhesive layer is formed between the surface of the adhesive layer formed by applying the resin and the surface of the substrate on which the resin is not applied. Therefore, the patterning accuracy may not be sufficient, the film thickness may be non-uniform, and the step between the surface of the adhesive layer and the surface of the substrate may cause a displacement of the element when transferring the element.

【０００７】よって、本発明は上記の問題点を鑑み、精
度良く且つ簡便に選択的に素子を転写することができる
素子の転写方法、素子の配列方法及び画像表示装置の製
造方法を提供することを目的とする。Therefore, in view of the above problems, the present invention provides an element transfer method, an element arranging method and an image display apparatus manufacturing method capable of selectively and accurately transferring elements selectively. With the goal.

【０００８】[0008]

【課題を解決するための手段】本発明の素子の転写方法
は、接着剤層に光を選択的に照射して接着領域と非接着
領域とを形成する光照射工程と、転写対象となる素子を
前記接着領域に選択的に転写する転写工程とを有するこ
とを特徴とする。A device transfer method according to the present invention comprises a light irradiation step of selectively irradiating an adhesive layer with light to form a bonded region and a non-bonded region, and a device to be transferred. Is selectively transferred to the adhesive area.

【０００９】接着剤層は、紫外光（ＵＶ光）を照射する
ことにより硬化するＵＶ硬化型樹脂からなる接着剤によ
り形成され、ＵＶ光を照射することにより接着剤層の表
面のみが硬化されて粘着性が消失する。よって、ＵＶ光
を照射する領域と照射しない領域とを形成することによ
り、粘着性を有しない非接着領域と粘着性が維持された
接着領域とのパターンを同一平面に精度良く且つ自在に
形成することができる。従って、転写対象となる素子の
位置に合わせて接着領域を形成することにより、接着剤
層の表面に選択的に素子を転写することが可能となる。The adhesive layer is formed of an adhesive made of a UV curable resin which is cured by irradiating with ultraviolet light (UV light), and only the surface of the adhesive layer is cured by irradiating with UV light. The tackiness disappears. Therefore, by forming a region that is irradiated with UV light and a region that is not irradiated with UV light, a pattern of a non-adhesive region that does not have tackiness and an adhesive region that maintains tackiness can be formed accurately and freely on the same plane. be able to. Therefore, it is possible to selectively transfer the element to the surface of the adhesive layer by forming the adhesive region in accordance with the position of the element to be transferred.

【００１０】さらに、本発明の素子の配列方法は、第一
基板上に配列された複数の素子を第二基板上に再配列す
る素子の配列方法において、前記第一基板上で前記素子
が配列された状態よりは離間した状態となるように前記
素子を転写して一時保持用部材に当該素子を保持させる
第一転写工程と、前記第一時保持用部材に保持された前
記素子をさらに離間して前記第二基板上に転写する第二
転写工程とを有し、前記第一転写工程においては、前記
一時保持用部材に接着剤層を形成するとともに、前記接
着剤層に光を選択的に照射することにより接着領域と非
接着領域とを形成し、前記接着領域に転写対象となる素
子を転写することを特徴とする。かかる構成により素子
を離間させるように転写するに際して、転写先である接
着剤層に選択的に接着領域を形成することができる。Further, the element arranging method of the present invention is an element arranging method of rearranging a plurality of elements arranged on a first substrate on a second substrate, wherein the elements are arranged on the first substrate. The first transfer step in which the element is transferred so that the element is held apart from the held state and the element is held in the temporary holding member, and the element held in the temporary holding member is further separated. And a second transfer step of transferring the light onto the second substrate. In the first transfer step, an adhesive layer is formed on the temporary holding member, and light is selectively applied to the adhesive layer. The adhesive area and the non-adhesive area are formed by irradiating the substrate, and the element to be transferred is transferred to the adhesive area. With such a structure, when the elements are transferred so as to be separated from each other, the adhesive region can be selectively formed in the adhesive layer that is the transfer destination.

【００１１】また、本発明の画像表示装置の製造方法
は、発光素子をマトリクス状に配置した画像表示装置の
製造方法において、前記第一基板上で前記発光素子が配
列された状態よりは離間した状態となるように前記発光
素子を転写して一時保持用部材に当該発光素子を保持さ
せる第一転写工程と、前記一時保持用部材に保持された
前記発光素子をさらに離間して前記第二基板上に転写す
る第二転写工程を有し、前記第一転写工程においては、
前記一時保持用部材に接着剤層を形成するとともに、前
記接着剤層に光を選択的に照射することにより接着領域
と非接着領域とを形成し、前記接着領域に転写対象とな
る素子を転写することを特徴とする。上記素子の配列方
法を応用することにより素子の転写が効率的且つ確実に
行われるので、素子間の距離を大きくする拡大転写を円
滑に実施することができる。The method of manufacturing an image display device according to the present invention is the method of manufacturing an image display device in which light emitting elements are arranged in a matrix, and is separated from a state in which the light emitting elements are arranged on the first substrate. A second transfer step in which the light emitting element is transferred so that the light emitting element is held in the temporary holding member and the light emitting element held in the temporary holding member is further separated from the second substrate. There is a second transfer step of transferring onto the above, in the first transfer step,
An adhesive layer is formed on the temporary holding member, and an adhesive area and a non-adhesive area are formed by selectively irradiating the adhesive layer with light, and an element to be transferred is transferred to the adhesive area. It is characterized by doing. By applying the above-described element arrangement method, the transfer of the elements is efficiently and surely performed, so that the enlarged transfer for increasing the distance between the elements can be smoothly performed.

【００１２】[0012]

【発明の実施の形態】以下図面を参照しながら、本発明
の素子の転写方法を説明した後、これを応用した素子の
配列方法及び画像表示装置の製造方法について順次説明
する。BEST MODE FOR CARRYING OUT THE INVENTION A method for transferring elements according to the present invention will be described below with reference to the drawings, and then a method for arranging elements and a method for manufacturing an image display device to which the method is applied will be sequentially described.

【００１３】先ず、図１乃至図５を参照しながら、本発
明の素子の転写方法について説明する。図１に示すよう
に、基板２に接着剤を塗布して接着剤層１を形成する。
基板２は、例えば外形が□４０ｍｍ、厚み１ｍｍを有す
るガラス基板とされるが、基板のサイズ及び基板を形成
する材質は本例のガラス基板に限定されず、基板２を形
成する材料は、例えば金属、樹脂、紙などの粘度が比較
的高い接着剤を塗布することができる材料であれば如何
なるものでも良い。また、ガラス基板のような平面基板
ではなく、テープなどの変形自在とされる部材を基板と
することもできる。First, the transfer method of the element of the present invention will be described with reference to FIGS. As shown in FIG. 1, an adhesive is applied to the substrate 2 to form the adhesive layer 1.
The substrate 2 is, for example, a glass substrate having an outer shape of □ 40 mm and a thickness of 1 mm, but the size of the substrate and the material forming the substrate are not limited to the glass substrate of this example, and the material forming the substrate 2 is, for example, Any material that can be applied with an adhesive having a relatively high viscosity, such as metal, resin, or paper, may be used. Further, instead of a flat substrate such as a glass substrate, a deformable member such as a tape may be used as the substrate.

【００１４】接着剤層１は、ＵＶ硬化型樹脂と熱硬化型
樹脂との両方の性質を有する樹脂からなる接着剤を塗布
することにより形成される。接着剤を構成する樹脂とし
ては、例えばエポキシ樹脂を用いることができる。特
に、エポキシ樹脂は、ＵＶ光の未照射部の加熱硬化も可
能であるとともに、耐薬品性にも優れている。また、接
着剤を構成する樹脂は、エポキシ樹脂に限定されず、例
えばアクリルオリゴマーを主剤としたアクリル樹脂、エ
ポキシ樹脂及びホットメルト・シリコーン樹脂でも良
い。さらに、接着剤層１を略均一の膜厚となるように形
成し、後工程で容易に素子を接着可能とするためには、
接着剤を構成する主剤である樹脂と硬化剤とが予め混合
された一液タイプの接着剤が好適である。The adhesive layer 1 is formed by applying an adhesive made of a resin having the properties of both a UV curable resin and a thermosetting resin. As the resin that constitutes the adhesive, for example, an epoxy resin can be used. In particular, the epoxy resin is capable of heat-curing a portion not irradiated with UV light and is also excellent in chemical resistance. The resin forming the adhesive is not limited to the epoxy resin, and may be, for example, an acrylic resin containing an acrylic oligomer as a main component, an epoxy resin, or a hot melt silicone resin. Furthermore, in order to form the adhesive layer 1 so as to have a substantially uniform film thickness so that the element can be easily adhered in a later step,
A one-pack type adhesive in which a resin, which is a main component of the adhesive, and a curing agent are mixed in advance is suitable.

【００１５】接着剤層１を形成するに際しては、スピン
コータにより基板２に接着剤を塗布して略均一な接着剤
層１を形成することができる。接着剤層１を形成する接
着剤として、ＵＶ硬化型樹脂と熱硬化型樹脂との両方の
性質を有する接着剤であるＥＭＩ社製７１２−８５−２
０Ｋを用いた場合には、スピンコータの回転数を２００
０ｒｐｍに設定し、スピンコータにより接着剤を塗布す
る時間である回転時間を６０秒間にして接着剤を基板２
に塗布することにより、接着剤層１の膜厚が２０μｍ程
度となるように略均一に形成することができる。このと
き、接着剤の粘度は２００００ｃｐｓ程度であり、スピ
ンコータを用いることによりスクリーン印刷等の他の接
着剤塗布方法と比較して比較的粘度の高い接着剤でも略
均一な膜厚を有する接着剤層１を形成することが可能と
なる。また、接着剤層１を形成する接着剤は本例で用い
るものに限定されず、各種接着剤に応じて接着剤層１を
形成する際の各種工程条件であるスピンコータの回転
数、回転時間等のスピンコータによる塗布条件等を変更
することにより接着剤層１の膜厚を略均一とすることが
可能となる。When forming the adhesive layer 1, it is possible to apply the adhesive to the substrate 2 with a spin coater to form a substantially uniform adhesive layer 1. 712-85-2 manufactured by EMI Co., which is an adhesive having properties of both a UV curable resin and a thermosetting resin as an adhesive forming the adhesive layer 1.
When 0K is used, the spin coater rotation speed is 200
The adhesive is applied to the substrate 2 by setting the rotation speed to 0 rpm and setting the rotation time of 60 seconds for applying the adhesive using the spin coater.
The adhesive layer 1 can be formed substantially uniformly so that the thickness of the adhesive layer 1 becomes about 20 μm. At this time, the viscosity of the adhesive is about 20000 cps, and by using the spin coater, an adhesive layer having a substantially uniform film thickness even with an adhesive having a relatively high viscosity as compared with other adhesive application methods such as screen printing. 1 can be formed. Further, the adhesive forming the adhesive layer 1 is not limited to that used in this example, and various process conditions for forming the adhesive layer 1 according to various adhesives are the spin coater rotation speed, rotation time, etc. The film thickness of the adhesive layer 1 can be made substantially uniform by changing the coating conditions and the like by the spin coater.

【００１６】続いて図２に示すように、紫外光（ＵＶ
光）Ｌを選択的に接着剤層１に照射する。接着剤層１の
表面全体は粘着性を有しており、接着剤層１の所定の領
域のみを硬化させて粘着力を低下させる為にパターンマ
スク３を介して接着剤層１にＵＶ光Ｌを照射する。パタ
ーンマスク３には、接着剤層１に形成する接着領域と非
接着領域とのパターンに合わせてパターン３ａが形成さ
れており、パターン３ａを通過するＵＶ光Ｌのみが接着
剤層１に到達する。また、照射するＵＶ光Ｌの波長は、
例えば波長が３２０乃至３８０ｎｍ程度であり、ＵＶ光
Ｌにより接着剤層１に供給されるエネルギー密度は８０
００ｍＪ／ｍｍ２程度とされる。Then, as shown in FIG.
Light) L is selectively applied to the adhesive layer 1. The entire surface of the adhesive layer 1 has adhesiveness, and UV light L is applied to the adhesive layer 1 through the pattern mask 3 in order to cure only a predetermined region of the adhesive layer 1 and reduce the adhesive strength. Irradiate. A pattern 3a is formed on the pattern mask 3 in accordance with the pattern of the adhesive region and the non-adhesive region formed on the adhesive layer 1, and only the UV light L passing through the pattern 3a reaches the adhesive layer 1. . Further, the wavelength of the UV light L to be radiated is
For example, the wavelength is about 320 to 380 nm, and the energy density supplied to the adhesive layer 1 by the UV light L is 80.
It is set to about 00 mJ / mm 2 .

