CN103346476B - Photonic crystal nano cavity Quantum Rings single photon emission device and preparation method thereof - Google Patents
Photonic crystal nano cavity Quantum Rings single photon emission device and preparation method thereof Download PDFInfo
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Abstract
Photonic crystal nano cavity Quantum Rings single photon emission device and preparation method thereof, belong to quantum information science field, for solving the single-photon source Problems existing of single quantum dot microcavity, grown buffer layer, lower Bragg reflector, optical defect layer and upper Bragg mirror successively on substrate, top electrode contact layer growth neighboring area on upper Bragg mirror, the growth of bottom electrode contact layer is below substrate; Air hole-semiconductor that the horizontal two-dimensional photon crystal structure in surface is made up of micro-nano technology is formed, inner transverse resonant cavity optics yardstick is the half of the gain wavelength of Quantum Rings, and horizontal 2 D photon crystal cavity modes wavelength mates with the gain wavelength of Quantum Rings; Described Quantum Rings is positioned in the middle of optical defect layer, and is positioned at the three-dimensional Na Qiang center of Bragg mirror, lower Bragg reflector and horizontal two-dimensional photon crystal structure formation; Adopt Quantum Rings as luminescence medium, quantum efficiency is higher; Quantum Rings material can cover the wave band that quantum dot cannot cover.
Description
Technical field
The present invention relates to photonic crystal nano cavity Quantum Rings single photon emission device and preparation method thereof, belong to quantum information science technical field.
Background technology
Single-photon source be realize single photon quantum bit, photon quantum key transmissions, light quantum calculate and the key components of quantum network, high performance single-photon source contributes to the manipulation realizing monochromatic light quantum state, build quantum cryptography net and quantum computer, brand-new change will be brought to the mankind to the transmission of information and process.From the angle of application, if be applied to quantum communication, desirable single-photon source should be electric drive, working and room temperature, be operated in communication band (850nm, 1310nm and 1550nm), high Efficiency of single photon emission, high clock frequency, if calculate for light quantum, then more wish that it has integration concurrently.
The method producing single photon has multiple, as laser attenuation, nonlinear dielectric parametric down conversion and the single-photon source based on single quantum dot micro-cavity structure.Based on the single-photon source of single quantum dot microcavity, if China Patent Publication No. is CN1638218, publication date is on July 13rd, 2005, name is called " a kind of single quantum dot embedding optical microcavity for single-photon source and preparation method ", and described device architecture limits single quantum dot with micro-cavity structure to realize single photon emission.But, quantum dot microcavity single-photon source is also faced with a lot of problem, as: 1) because the restriction that can be with, this kind of device is most luminous at 920nm-1300nm wave band, 850nm wave band cannot be covered, and owing to lacking high performance single-photon detector at >1100nm wave band, the wavelength of research at present mainly concentrates on 920-940nm scope; 2) In(Ga of long wavelength) As/GaAs quantum dot has multiple energy level, excitonic luminescence is complicated, and the separation of cavity energy level becomes very little (8-10meV), causes the easy thermalization of charge carrier, gain occurs saturated, is difficult to realize high performance single photon emission.
Theoretically, the materials and structures possessing single two energy levels can produce single photon, and the material system therefore expanding two new energy levels is also the developing direction obtaining high-performance single-photon source.The present invention mainly refers to single Quantum Rings single-photon source.Quantum Rings is a kind of low-dimension nano material, has discrete level system, can realize single photon emission.
Summary of the invention
The present invention, in order to solve the single-photon source Problems existing of prior art single quantum dot microcavity, provides a kind of throughput subring to realize device of efficient single photon emission and preparation method thereof.
For solving the problem, the technical scheme that the present invention takes is as follows:
Photonic crystal nano cavity Quantum Rings single photon emission device, structure comprises: surperficial horizontal two-dimensional photon crystal structure, top electrode, P type Bragg mirror, optical defect layer, N-type Bragg mirror, resilient coating, substrate, bottom electrode and Quantum Rings; Grown buffer layer, N-type Bragg mirror, optical defect layer and P type Bragg mirror successively on substrate, top electrode growth is in P type Bragg mirror upper surface neighboring area, and bottom electrode growth is below substrate.
