CN102299243A - Film flip photonic crystal LED chip and manufacturing method thereof - Google Patents
Film flip photonic crystal LED chip and manufacturing method thereof Download PDFInfo
- Publication number
- CN102299243A CN102299243A CN2011102710675A CN201110271067A CN102299243A CN 102299243 A CN102299243 A CN 102299243A CN 2011102710675 A CN2011102710675 A CN 2011102710675A CN 201110271067 A CN201110271067 A CN 201110271067A CN 102299243 A CN102299243 A CN 102299243A
- Authority
- CN
- China
- Prior art keywords
- led chip
- substrate
- photonic crystal
- down mounting
- contact electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 238000003466 welding Methods 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 230000004927 fusion Effects 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005496 eutectics Effects 0.000 claims description 3
- 238000000025 interference lithography Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- 239000002061 nanopillar Substances 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000013079 quasicrystal Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 5
- 230000004907 flux Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- 229910052594 sapphire Inorganic materials 0.000 description 18
- 239000010980 sapphire Substances 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 12
- 229910002601 GaN Inorganic materials 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000035618 desquamation Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 239000002077 nanosphere Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a film flip photonic crystal LED chip and a manufacturing method thereof, wherein the film flip photonic crystal LED chip comprises a substrate, the film flip LED chip is arranged on the substrate, and the substrate is connected with the film flip LED chip through a welding flux; the substrate comprises a heat dissipation base and a metal layer I, II which is arranged on the heat dissipation base and is independent of each other, the LED chip with the film inverted is characterized in that a light emitting layer, a P-type semiconductor layer, a metal reflecting layer and a P-type ohmic contact electrode are sequentially arranged in an area of the lower surface of an N-type semiconductor layer with a photonic crystal structure from top to bottom, the P-type ohmic contact electrode is connected with the metal layer I through solder, and the other area of the lower surface of the P-type ohmic contact electrode is provided with the N-type ohmic contact electrode which is connected with the metal layer II through solder. The invention effectively improves the light-emitting efficiency, reduces the dislocation density of the epitaxial wafer, reduces the thermal resistance, improves the heat dissipation performance, and provides a method for realizing a high-power and high-brightness LED chip.
Description
Technical field
The present invention relates to a kind of high-power and high-luminance light-emitting diode (LED) chip and manufacture method, relate in particular to a kind of film upside-down mounting photonic crystal LED chip and manufacture method thereof.
Background technology
High-power, high-brightness LED has been applied to automotive lighting, indoor and outdoor general illumination, LCD backlit illumination source or the like various fields, along with improving constantly of power and brightness, the continuous reduction of cost, LED finally will replace existing general illumination light source, becomes the new generation of green light source.But LED still faces following challenge technical barrier at present: (1) luminous efficiency is low; (2) power is low; (3) cost height, this has a strong impact on and restricts LED and enters popularizing of general illumination and application more widely and market.Therefore, increase luminous efficiency, improve brightness and power, reducing cost becomes the technical barrier that present LED industry is urgently needed solution badly and overcome.
The version of led chip mainly contains four kinds at present: (1) traditional formal dress (transversary); (2) upside-down mounting (Flip Chip); (3) vertical stratification (vertical thin-film Vertical Thin Film); (4) film upside-down mounting (Thin film Flip Chip).Compare with other three kinds of structures, the film inverted structure has following significant advantage: the lighting area (not having the shading of electrode) that (1) is bigger; (2) be easy to realize LED module (led array); (3) good heat dissipation characteristics.In addition, in order further to improve light extraction efficiency, reduce the dislocation density (improving the epitaxial wafer quality) of epitaxial wafer, (Nano Patterned Sapphire Substrate NPSS) has become present raising and has got optical efficiency and improve epitaxial wafer quality effective technical means the most for photonic crystal technology (Photonic Crystal) and the graphical Sapphire Substrate technology of the size of receiving.
Summary of the invention
The objective of the invention is to, a kind of film upside-down mounting photonic crystal LED chip is provided, another object of the present invention just provides a kind of low cost, makes this kind led chip method efficiently, in enormous quantities.