【００１７】図３は、パターン３ａを通過したＵＶ光Ｌ
により選択的にＵＶ光Ｌが照射されて粘着性が消失した
非接着領域１ａと、ＵＶ光Ｌが照射されずに粘着性を保
持したままの状態である接着領域１ｂとが形成された接
着剤層１の状態を示す図である。パターンマスク３を通
してＵＶ光を照射することにより、パターン３ａに応じ
てＵＶ光Ｌが照射される領域と照射されない領域とを形
成することができ、粘着性が消失した非接着領域１ａ
と、粘着性が保持された接着領域１ｂとをパターニング
することができる。従って、接着剤層１を形成するに際
して、予め基板２の所定の領域のみに接着剤層をパター
ニングして形成することなく、一括して基板２全体に接
着剤層１を形成した後に接着領域１ｂと非接着領域１ａ
とを形成することができる。FIG. 3 shows the UV light L which has passed through the pattern 3a.
Adhesive formed with a non-adhesive region 1a that is selectively irradiated with UV light L and loses its adhesiveness, and an adhesive region 1b that is not irradiated with UV light L and remains adhesive. It is a figure which shows the state of the layer 1. By irradiating the UV light through the pattern mask 3, it is possible to form a region irradiated with the UV light L and a region not irradiated with the UV light L according to the pattern 3a, and the non-adhesive region 1a where the adhesiveness disappears.
It is possible to pattern the adhesive region 1b having adhesiveness. Therefore, when the adhesive layer 1 is formed, the adhesive layer 1 is collectively formed on the entire substrate 2 after the adhesive layer 1 is collectively formed on the substrate 2 without patterning and forming the adhesive layer only on a predetermined region of the substrate 2. And non-bonded area 1a
Can be formed.

【００１８】さらに、基板２全体に形成された接着剤層
１に選択的にＵＶ光Ｌを照射して接着領域１ｂと非接着
領域１ａとを形成することにより、接着領域１ｂの表面
と非接着領域１ａの表面とを面一とすることが可能とな
る。従って、基板の所定の領域にのみ接着剤層を形成す
るに際して接着剤層の表面と、接着剤層が形成されない
基板の表面との間に接着剤層の膜厚分に相当する段差が
生じることがない。よって、転写対象となる素子を接着
剤層に当接させるに際して、段差による素子の位置ずれ
などが生じることがなく、精度良く素子などを接着領域
に接着することが可能となる。Further, by selectively irradiating the adhesive layer 1 formed on the entire substrate 2 with UV light L to form the adhesive region 1b and the non-adhesive region 1a, the adhesive layer 1 is not adhered to the surface of the adhesive region 1b. It is possible to make the surface of the region 1a flush. Therefore, when the adhesive layer is formed only in a predetermined area of the substrate, a step corresponding to the thickness of the adhesive layer may be formed between the surface of the adhesive layer and the surface of the substrate on which the adhesive layer is not formed. There is no. Therefore, when the element to be transferred is brought into contact with the adhesive layer, the element is not displaced due to a step, and the element or the like can be accurately bonded to the bonding area.

【００１９】また、転写対象となる素子の配置に応じて
パターン３ａが形成されたパターンマスク３を介して接
着剤層１にＵＶ光Ｌを照射することにより、簡便に接着
領域１ｂと非接着領域１ａとを形成することができる。
また、微小なサイズを有する素子を精度良く接着剤層１
の所定の領域に接着するに際しては、接着剤を素子のサ
イズ及び選択的に転写する間隔に合わせて接着剤を精度
良くパターニングして接着剤層を形成することが困難な
場合もある。特に、汎用の接着剤により微細な間隔で接
着剤層を形成した場合、精度良くパターニングされた接
着剤層が接着剤のダレなどによりパターンを保持するこ
とが困難となる。また、製造工程で接着剤層が形成され
た基板を搬送するに際しては、振動などにより接着剤層
のパターンを保持することはさらに困難となる。よっ
て、基板２の表面全体に一括して接着剤層１を形成した
後、ＵＶ光Ｌを接着剤層１に選択的に照射して接着剤層
１の粘着性が消失した非接着領域１ａを形成することに
より、ＵＶ光Ｌが照射されなかった残りの領域を接着領
域１ｂとし、同一平面に精度良く接着領域１ｂをパター
ニングすることができる。Further, by irradiating the adhesive layer 1 with UV light L through the pattern mask 3 having the pattern 3a formed according to the arrangement of the elements to be transferred, the adhesive region 1b and the non-adhesive region can be simply and conveniently. 1a can be formed.
In addition, an element having a minute size can be used for the adhesive layer 1 with high accuracy.
In the case of adhering to the predetermined area of the above, it may be difficult to form the adhesive layer by accurately patterning the adhesive according to the size of the element and the interval at which it is selectively transferred. In particular, when the adhesive layer is formed at a fine interval with a general-purpose adhesive, it becomes difficult for the adhesive layer that is accurately patterned to hold the pattern due to the sagging of the adhesive. Further, when the substrate on which the adhesive layer is formed is transported in the manufacturing process, it becomes more difficult to hold the pattern of the adhesive layer due to vibration or the like. Therefore, after the adhesive layer 1 is collectively formed on the entire surface of the substrate 2, the adhesive layer 1 is selectively irradiated with UV light L to remove the non-adhesive region 1a in which the adhesiveness of the adhesive layer 1 is lost. By forming the bonding area 1b, the remaining area not irradiated with the UV light L can be used as the bonding area 1b, and the bonding area 1b can be accurately patterned on the same plane.

【００２０】また、ＵＶ光Ｌを照射することにより硬化
された非接着領域１ａは接着剤層１の表層であり、非接
着領域１ａの下側である接着剤層１の内部はＵＶ光Ｌに
より硬化されない。図３には、接着剤層１の表層のみが
硬化された状態を示したが、接着剤層１の膜厚が十分に
薄い場合には表層だけでなく接着剤層１の内部まで硬化
させることも可能である。The non-adhesive region 1a cured by irradiating the UV light L is the surface layer of the adhesive layer 1, and the inside of the adhesive layer 1 below the non-adhesive region 1a is exposed to the UV light L. Not cured. FIG. 3 shows a state where only the surface layer of the adhesive layer 1 is cured. However, when the film thickness of the adhesive layer 1 is sufficiently thin, not only the surface layer but also the inside of the adhesive layer 1 should be cured. Is also possible.

【００２１】図４は、素子５に接着剤層１を当接させた
状態を説明する図である。接着領域１ｂに接着させる素
子５は基板４に直接形成された素子でも良く、また基板
４とは別の基板上で形成された後基板４に配置された素
子であっても良い。また、素子５を接着領域１ｂに接着
させるためには、素子５が接着領域１ｂに接する接着面
が略平坦な面であることが望ましいが、素子５の接着領
域１ｂに接する領域は略平坦な面に限定されず、例えば
凹凸形状、曲面形状及び尖頭形状であっても良い。素子
５の接着領域１ｂに接する領域が略平坦な面ではない場
合には、硬化されていない接着領域１ｂに素子５を押し
込むことにより接着するとともに固定することが可能と
なる。このとき、非接着領域１ａの表層は硬化状態とさ
れており、接着剤層１と素子５とを対面させるに際して
接着領域１ｂに対して素子５の位置がずれた状態で接着
剤層１と素子５とを当接させたとしても、硬化された非
接着領域１ａに素子５が押し込まれることがない。従っ
て、非接着領域１ａに素子５が接着されることを低減す
ることができ、硬化されていない接着領域１ｂに対面す
るように素子５が位置あわせされた状態のときのみ素子
５を接着領域１ｂに接着することができる。FIG. 4 is a view for explaining a state in which the adhesive layer 1 is brought into contact with the element 5. The element 5 to be adhered to the adhesion region 1b may be an element directly formed on the substrate 4, or may be an element formed on a substrate different from the substrate 4 and then arranged on the substrate 4. Further, in order to bond the element 5 to the bonding area 1b, it is desirable that the bonding surface of the element 5 contacting the bonding area 1b is a substantially flat surface, but the area of the element 5 contacting the bonding area 1b is substantially flat. The shape is not limited to the surface, and may be, for example, an uneven shape, a curved shape, or a pointed shape. When the region of the element 5 in contact with the bonding region 1b is not a substantially flat surface, the device 5 can be bonded and fixed by being pushed into the uncured bonding region 1b. At this time, the surface layer of the non-adhesive region 1a is in a cured state, and when the adhesive layer 1 and the element 5 are faced to each other, the adhesive layer 1 and the element 5 are displaced from each other with respect to the adhesive region 1b. Even if they are brought into contact with each other, the element 5 is not pushed into the hardened non-bonding area 1a. Therefore, it is possible to reduce the adhesion of the element 5 to the non-adhesion area 1a, and to attach the element 5 to the adhesion area 1b only when the element 5 is aligned so as to face the uncured adhesion area 1b. Can be glued to.

【００２２】さらに、素子５の転写先である接着領域１
ｂを転写対象となる素子５の間隔に合わせたパターンに
パターニングしておくことにより、基板４上に所定の間
隔で配列された素子５を精度良く接着領域１ｂに当接さ
せ、接着することができる。また、素子５が基板４に所
定の間隔で配列されている場合に限定されず、ランダム
に配置されている場合でも、パターニングされた接着領
域１ｂに素子５を当接させることにより、素子５を選択
的に転写することができる。Furthermore, the adhesive area 1 to which the element 5 is transferred
By patterning b in a pattern matching the interval of the elements 5 to be transferred, the elements 5 arranged at a predetermined interval on the substrate 4 can be accurately brought into contact with the adhesion region 1b and adhered. it can. In addition, the elements 5 are not limited to being arranged on the substrate 4 at a predetermined interval, and even if the elements 5 are randomly arranged, the elements 5 are brought into contact with the patterned bonding region 1b so that the elements 5 are contacted with each other. It can be selectively transferred.

【００２３】また、接着剤層１の膜厚に応じて、適用な
エネルギー密度でＵＶ光Ｌを照射することにより接着剤
層１の内部まで硬化させることが可能であるが、接着剤
層１の膜厚が厚いために表層のみが硬化可能である場合
には、接着剤層１を加熱することにより接着剤層１全体
を硬化させることができる。例えば本例の接着剤（ＥＭ
Ｉ社製 ７１２−８５−２０Ｋ）の場合、接着剤層１を
１１０℃で２０分程度加熱することにより、接着剤層１
の内部まで硬化させることが可能である。接着剤層１全
体を硬化させるに際しては、例えば循環型のオーブンに
より接着剤層１全体を加熱することができ、接着剤層１
を硬化させることにより接着領域１ｂに素子５を固着さ
せることができる。さらに、接着材層１全体を固めるこ
とができ、接着領域１ｂに固着された素子５の位置ずれ
を低減することが可能となる。接着剤層１を加熱して硬
化するに際しては、素子５を接着領域１ｂに接着した後
基板４から素子５を離間させた状態で接着剤層１を加熱
しても良く、また、接着領域１ｂに素子５を接着させた
後基板４から素子５を離間させる前に接着剤層１を加熱
して硬化することもできる。よって、精度良くパターニ
ングされた接着領域１ｂに素子５を接着した後に接着剤
層１全体を硬化させることにより、接着剤層１の変形に
よる素子５の位置ずれも低減することが可能となり、精
度良く素子５を転写することができる。Further, according to the film thickness of the adhesive layer 1, it is possible to cure the inside of the adhesive layer 1 by irradiating the UV light L with an applicable energy density. When only the surface layer can be cured due to the large film thickness, the entire adhesive layer 1 can be cured by heating the adhesive layer 1. For example, the adhesive (EM
In the case of I company 712-85-20K), the adhesive layer 1 is heated by heating the adhesive layer 1 at 110 ° C. for about 20 minutes.
It is possible to cure the inside of the. When curing the entire adhesive layer 1, the entire adhesive layer 1 can be heated by, for example, a circulation type oven.
The element 5 can be fixed to the adhesion region 1b by curing the. Furthermore, the entire adhesive material layer 1 can be solidified, and the positional displacement of the element 5 fixed to the adhesive region 1b can be reduced. When the adhesive layer 1 is heated and cured, the adhesive layer 1 may be heated in a state where the element 5 is separated from the substrate 4 after the element 5 is bonded to the adhesive area 1b. It is also possible to heat and cure the adhesive layer 1 after the element 5 is bonded to the substrate and before the element 5 is separated from the substrate 4. Therefore, by curing the entire adhesive layer 1 after adhering the element 5 to the adhesion region 1b which is patterned with high accuracy, it is possible to reduce the positional deviation of the element 5 due to the deformation of the adhesive layer 1, and it is possible to accurately The element 5 can be transferred.

【００２４】図５は、素子５を基板４から離間させた状
態を示す図である。接着剤層１ｃは、素子５が選択的に
転写された状態で接着剤層１を硬化することにより形成
され、素子５が固着された状態で基板４から素子５を離
間させる。素子５が接着剤層１ｃに固着されていること
により、素子５を基板４から離間させるに際しても素子
５の位置ずれが生じることは殆どない。FIG. 5 is a view showing a state in which the element 5 is separated from the substrate 4. The adhesive layer 1c is formed by curing the adhesive layer 1 in a state where the element 5 is selectively transferred, and separates the element 5 from the substrate 4 in a state where the element 5 is fixed. Since the element 5 is fixed to the adhesive layer 1c, the positional deviation of the element 5 hardly occurs even when the element 5 is separated from the substrate 4.