Air hole-semiconductor that the horizontal two-dimensional photon crystal structure in described surface is made up of micro-nano technology is formed, inner transverse resonant cavity optics yardstick is the half of Quantum Rings gain wavelength, and horizontal 2 D photon crystal cavity modes wavelength mates with the gain wavelength of Quantum Rings;
Described Quantum Rings is positioned in the middle of optical defect layer, and is positioned at the three-dimensional Na Qiang center of P type Bragg mirror, N-type Bragg mirror and horizontal two-dimensional photon crystal structure formation.
In the horizontal two-dimensional photon crystal structure in described surface airport hole vertically downward the degree of depth to the random layer of N-type Bragg mirror.
Described top electrode and bottom electrode are made by standard metal deposition program, and position can be up-down structure, also can be coplanar-electrode structures.
The reflectivity of described P type Prague transmitting mirror is less than the reflectivity of N-type Bragg mirror.
N-type Bragg mirror is alternately form with two of backing material Lattice Matching kinds of different refractivity materials; P type Bragg mirror can be made up of Lattice Matching refraction materials or dielectric material.
The chamber pattern wavelength of the resonant cavity that horizontal two-dimensional photon crystal structure inside, surface is formed is consistent with the gain wavelength of Quantum Rings, and the optical thickness between P type Bragg mirror and N-type Bragg mirror is the half of Quantum Rings gain wavelength.
The preparation method of photonic crystal nano cavity Quantum Rings single photon emission device, comprises the following steps:
Step one: the GaAs adulterated at Grown Si, as resilient coating; Then N-type Bragg mirror is grown, i.e. alternating growth Al on the buffer layer
0.9ga
0.1as and Al
0.1ga
0.9as material, the reflectivity >95% of N-type Bragg mirror, N-type Bragg mirror thickness is that 1/4 wavelength condition and nd=1/4 λ determine according to single layer optical thickness, and wavelength X is the emission wavelength of Quantum Rings;
Step 2: growing optics thickness is the Al of 1/4 wavelength
0.3ga
0.7as, undopes, as the latter half of optical defect layer;
Step 3: locating growth quantum ring, concrete grammar is self-organizing growth, first, electron beam exposure forms the circular pattern of diameter 15-20nm, circular pattern can be that 1 μm of distance is along surperficial x-y both direction periodic distribution according to the cycle, wet etching forms the shallow hole that diameter is one by one 15-20nm, dark about 20nm at circular pattern place, as the forming core anchor point of Quantum Rings growth; Then, drop epitaxy growth GaAs self-organizing Quantum Rings, main flow is, underlayer temperature is down to the growth temperature of setting, closes As source, deposits Ga drop, formation volume subring of then annealing under As atmosphere after 1 minute; The growth temperature of setting can be 300-600 ° of C;
Step 4: Al Quantum Rings after growth growing 1/4 wavelength
0.3ga
0.7as, undopes, as the first half of optical defect layer;
Step 5: growing P-type Bragg mirror, alternating growth Al
0.9ga
0.1as and Al
0.8ga
0.2as, p-type doping content is between 1 × 10
17cm
-3to 5 × 10
17cm
-3between, thickness is that 1/4 wavelength condition is determined according to single layer optical thickness, and wavelength is the gain wavelength of Quantum Rings, then the highly doped GaAs of the p-type of growth thickness >50nm, as electrode contact, and doping content >2 × 10
18cm
-3, extension sample edge leaves board marker, not grown covering;
Step 6: electron beam exposure formation take central point as the photon crystal micro cavity figure of symmetry, figure cycle a>100nm, representative value is 500nm, the radius of air hole is 0.28a, periodicity >5, middle is retain, planless resonant cavity, is of a size of 1 cycle; On the basis of above-mentioned figure, dry etching forms air hole, forms 2 D photon crystal with the semi-conducting material retained;
Step 7: upper surface band photoresist depositing Ti-Au after photolithographic exposure, forms top electrode; Employing standard lift-off stripping technology, exposes bright dipping porose area, then substrate thinning, and deposition AuGeNi, forms bottom electrode;
Step 8: by the periodic structure device joint forming unit device of above-mentioned formation, be welded in heat sink on, and pressure welding goes between on top electrode, for adding forward voltage, bottom electrode is connected with heat sink, for adding negative voltage, result in formation of the present invention's electrically driven (operated) photonic crystal nano cavity Quantum Rings single photon emission device.