To achieve these goals, the present invention takes following technical solution:
A kind of film upside-down mounting photonic crystal LED chip comprises: a substrate, be provided with the led chip of film upside-down mounting on the substrate, and connect by scolder between the led chip of substrate and film upside-down mounting; Described substrate comprises cooling base and the metal level I independent of each other, the II that are provided with thereon, the led chip of described film upside-down mounting is, in a zone that includes on the n type semiconductor layer lower surface of photon crystal structure, from up to down be provided with luminescent layer, p type semiconductor layer, metallic reflector, P type Ohm contact electrode successively, described P type Ohm contact electrode is connected with metal level I by scolder; Another zone on lower surface is provided with N type Ohm contact electrode, described N type Ohm contact electrode is connected with metal level II by scolder.
Photon crystal structure on the described n type semiconductor layer comprises periodic structure photonic crystal and aperiodic structure photonic quasi-crystal structure; The geometric parameter of described photonic crystal: the size 100-200nm of nano-pore, lattice constant 300-700nm, the height 50nm-150nm of photonic crystal.
The material of cooling base is a kind of in pottery, aluminium, silicon, chromium, copper, the copper alloy in the described substrate.Metal level I on it or II are any one among Cu, Ti/Al, Ti/Au, Ni/Au or the Cr/Au.
Described P type Ohm contact electrode is any one of Ti/Au, Ni/Au or Cr/Au, thickness 100nm-400nm; N type Ohm contact electrode is any one of Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au, thickness 100-400nm;
Described metallic reflector is any one among Al, the Ag.
The present invention is applicable to the manufacturing of III-V family, II-IV family, III group-III nitride semiconductor luminescent material system light-emitting diode, is particularly useful for the manufacturing of Sapphire Substrate gallium nitride (GaN) base blue LED.
Described luminescent layer comprises multi-layer quantum well structure, double-heterostructure, multiple layer hetero quantum point structure or multi-layer quantum line, and its thickness is 50mm-200nm.
A kind of film upside-down mounting photonic crystal LED manufacturing method of chip comprises following processing step:
(1) has the manufacturing of photon crystal structure patterned substrate;
(2) epitaxial wafer manufacturing;
(3) manufacturing of led chip;
(4) manufacturing of substrate;
(5) led chip and substrate flip-chip weldering;
(6) peel off patterned substrate on the led chip.
Described manufacture method with photon crystal structure patterned substrate:
A) at first, on substrate one of in deposited silicon nitride, silicon dioxide, the nickel as hard mask layer;
B) subsequently, adopt nano impression, laser interference lithography nano-fabrication technique on the resist on the hard mask layer, to generate nano-pore or nano-pillar photon crystal structure;
C) then, be mask layer with the resist, adopt the inductively coupled plasma etching technics, promptly ICP arrives hard mask layer with the figure transfer on the resist;
D) be mask with hard mask layer then, adopt ICP that nano graph is transferred on the substrate;
E) last, remove resist and hard mask layer, and clean substrate, remove the dirt and the oxide of substrate surface, produce and comprise the photon crystal structure patterned substrate.
The manufacture method of described led chip:
A) at first adopt the method for photoetching, etching, electron beam evaporation to make N type Ohm contact electrode;
B) subsequently, the metallic reflector of deposition 50-150nm on p type semiconductor layer;
C) last, adopt the method for electron beam evaporation on metallic reflector, to produce P type Ohm contact electrode.
The described method of peeling off the patterned substrate on the led chip: adopt laser lift-off (Laser Lift-Off, LLO), chemistry is removed or a kind of method of mechanical lapping is removed patterned substrate on the led chip.
Eutectic bonding or fusion bonding are adopted in the upside-down mounting welding of described led chip and heat-radiating substrate.
The method that described epitaxial wafer is made: adopt metal organic chemical deposition extension (MOCVD) technology on patterned substrate, grow successively n type semiconductor layer, luminescent layer, p type semiconductor layer.
For light extraction efficiency and the power that improves LED, the present invention comprehensively by the following technical solutions:
(1) improves light extraction efficiency: introduce photon crystal structure and reflection layer structure;
(2) increase lighting area: adopt inverted structure;
(3) improve the epitaxial wafer quality, patterned substrate reduces the dislocation density of epitaxial wafer;
(4) improve heat dispersion: by adopting substrate desquamation and flip-chip bonded structure, reduce thermal resistance, effectively improve heat dissipation characteristics, improve indirectly and get optical efficiency, and effectively improve its power.