【００２５】また、接着剤層の表面に面一になるように
接着領域と非接着領域とを自在に形成することができ、
且つこれら接着領域と非接着領域との間で段差を生じさ
せることにより、精度良く素子を選択的に転写すること
が可能となる。Further, the adhesive region and the non-adhesive region can be freely formed so as to be flush with the surface of the adhesive layer,
Moreover, it is possible to selectively and accurately transfer the element by forming a step between the adhesive area and the non-adhesive area.

【００２６】続いて、本発明の素子の転写方法を応用し
た素子の配列方法及び画像表示装置の製造方法について
図面を参照しながら詳細に説明する。Next, a method of arranging elements and a method of manufacturing an image display device to which the element transfer method of the present invention is applied will be described in detail with reference to the drawings.

【００２７】最初に、本発明の素子の転写方法を応用す
ることができる二段階拡大転写法による素子の配列方法
の基本的な構成について説明する。二段階拡大転写法に
よる素子の配列方法は、高集積度をもって第一基板上に
作成された素子を第一基板上で素子が配列された状態よ
りは離間した状態となるように一時保持用部材に転写
し、次いで一時保持用部材に保持された前記素子をさら
に離間して第二基板上に転写する二段階の拡大転写を行
う。尚、本例では転写を２段階としているが、素子を離
間して配置する拡大度に応じて転写を三段階やそれ以上
の多段階とすることもできる。尚、本例では発光素子を
配列する工程について説明するが、配列される素子は発
光素子に限定されず、その他の能動素子、受動素子また
は複数の素子が一体とされた複合素子でも良い。First, the basic structure of the element arranging method by the two-step expansion transfer method to which the element transfer method of the present invention can be applied will be described. The element arranging method by the two-step expansion transfer method is a temporary holding member so that the elements formed on the first substrate with a high degree of integration are separated from the state in which the elements are arranged on the first substrate. Then, two-step enlargement transfer is performed in which the element held by the temporary holding member is further separated and transferred to the second substrate. Although the transfer is performed in two steps in this example, the transfer can be performed in three steps or in multiple steps depending on the degree of enlargement in which the elements are arranged apart from each other. Although the process of arranging the light emitting elements is described in this example, the elements to be arranged are not limited to the light emitting elements, and other active elements, passive elements, or composite elements in which a plurality of elements are integrated may be used.

【００２８】図６は二段階拡大転写法の基本的な工程を
示す図であり、まず、図６（ａ）に示す第一基板１０上
に、例えば発光素子の如き素子１２を密に形成する。素
子を密に形成することで、各基板当たりに生成される素
子の数を多くすることができ、製品コストを下げること
ができる。第一基板１０は例えば半導体ウエハ、ガラス
基板、石英ガラス基板、サファイア基板、プラスチック
基板などの種々素子形成可能な基板であるが、各素子１
２は第一基板１０上に直接形成したものであっても良
く、他の基板上で形成されたものを配列したものであっ
ても良い。FIG. 6 is a diagram showing the basic steps of the two-step enlargement transfer method. First, elements 12 such as light emitting elements are densely formed on the first substrate 10 shown in FIG. 6 (a). . By forming the elements densely, the number of elements generated on each substrate can be increased, and the product cost can be reduced. The first substrate 10 is a substrate on which various elements can be formed, such as a semiconductor wafer, a glass substrate, a quartz glass substrate, a sapphire substrate, and a plastic substrate.
2 may be formed directly on the first substrate 10, or may be formed by arranging those formed on another substrate.

【００２９】次に、図６（ｂ）に示すように、第一基板
１０から各素子１２が一時保持用部材１１に転写され、
この一時保持用部材１１の上に各素子１２が保持され
る。このとき、一時保持用部材１１にはＵＶ硬化型及び
熱硬化型の両方の性質を有する接着剤により接着剤層が
形成されており、予め接着剤層にＵＶ光を選択的に照射
することにより粘着性が消失した被接着領域と、ＵＶ光
が照射されることなく粘着性が保持された接着領域とが
パターニングされている。また、転写工程における素子
１２の取り扱いを容易にし、且つ素子１２に電極パッド
を形成し易くするために素子１２の周囲を樹脂で被覆し
たチップとしておくことにより、チップの略平坦な面と
接着領域とを当接させて接着することができる。Next, as shown in FIG. 6B, each element 12 is transferred from the first substrate 10 to the temporary holding member 11,
Each element 12 is held on the temporary holding member 11. At this time, an adhesive layer is formed on the temporary holding member 11 with an adhesive having both UV-curable and thermosetting properties, and the adhesive layer is previously selectively irradiated with UV light. The adhered region where the adhesiveness has disappeared and the adhesive region where the adhesiveness is maintained without being irradiated with UV light are patterned. Further, in order to facilitate the handling of the element 12 in the transfer step and to facilitate the formation of the electrode pad on the element 12, the periphery of the element 12 is made into a resin-coated chip, so that the substantially flat surface of the chip and the bonding area And can be brought into contact and bonded.

【００３０】なお、隣接する素子１２は例えば複数の一
時保持用部材間での接着領域と非接着領域とがパターン
グされた接着剤層を介して選択分離を行うことにより、
最終的には一時保持用部材上で離間され、図示のように
マトリクス状に配される。すなわち素子１２はｘ方向に
もそれぞれ素子の間を広げるように転写されるが、ｘ方
向に垂直なｙ方向にもそれぞれ素子の間を広げるように
転写される。このとき離間される距離は、特に限定され
ず、一例として後続の工程での樹脂部形成や電極パッド
の形成を考慮した距離とすることができる。The adjacent elements 12 are selectively separated by, for example, an adhesive layer having a pattern of adhesive regions and non-adhesive regions between a plurality of temporary holding members.
Finally, they are separated on the temporary holding member and arranged in a matrix as shown in the drawing. That is, the elements 12 are transferred so as to widen the spaces between the elements in the x direction, but are also transferred so as to widen the spaces between the elements also in the y direction perpendicular to the x direction. The distance separated at this time is not particularly limited, and as an example, the distance can be set in consideration of the resin portion formation and the electrode pad formation in the subsequent process.

【００３１】このような第一転写工程の後、図６（ｃ）
に示すように、一時保持用部材１１上に存在する素子１
２は互いに離間されていることから、各素子１２毎に電
極パッドの形成が行われる。電極パッドの形成は、後述
するように、最終的な配線が続く第二転写工程の後に行
われるため、その際に配線不良が生じないように比較的
大き目のサイズに形成されるものである。なお、図６
（ｃ）には電極パッドは図示していない。樹脂１３で固
められた各素子１２に電極パッドを形成することで樹脂
形成チップ１４が形成される。素子１２は平面上、樹脂
形成チップ１４の略中央に位置するが、一方の辺や角側
に偏った位置に存在するものであっても良い。After the first transfer step as described above, FIG.
As shown in FIG. 1, the element 1 existing on the temporary holding member 11
Since 2 are separated from each other, an electrode pad is formed for each element 12. As will be described later, the electrode pad is formed after the second transfer step in which the final wiring is continued, so that the electrode pad is formed in a relatively large size so that wiring failure does not occur at that time. Note that FIG.
The electrode pad is not shown in FIG. A resin-formed chip 14 is formed by forming electrode pads on each element 12 solidified with the resin 13. The element 12 is located substantially in the center of the resin-formed chip 14 on a plane, but may be located at a position deviated to one side or a corner side.

【００３２】次に、図６（ｄ）に示すように、第二転写
工程が行われる。この第二転写工程では一時保持用部材
１１上でマトリクス状に配される素子１２が樹脂形成チ
ップ１４ごと更に離間するように第二基板１５上に転写
される。第二転写工程においても、隣接する素子１２は
樹脂形成チップ１４ごと離間され、図示のようにマトリ
クス状に配される。すなわち素子１２はｘ方向にもそれ
ぞれ素子の間を広げるように転写されるが、ｘ方向に垂
直なｙ方向にもそれぞれ素子の間を広げるように転写さ
れる。第二転写工程によって配置された素子の位置が画
像表示装置などの最終製品の画素に対応する位置である
とすると、当初の素子１２間のピッチの略整数倍が第二
転写工程によって配置された素子１２のピッチとなる。
ここで第一基板１０から一時保持用部材１１での離間し
たピッチの拡大率をｎとし、一時保持用部材１１から第
二基板１５での離間したピッチの拡大率をｍとすると、
略整数倍の値ＥはＥ＝ｎ×ｍで表される。Next, as shown in FIG. 6D, a second transfer step is performed. In the second transfer step, the elements 12 arranged in a matrix on the temporary holding member 11 are transferred onto the second substrate 15 so as to be further separated together with the resin-formed chips 14. Also in the second transfer step, the adjacent elements 12 are separated from each other with the resin-formed chips 14 and arranged in a matrix as shown in the drawing. That is, the elements 12 are transferred so as to widen the spaces between the elements in the x direction, but are also transferred so as to widen the spaces between the elements also in the y direction perpendicular to the x direction. Assuming that the positions of the elements arranged by the second transfer step correspond to the pixels of the final product such as an image display device, approximately an integer multiple of the pitch between the initial elements 12 is arranged by the second transfer step. It is the pitch of the elements 12.
Here, when the enlargement ratio of the pitch separated from the first substrate 10 to the temporary holding member 11 is n and the expansion ratio of the pitch separated from the temporary holding member 11 to the second substrate 15 is m,
The value E, which is an integer multiple, is represented by E = n × m.

【００３３】第二基板１５上に樹脂形成チップ１４ごと
離間された各素子１２には、配線が施される。この時、
先に形成した電極パッド等を利用して接続不良を極力抑
えながらの配線がなされる。この配線は例えば素子１２
が発光ダイオードなどの発光素子の場合には、ｐ電極、
ｎ電極への配線を含み、液晶制御素子の場合は、選択信
号線、電圧線や、配向電極膜などの配線等を含む。Wiring is provided to each of the elements 12, which are separated from each other by the resin-formed chip 14 on the second substrate 15. At this time,
Wiring is performed by using the electrode pad or the like previously formed while suppressing connection failure as much as possible. This wiring is, for example, the element 12
Is a light emitting element such as a light emitting diode, a p electrode,
Including a wiring to the n-electrode, in the case of a liquid crystal control element, a selection signal line, a voltage line, a wiring such as an alignment electrode film, and the like are included.

【００３４】図６に示した二段階拡大転写法において
は、第一転写後の離間したスペースを利用して電極パッ
ドの形成などを行うことができ、そして第二転写後に配
線が施されるが、先に形成した電極パッド等を利用して
接続不良を極力抑えながらの配線がなされる。従って、
画像表示装置の歩留まりを向上させることができる。ま
た、本例の二段階拡大転写法においては、素子間の距離
を離間する工程が２工程であり、このような素子間の距
離を離間する複数工程の拡大転写を行うことで、実際は
転写回数が減ることになる。すなわち、例えば、ここで
第一基板１０から一時保持用部材１１での離間したピッ
チの拡大率を２（ｎ＝２）とし、一時保持用部材１１か
ら第二基板１５での離間したピッチの拡大率を２（ｍ＝
２）とすると、仮に一度の転写で拡大した範囲に転写し
ようとしたときでは、最終拡大率が２×２の４倍で、そ
の二乗の１６回の転写すなわち第一基板のアライメント
を１６回行う必要が生ずるが、本例の二段階拡大転写法
では、アライメントの回数は第一転写工程での拡大率２
の二乗の４回と第二転写工程での拡大率２の二乗の４回
を単純に加えただけの計８回で済むことになる。即ち、
同じ転写倍率を意図する場合においては、（ｎ＋ｍ）２
＝ｎ２＋２ｎｍ＋ｍ２であることから、必ず２ｎｍ回だ
け転写回数を減らすことができることになる。従って、
製造工程も回数分だけ時間や経費の節約となり、特に拡
大率の大きい場合に有益となる。In the two-step enlargement transfer method shown in FIG. 6, the electrode pads can be formed using the separated space after the first transfer, and the wiring is provided after the second transfer. By using the electrode pads or the like previously formed, wiring is performed while suppressing connection failure as much as possible. Therefore,
The yield of the image display device can be improved. In addition, in the two-step magnifying transfer method of this example, the step of separating the distance between the elements is two steps. Will be reduced. That is, for example, here, the enlargement ratio of the pitch separated from the first substrate 10 by the temporary holding member 11 is set to 2 (n = 2), and the expansion of the pitch separated from the temporary holding member 11 by the second substrate 15 is performed. The rate is 2 (m =
If 2), if it is attempted to transfer to an expanded area by one transfer, the final expansion ratio is 4 times 2 × 2, and the squared transfer is performed 16 times, that is, alignment of the first substrate is performed 16 times. Although necessary, in the two-step enlargement transfer method of this example, the number of times of alignment is the enlargement ratio 2 in the first transfer step.
4 times the square of 2 and 4 times the square of the enlargement ratio 2 in the second transfer process are simply added, and a total of 8 times are required. That is,
If the same transfer magnification is intended, (n + m) 2
Since = n 2 +2 nm + m 2 , the number of times of transfer can be reduced by 2 nm. Therefore,
The manufacturing process also saves time and cost by the number of times, which is useful especially when the expansion rate is large.