Come the face degree of controlled quentity controlled variable subring, profile and size by adjusting the growth temperature, droplet deposition amount and the annealing time that set in step 3, thus emission wavelength regulation.
In step 3, the method for increment subring replaces with dry etching preparation, is specially, growth 10nmGaAs, and electron beam exposure forms the annulus of diameter 30nm, internal diameter 10nm, wet etching, and about degree of depth 10nm, removes photoresist, clean.
The invention has the advantages that: 1) adopt Quantum Rings as luminescence medium, quantum efficiency is higher; 2) Quantum Rings material can cover the 850nm communication band that quantum dot cannot cover; 3) Quantum Rings is located growth, and three-D photon crystal resonant cavity is also that positioning is standby, the two location matches, and stiffness of coupling is high; 4) resonant cavity is three dimensionality photonic crystal nano cavity, and optics yardstick is half-wavelength, and volume is little, and light restriction is better, and microcavity enhancement effect is higher; 5) wave band there is not stress and lattice mismatch issue in Material growth, fault in material is low, 6) covered can make full use of high performance silicon avalanche diode (APD) and carry out single photon detection.
Accompanying drawing explanation
Fig. 1 is the structural representation of the photonic crystal nano cavity Quantum Rings single photon emission device in the present invention.
Fig. 2 is surperficial horizontal two-dimensional photon crystal structure light field restriction analog result figure in the embodiment of the present invention 1.
Fig. 3 is the profile design sketch of single Quantum Rings in embodiment 1 in the present invention.
In figure: 1, horizontal two-dimensional photon crystal structure, 2, top electrode, 3, P type Bragg mirror, 4, optical defect layer, 5, N-type Bragg mirror, 6, resilient coating, 7, substrate, 8, bottom electrode, 9, Quantum Rings.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail:
As shown in Figure 1, photonic crystal nano cavity Quantum Rings single photon emission device of the present invention, adopts single Quantum Rings as luminescence medium, and photonic crystal formation resonant cavity strengthens Quantum Rings and is coupled with the resonance in chamber.This emitting device structure comprises: surperficial horizontal two-dimensional photon crystal structure 1, top electrode 2, P type Bragg mirror 3, optical defect layer 4, N-type Bragg mirror 5, resilient coating, substrate 7, bottom electrode 8 and Quantum Rings 9.Grown buffer layer 6, N-type Bragg mirror 5, optical defect layer 4 and upper Bragg mirror 3 successively on substrate 7, top electrode 2 grows two end faces on P type Bragg mirror 3, and bottom electrode 8 grows below substrate 7.
Air hole-semiconductor that the horizontal two-dimensional photon crystal structure 1 in surface is made up of micro-nano technology is formed, inner formation transverse resonance chamber, its optics yardstick is the half of the gain wavelength of Quantum Rings, and the mode of resonance wavelength in transverse resonance chamber mates with the gain wavelength of Quantum Rings.
Quantum Rings 9 is positioned in the middle of optical defect layer 4, and is positioned at the three-dimensional Na Qiang center of P type Bragg mirror 3, N-type Bragg mirror 5 and horizontal two-dimensional photon crystal structure 1 formation.
P type Bragg mirror 3 reflectivity is less than the reflectivity of N-type Bragg mirror 5.The chamber pattern wavelength of the resonant cavity formed mates with the gain wavelength of Quantum Rings 9, and the optical thickness between P type Bragg mirror 3 and N-type Bragg mirror 5 is the half of the gain wavelength of Quantum Rings 9.Bottom Bragg mirror is alternately made up of two kinds of different refractivity materials with backing material Lattice Matching, top Bragg mirror can by having different refractivity, lattice matched materials is formed, also can be made up of the dielectric material of different refractivity.
Described top electrode 2 and bottom electrode 7 are made by standard metal deposition program, and position can be up-down structure, also can be coplanar-electrode structures, determine according to semiconductor ohmic contact heavily doped layer position.