In order to reduce film upside-down mounting photonic crystal LED production cost of chip, the present invention by the following technical solutions:
(1) method of combining nano imprint lithography and plasma etching realizes the graphical of substrate, forms photon crystal structure thereon;
(2) by adopting laser lift-off, chemistry to remove or the method for mechanical lapping is peeled off patterned substrate on the led chip.
The substrate that epitaxial wafer of the present invention uses in manufacture process comprises: sapphire, carborundum (SiC), silicon (Si), gallium nitride (GaN), GaAs (GaAs), zinc oxide (ZnO) or aluminium nitride (AlN).
Advantage of the present invention is:
1) fully in conjunction with photonic crystal, the advantage of size patterned substrate, film reverse installation process received, effectively improve light extraction efficiency, reduce the epitaxial wafer dislocation density, reduce thermal resistance, improve heat dispersion, a kind of method that realizes high brightness, high-power LED chip is provided.
2) one aspect of the present invention is avoided the damage of conventional surface photonic crystal LED for luminescent layer, is not easy to make electrode, and the deficiency that influences the LED electrology characteristic; On the other hand, also effectively combine and receive the advantage of patterned substrate (NPS) and surperficial photonic crystal LED.
3) the present invention is easy to realize LED module (array).
4) the invention provides film upside-down mounting photonic crystal LED chip manufacturing process, have the advantages that production cost is low, efficient, be fit to extensiveization manufacturing.
5) light-emitting diode made of the present invention have that brightness height, power are big, even, the luminous uniformity of far field illumination, light extraction efficiency height, perfect heat-dissipating (thermal resistance is low), low cost of manufacture.
6) the present invention solves the problem that optical efficiency and high efficiency and heat radiation are got in the raising of led chip simultaneously, for the exploitation of power type high brightness LED provides a kind of incorporate solution.
Description of drawings
Fig. 1 is a kind of film upside-down mounting of the present invention photonic crystal LED chip structure schematic diagram.
Fig. 2 is a kind of film upside-down mounting of the present invention photonic crystal LED chip manufacturing process block diagram.
Fig. 3 is an embodiments of the invention film upside-down mounting photonic crystal GaN base light emitting diode chip structural representation.
Fig. 4 A-Fig. 4 C is an embodiment of the invention film upside-down mounting photonic crystal GaN base light emitting diode chip schematic diagram of fabrication technology.
Fig. 5 A-Fig. 5 E is that the embodiment of the invention adopts nano impression and plasma etching (ICP) technology to make the photon crystal structure process schematic representation on Sapphire Substrate.
Fig. 6 is the led chip structural representation that the embodiment of the invention completes based on the graphic sapphire substrate.
1. substrates wherein, 2.LED chip, 3. scolder, 102. metal level I, 103 metal level II, 101. cooling bases, 207. photon crystal structure, 206.N type semiconductor layer, 205. luminescent layers, 204.P type semiconductor layer, 203. metallic reflectors, 202.N type Ohm contact electrode, 201.P the type Ohm contact electrode, 501. Sapphire Substrate, 502. silicon nitrides, 503. resist, 504. figures of receiving yardstick.
Embodiment
The present invention is described in further detail below in conjunction with drawings and Examples.
Fig. 1 is a film upside-down mounting photonic crystal LED chip structure schematic diagram, mainly by substrate 1, and the led chip 2 of the film upside-down mounting on the substrate 1, scolder 3 three parts that connect the led chip 2 of substrate 1 and film upside-down mounting are formed.Substrate 1 is included in metal level I102 independent of each other and metal level II103 and the cooling base 101 which is provided with, metal level I102 can be same material or different materials, the led chip 2 of film upside-down mounting with metal level II103: on a zone of n type semiconductor layer 206 lower surfaces with photon crystal structure 207, from up to down be followed successively by luminescent layer 205, p type semiconductor layer 204, metallic reflector 203, P type Ohm contact electrode 201.Described P type Ohm contact electrode 201 is connected with metal level I102 by scolder 3; Another zone on lower surface is provided with N type Ohm contact electrode 202, described N type Ohm contact electrode 202 and is connected with metal level II103 by scolder 3.