【００３５】なお、図６に示した二段階拡大転写法にお
いては、素子１２を例えば発光素子としているが、これ
に限定されず、他の素子例えば液晶制御素子、光電変換
素子、圧電素子、薄膜トランジスタ素子、薄膜ダイオー
ド素子、抵抗素子、スイッチング素子、微小磁気素子、
微小光学素子から選ばれた素子若しくはその部分、これ
らの組み合わせなどであっても良い。また、素子１２の
形状は接着剤層に接する面が略平坦な面とされる立体形
状が望ましいが、凹凸を有する面が接着剤層に接する形
状であっても良い。In the two-step enlargement transfer method shown in FIG. 6, the element 12 is, for example, a light emitting element, but is not limited to this, and other elements such as a liquid crystal control element, a photoelectric conversion element, a piezoelectric element, and a thin film transistor. Element, thin film diode element, resistance element, switching element, micro magnetic element,
It may be an element selected from minute optical elements or a portion thereof, or a combination thereof. Further, the shape of the element 12 is preferably a three-dimensional shape in which the surface in contact with the adhesive layer is a substantially flat surface, but the surface having irregularities may be in contact with the adhesive layer.

【００３６】上記第二転写工程においては、発光素子は
樹脂形成チップとして取り扱われ、一時保持用部材上か
ら第二基板にそれぞれ転写されるが、この樹脂形成チッ
プについて図７及び図８を参照して説明する。樹脂形成
チップ１４は、離間して配置されている素子１２の周り
を樹脂１３で固めたものであり、このような樹脂形成チ
ップ１４は、一時保持用部材から第二基板に素子１２を
転写する場合に使用できるものである。樹脂形成チップ
１４は略平板上でその主たる面が略正方形状とされる。
この樹脂形成チップ１４の形状は樹脂１３を固めて形成
された形状であり、具体的には未硬化の樹脂を各素子１
２を含むように全面に塗布し、これを硬化した後で縁の
部分をダイシング等で切断することで得られる形状であ
る。In the second transfer step, the light emitting element is treated as a resin-formed chip and transferred onto the second substrate from the temporary holding member. Refer to FIGS. 7 and 8 for this resin-formed chip. Explain. The resin-formed chip 14 is a resin 12 around the elements 12 arranged apart from each other. The resin-formed chip 14 transfers the element 12 from the temporary holding member to the second substrate. It can be used in any case. The resin-formed chip 14 has a substantially flat plate shape and its main surface has a substantially square shape.
The shape of the resin-formed chip 14 is a shape formed by hardening the resin 13. Specifically, an uncured resin is used for each element 1
It is a shape obtained by coating the entire surface so as to contain 2, curing this, and then cutting the edge portion by dicing or the like.

【００３７】略平板状の樹脂１３の表面側と裏面側とに
はそれぞれ電極パッド１６、１７が形成される。これら
電極パッド１６、１７の形成は全面に電極パッド１６、
１７の材料となる金属層や多結晶シリコン層などの導電
層を形成し、フォトリソグラフィー技術により所要の電
極形状にパターンニングすることで形成される。これら
電極パッド１６、１７は発光素子である素子１２のｐ電
極とｎ電極にそれぞれ接続するように形成されており、
必要な場合には樹脂１３にビアホールなどが形成され
る。Electrode pads 16 and 17 are formed on the front surface side and the back surface side of the substantially plate-shaped resin 13, respectively. The electrode pads 16 and 17 are formed on the entire surface by
It is formed by forming a conductive layer such as a metal layer or a polycrystalline silicon layer which is a material of 17, and patterning it into a desired electrode shape by a photolithography technique. These electrode pads 16 and 17 are formed so as to be respectively connected to the p electrode and the n electrode of the element 12 which is a light emitting element,
A via hole or the like is formed in the resin 13 if necessary.

【００３８】ここで電極パッド１６、１７は樹脂形成チ
ップ１４の表面側と裏面側とにそれぞれ形成されている
が、一方の面に両方の電極パッドを形成することも可能
であり、例えば薄膜トランジスタの場合ではソース、ゲ
ート、ドレインの３つの電極があるため、電極パッドを
３つ或いはそれ以上形成しても良い。電極パッド１６、
１７の位置が平板上ずれているのは、最終的な配線形成
時に上側からコンタクトをとっても重ならないようにす
るためである。電極パッド１６、１７の形状も正方形に
限定されず他の形状としても良い。Here, the electrode pads 16 and 17 are formed on the front surface side and the back surface side of the resin-formed chip 14, respectively, but it is also possible to form both electrode pads on one surface, for example, in a thin film transistor. In some cases, since there are three electrodes of a source, a gate, and a drain, three or more electrode pads may be formed. Electrode pad 16,
The position of 17 is deviated on the flat plate so that the contacts do not overlap even if the contacts are taken from above when the final wiring is formed. The shape of the electrode pads 16 and 17 is not limited to the square shape, and may be another shape.

【００３９】このような樹脂形成チップ１４を構成する
ことで、素子１２の周りが樹脂１３で被覆され平坦化に
よって精度良く電極パッド１６、１７を形成できるとと
もに素子１２に比べて広い領域に電極パッド１６、１７
を延在でき、次の第二転写工程での転写を吸着治具で進
める場合には取り扱いが容易になる。後述するように、
最終的な配線が続く第二転写工程の後に行われるため、
比較的大き目のサイズの電極パッド１６、１７を利用し
た配線を行うことで、配線不良が未然に防止される。By configuring the resin-formed chip 14 as described above, the periphery of the element 12 is covered with the resin 13, and the electrode pads 16 and 17 can be accurately formed by flattening, and the electrode pad is formed in a wider area than the element 12. 16, 17
Can be extended, and handling is facilitated when the transfer in the next second transfer step is advanced by the suction jig. As described below,
Because the final wiring is performed after the second transfer step,
By using the relatively large size electrode pads 16 and 17 for wiring, wiring failure can be prevented.

【００４０】次に、図９に本例の二段階拡大転写法で使
用される素子の一例としての発光素子の構造を示す。図
９（ａ）が素子断面図であり、図９（ｂ）が平面図であ
る。この発光素子はＧａＮ系の発光ダイオードであり、
たとえばサファイア基板上に結晶成長される素子であ
る。このようなＧａＮ系の発光ダイオードでは、基板を
透過するレーザ照射によってレーザアブレーションが生
じ、ＧａＮの窒素が気化する現象にともなってサファイ
ア基板とＧａＮ系の成長層の間の界面で膜剥がれが生
じ、素子分離を容易なものにできる特徴を有している。Next, FIG. 9 shows the structure of a light emitting element as an example of an element used in the two-step expansion transfer method of this example. 9A is a sectional view of the element, and FIG. 9B is a plan view. This light emitting element is a GaN-based light emitting diode,
For example, it is an element that is crystal-grown on a sapphire substrate. In such a GaN-based light emitting diode, laser ablation occurs due to laser irradiation through the substrate, and film peeling occurs at the interface between the sapphire substrate and the GaN-based growth layer due to the phenomenon of nitrogen vaporization of GaN. It has a feature that element isolation can be facilitated.

【００４１】まず、その構造については、ＧａＮ系半導
体層からなる下地成長層２１上に選択成長された六角錐
形状のＧａＮ層２２が形成されている。なお、下地成長
層２１上には図示しない絶縁膜が存在し、六角錐形状の
ＧａＮ層２２はその絶縁膜を開口した部分にＭＯＣＶＤ
法などによって形成される。このＧａＮ層２２は、成長
時に使用されるサファイア基板の主面をＣ面とした場合
にＳ面（（１−１０１）面）で覆われたピラミッド型の
成長層であり、シリコンをドープさせた領域である。こ
のＧａＮ層２２の傾斜したＳ面の部分はダブルへテロ構
造のクラッドとして機能する。ＧａＮ層２２の傾斜した
Ｓ面を覆うように活性層であるＩｎＧａＮ層２３が形成
されており、その外側にマグネシウムドープのＧａＮ層
２４が形成される。このマグネシウムドープのＧａＮ層
２４もクラッドとして機能する。First, regarding the structure, a hexagonal pyramidal GaN layer 22 selectively grown on an underlying growth layer 21 made of a GaN-based semiconductor layer is formed. An insulating film (not shown) is present on the underlying growth layer 21, and the hexagonal pyramidal GaN layer 22 is MOCVD-formed in the opening of the insulating film.
It is formed by the method. The GaN layer 22 is a pyramid-shaped growth layer covered with the S plane ((1-101) plane) when the main surface of the sapphire substrate used during growth is the C plane, and is doped with silicon. Area. The inclined S-plane portion of the GaN layer 22 functions as a clad having a double hetero structure. An InGaN layer 23, which is an active layer, is formed so as to cover the inclined S surface of the GaN layer 22, and a magnesium-doped GaN layer 24 is formed on the outside thereof. The magnesium-doped GaN layer 24 also functions as a clad.

【００４２】このような発光ダイオードには、ｐ電極２
５とｎ電極２６とが形成されている。ｐ電極２５はマグ
ネシウムドープのＧａＮ層２４上に形成されるＮｉ／Ｐ
ｔ／ＡｕまたはＮｉ（Ｐｄ）／Ｐｔ／Ａｕなどの金属材
料を蒸着して形成される。ｎ電極２６は前述の図示しな
い絶縁膜を開口した部分でＴｉ／Ａｌ／Ｐｔ／Ａｕなど
の金属材料を蒸着して形成される。なお、下地成長層２
１の裏面側からｎ電極の取り出しを行う場合は、ｎ電極
２６の形成は下地成長層２１の表面側には不要となる。In such a light emitting diode, the p electrode 2
5 and the n-electrode 26 are formed. The p electrode 25 is Ni / P formed on the magnesium-doped GaN layer 24.
It is formed by depositing a metal material such as t / Au or Ni (Pd) / Pt / Au. The n-electrode 26 is formed by vapor-depositing a metal material such as Ti / Al / Pt / Au at the opening of the insulating film (not shown). The underlying growth layer 2
When the n-electrode is taken out from the back surface side of No. 1, the formation of the n-electrode 26 becomes unnecessary on the front surface side of the underlying growth layer 21.

【００４３】このような構造のＧａＮ系の発光ダイオー
ドは、青色発光も可能な素子であって、特にレーザアブ
レーションよって比較的簡単にサファイア基板から剥離
することができ、レーザビームを選択的に照射すること
で選択的な剥離が実現される。なお、ＧａＮ系の発光ダ
イオードとしては、平板上や帯状に活性層が形成される
構造であっても良く、上端部にＣ面が形成された角錐構
造のものであっても良い。また、他の窒化物系発光素子
や化合物半導体素子などであっても良い。The GaN-based light emitting diode having such a structure is an element capable of emitting blue light, and can be peeled off from the sapphire substrate relatively easily by laser ablation, and a laser beam is selectively irradiated. As a result, selective peeling is realized. The GaN-based light emitting diode may have a structure in which an active layer is formed on a flat plate or in a strip shape, or may have a pyramidal structure in which a C plane is formed at an upper end portion. Further, it may be another nitride-based light emitting device, a compound semiconductor device, or the like.

【００４４】次に、図６に示す素子の配列方法を応用し
た画像表示装置の製造方法の具体的手法について説明す
る。発光素子は図９に示したＧａＮ系の発光ダイオード
を用いている。先ず、図１０に示すように、第一基板４
１の主面上には複数の発光ダイオード４２が密な状態で
形成されている。発光ダイオード４２の大きさは微小な
ものとすることができ、例えば一辺約２０μｍ程度とす
ることができる。第一基板４１の構成材料としてはサフ
ァイア基板などのように発光ダイオード４２に照射する
レーザの波長に対して透過率の高い材料が用いられる。
発光ダイオード４２にはｐ電極などまでは形成されてい
るが最終的な配線は未だなされておらず、素子間分離の
溝４２ｇが形成されていて、個々の発光ダイオード４２
は分離できる状態にある。この溝４２ｇの形成は例えば
反応性イオンエッチングで行う。Next, a specific method of manufacturing an image display device to which the element arranging method shown in FIG. 6 is applied will be described. As the light emitting element, the GaN-based light emitting diode shown in FIG. 9 is used. First, as shown in FIG.
A plurality of light emitting diodes 42 are densely formed on one main surface. The size of the light emitting diode 42 may be minute, and may be, for example, about 20 μm on each side. As a constituent material of the first substrate 41, a material such as a sapphire substrate having a high transmittance with respect to the wavelength of the laser with which the light emitting diode 42 is irradiated is used.
Although the p-electrode and the like are formed in the light-emitting diode 42, the final wiring is not yet formed, and the groove 42g for separating the elements is formed, so that each light-emitting diode 42 is formed.
Can be separated. The groove 42g is formed by, for example, reactive ion etching.

