CN206541846U - A kind of ring cavity nano wire electrical pumping single-photon source device - Google Patents
A kind of ring cavity nano wire electrical pumping single-photon source device Download PDFInfo
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- CN206541846U CN206541846U CN201720046617.6U CN201720046617U CN206541846U CN 206541846 U CN206541846 U CN 206541846U CN 201720046617 U CN201720046617 U CN 201720046617U CN 206541846 U CN206541846 U CN 206541846U
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Abstract
The utility model discloses a kind of ring cavity nano wire electrical pumping single-photon source device, it is characterised in that：Including p-type electrode, pin nano wires, the quantum dot being embedded into nano wire, multilayer concentric ring cavity, n-type electrode, n-type material and substrate.The advantage of this device is：While electrical pumping work is realized, the annular Bragg microcavity constituted using multilayer concentric annulus, in the center of circle, quantum dot sites produce the enhancing of electromagnetic field local, the radiation efficiency of quantum dot single-photon source can be strengthened using Purcell effect, the diverging of photon can be limited in the two spaces dimension perpendicular to nano wire again, makes single photon along the outgoing of nano wire direction, be greatly enhanced light Collection utilization efficiency.Ring cavity nano wire electrical pumping single-photon source device of the present utility model can be widely applied to quantum information, quantum calculation, quantum authentication, quantum accurate measurement association area.
Description
Technical field
The utility model is related to single-photon source, semiconductor micro-nano photonic device, quantum information field, specifically refers to a kind of ring
Chamber nano wire electrical pumping single-photon source device.
Background technology
Single-photon source is not only quantum information processing, quantum cryptography, the linear optical computing of quantum and quantum cryptology
Important component, microabsorption measurement, ultra-high sensitive magnetic-field measurement, biological fluorescent labelling with imaging etc. field also have weight
Want application value.In the generation scheme of numerous single photon emissions, the single-photon source based on quantum dot compares other single-photon sources
Suffer from very big superiority in every respect, such as have breadth of spectrum line is narrow, oscillator strength is high, will not occur photofading or flicker,
Time jitter is small, repetition rate is high, emission band can cover each wave band from ultraviolet to infrared, suitable for electric pump etc..Generally,
Quantum dot emission single photon is all not have directive, and its spontaneous radiation efficiency in free space is low, cause be difficult
It is real practical.
In order to improve the emission effciency of single-photon source, high-quality single-photon source is obtained, quantum dot can be placed in microcavity,
Can be by greatly compared with the spontaneous radiation in free space using the spontaneous radiation of atom in purcell effects, i.e. microcavity
Strengthen, so that the quantum efficiency of single photon emission can be improved using microcavity.For electric pump device, the presence of microcavity can
To greatly reduce the operating voltage of electrical pumping, so as to improve the stability of device.Typically use photon crystal micro cavity or DBR
Microcavity obtains high-quality single-photon source.However, photon crystal micro cavity and electrical pumping device architecture compatibility be not good, and to short
Its physical dimension of ripple wave band is small, it is very big to prepare；DBR microcavitys then can only be in one dimension limitation light of vertical direction, Er Qieqi
It is required that quantum dot emission wavelength is accurately aligned with DBR chambers resonant wavelength, cause the high-quality DBR microcavitys suitable for electric pump to extension
Equipment requirement is high, it is big to prepare difficulty.
Utility model content
The purpose of this utility model is to overcome that above-mentioned of the prior art not enough there is provided a kind of suitable electrical pumping, preparation
It is simple and the ring cavity nano wire electrical pumping single-photon source device of light can be limited in two dimensions.
To achieve the above object, the utility model is as follows using technical scheme：
A kind of ring cavity nano wire electrical pumping single-photon source device, from top to bottom includes successively：P-type electrode, pin nano wires,
Quantum dot, multilayer concentric ring cavity, n-type electrode, lower floor's n-type material and substrate；Wherein：
It is for pin nanometers above lower floor's n-type material, lower floor's n-type material that the substrate, which is located above the bottom, substrate,
Line, quantum dot, multilayer concentric ring cavity, n-type electrode, p-type electrode are located above pin nano wires；
The multilayer concentric ring cavity is located at the outer layer of pin nano wires by the center of circle of pin nano wires；
The n-type electrode is located at the outer layer of multilayer concentric ring cavity using pin nano wires as the center of circle in a ring, and close to lower floor n
Section bar material（6）Edge；
The pin nano wires are located on the center of lower floor's n-type material, and quantum dot embedding is in pin nano wires（2）It is middle.
The one or more that the material of the p-type electrode includes but is not limited in graphene, ITO, AZO, Au, Ti, Ni, Pt
Mixing.For using the material transparent to emergent light from the device of the upward light extraction of substrate face, for going out downwards from substrate back
The device of light uses the material to emergent light high reflection.
The pin nano wires are the pin structures being made up of p-type material, Intrinsical, three layers of n-type material.Wherein, p-type layer material
Material position is in the superiors, with p-type electrode formation Ohmic contact.