Fig. 2 is a film upside-down mounting photonic crystal LED chip manufacturing process step, comprising:
(1) has the manufacturing of photon crystal structure patterned substrate;
(2) epitaxial wafer manufacturing;
(3) manufacturing of led chip 2;
(4) manufacturing of substrate 1;
(5) led chip 2 passes through scolder 3 flip chip bondings with substrate 1;
(6) peel off patterned substrate on the led chip 2.
Embodiment
Among Fig. 3, with silicon is the cooling base 101 of heat-radiating substrate, metal level on it is Ni/Au, wherein metal level I102 Ni/Au and metal level II103 Ni/Au isolate mutually, metal level I102 links to each other with the solder joint of P type Ohm contact electrode 201 by scolder 3, metal level II103 links to each other with the solder joint of N type Ohm contact electrode 202 by scolder 3, and 102 area is greater than 103; Scolder 3 is plumber's solder 63Sn/37Pb, utilizes the melting welding mode by scolder 3 that the N type Ohm contact electrode 202 and the P type Ohm contact electrode 201 of led chip is bonding with 103 and 102 metal levels on the heat-radiating substrate, realizes conduction and heat conduction dual-use function; The led chip 2 of film upside-down mounting from up to down is provided with: photon crystal structure 207 is nano-pore air column structure, and N-GaN is the p type semiconductor layer 204 of 206,5 layers of InGaN/GaN Multiple Quantum Well of n type semiconductor layer (MQW) luminescent layer 205, P-GaN, the P type Ohm contact electrode 201 that Ag is metallic reflector 203, Cr/Au.Also be provided with the N type Ohm contact electrode 202 of Ti/AI/Ti/Au simultaneously.
The manufacture method of present embodiment:
Fig. 4 A-Fig. 4 C is an embodiment of the invention film upside-down mounting photonic crystal GaN base light emitting diode chip schematic diagram of fabrication technology, and concrete processing step is as follows:
1) has the manufacturing of photon crystal structure patterned substrate
Fig. 5 A-Fig. 5 E adopts nano impression and plasma etching (ICP) technology to make the photon crystal structure process schematic representation on Sapphire Substrate 501, and the concrete processing step of graphic sapphire substrate 501 of size received comprises:
(a) deposited hard mask layer
Fig. 5 A is to adopt plasma reinforced chemical vapour deposition (PECVD) to deposit the silicon nitride 502 (Si of 20nm-100nm on Sapphire Substrate 501
3Ni
4) or silicon dioxide (SiO
2); The silicon nitride 502 of present embodiment deposition 20nm.
(b) imprint nano figure on resist
Fig. 5 B is, at first, and the used resist 503 of spin coating 150nmUV nano impression on silicon nitride; Subsequently, after having the impressing mould of photon crystal structure and Sapphire Substrate 501 and aligning, press to resist, realize the transfer of figure 504 structures to the resist 503 of receiving yardstick on the mould; At last, adopt reactive ion etching process to remove residual layer.503 make the figure 504 of receiving and paying out yardstick on resist.
(c) resist 503 figure transfer are to hard mask layer
Fig. 5 C is, is mask layer with resist 503, adopts inductively coupled plasma reactive ion etching technology, with figure transfer on the resist 503 to hard mask layer silicon nitride 502.
(d) the hard mask layer figure transfer is to Sapphire Substrate 501
Fig. 5 D is, is mask with hard mask layer silicon nitride 502, using plasma reactive ion etching technology, with hard mask layer 502 figure transfer on Sapphire Substrate 501.
(e) remove resist 503 and hard mask layer silicon nitride 502
Fig. 5 E removes resist 503 and hard mask layer silicon nitride 502,, and clean Sapphire Substrate 501.
2) the LED epitaxial wafer is made
Adopt on graphic sapphire substrate 501, grow successively 5 layers of n type semiconductor layer 206, the InGaN/GaN mqw light emitting layer 205 of 70nm altogether of N-GaN of 2 μ m of metal organic chemical deposition extension (MOCVD) technology, the p type semiconductor layer 204 of the P-GaN of 200nm.