【００４５】次いで、第一基板４１上の発光ダイオード
４２を第１の一時保持用部材４３上に転写する。ここで
第１の一時保持用部材４３の例としては、ガラス基板、
石英ガラス基板、プラスチック基板などを用いることが
でき、本例では石英ガラス基板を用いた。また、第１の
一時保持用部材４３の表面には、離型層として機能する
剥離層４４が形成されている。剥離層４４には、フッ素
コート、シリコーン樹脂、水溶性接着剤（例えばポリビ
ニルアルコール：ＰＶＡ）、ポリイミドなどを用いるこ
とができるが、ここではポリイミドを用いた。Next, the light emitting diode 42 on the first substrate 41 is transferred onto the first temporary holding member 43. Here, as an example of the first temporary holding member 43, a glass substrate,
A quartz glass substrate, a plastic substrate, or the like can be used. In this example, the quartz glass substrate was used. Further, a release layer 44 that functions as a release layer is formed on the surface of the first temporary holding member 43. A fluorine coat, a silicone resin, a water-soluble adhesive (for example, polyvinyl alcohol: PVA), polyimide, or the like can be used for the release layer 44, but here, polyimide is used.

【００４６】転写に際しては、図１０に示すように、第
一基板４１上に発光ダイオード４２を覆うに足る接着剤
（例えば紫外線硬化型の接着剤）４５を塗布し、発光ダ
イオード４２で支持されるように第１の一時保持用部材
４３を重ね合わせる。この状態で、図１１に示すように
第１の一時保持用部材４３の裏面側から接着剤４５に紫
外線（ＵＶ）を照射し、これを硬化する。第１の一時保
持用部材４３は石英ガラス基板であり、上記紫外線はこ
れを透過して接着剤４５を速やかに硬化する。At the time of transfer, as shown in FIG. 10, an adhesive (for example, an ultraviolet curable adhesive) 45 sufficient to cover the light emitting diode 42 is applied on the first substrate 41, and is supported by the light emitting diode 42. Thus, the first temporary holding member 43 is superposed. In this state, as shown in FIG. 11, the adhesive 45 is irradiated with ultraviolet rays (UV) from the back surface side of the first temporary holding member 43 to cure it. The first temporary holding member 43 is a quartz glass substrate, and the ultraviolet rays pass through this to quickly cure the adhesive 45.

【００４７】このとき、第１の一時保持用部材４３は、
発光ダイオード４２によって支持されていることから、
第一基板４１と第１の一時保持用部材４３との間隔は、
発光ダイオード４２の高さによって決まることになる。
図１１に示すように発光ダイオード４２で支持されるよ
うに第１の一時保持用部材４３を重ね合わせた状態で接
着剤４５を硬化すれば、当該接着剤４５の厚さｔは、第
一基板４１と第１の一時保持用部材４３との間隔によっ
て規制されることになり、発光ダイオード４２の高さに
よって規制される。すなわち、第一基板４１上の発光ダ
イオード４２がスペーサとしての役割を果たし、一定の
厚さの接着剤層が第一基板４１と第１の一時保持用部材
４３の間に形成されることになる。このように、上記の
方法では、発光ダイオード４２の高さにより接着剤層の
厚みが決まるため、厳密に圧力を制御しなくとも一定の
厚みの接着剤層を形成することが可能である。At this time, the first temporary holding member 43 is
Since it is supported by the light emitting diode 42,
The distance between the first substrate 41 and the first temporary holding member 43 is
It depends on the height of the light emitting diode 42.
As shown in FIG. 11, if the adhesive 45 is cured while the first temporary holding member 43 is superposed so as to be supported by the light emitting diode 42, the thickness t of the adhesive 45 becomes the first substrate. It is regulated by the distance between 41 and the first temporary holding member 43, and is regulated by the height of the light emitting diode 42. That is, the light emitting diode 42 on the first substrate 41 functions as a spacer, and an adhesive layer having a constant thickness is formed between the first substrate 41 and the first temporary holding member 43. . As described above, in the above method, since the thickness of the adhesive layer is determined by the height of the light emitting diode 42, it is possible to form the adhesive layer having a constant thickness without strictly controlling the pressure.

【００４８】接着剤４５を硬化した後、図１２に示すよ
うに、発光ダイオード４２に対しレーザを第一基板４１
の裏面から照射し、当該発光ダイオード４２を第一基板
４１からレーザアブレーションを利用して剥離する。Ｇ
ａＮ系の発光ダイオード４２はサファイアとの界面で金
属のＧａと窒素に分解することから、比較的簡単に剥離
できる。照射するレーザとしてはエキシマレーザ、高調
波ＹＡＧレーザなどが用いられる。このレーザアブレー
ションを利用した剥離によって、発光ダイオード４２は
第一基板４１の界面で分離し、一時保持用部材４３上に
接着剤４５に埋め込まれた状態で転写される。After the adhesive 45 is cured, a laser is applied to the light emitting diode 42 as shown in FIG.
Then, the light emitting diode 42 is separated from the first substrate 41 by laser ablation. G
Since the aN-based light emitting diode 42 decomposes into metallic Ga and nitrogen at the interface with sapphire, it can be peeled off relatively easily. An excimer laser, a harmonic YAG laser, or the like is used as a laser for irradiation. By the peeling using the laser ablation, the light emitting diode 42 is separated at the interface of the first substrate 41 and is transferred onto the temporary holding member 43 in a state of being embedded in the adhesive 45.

【００４９】図１３は、上記剥離により第一基板４１を
取り除いた状態を示すものである。このとき、レーザに
てＧａＮ系発光ダイオードをサファイア基板からなる第
一基板４１から剥離しており、その剥離面にＧａ４６が
析出しているため、これをエッチングすることが必要で
ある。そこで、ＮａＯＨ水溶液もしくは希硝酸などによ
りウエットエッチングを行い、図１４に示すように、Ｇ
ａ４６を除去する。さらに、図１５に示すように酸素プ
ラズマ（Ｏ２プラズマ）により表面を清浄化し、ダイシ
ングにより接着剤４５をダイシング溝４７によって切断
し、発光ダイオード４２毎にダイシングした後、発光ダ
イオード４２の選択分離を行なう。ダイシングプロセス
は通常のブレードを用いたダイシング、２０μｍ以下の
幅の狭い切り込みが必要なときには上記レーザを用いた
レーザによる加工を行う。その切り込み幅は画像表示装
置の画素内の接着剤４５で覆われた発光ダイオード４２
の大きさに依存するが、一例として、エキシマレーザに
て溝加工を行い、チップの形状を形成する。FIG. 13 shows a state in which the first substrate 41 has been removed by the above peeling. At this time, the GaN-based light emitting diode is peeled off from the first substrate 41 made of a sapphire substrate with a laser, and Ga 46 is deposited on the peeled surface, so it is necessary to etch this. Therefore, wet etching is performed with an aqueous solution of NaOH or dilute nitric acid, and as shown in FIG.
Remove a46. Further, as shown in FIG. 15, the surface is cleaned by oxygen plasma (O 2 plasma), the adhesive 45 is cut by the dicing groove 47 by dicing, and each light emitting diode 42 is diced, and then the light emitting diodes 42 are selectively separated. To do. As the dicing process, dicing using a normal blade and laser processing using the above laser are performed when a narrow cut of 20 μm or less is required. The cut width is the light emitting diode 42 covered with the adhesive 45 in the pixel of the image display device.
Although it depends on the size of, the groove shape is processed by an excimer laser to form the shape of the chip.

【００５０】発光ダイオード４２を選択分離するには、
先ず、図１６に示すように、第２の一時保持用部材４９
にＵＶ硬化型及び熱硬化型の両方の性質を有する接着剤
を塗布して形成した接着剤層４８に発光ダイオード４２
を重ねる。ここで、図１６乃至図１８に示す工程が、図
６（ｂ）に示した選択転写の工程に対応することにな
る。接着剤層４８には所定のパターンが形成されたパタ
ーンマスクを介して予めＵＶ光を照射し、ＵＶ光を照射
することにより粘着性が消失した非接着領域４８ａと、
ＵＶ光が照射されないことにより粘着性が維持された接
着領域４８ｂとをパターニングしておく。また、第２の
一時保持用部材４９は、先の第１の一時保持用部材４３
と同様、ガラス基板、石英ガラス基板、プラスチック基
板などを用いることができ、本例では石英ガラス基板を
用いた。また、この第２の一時保持用部材４９の表面と
接着剤層４８との間にもポリイミドなどからなる剥離層
５０を形成しておく。To selectively separate the light emitting diodes 42,
First, as shown in FIG. 16, a second temporary holding member 49
The light-emitting diode 42 is formed on the adhesive layer 48 formed by applying an adhesive having both UV-curing type and thermosetting type properties.
Pile up. Here, the steps shown in FIGS. 16 to 18 correspond to the selective transfer step shown in FIG. 6B. The adhesive layer 48 is previously irradiated with UV light through a pattern mask in which a predetermined pattern is formed, and a non-adhesive region 48a in which the adhesiveness is lost by the irradiation of UV light,
The adhesive region 48b, which has been kept adhesive by not being irradiated with UV light, is patterned. The second temporary holding member 49 is the same as the first temporary holding member 43.
Similarly to the above, a glass substrate, a quartz glass substrate, a plastic substrate, or the like can be used. In this example, the quartz glass substrate was used. A peeling layer 50 made of polyimide or the like is also formed between the surface of the second temporary holding member 49 and the adhesive layer 48.

【００５１】次いで、図１７に示すように、転写対象と
なる発光ダイオード４２ａに対応した位置に形成された
接着領域４８ｂに発光ダイオード４２ａを当接しさせて
接着する。ここで、接着剤層４８の表面全体に発光ダイ
オード４２に当接させた場合、非接着領域４８ａは粘着
性が消失していることにより接着領域４８ｂに当接させ
た発光ダイオード４２ａのみを選択的に接着領域４８ｂ
に転写することができる。また、このとき第１の一時保
持用部材４３の裏面側からレーザを照射し、レーザアブ
レーショによりこの発光ダイオード４２ａを第１の一時
保持用部材４３から剥離する。その後、第２の一時保持
用部材４９を第１の一時保持用部材４３から引き剥がす
と、図１８に示すように、上記転写対象となる発光ダイ
オード４２ａのみが選択的に分離され、接着領域４８ｂ
に転写される。また、接着領域４８ｂに発光ダイオード
４２ａを接着させた後に接着剤層４８を加熱することに
より、接着剤層４８の表層だけでなく内部まで硬化させ
ることができる。よって、接着剤層４８の内部まで硬化
されていないことに起因する転写後の発光ダイオード４
２ａの位置ずれを低減することが可能となる。Then, as shown in FIG. 17, the light emitting diode 42a is brought into contact with and adhered to the adhesion region 48b formed at a position corresponding to the light emitting diode 42a to be transferred. Here, when the entire surface of the adhesive layer 48 is brought into contact with the light emitting diode 42, only the light emitting diode 42a brought into contact with the adhesive region 48b is selectively selected because the non-adhesive region 48a loses its adhesiveness. To the adhesive area 48b
Can be transferred to. At this time, laser is irradiated from the back surface side of the first temporary holding member 43, and the light emitting diode 42a is separated from the first temporary holding member 43 by laser ablation. Then, when the second temporary holding member 49 is peeled off from the first temporary holding member 43, as shown in FIG. 18, only the light emitting diode 42a to be transferred is selectively separated, and the bonding area 48b is formed.
Is transcribed to. Further, by heating the adhesive layer 48 after bonding the light emitting diode 42a to the bonding region 48b, not only the surface layer of the adhesive layer 48 but also the inside thereof can be cured. Therefore, the light emitting diode 4 after transfer due to the fact that the inside of the adhesive layer 48 is not cured
It is possible to reduce the positional deviation of 2a.

【００５２】上記選択分離後、図１９に示すように、転
写された発光ダイオード４２ａを覆うように樹脂を塗布
し、樹脂層５１を形成する。さらに、図２０に示すよう
に、酸素プラズマなどにより樹脂層５１の厚さを削減
し、図２１に示すように、発光ダイオード４２ａに対応
した位置にレーザの照射によりビアホール５２を形成す
る。ビアホール５２の形成には、エキシマレーザ、高調
波ＹＡＧレーザ、炭酸ガスレーザなどを用いることがで
きる。このとき、ビアホール５２は例えば約３〜７μｍ
の径を開けることになる。After the selective separation, as shown in FIG. 19, a resin is applied to cover the transferred light emitting diode 42a to form a resin layer 51. Further, as shown in FIG. 20, the thickness of the resin layer 51 is reduced by oxygen plasma or the like, and as shown in FIG. 21, a via hole 52 is formed at a position corresponding to the light emitting diode 42a by laser irradiation. For forming the via hole 52, an excimer laser, a harmonic YAG laser, a carbon dioxide gas laser, or the like can be used. At this time, the via hole 52 is, for example, about 3 to 7 μm.
Will open the diameter of.