The quantum dot is located in the intrinsic layer of pin nano wires, is the material that energy gap is less than pin nano wires, with pin
Nano wire constitutes single quantum together.
The multilayer concentric ring cavity is made up of using pin nano wires as the center of circle the different material of two or more complex refractivity indexes,
Its material includes but is not limited to air, dielectric insulation materials, metal material.The multilayer concentric ring cavity is multilayer concentric annulus structure
Into annular Bragg microcavity, the enhancing of electromagnetic field locals, Ji Nengli can be produced in home position, i.e. pin nanometers of line positions
Strengthen the radiation efficiency of quantum dot single-photon source with Purcell effect, again can be in the two spaces dimension limit perpendicular to nano wire
The diverging of photon processed, makes single photon along the outgoing of nano wire direction, greatly improves light Collection utilization efficiency.
The n-type electrode and lower floor n-type material formation n-type Ohmic contact, the material of n-type electrode is graphene, ITO,
Any one in AZO, Au, Ti, Ni, Pt；
Lower floor's n-type material is consistent with the material of the n-type material in pin nano wires.
The substrate from the device of the downward light extraction of substrate back for using the material transparent to emergent light.
The utility model proposes ring cavity nano wire electrical pumping single-photon source device can upwards go out as from substrate face
The single-photon source device penetrated, and the single-photon source device from the downward outgoing of substrate back can be used as.It is being used as normal emergence single photon
During the device of source, p-type electrode uses the material transparent to emergent light, such as graphene, ITO, AZO；It is being used as back of the body outgoing single-photon source
During device, p-type electrode uses the material to emergent light high reflection, and at this moment such as metal Au, Pt, Ti/Au can limit photon edge
One end outgoing of nano wire n-type, further improves the directionality of single-photon source.
The beneficial effects of the utility model are as follows：
1st, while electrical pumping work is realized, the radiation effect of quantum dot single-photon source can be strengthened using Purcell effect
Rate, again can perpendicular to nano wire two spaces dimension limit photon diverging, make single photon only along the outgoing of nano wire direction,
It is greatly enhanced light Collection utilization efficiency；
2nd, can be as the single-photon source device from the upward outgoing of substrate face, and can be used as from the downward outgoing of substrate back
Single-photon source device, and as the back of the body outgoing single-photon source device when can limit photon only along the outgoing of nano wire one end, enter
One step improves the directionality of single-photon source.
Brief description of the drawings
Fig. 1 is three dimensional structure diagram of the present utility model.
Fig. 2 is structural representation of the structure along circle ring center section shown in Fig. 1.
Fig. 3 is the AlGaN/GaN ring cavity nano wire electrical pumping single-photon source devices based on graphene transparent p-type electrode
Purcell enhancer calculated values.
Wherein, reference is：1 is p-type electrode；2 be pin nano wires；3 be quantum dot；4 be multilayer concentric ring cavity；5 are
N-type electrode；6 be lower floor's n-type material；7 be substrate.
Embodiment
Embodiment 1
A kind of AlGaN/GaN ring cavity nano wire electrical pumping single-photon source devices based on graphene transparent p-type electrode.Such as Fig. 1,
Shown in 2, wherein：1 is graphene transparent p-type electrode；2 receive for p-AlGaN/i-AlGaN/GaN-Qdot/i-AlGaN/n-AlGaN
Rice noodles；3 be to be embedded into the GaN quantum dots in pin AlGaN nano wires；4 be AlGaN and spin on glass（SOG）Constitute
Multilayer concentric ring cavity, the thickness of concentric ring cavity is a quarter of effective wavelength；5 be the n-type electrode that Pt/Au is constituted；6 be n-type
AlGaN epitaxial materials；7 be AlN substrates.The Bragg grating that this structure is made up of multilayer concentric ring cavity limits vertical nano-wire
The photon of two spaces dimension diverging, single photon is launched only along nano wire two ends, with good directionality, and concentric ring
The speed that localized modes photon density increase in microcavity makes quantum dot radiate single photon is greatly increased.Fig. 3 is to be directed to launch wavelength
The Purcell enhancers that 325nm AlGaN/GaN quantum dots/nano wire single-photon source device is calculated, have reached 80 times.
The device preparation method is as follows：
First in the list of AlN Grown p-AlGaN/i-AlGaN/GaN-Qdot/i-AlGaN/n-AlGaN sandwich constructions
SQW epitaxial wafer；Then the nanometer figure of annular concentric and center circle is being produced by beamwriter lithography or nano impression thereon
Shape；Thereafter ring cavity nano thread structure is produced using dry etching combination wet etching；Spin on glass is utilized afterwards（SOG）Will
The space filling of ring cavity, and in nano wire apical growth graphene transparent p-type electrode；It is last to etch annular in ring cavity structure peripheral
Table top simultaneously deposits Pt/Au n-type electrodes.