3) making of led chip 2
Fig. 6 is, is P type Ohm contact electrode 201 with Cr/Au, and Ti/AI/Ti/Au is a N type Ohm contact electrode 202.At first adopt the method for photoetching, etching, electron beam evaporation to make N type Ohm contact electrode 202, thickness of electrode is 300nm; Subsequently, the Ag metallic reflector 203 of deposition 100nm on the p type semiconductor layer 204 of P-GaN; At last, the method for employing electron beam evaporation deposits the Cr/Au of 200nm on Ag metallic reflector 203, produce P type Ohm contact electrode 201.
4) manufacturing of substrate 1
With silicon is the cooling base 101 of heat-radiating substrate, at first the metal level Ni/Au of deposition 400nm on 101; Subsequently, photoetching and etching technics will be spaced from each other with metal level I102Ni/Au and metal level Ni/Au103.
5) led chip 2 and heat-radiating substrate 1 flip chip bonding
Fig. 4 A, it is the structure behind led chip 2 and heat-radiating substrate 1 flip chip bonding, with plumber's solder 63Sn/37Pb is scolder 3, adopt flip chip bonding technology (fusion bonding) that led chip 2 and heat-radiating substrate 1 is bonding, wherein P type Ohm contact electrode 201 is relative with metal level Ni/Au102, and N type Ohm contact electrode 202 is relative with metal level I103Ni/Au.
6) peel off patterned substrate on the led chip 2
Fig. 4 B is that laser lift-off (Laser Lift-Off, abbreviation LLO) is removed led chip 2 original Sapphire Substrate 501.
Fig. 4 C is the structure of film upside-down mounting photonic crystal GaN base light emitting diode chip.
Eutectic bonding or fusion bonding are adopted in the welding of led chip and heat-radiating substrate 1.
Except nano-imprint process, patterned substrate can also be used nanometer manufacture methods such as laser interference lithography, nanosphere pearly-lustre quarter, optical lithography, electron beam lithography, anodic oxidation aluminium formwork (AAO), block copolymer self assembly.
In the patterned substrate manufacture process, except adopting the air column photon crystal structure, also can adopt medium post photon crystal structure.
In addition, those skilled in the art also can do other variation in spirit of the present invention.Certainly, the variation that these are done according to spirit of the present invention all should be included in the present invention's scope required for protection.
Claims (10)
1. a film upside-down mounting photonic crystal LED chip is characterized in that, comprising: a substrate, be provided with the led chip of film upside-down mounting on the substrate, and connect by scolder between the led chip of substrate and film upside-down mounting; Described substrate comprises cooling base and the metal level I independent of each other, the II that are provided with thereon, the led chip of described film upside-down mounting is, in a zone that includes on the n type semiconductor layer lower surface of photon crystal structure, from up to down be provided with luminescent layer, p type semiconductor layer, metallic reflector, P type Ohm contact electrode successively, described P type Ohm contact electrode is connected with metal level I; Another zone on lower surface is provided with N type Ohm contact electrode, described N type Ohm contact electrode is connected with metal level II.
2. film upside-down mounting photonic crystal LED chip as claimed in claim 1 is characterized in that the photon crystal structure on the described n type semiconductor layer comprises periodic structure photonic crystal and/or aperiodic structure photonic quasi-crystal structure; The geometric parameter of described photonic crystal: the size 100-200nm of nano-pore, lattice constant 300-700nm, the height 50nm-150nm of photonic crystal.
3. film upside-down mounting photonic crystal LED chip as claimed in claim 1 is characterized in that, comprises cooling base in the described substrate, and its material is a kind of in pottery, aluminium, silicon, chromium, copper, the copper alloy.
4. film upside-down mounting photonic crystal LED chip as claimed in claim 1 is characterized in that described P type Ohm contact electrode is any one of Ti/Au, Ni/Au or Cr/Au, thickness 100nm-400nm; N type Ohm contact electrode is any one of Ti/Al, Ti/Au, Cr/Au or Ti/AI/Ti/Au, thickness 100-400nm; Described metallic reflector is any one among Al, the Ag.