【００５３】次に、上記ビアホール５２を介して発光ダ
イオード４２ａのｐ電極と接続されるアノード側電極パ
ッド５３を形成する。このアノード側電極パッド５３
は、例えばＮｉ／Ｐｔ／Ａｕなどで形成する。図２２
は、発光ダイオード４２ａを第２の一時保持用部材４９
に転写して、アノード電極（ｐ電極）側のビアホール５
２を形成した後、アノード側電極パッド５３を形成した
状態を示している。Next, the anode side electrode pad 53 connected to the p electrode of the light emitting diode 42a through the via hole 52 is formed. This anode side electrode pad 53
Is formed of, for example, Ni / Pt / Au. FIG. 22
Is the second temporary holding member 49 for holding the light emitting diode 42a.
Transferred to the via hole 5 on the anode electrode (p electrode) side.
2 shows a state in which the anode side electrode pad 53 has been formed after forming 2.

【００５４】上記アノード側電極パッド５３を形成した
後、反対側の面にカソード側電極を形成するため、第３
の一時保持用部材５４への転写を行う。第３の一時保持
用部材５４も、例えば石英ガラスなどからなる。転写に
際しては、図２３に示すように、アノード側電極パッド
５３を形成した発光ダイオード４２、さらには樹脂層５
１上に接着剤５５を塗布し、この上に第３の一時保持用
部材５４を貼り合せる。この状態で第２の一時保持用部
材４９の裏面側からレーザを照射すると、石英ガラスか
らなる第２の一時保持用部材４９と、当該第２の一時保
持用部材４９上に形成されたポリイミドからなる剥離層
５０の界面でレーザアブレーションによる剥離が起き、
剥離層５０上に形成されている発光ダイオード４２ａや
樹脂層５１は、第３の一時保持用部材５４上に転写され
る。図２４は、第２の一時保持用部材４９を分離した状
態を示すものである。After forming the anode side electrode pad 53, the third side is formed to form the cathode side electrode on the opposite surface.
Is transferred to the temporary holding member 54. The third temporary holding member 54 is also made of, for example, quartz glass. At the time of transfer, as shown in FIG. 23, the light emitting diode 42 having the anode side electrode pad 53 formed thereon, and further the resin layer 5
The adhesive 55 is applied onto the surface 1 and the third temporary holding member 54 is attached thereon. In this state, when laser light is radiated from the back surface side of the second temporary holding member 49, the second temporary holding member 49 made of quartz glass and the polyimide formed on the second temporary holding member 49 are used. Peeling by laser ablation occurs at the interface of the peeling layer 50
The light emitting diode 42a and the resin layer 51 formed on the peeling layer 50 are transferred onto the third temporary holding member 54. FIG. 24 shows a state in which the second temporary holding member 49 is separated.

【００５５】カソード側電極の形成に際しては、上記の
転写工程を経た後、図２５に示すＯ ２プラズマ処理によ
り剥離層５０や余分な樹脂層５１を除去し、発光ダイオ
ード４２ａのコンタクト半導体層（ｎ電極）を露出させ
る。発光ダイオード４２ａは一時保持用部材５４の接着
剤５５によって保持された状態で、発光ダイオード４２
ａの裏面がｎ電極側（カソード電極側）になっており、
図２６に示すように電極パッド５６を形成すれば、電極
パッド５６は発光ダイオード４２ａの裏面と電気的に接
続される。その後、電極パッド５６をパターニングす
る。このときのカソード側の電極パッドは、例えば約６
０μｍ角とすることができる。電極パッド５６としては
透明電極（ＩＴＯ、ＺｎＯ系など）もしくはＴｉ／Ａｌ
／Ｐｔ／Ａｕなどの材料を用いる。透明電極の場合は発
光ダイオード４２ａの裏面を大きく覆っても発光をさえ
ぎることがないので、パターニング精度が粗く、大きな
電極形成ができ、パターニングプロセスが容易になる。When forming the cathode side electrode,
After the transfer process, the O shown in FIG. TwoBy plasma treatment
The peeling layer 50 and the extra resin layer 51 are removed, and the light emitting diode is removed.
Exposing the contact semiconductor layer (n electrode) of the electrode 42a.
It The light emitting diode 42a is bonded to the temporary holding member 54.
Held by the agent 55, the light emitting diode 42
The back surface of a is the n-electrode side (cathode electrode side),
If the electrode pad 56 is formed as shown in FIG.
The pad 56 electrically contacts the back surface of the light emitting diode 42a.
Will be continued. Then, the electrode pad 56 is patterned.
It The electrode pad on the cathode side at this time is, for example, about 6
It can be 0 μm square. As the electrode pad 56
Transparent electrode (ITO, ZnO, etc.) or Ti / Al
A material such as / Pt / Au is used. In case of transparent electrode
Even if the back surface of the photodiode 42a is covered,
Since there is no breakage, the patterning accuracy is rough and large.
The electrodes can be formed and the patterning process is facilitated.

【００５６】次に、樹脂層５１や接着剤５５によって固
められた発光ダイオード４２ａを個別に切り出し、上記
樹脂形成チップの状態にする。切り出しは、例えばレー
ザダイシングにより行えばよい。図２７は、レーザダイ
シングによる切り出し工程を示すものである。レーザダ
イシングは、レーザのラインビームを照射することによ
り行われ、樹脂層５１及び接着剤５５を第３の一時保持
用部材５４が露出するまで切断する。このレーザダイシ
ングにより発光ダイオード４２ａは所定の大きさの樹脂
形成チップとして切り出され、後述の実装工程へと移行
される。Next, the light emitting diodes 42a solidified by the resin layer 51 and the adhesive 55 are individually cut out to be in the state of the resin forming chip. The cutting may be performed by laser dicing, for example. FIG. 27 shows a cutting process by laser dicing. The laser dicing is performed by irradiating a line beam of a laser, and the resin layer 51 and the adhesive 55 are cut until the third temporary holding member 54 is exposed. By this laser dicing, the light emitting diode 42a is cut out as a resin-formed chip having a predetermined size, and the process proceeds to a mounting process described later.

【００５７】実装工程では、機械的手段（真空吸引によ
る素子吸着）とレーザアブレーションの組み合わせによ
り発光ダイオード４２ａ（樹脂形成チップ）が第３の一
時保持用部材５４から剥離される。図２８は、第３の一
時保持用部材５４上に配列している発光ダイオード４２
を吸着装置５７でピックアップするところを示した図で
ある。このときの吸着孔５８は画像表示装置の画素ピッ
チにマトリクス状に開口していて、発光ダイオード４２
を多数個、一括で吸着できるようになっている。このと
きの開口径は、例えば直径約１００μｍで６００μｍピ
ッチのマトリクス状に開口されて、一括で約３００個を
吸着できる。このときの吸着孔５８の部材は例えば、Ｎ
ｉ電鋳により作製したもの、もしくはＳＵＳなどの金属
板をエッチングで穴加工したものが使用され、吸着孔５
８の奥には吸着チャンバ５９が形成されており、この吸
着チャンバ５９を負圧に制御することで発光ダイオード
４２の吸着が可能になる。発光ダイオード４２はこの段
階で樹脂層５１で覆われており、その上面は略平坦化さ
れている。このために吸着装置５７による選択的な吸着
を容易に進めることができる。In the mounting step, the light emitting diode 42a (resin-formed chip) is separated from the third temporary holding member 54 by a combination of mechanical means (element suction by vacuum suction) and laser ablation. FIG. 28 shows the light emitting diodes 42 arranged on the third temporary holding member 54.
It is a figure showing a place where it picks up with adsorption device 57. At this time, the suction holes 58 are opened in a matrix at the pixel pitch of the image display device, and the light emitting diodes 42 are
It is possible to adsorb a large number of pieces at once. The opening diameter at this time is, for example, about 100 μm in diameter, and the openings are formed in a matrix shape with a pitch of 600 μm, and about 300 pieces can be adsorbed at once. The member of the suction hole 58 at this time is, for example, N
The one made by i electroforming or the one made by making a hole by etching a metal plate such as SUS is used.
An adsorption chamber 59 is formed in the inner part of 8, and the light emitting diode 42 can be adsorbed by controlling the adsorption chamber 59 to a negative pressure. The light emitting diode 42 is covered with the resin layer 51 at this stage, and the upper surface thereof is substantially flattened. Therefore, selective adsorption by the adsorption device 57 can be easily promoted.

【００５８】なお、吸着装置５７には、真空吸引による
素子吸着の際に、発光ダイオード４２（樹脂形成チッ
プ）を一定の位置に安定して保持できるように、素子位
置ずれ防止手段を形成しておくことが好ましい。図２９
は、素子位置ずれ防止手段６０を設けた吸着装置５７の
一例を示すものである。本例では、素子位置ずれ防止手
段６０は、樹脂形成チップの周面に当接する位置決めピ
ンとして形成されており、これが樹脂形成チップの周面
（具体的にはレーザダイシングにより切断された樹脂層
５１の切断面）に当接することにより、吸着装置５７と
樹脂形成チップ（すなわち発光ダイオード４２）とが互
いに正確に位置合わせされる。レーザダイシングにより
切断された樹脂層５１の切断面は、完全な垂直面ではな
く、５°〜１０°程度のテーパ−を有する。したがっ
て、上記位置決めピン（素子位置ずれ防止手段６０）に
も同様のテーパ−を持たせておけば、吸着装置５７と発
光ダイオード４２間に若干の位置ずれがあったとして
も、速やかに矯正される。Incidentally, the suction device 57 is provided with element displacement preventing means so that the light emitting diode 42 (resin-formed chip) can be stably held at a fixed position when the element is sucked by vacuum suction. It is preferable to set. FIG. 29
Shows an example of the suction device 57 provided with the element position shift prevention means 60. In this example, the element position deviation prevention means 60 is formed as a positioning pin that comes into contact with the peripheral surface of the resin-formed chip, which is the peripheral surface of the resin-formed chip (specifically, the resin layer 51 cut by laser dicing). By abutting against the cut surface of (1), the suction device 57 and the resin-formed chip (that is, the light emitting diode 42) are accurately aligned with each other. The cut surface of the resin layer 51 cut by laser dicing is not a completely vertical surface but has a taper of about 5 ° to 10 °. Therefore, if the positioning pin (element position shift prevention means 60) is also provided with the same taper, even if there is a slight position shift between the suction device 57 and the light emitting diode 42, it can be quickly corrected. .

【００５９】発光ダイオード４２の剥離に際しては、上
記吸着装置５７による素子吸着と、レーザアブレーショ
ンによる樹脂形成チップの剥離を組み合わせ、剥離が円
滑に進むようにしている。レーザアブレーションは、第
３の一時保持用部材５４の裏面側からレーザを照射する
ことにより行う。このレーザアブレーションによって、
第３の一時保持用部材５４と接着剤５５の界面で剥離が
生ずる。At the time of peeling the light emitting diode 42, the element suction by the suction device 57 and the peeling of the resin-formed chip by laser ablation are combined so that the peeling proceeds smoothly. Laser ablation is performed by irradiating a laser from the back surface side of the third temporary holding member 54. By this laser ablation,
Peeling occurs at the interface between the third temporary holding member 54 and the adhesive 55.

【００６０】図３０は発光ダイオード４２ａを第二基板
６１に転写するところを示した図である。第二基板６１
は、配線層６２を有する配線基板であり、発光ダイオー
ド４２ａを装着する際に第二基板６１にあらかじめ接着
剤層６３が塗布されており、その発光ダイオード４２ａ
下面の接着剤層６３を硬化させ、発光ダイオード４２ａ
を第二基板６１に固着して配列させることができる。こ
の装着時には、吸着装置５７の吸着チャンバ５９が圧力
の高い状態となり、吸着装置５７と発光ダイオード４２
ａとの吸着による結合状態は解放される。接着剤層６３
はＵＶ硬化型接着剤、熱硬化性接着剤、熱可塑性接着剤
などによって構成することができる。第二基板６１上で
発光ダイオード４２ａが配置される位置は、一時保持用
部材５４上での配列よりも離間したものとなる。接着剤
層６３の樹脂を硬化させるエネルギーは第二基板６１の
裏面から供給される。ＵＶ硬化型接着剤の場合はＵＶ照
射装置にて、熱硬化性接着剤の場合は赤外線加熱などに
よって発光ダイオード４２ａの下面のみ硬化させ、熱可
塑性接着剤場合は、赤外線やレーザの照射によって接着
剤を溶融させ接着を行う。FIG. 30 shows the transfer of the light emitting diode 42a onto the second substrate 61. Second substrate 61
Is a wiring board having a wiring layer 62, and an adhesive layer 63 is previously applied to the second substrate 61 when the light emitting diode 42a is mounted.
By curing the adhesive layer 63 on the lower surface, the light emitting diode 42a
Can be fixed to the second substrate 61 and arranged. At the time of this mounting, the suction chamber 59 of the suction device 57 is in a high pressure state, and the suction device 57 and the light emitting diode 42
The binding state due to adsorption with a is released. Adhesive layer 63
Can be composed of a UV curable adhesive, a thermosetting adhesive, a thermoplastic adhesive, or the like. The position where the light emitting diode 42a is arranged on the second substrate 61 is farther from the arrangement on the temporary holding member 54. Energy for curing the resin of the adhesive layer 63 is supplied from the back surface of the second substrate 61. In the case of a UV curable adhesive, a UV irradiator is used. In the case of a thermosetting adhesive, only the lower surface of the light emitting diode 42a is cured by infrared heating or the like. In the case of a thermoplastic adhesive, the adhesive is irradiated by infrared rays or laser. Are melted and bonded.