Embodiment 1
For GaAs/Al (Ga) As Quantum Rings, Quantum Rings preparation method is self-organizing growth, and concrete preparation method is as follows for photonic crystal nano cavity Quantum Rings single photon emission device of the present invention:
Step one: the GaAs growing 300nmSi doping on the highly doped GaAs substrate 7 of N-shaped, as resilient coating 6, doping content 2 × 10
18cm
-3; Continue to grow N-type Bragg mirror 5 on resilient coating 6, be specially 30 couples of Al
0.9ga
0.1as and Al
0.1ga
0.9as material alternating growth, makes the reflectivity >95% of N-type Bragg mirror 5, and Si doping content is 1 × 10
18cm
-3, N-type Bragg mirror 5 thickness is that 1/4 wavelength condition and nd=1/4 λ determine according to single layer optical thickness, and wavelength is Quantum Rings 9 emission wavelength;
Step 2: growing optics thickness is the Al of 1/4 wavelength
0.3ga
0.7as undopes, as the latter half of optical defect layer 4;
Step 3: locating growth quantum ring 9, is specially: first, electron beam exposure forms the circular pattern of diameter 20nm, and this circular pattern diameter range can be 15-20nm.Circular pattern can be that 1 μm of distance is evenly distributed along upper surface both direction according to the cycle.Wet etching forms the shallow hole that diameter is one by one about 20nm, dark about 20nm at circular pattern place, as the forming core anchor point of Quantum Rings growth.Then, drop epitaxy growth GaAs self-organizing Quantum Rings, main flow is as follows: substrate 7 is down to design temperature, closes As source, deposits Ga drop, formation volume subring 9 of then annealing under As atmosphere after 1 minute.Growth design temperature can be 300-600 ° of C.The face degree of controlled quentity controlled variable subring 9, profile and size is come by adjusting growth temperature, droplet deposition amount and annealing time, thus emission wavelength regulation, as shown in Figure 3, be Quantum Rings 9 outline drawing grown.
Step 4: Al Quantum Rings 9 after growth growing 1/4 wavelength
0.3ga
0.7as, undopes, as the first half of optical defect layer 4.
Step 5: growing P-type Bragg mirror 3, alternating growth 15 couples of Al
0.9ga
0.1as and Al
0.8ga
0.2as, for reducing absorption loss, p-type doping content is between 1 × 10
17cm
-3to 5 × 10
17cm
-3between, thickness is that 1/4 wavelength condition is determined according to single layer optical thickness, and wavelength is Quantum Rings 9 gain wavelength, then, and growth >50nmp type doping content >2 × 10
18cm
-3gaAs top electrode 2, extension sample edge leaves board marker, not grown covering.
Step 6: electron beam exposure formed as shown in Figure 2 take central point as the photon crystal micro cavity figure of symmetry, figure cycle a>100nm, here a=500nm is got, the radius of air hole is 0.28a, periodicity >5, here get 8 cycles, middle is retain, planless resonant cavity, is of a size of 1 cycle.On the basis of above-mentioned figure, dry etching forms air hole, forms 2 D photon crystal with the semi-conducting material retained;
Step 7: upper surface band photoresist depositing Ti-Au after photolithographic exposure, forms top electrode 2; Employing standard lift-off stripping technology, exposes bright dipping porose area, the photon sent can be emitted in low-loss, then substrate thinning, and deposition AuGeNi, forms bottom electrode 8, for the pulse current injectingt of device.
Step 8: by the periodic structure device joint forming unit device of above-mentioned formation, be welded in heat sink on, and pressure welding goes between on top electrode 2, for adding forward voltage, bottom electrode 8 is connected with heat sink, for adding negative voltage, result in formation of the present invention's electrically driven (operated) photonic crystal nano cavity Quantum Rings single photon emission device.
Embodiment 2
For GaAs/Al (Ga) As Quantum Rings, Quantum Rings preparation method can also be dry etching preparation, just step 3 in the inventive method is changed to accordingly: growth 10nm GaAs, electron beam exposure forms the annulus of diameter 30nm, internal diameter 10nm, wet etching, about degree of depth 10nm, removes photoresist, clean, the Al of epitaxial growth 1/4 wavelength
0.3ga
0.7as, undopes.