5. film upside-down mounting photonic crystal LED chip as claimed in claim 1 is characterized in that described luminescent layer comprises multi-layer quantum well structure, double-heterostructure, multiple layer hetero quantum point structure or multi-layer quantum line, and its thickness is 50mm-200nm.
6. a film upside-down mounting photonic crystal LED manufacturing method of chip is characterized in that, comprises following processing step:
(1) has the manufacturing of photon crystal structure patterned substrate;
(2) epitaxial wafer manufacturing;
(3) manufacturing of led chip;
(4) manufacturing of substrate;
(5) upside-down mounting of led chip and heat-radiating substrate welding;
(6) peel off patterned substrate on the led chip.
7. a kind of film upside-down mounting photonic crystal LED manufacturing method of chip as claimed in claim 6 is characterized in that described manufacture method with photon crystal structure patterned substrate:
A) at first, a kind of in deposited silicon nitride, silicon dioxide, the nickel on substrate as hard mask layer;
B) subsequently, adopt nano impression, laser interference lithography nano-fabrication technique on the resist on the hard mask layer, to generate nano-pore or nano-pillar photon crystal structure;
C) then, be mask layer with the resist after graphical, adopt the inductively coupled plasma etching technics, promptly ICP arrives hard mask layer with the figure transfer on the resist;
D) be mask with hard mask layer then, adopt ICP that nano graph is transferred on the substrate;
E) last, remove resist and hard mask layer, and clean substrate, remove the dirt and the oxide of substrate surface, produce and comprise the photon crystal structure patterned substrate.
8. a kind of film upside-down mounting photonic crystal LED manufacturing method of chip as claimed in claim 6 is characterized in that the manufacture method of described led chip:
A) at first adopt the method for photoetching, etching, electron beam evaporation to make N type Ohm contact electrode;
B) subsequently, the metallic reflector of deposition 50-150nm on p type semiconductor layer;
C) last, adopt the method for electron beam evaporation on metallic reflector, to produce P type Ohm contact electrode.
9. a kind of film upside-down mounting photonic crystal LED manufacturing method of chip as claimed in claim 6, it is characterized in that the described method of peeling off the patterned substrate on the led chip: a kind of method of employing laser lift-off, chemistry removal or mechanical lapping is removed the patterned substrate on the led chip.
10. a kind of film upside-down mounting photonic crystal LED manufacturing method of chip as claimed in claim 6 is characterized in that, eutectic bonding or fusion bonding are adopted in the upside-down mounting welding of described led chip and heat-radiating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102710675A CN102299243A (en) | 2011-09-14 | 2011-09-14 | Film flip photonic crystal LED chip and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102710675A CN102299243A (en) | 2011-09-14 | 2011-09-14 | Film flip photonic crystal LED chip and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102299243A true CN102299243A (en) | 2011-12-28 |
Family
ID=45359527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102710675A Pending CN102299243A (en) | 2011-09-14 | 2011-09-14 | Film flip photonic crystal LED chip and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102299243A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569586A (en) * | 2012-03-15 | 2012-07-11 | 北京工业大学 | Integral-face press-fit type inverted LED (Light Emitting Diode) and manufacturing method thereof |
| CN102709419A (en) * | 2012-05-29 | 2012-10-03 | 东南大学 | Light-emitting diode with cross grating structure and preparation method thereof |
| CN103066178A (en) * | 2012-12-29 | 2013-04-24 | 映瑞光电科技(上海)有限公司 | Inversion photonic crystal light-emitting diode (LED) chip and manufacturing method thereof |