Embodiment 2
A kind of InGaAs/InAs ring cavity nano wire electrical pumping single-photon source devices based on Ti/Au high reflection p-type electrodes.Such as
Fig. 1, shown in 2, wherein：1 is Ti/Au high reflection p-type electrodes；2 be p-InGaAs/i-InGaAs/InAs/i-InGaAs/n-
InGaAs nano wires；3 be to be embedded into the InAs quantum dots in pin InGaAs nano wires；4 be Al2O3The multilayer constituted with air
Concentric ring cavity, the thickness of concentric ring cavity is a quarter of effective wavelength；5 be the n-type electrode that Ni/Au is constituted；6 be n-type
InGaAs epitaxial materials；7 be GaAs substrates.The Bragg grating that this structure is made up of multilayer concentric ring cavity limits vertical nanowires
The photon of line two spaces dimension diverging, the photon dissipated by the limitation of Ti/Au high reflection p-types electrode along nano wire p-type end, so that
Launch the localized modes photon density in single photon, and concentric ring microcavity downwards only along the super substrate back in nano wire n-type one end
The speed that increase makes quantum dot radiate single photon is greatly increased.
The device preparation method is as follows：Circle SiO is first made on gaas substrates2Nano graph mask, then thereon
Selective area growth p-InGaAs/i-InGaAs/InAs/i-InGaAs/n-InGaAs nano thread structures；ALD deposition skill is utilized afterwards
Art is by nano wire periphery Al2O3Fill and lead up, and in apical growth Ti/Au high reflection p-type electrodes；Thereafter it is the center of circle around nano wire
Circular nano figure is produced, and ring cavity structure is produced using dry etching combination wet etching；It is last to be carved in ring cavity structure peripheral
Erosion circular table simultaneously deposits Ni/Au n-type electrodes.
Claims (6)
1. a kind of ring cavity nano wire electrical pumping single-photon source device, it is characterised in that：Including p-type electrode（1）, pin nano wires
（2）, quantum dot（3）, multilayer concentric ring cavity（4）, n-type electrode（5）, lower floor's n-type material（6）And substrate（7）；
The substrate（7）Positioned at the bottom, substrate（7）Above be lower floor's n-type material（6）, lower floor's n-type material（6）Above
For pin nano wires（2）, quantum dot（3）, multilayer concentric ring cavity（4）, n-type electrode（5）, p-type electrode（1）Positioned at pin nano wires
（2）Above；
The multilayer concentric ring cavity（4）With pin nano wires（2）It is located at pin nano wires for the center of circle（2）Outer layer；
The n-type electrode（5）With pin nano wires（2）It is located at multilayer concentric ring cavity in a ring for the center of circle（4）Outer layer, it is and close
Lower floor's n-type material（6）Edge；
The pin nano wires（2）Positioned at lower floor's n-type material（6）Center on, quantum dot（3）It is embedded into pin nano wires（2）In
Between.
2. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that：It is described pin nanometers
Line（2）Pin structures are constituted by p-type material, Intrinsical, n-type material；Wherein, p-type material is located at the superiors, with p-type electrode（1）
Form Ohmic contact.
3. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that：The quantum dot
（3）Positioned at pin nano wires（2）Intrinsic layer in, using energy gap be less than pin nano wires（2）Material, with pin nano wires
（2）Single quantum is constituted together.
4. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that：The multilayer concentric
Ring cavity（4）It is made up of the different material of two or more complex refractivity indexes, its material is air or dielectric insulation materials or metal
Material.
5. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that：The n-type electrode
（5）With lower floor's n-type material（6）Form n-type Ohmic contact.
6. ring cavity nano wire electrical pumping single-photon source device according to claim 1, it is characterised in that：Lower floor's n-type
Material（6）With pin nano wires（2）In n-type material material it is consistent.
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| CN201720046617.6U CN206541846U (en) | 2017-01-16 | 2017-01-16 | A kind of ring cavity nano wire electrical pumping single-photon source device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784213A (en) * | 2017-01-16 | 2017-05-31 | 中国工程物理研究院电子工程研究所 | A kind of ring cavity nano wire electrical pumping single-photon source device |
| CN114265146A (en) * | 2022-01-27 | 2022-04-01 | 中山大学 | Microcavity-waveguide coupling structure for realizing single photon source on chip and design method thereof |
-
2017
- 2017-01-16 CN CN201720046617.6U patent/CN206541846U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784213A (en) * | 2017-01-16 | 2017-05-31 | 中国工程物理研究院电子工程研究所 | A kind of ring cavity nano wire electrical pumping single-photon source device |
| CN106784213B (en) * | 2017-01-16 | 2019-02-22 | 中国工程物理研究院电子工程研究所 | A kind of ring cavity nano wire electrical pumping single-photon source device |
| CN114265146A (en) * | 2022-01-27 | 2022-04-01 | 中山大学 | Microcavity-waveguide coupling structure for realizing single photon source on chip and design method thereof |
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