【００６１】図３１は、他の色の発光ダイオード６４を
第二基板６１に配列させるプロセスを示す図である。図
２７あるいは図２８で用いた吸着装置５７をそのまま使
用して、第二基板６１にマウントする位置をその色の位
置にずらすだけでマウントすると、画素としてのピッチ
は一定のまま複数色からなる画素を形成できる。ここ
で、発光ダイオード４２ａと発光ダイオード６４は必ず
しも同じ形状でなくとも良い。図３１では、赤色の発光
ダイオード６４が六角錐のＧａＮ層を有しない構造とさ
れ、他の発光ダイオード４２ａとその形状が異なってい
るが、この段階では各発光ダイオード４２ａ、６４は既
に樹脂形成チップとして樹脂層５１、接着剤５５で覆わ
れており、素子構造の違いにもかかわらず同一の取り扱
いが実現される。また、発光ダイオード６４は平板状の
形状を有していることにより、発光ダイオード６４が形
成された素子形成基板から、ＵＶ光を選択的に照射する
ことにより被接着領域と接着領域とがパターニングされ
た接着剤層に選択的に転写することができる。FIG. 31 is a diagram showing a process of arranging light emitting diodes 64 of another color on the second substrate 61. When the suction device 57 used in FIG. 27 or FIG. 28 is used as it is, and the mounting position on the second substrate 61 is simply shifted to the position of that color, the pixel pitch is fixed and the pixel composed of a plurality of colors is formed. Can be formed. Here, the light emitting diode 42a and the light emitting diode 64 do not necessarily have to have the same shape. In FIG. 31, the red light emitting diode 64 has a structure that does not have a hexagonal pyramidal GaN layer, and its shape is different from that of the other light emitting diodes 42a, but at this stage, each of the light emitting diodes 42a, 64 has already been formed with a resin-formed chip. As a result, the resin layer 51 and the adhesive 55 are covered, and the same handling can be realized despite the difference in the element structure. Further, since the light emitting diode 64 has a flat plate shape, the adhered region and the adhered region are patterned by selectively irradiating UV light from the element forming substrate on which the light emitting diode 64 is formed. Can be selectively transferred to the adhesive layer.

【００６２】次いで、図３２に示すように、これら発光
ダイオード４２ａ、６４を含む樹脂形成チップを覆うよ
うに絶縁層６５を形成する。絶縁層６５としては、透明
エポキシ接着剤、ＵＶ硬化型接着剤、ポリイミドなどを
用いることができる。上記絶縁層６５を形成した後、配
線形成工程を行なう。図３３は配線形成工程を示す図で
ある。絶縁層６５に開口部６６、６７、６８、６９、７
０、７１を形成し、発光ダイオード４２ａ、６４のアノ
ード、カソードの電極パッドと第二基板６１の配線層６
２とを接続する配線７２、７３、７４を形成した図であ
る。このときに形成する開口部すなわちビアホールは発
光ダイオード４２ａ、６４の電極パッドの面積を大きく
しているので大きくすることができ、ビアホールの位置
精度も各発光ダイオードに直接形成するビアホールに比
べて粗い精度で形成できる。例えば、このときのビアホ
ールは、約６０μｍ角の電極パッドに対し、直径約２０
μｍのものを形成できる。また、ビアホールの深さは配
線基板と接続するもの、アノード電極と接続するもの、
カソード電極と接続するものの３種類の深さがあるので
レーザのパルス数で制御し、最適な深さを開口する。Next, as shown in FIG. 32, an insulating layer 65 is formed so as to cover the resin-formed chip including these light emitting diodes 42a and 64. As the insulating layer 65, a transparent epoxy adhesive, a UV curable adhesive, polyimide or the like can be used. After forming the insulating layer 65, a wiring forming step is performed. FIG. 33 is a diagram showing a wiring forming process. Openings 66, 67, 68, 69, 7 in the insulating layer 65
0 and 71 are formed, and the anode and cathode electrode pads of the light emitting diodes 42a and 64 and the wiring layer 6 of the second substrate 61 are formed.
It is the figure which formed the wiring 72, 73, 74 which connects 2 and. The opening formed at this time, that is, the via hole can be increased because the area of the electrode pads of the light emitting diodes 42a and 64 is increased, and the positional accuracy of the via hole is rougher than that of the via hole formed directly in each light emitting diode. Can be formed with. For example, the via hole at this time has a diameter of about 20 μm for an electrode pad of about 60 μm square.
μm can be formed. Also, the depth of the via hole is one that connects to the wiring board, one that connects to the anode electrode,
Although there are three types of depths, which are connected to the cathode electrode, the depth is controlled to the optimum depth by controlling the number of laser pulses.

【００６３】その後、図３４に示すように、保護層７５
を形成し、ブラックマスク７６を形成して画像表示装置
のパネルは完成する。このときの保護層７５は図３１の
絶縁層６５と同様である。透明エポキシ接着剤などの材
料が使用できる。この保護層７５は加熱硬化し配線を完
全に覆う。この後、パネル端部の配線からドライバーＩ
Ｃを接続して駆動パネルを製作することになる。Then, as shown in FIG. 34, a protective layer 75 is formed.
And a black mask 76 is formed to complete the panel of the image display device. The protective layer 75 at this time is the same as the insulating layer 65 of FIG. Materials such as clear epoxy adhesive can be used. The protective layer 75 is heated and hardened to completely cover the wiring. After this, the driver I
A drive panel will be manufactured by connecting C.

【００６４】上述のような素子の配列方法においては、
一時保持用部材４９、５４に発光ダイオード４２を保持
させた時点で既に素子間の距離が大きくされ、その広が
った間隔を利用して比較的サイズの電極パッド５３、５
６などを設けることが可能となる。それら比較的サイズ
の大きな電極パッド５３、５６を利用した配線が行われ
るために、素子サイズに比較して最終的な装置のサイズ
が著しく大きな場合であっても容易に配線を形成でき
る。また、本例の発光素子の配列方法では、発光ダイオ
ード４２ａの周囲が硬化した樹脂層５１で被覆されるこ
とにより平坦な面を有するチップとされ、このチップを
ＵＶ光を選択的に照射することにより形成された接着領
域に選択的に転写することにより精度良く電極パッド５
３、５６を形成できるとともに素子に比べて広い領域に
電極パッド５３、５６を延在でき、次の第二転写工程で
の転写を吸着治具で進める場合には取り扱いが容易にな
る。In the element arraying method as described above,
At the time when the light emitting diode 42 is held by the temporary holding members 49 and 54, the distance between the elements is already increased, and the expanded spacing is used to make the electrode pads 53 and 5 of relatively large size.
6 and the like can be provided. Wiring is performed using the electrode pads 53 and 56 having a relatively large size, so that the wiring can be easily formed even when the size of the final device is significantly larger than the element size. In the method for arranging the light emitting elements of this example, the periphery of the light emitting diode 42a is covered with the cured resin layer 51 to form a chip having a flat surface, and this chip is selectively irradiated with UV light. The electrode pad 5 can be accurately transferred by selectively transferring to the adhesion region formed by
3 and 56 can be formed and the electrode pads 53 and 56 can be extended in a wider area than the device, and handling is facilitated when the transfer in the next second transfer step is advanced by the suction jig.

【００６５】[0065]

【発明の効果】本発明の素子の転写方法によれば、素子
の転写先である接着剤層の表面に、ＵＶ光を選択的に照
射することにより粘着性が消失した非接着領域と、ＵＶ
光が照射されことなく粘着性が維持された接着領域とを
精度良くパターニングすることが可能となる。従って、
素子の転写先である一時保持用部材又は基板の所定の領
域にのみ接着剤層を形成することなく、接着領域の表面
と非接着領域の表面とが面一とされた状態で所定の接着
領域に素子を選択的に転写することができる。よって、
素子を転写するに際して、接着領域の表面と非接着領域
の表面との間の段差による素子の位置ずれを低減するこ
とができる。According to the method of transferring an element of the present invention, the surface of the adhesive layer to which the element is transferred has a non-adhesive region in which the tackiness has been lost by selectively irradiating it with UV light, and a UV.
It is possible to accurately pattern the adhesive area where the adhesiveness is maintained without being irradiated with light. Therefore,
A predetermined bonding area in which the surface of the bonding area and the surface of the non-bonding area are flush with each other without forming an adhesive layer only in a predetermined area of the temporary holding member or the substrate to which the element is transferred. The element can be selectively transferred to the device. Therefore,
When transferring the element, it is possible to reduce the positional deviation of the element due to the step between the surface of the adhesion region and the surface of the non-adhesion region.

【００６６】さらに、転写される複数の素子の配置に合
わせて接着領域を精度良くパターングしておくことによ
り、素子を接着させる領域にのみ接着剤層を形成するに
際して生じる接着領域と、配置された素子の位置との生
じる位置ずれを補正するために素子が配置された基板の
位置を調整することなく一括して所定の接着領域に素子
を転写することが可能となる。Further, by accurately patterning the adhesive area in accordance with the arrangement of a plurality of elements to be transferred, the adhesive area generated when the adhesive layer is formed only in the area where the elements are adhered is arranged. It is possible to collectively transfer the elements to a predetermined adhesion area without adjusting the position of the substrate on which the elements are arranged in order to correct the positional deviation caused by the position of the elements.

【００６７】また、本発明の素子の配列方法によれば、
接着領域に素子を離間させるように選択的に転写するこ
とを容易に行うことができ、多段階の転写工程を含む場
合においても容易に素子を転写することができる。According to the method of arranging elements of the present invention,
It is possible to easily perform selective transfer so that the elements are separated from each other in the adhesion region, and it is possible to easily transfer the elements even when a multi-step transfer process is included.

【００６８】さらに、本発明の画像表示装置の製造方法
によれば、発光素子を離間させるように転写するに際し
て、転写先である接着剤層にパターニングされた接着領
域に素子を選択的に転写することができ、効率良く画像
表示装置を製造することが可能となる。Furthermore, according to the method of manufacturing the image display device of the present invention, when the light emitting elements are transferred so as to be spaced apart from each other, the elements are selectively transferred to the adhesive region patterned in the adhesive layer which is the transfer destination. Therefore, the image display device can be efficiently manufactured.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の素子の転写方法を説明する図であっ
て、接着剤層を形成した状態を示す工程断面図である。FIG. 1 is a diagram illustrating a method of transferring an element of the present invention, which is a process cross-sectional view showing a state in which an adhesive layer is formed.

【図２】同素子の転写方法を説明する図であって、ＵＶ
光を接着剤層に選択的に照射するＵＶ光照射工程を示す
工程断面図である。FIG. 2 is a diagram illustrating a transfer method of the same device, which is UV
It is process sectional drawing which shows the UV light irradiation process which selectively irradiates light to an adhesive bond layer.

【図３】同素子の転写方法を説明する図であって、接着
領域と非接着領域とがパターニングされた状態を示す工
程断面図である。FIG. 3 is a diagram for explaining the transfer method of the same element, which is a process cross-sectional view showing a state in which a bonding region and a non-bonding region are patterned.

【図４】同素子の転写方法を説明する図であって、接着
領域に素子を接着する接着工程を示す工程断面図であ
る。FIG. 4 is a diagram for explaining the transfer method of the element, which is a process cross-sectional view showing an adhering step of adhering the element to the adhering region.

【図５】同素子の転写方法を説明する図であって、接着
剤層を硬化して素子を保持する保持工程を示す工程断面
図である。FIG. 5 is a view for explaining the transfer method of the same element, and is a process cross-sectional view showing a holding step of hardening the adhesive layer to hold the element.

【図６】本発明の素子の配列方法を示す模式図である。FIG. 6 is a schematic view showing a method of arranging elements of the present invention.

【図７】樹脂形成チップの概略斜視図である。FIG. 7 is a schematic perspective view of a resin-formed chip.

【図８】樹脂形成チップの概略平面図である。FIG. 8 is a schematic plan view of a resin-formed chip.

【図９】発光素子の一例を示す図であって、（ａ）は断
面図、（ｂ）は平面図である。9A and 9B are diagrams showing an example of a light emitting element, in which FIG. 9A is a sectional view and FIG. 9B is a plan view.

【図１０】第１の一時保持用部材の接合工程を示す工程
断面図である。FIG. 10 is a process cross-sectional view showing the bonding process of the first temporary holding member.