Claims (3)
1. a preparation method for photonic crystal nano cavity Quantum Rings single photon emission device, is characterized in that, comprise the following steps:
Step one: at the GaAs of substrate (7) upper growth Si doping, as resilient coating (6); Then N-type Bragg mirror (5) is grown, namely at the upper alternating growth Al of resilient coating (6)
0.9ga
0.1as and Al
0.1ga
0.9as material, the reflectivity >95% of N-type Bragg mirror (5), N-type Bragg mirror (5) thickness is that 1/4 wavelength condition and nd=1/4 λ determine according to single layer optical thickness, and wavelength X is the emission wavelength of Quantum Rings (9);
Step 2: growing optics thickness is the Al of 1/4 wavelength
0.3ga
0.7as, undopes, as the latter half of optical defect layer (4);
Step 3: locating growth quantum ring (9), concrete grammar is self-organizing growth, first, sample surfaces electron beam exposure after step 2 forms the circular pattern of diameter 15-20nm, circular pattern can be that 1 μm of distance is along surperficial x-y both direction periodic distribution according to the cycle, wet etching forms diameter one by one at circular pattern place be 15-20nm, the dark shallow hole for 20nm, as the forming core anchor point that Quantum Rings (9) grows; Then, by drop epitaxy growth GaAs self-organizing Quantum Rings (9), main flow is, substrate (7) temperature is down to the growth temperature of setting, close As source, deposit Ga drop after 1 minute in sample surfaces, then under As atmosphere, annealing forms GaAs Quantum Rings (9); The growth temperature range of setting is 300-600 DEG C;
Step 4: the Al of upper growth 1/4 wavelength of Quantum Rings (9) after growth
0.3ga
0.7as, undopes, as the first half of optical defect layer (4);
Step 5: growing P-type Bragg mirror (3), alternating growth Al
0.9ga
0.1as and Al
0.8ga
0.2as, p-type doping content is between 1 × 10
17cm
-3to 5 × 10
17cm
-3between, thickness is that 1/4 wavelength condition is determined according to single layer optical thickness, and wavelength is the gain wavelength of Quantum Rings (9), then the highly doped GaAs of the p-type of growth thickness >50nm, as electrode contact, doping content >2 × 10
18cm
-3, extension sample edge leaves board marker, not grown covering;
Step 6: electron beam exposure formation take central point as the photon crystal micro cavity figure of symmetry, figure cycle a>100nm, the radius of air hole is 0.28a, periodicity >5, middle is retain, planless resonant cavity, is of a size of 1 cycle; On the basis of above-mentioned figure, dry etching forms air hole, forms 2 D photon crystal with the semi-conducting material retained;
Step 7: the even glue of sample upper surface after step 6, photo-etching machine exposal develops, and forms electrode pattern on a photoresist, and band photoresist depositing Ti-Au, forms top electrode (2); Employing standard lift-off stripping technology, exposes bright dipping porose area, and then substrate (7) is thinning, and deposition AuGeNi, forms bottom electrode (8);
Step 8: by the periodic structure device cleavage forming unit device of above-mentioned formation, be welded in heat sink on, and pressure welding goes between on top electrode (2), for adding forward voltage, bottom electrode (8) is connected with heat sink, for adding negative voltage, result in formation of the present invention's electrically driven (operated) photonic crystal nano cavity Quantum Rings single photon emission device.
2. the preparation method of a kind of photonic crystal nano cavity Quantum Rings single photon emission device according to claim 1, it is characterized in that, come the face degree of controlled quentity controlled variable subring (9), profile and size by adjusting the growth temperature, droplet deposition amount and the annealing time that set in step 3, thus emission wavelength regulation.
3. the preparation method of a kind of photonic crystal nano cavity Quantum Rings single photon emission device according to claim 1, it is characterized in that, the method of step 3 increment subring (9) replaces with standard dry etching preparation method, be specially, the GaAs of growth 10nm thickness, electron beam exposure forms the annulus of external diameter 30nm, internal diameter 10nm, wet etching, degree of depth 10nm, removes photoresist, clean.
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| CN109478763A (en) * | 2017-06-29 | 2019-03-15 | 华为技术有限公司 | A kind of method and system of single photon source device, single photon emission |
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