| CN103178168A (en) * | 2013-03-19 | 2013-06-26 | 中国科学院半导体研究所 | Preparation method of air-gap photonic crystal implanted gallium nitride-based light emitting diode |
| CN103456866A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inverted LED chip capable of emitting light omni-directionally |
| CN103579432A (en) * | 2012-08-01 | 2014-02-12 | 新世纪光电股份有限公司 | LED element, manufacturing method thereof, and flip chip LED element |
| CN107046228A (en) * | 2017-04-07 | 2017-08-15 | 华南师范大学 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
| CN108807621A (en) * | 2018-06-29 | 2018-11-13 | 华南理工大学 | The shared 2 D photon crystal LED flip chip and preparation method thereof of illumination communication |
| CN108963050A (en) * | 2018-06-26 | 2018-12-07 | 佛山市国星半导体技术有限公司 | A kind of small spacing LED chip and preparation method thereof |
| CN112117637A (en) * | 2019-06-21 | 2020-12-22 | 智林企业股份有限公司 | Inverted-crystal surface-emitting laser element of electrically excited photonic crystal |
| CN114779508A (en) * | 2022-04-08 | 2022-07-22 | Tcl华星光电技术有限公司 | Display device, manufacturing method thereof and tiled display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008065373A1 (en) * | 2006-11-28 | 2008-06-05 | Luxtaltek Corporation | Pyramidal photonic crystal light emitting device |
| US20090159908A1 (en) * | 2007-12-19 | 2009-06-25 | Philips Lumileds Lighting Company Llc | Semiconductor light emitting device with light extraction structures |
| CN101894894A (en) * | 2009-05-21 | 2010-11-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
| CN101969092A (en) * | 2010-09-16 | 2011-02-09 | 兰红波 | Metal substrate photonic quasi-crystal HB-LED (High-Brightness Light Emitting Diode) chip in vertical structure as well as manufacturing method and application thereof |
| CN101984509A (en) * | 2010-09-28 | 2011-03-09 | 映瑞光电科技(上海)有限公司 | Method for forming blue LED flip chip |
| CN202205811U (en) * | 2011-09-14 | 2012-04-25 | 青岛理工大学 | Film flip-chip photonic crystal LED chip |
-
2011
- 2011-09-14 CN CN2011102710675A patent/CN102299243A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008065373A1 (en) * | 2006-11-28 | 2008-06-05 | Luxtaltek Corporation | Pyramidal photonic crystal light emitting device |
| US20090159908A1 (en) * | 2007-12-19 | 2009-06-25 | Philips Lumileds Lighting Company Llc | Semiconductor light emitting device with light extraction structures |
| CN101894894A (en) * | 2009-05-21 | 2010-11-24 | Lg伊诺特有限公司 | Light emitting device and light emitting device package having the same |
| CN101969092A (en) * | 2010-09-16 | 2011-02-09 | 兰红波 | Metal substrate photonic quasi-crystal HB-LED (High-Brightness Light Emitting Diode) chip in vertical structure as well as manufacturing method and application thereof |
| CN101984509A (en) * | 2010-09-28 | 2011-03-09 | 映瑞光电科技(上海)有限公司 | Method for forming blue LED flip chip |
| CN202205811U (en) * | 2011-09-14 | 2012-04-25 | 青岛理工大学 | Film flip-chip photonic crystal LED chip |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569586A (en) * | 2012-03-15 | 2012-07-11 | 北京工业大学 | Integral-face press-fit type inverted LED (Light Emitting Diode) and manufacturing method thereof |
| CN102709419A (en) * | 2012-05-29 | 2012-10-03 | 东南大学 | Light-emitting diode with cross grating structure and preparation method thereof |
| CN102709419B (en) * | 2012-05-29 | 2014-12-17 | 东南大学 | Light-emitting diode with cross grating structure and preparation method thereof |
| CN103579432A (en) * | 2012-08-01 | 2014-02-12 | 新世纪光电股份有限公司 | LED element, manufacturing method thereof, and flip chip LED element |
| CN103066178B (en) * | 2012-12-29 | 2015-07-29 | 映瑞光电科技(上海)有限公司 | A kind of upside-down mounting photonic crystal LED chip and manufacture method thereof |
| CN103066178A (en) * | 2012-12-29 | 2013-04-24 | 映瑞光电科技(上海)有限公司 | Inversion photonic crystal light-emitting diode (LED) chip and manufacturing method thereof |
| CN103178168A (en) * | 2013-03-19 | 2013-06-26 | 中国科学院半导体研究所 | Preparation method of air-gap photonic crystal implanted gallium nitride-based light emitting diode |
| CN103456866B (en) * | 2013-09-05 | 2017-05-17 | 山东晶泰星光电科技有限公司 | Inverted LED chip capable of emitting light omni-directionally |