【図１１】ＵＶ接着剤硬化工程を示す工程断面図であ
る。FIG. 11 is a process sectional view showing a UV adhesive curing process.

【図１２】レーザアブレーション工程を示す工程断面図
である。FIG. 12 is a process sectional view showing a laser ablation process.

【図１３】第一基板の分離工程を示す工程断面図であ
る。FIG. 13 is a process sectional view showing a process of separating the first substrate.

【図１４】Ｇａ除去された状態を示す断面図である。FIG. 14 is a cross-sectional view showing a state in which Ga is removed.

【図１５】発光素子の下側を清浄化する清浄化工程を示
す工程断面図である。FIG. 15 is a process cross-sectional view showing a cleaning process for cleaning the lower side of the light emitting element.

【図１６】素子を接着領域に接着する接着工程を示す工
程断面図である。FIG. 16 is a process cross-sectional view showing a bonding process of bonding an element to a bonding region.

【図１７】第１の一時保持用部材から素子を剥離する剥
離工程を示す工程断面図である。FIG. 17 is a process cross-sectional view showing a peeling process of peeling the element from the first temporary holding member.

【図１８】第２の一時保持用部材に素子を保持する保持
工程を示す工程断面図である。FIG. 18 is a process cross-sectional view showing a holding process of holding an element on a second temporary holding member.

【図１９】樹脂による発光素子の埋め込み工程を示す工
程断面図である。FIG. 19 is a process cross-sectional view showing a step of burying a light emitting element with a resin.

【図２０】樹脂層厚を削減する削減工程を示す工程断面
図である。FIG. 20 is a process sectional view showing a reduction process for reducing the resin layer thickness.

【図２１】ビア形成工程を示す工程断面図である。FIG. 21 is a process sectional view showing a via forming process.

【図２２】アノード側電極パッド形成工程を示す工程断
面図である。FIG. 22 is a process sectional view showing a process of forming an anode-side electrode pad.

【図２３】レーザアブレーション工程を示す工程断面図
である。FIG. 23 is a process sectional view showing a laser ablation process.

【図２４】第２の一時保持用部材を分離する分離工程を
示す工程断面図である。FIG. 24 is a process sectional view showing a separation process of separating the second temporary holding member.

【図２５】発光素子のコンタクト領域を露出させる露出
工程を示す工程断面図である。FIG. 25 is a process cross-sectional view showing an exposure process for exposing the contact region of the light emitting element.

【図２６】カソード側電極パッド形成工程を示す工程断
面図である。FIG. 26 is a process sectional view showing a process of forming a cathode-side electrode pad.

【図２７】レーザダイシング工程を示す工程断面図であ
る。FIG. 27 is a process sectional view showing a laser dicing process.

【図２８】吸着装置による発光素子の選択的ピックアッ
プ工程を示す工程断面図である。FIG. 28 is a process cross-sectional view illustrating a selective light-emitting element pickup process using an adsorption device.

【図２９】素子位置ずれ防止手段を設けた吸着装置の一
例を示す概略断面図である。FIG. 29 is a schematic cross-sectional view showing an example of a suction device provided with element position shift prevention means.

【図３０】樹脂形成チップを第二基板への転写する転写
工程を示す工程断面図である。FIG. 30 is a process sectional view showing a transfer process of transferring the resin-formed chip to the second substrate.

【図３１】他の発光ダイオードを転写する転写工程を示
す工程断面図である。FIG. 31 is a process sectional view showing a transfer process of transferring another light emitting diode.

【図３２】絶縁層形成工程を示す工程断面図である。FIG. 32 is a process sectional view showing an insulating layer forming process.

【図３３】配線形成工程を示す工程断面図である。FIG. 33 is a process sectional view showing a wiring forming process.

【図３４】保護層及びブラックマスク形成工程を示す工
程断面図である。FIG. 34 is a process sectional view showing a process of forming a protective layer and a black mask.

【符号の説明】[Explanation of symbols]

１ 、１ｃ接着剤層 １ａ非接着領域 １ｂ接着領域
２基板 ３パターンマスク ３ａパターン ４基板 ５
素子 １０第一基板 １１一時保持用部材 １２素子 １３樹脂 １４樹脂形成チップ １５第二基
板 １６電極パッド ２１下地成長層 ４１第一基板
４２ｇ溝 ４２、４２ａ発光ダイオード ４３一時保持
用部材 ４４剥離層 ４５接着剤 ４７ダイシング溝
４８接着剤層 ４８ｂ接着領域 ４８ａ非接着領域 ４
９一時保持用部材 ５０剥離層 ５１樹脂層 ５２ビア
ホール ５３アノード側電極パッド ５４一時保持用部
材 ５５接着剤 ５６電極パッド ５７吸着装置 ５８
吸着孔 ５９吸着チャンバ ６０防止手段 ６１第二基
板 ６２配線層 ６３接着剤層 ６４発光ダイオード
６５絶縁層 ６６開口部 ７２配線 ７５保護層 ７６
ブラックマスク1, 1c adhesive layer 1a non-adhesive region 1b adhesive region
2 substrate 3 pattern mask 3a pattern 4 substrate 5
Element 10 First substrate 11 Temporary holding member 12 Element 13 Resin 14 Resin forming chip 15 Second substrate 16 Electrode pad 21 Base growth layer 41 First substrate
42g groove 42, 42a light emitting diode 43 temporary holding member 44 peeling layer 45 adhesive 47 dicing groove
48 adhesive layer 48b adhesive region 48a non-adhesive region 4
9 Temporary Holding Member 50 Release Layer 51 Resin Layer 52 Via Hole 53 Anode Side Electrode Pad 54 Temporary Holding Member 55 Adhesive 56 Electrode Pad 57 Adsorption Device 58
Adsorption hole 59 Adsorption chamber 60 Preventing means 61 Second substrate 62 Wiring layer 63 Adhesive layer 64 Light emitting diode
65 Insulating Layer 66 Opening 72 Wiring 75 Protective Layer 76
Black mask

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 27/12 33/00 Ｆターム(参考） 5C094 AA43 BA12 BA25 CA19 FB06 GB10 HA08 5F041 AA37 AA41 CA40 CA46 CA49 CA57 CA65 CA82 CA92 DA13 DA20 FF06 5G435 AA17 BB04 KK05 LL06 LL08─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI theme code (reference) H01L 27/12 33/00 F term (reference) 5C094 AA43 BA12 BA25 CA19 FB06 GB10 HA08 5F041 AA37 AA41 CA40 CA46 CA49 CA57 CA65 CA82 CA92 DA13 DA20 FF06 5G435 AA17 BB04 KK05 LL06 LL08

Claims (17)

【特許請求の範囲】 [Claims] 【請求項１】 接着剤層に光を選択的に照射して接着領
域と非接着領域とを形成する光照射工程と、 転写対象となる素子を前記接着領域に選択的に転写する
転写工程とを有することを特徴とする素子の転写方法。1. A light irradiation step of selectively irradiating an adhesive layer with light to form an adhesion region and a non-adhesion region, and a transfer step of selectively transferring an element to be transferred to the adhesion region. A method for transferring an element, comprising: 【請求項２】 パターンマスクを介して前記光を選択的
に照射することを特徴とする請求項１記載の素子の転写
方法。2. The method of transferring an element according to claim 1, wherein the light is selectively applied through a pattern mask. 【請求項３】 前記非接着領域は、前記光が照射された
照射領域であることを特徴とする請求項１記載の素子の
転写方法。3. The device transfer method according to claim 1, wherein the non-adhesion region is an irradiation region irradiated with the light. 【請求項４】 前記光は、紫外光であることを特徴とす
る請求項１記載の素子の転写方法。4. The method of transferring an element according to claim 1, wherein the light is ultraviolet light. 【請求項５】 前記接着領域の表面と前記非接着領域の
表面とは面一とされることを特徴とする請求項１記載の
素子の転写方法。5. The method of transferring an element according to claim 1, wherein the surface of the adhesive region and the surface of the non-adhesive region are flush with each other. 【請求項６】 基板に接着剤を塗布することにより前記
接着剤層を形成することを特徴とする請求項１記載の素
子の転写方法。6. The device transfer method according to claim 1, wherein the adhesive layer is formed by applying an adhesive to a substrate. 【請求項７】 スピンコータにより前記接着剤を前記基
板に塗布することを特徴とする請求項６記載の素子の転
写方法。7. The method of transferring an element according to claim 6, wherein the adhesive is applied to the substrate by a spin coater. 【請求項８】 前記接着剤は、紫外光硬化型樹脂である
ことを特徴とする請求項６記載の素子の転写方法。8. The method for transferring an element according to claim 6, wherein the adhesive is an ultraviolet light curable resin. 【請求項９】 前記接着剤は、熱硬化型と併用された樹
脂であることを特徴とする請求項８記載の素子の転写方
法。9. The method of transferring an element according to claim 8, wherein the adhesive is a resin used in combination with a thermosetting type. 【請求項１０】 前記接着剤はエポキシ樹脂であること
を特徴とする請求項９記載の素子の転写方法。10. The method of transferring an element according to claim 9, wherein the adhesive is an epoxy resin. 【請求項１１】 前記素子を前記接着領域に転写した
後、前記接着剤層全体を硬化させることを特徴とする請
求項１記載の素子の転写方法。11. The method for transferring an element according to claim 1, wherein after the element is transferred to the adhesion region, the entire adhesive layer is cured. 【請求項１２】 前記接着剤層を加熱することにより前
記接着剤層全体を硬化させることを特徴とする請求項１
０記載の素子の転写方法。12. The adhesive layer as a whole is cured by heating the adhesive layer.
0. The transfer method of the element of 0. 【請求項１３】 前記素子は、発光素子であることを特
徴とする請求項１記載の素子の転写方法。13. The method of transferring an element according to claim 1, wherein the element is a light emitting element. 【請求項１４】 前記発光素子は、発光ダイオードであ
ることを特徴とする請求項１３記載の素子の転写方法。14. The method of transferring an element according to claim 13, wherein the light emitting element is a light emitting diode. 【請求項１５】 前記発光素子は、ＧａＮ系化合物半導
体により形成された素子であることを特徴とする請求項
１３記載の素子の転写方法。15. The device transfer method according to claim 13, wherein the light emitting device is a device formed of a GaN-based compound semiconductor. 【請求項１６】 第一基板上に配列された複数の素子を
第二基板上に再配列する素子の配列方法において、 前記第一基板上で前記素子が配列された状態よりは離間
した状態となるように前記素子を転写して一時保持用部
材に当該素子を保持させる第一転写工程と、 前記第一時保持用部材に保持された前記素子をさらに離
間して前記第二基板上に転写する第二転写工程とを有
し、 前記第一転写工程においては、前記一時保持用部材に接
着剤層を形成するとともに、前記接着剤層に光を選択的
に照射することにより接着領域と非接着領域とを形成
し、前記接着領域に転写対象となる素子を転写すること
を特徴とする素子の配列方法。16. A method of arranging a plurality of elements arranged on a first substrate on a second substrate in a rearranged state in which the elements are separated from each other on the first substrate. The first transfer step of transferring the element to hold the element on the temporary holding member so that the element held on the first temporary holding member is further separated and transferred onto the second substrate. In the first transfer step, the adhesive layer is formed on the temporary holding member, and the adhesive area is not exposed by selectively irradiating the adhesive layer with light. An element arranging method comprising forming an adhesive area and transferring an element to be transferred to the adhesive area. 【請求項１７】 発光素子をマトリクス状に配置した画
像表示装置の製造方法において、 前記第一基板上で前記発光素子が配列された状態よりは
離間した状態となるように前記発光素子を転写して一時
保持用部材に該発光素子を保持させる第一転写工程と、 前記一時保持用部材に保持された前記発光素子をさらに
離間して前記第二基板上に転写する第二転写工程を有
し、 前記第一転写工程においては、前記一時保持用部材に接
着剤層を形成するとともに、前記接着剤層に光を選択的
に照射することにより接着領域と非接着領域とを形成
し、前記接着領域に転写対象となる素子を転写すること
を特徴とする画像表示装置の製造方法。17. A method of manufacturing an image display device in which light emitting elements are arranged in a matrix, wherein the light emitting elements are transferred so that the light emitting elements are spaced apart from the arranged state of the light emitting elements on the first substrate. And a second transfer step of transferring the light emitting element held by the temporary holding member to the second substrate while further separating the light emitting element held by the temporary holding member. In the first transfer step, an adhesive layer is formed on the temporary holding member, and an adhesive region and a non-adhesive region are formed by selectively irradiating the adhesive layer with light, A method for manufacturing an image display device, which comprises transferring an element to be transferred to a region.
JP2002143076A 2002-05-17 2002-05-17 Transferring method and arraying method for element, and manufacturing method for image display device Pending JP2003332523A (en)

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JP2010045287A (en) * 2008-08-18 2010-02-25 Sony Corp Transfer method for element
JP2011129901A (en) * 2009-11-19 2011-06-30 Mitsubishi Chemicals Corp Method of manufacturing semiconductor light emitting device
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