| CN103456866A (en) * | 2013-09-05 | 2013-12-18 | 深圳市智讯达光电科技有限公司 | Inverted LED chip capable of emitting light omni-directionally |
| CN107046228A (en) * | 2017-04-07 | 2017-08-15 | 华南师范大学 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
| CN107046228B (en) * | 2017-04-07 | 2019-08-06 | 华南师范大学 | A kind of Electroabsorption Modulated Laser and preparation method thereof |
| CN108963050A (en) * | 2018-06-26 | 2018-12-07 | 佛山市国星半导体技术有限公司 | A kind of small spacing LED chip and preparation method thereof |
| CN108963050B (en) * | 2018-06-26 | 2024-08-30 | 佛山市国星半导体技术有限公司 | Micro-spacing LED chip and manufacturing method thereof |
| CN108807621A (en) * | 2018-06-29 | 2018-11-13 | 华南理工大学 | The shared 2 D photon crystal LED flip chip and preparation method thereof of illumination communication |
| CN112117637A (en) * | 2019-06-21 | 2020-12-22 | 智林企业股份有限公司 | Inverted-crystal surface-emitting laser element of electrically excited photonic crystal |
| CN112117637B (en) * | 2019-06-21 | 2024-03-08 | 富昱晶雷射科技股份有限公司 | Inverted crystal type surface-emitting laser element of electric excitation photon crystal |
| CN114779508A (en) * | 2022-04-08 | 2022-07-22 | Tcl华星光电技术有限公司 | Display device, manufacturing method thereof and tiled display device |
| CN114779508B (en) * | 2022-04-08 | 2024-02-27 | Tcl华星光电技术有限公司 | Display device, manufacturing method thereof and spliced display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102299243A (en) | Film flip photonic crystal LED chip and manufacturing method thereof | |
| CN101901858B (en) | Vertical structure semiconductor devices | |
| US6786390B2 (en) | LED stack manufacturing method and its structure thereof | |
| TWI455345B (en) | Light emitting diode having vertical topology and method of making the same | |
| CN202205811U (en) | Film flip-chip photonic crystal LED chip | |
| CN101673792B (en) | Manufacturing method of GaN-based film LED based on maskless transfer photonic crystal structure | |
| CN101661985B (en) | Manufacturing method of gallium nitride based LED with vertical structure | |
| EP1798781B1 (en) | LED having vertical structure and method for fabricating the same | |
| US7781242B1 (en) | Method of forming vertical structure light emitting diode with heat exhaustion structure | |
| CN103137814A (en) | Light emitting diode with improved light extraction efficiency and methods of manufacturing same | |
| CN108878602B (en) | Manufacturing and transfer printing method for three-primary-color vertical-structure micro LED chip | |
| JP2006521984A (en) | Method for fabricating a group III nitride device and the device so fabricated | |
| CN1964090B (en) | Nitride-based semiconductor device and production method thereof | |
| JP2008047860A (en) | Method of forming rugged surface and method of manufacturing gallium nitride light-emitting diode device using the same | |
| CN101661984B (en) | Manufacturing method of light emitting diode (LED) based on inversed roughened surface Gan-base vertical structure | |
| JP7167330B2 (en) | Ultraviolet LED chip for improving light extraction efficiency and manufacturing method thereof | |
| CN103681996A (en) | UV (Ultraviolet) LED and preparation method thereof | |
| CN102332521A (en) | GaN (gallium nitride)-based LED (light-emitting diode) with N-type electrodes in dotted distribution and manufacturing method thereof | |
| CN107731975B (en) | Nanotube LED and manufacturing method thereof | |
| US20070184568A1 (en) | Method of manufacturing gallium nitride based light emitting diode | |
| CN106486575B (en) | A kind of thin-film light emitting diode chip and preparation method thereof | |
| CN102290513B (en) | High-power high-brightness light-emitting diode chip and manufacturing method thereof | |
| KR20070046174A (en) | Gan based luminescent device on a metal substrate | |
| CN204144301U (en) | A kind of light emitting diode with vertical structure | |
| CN105048284A (en) | Multi-coupled single-photon luminous body and fabrication method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111228 |