JPS52112292A - Semiconductor laser unit and its use - Google Patents

Semiconductor laser unit and its use

Info

Publication number
JPS52112292A
JPS52112292A JP2948776A JP2948776A JPS52112292A JP S52112292 A JPS52112292 A JP S52112292A JP 2948776 A JP2948776 A JP 2948776A JP 2948776 A JP2948776 A JP 2948776A JP S52112292 A JPS52112292 A JP S52112292A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser unit
oscillation light
simplified
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2948776A
Other languages
Japanese (ja)
Other versions
JPS5819151B2 (en
Inventor
Kunio Ito
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP51029487A priority Critical patent/JPS5819151B2/en
Publication of JPS52112292A publication Critical patent/JPS52112292A/en
Publication of JPS5819151B2 publication Critical patent/JPS5819151B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Abstract

PURPOSE:The oscillation light emitted from one semiconductor laser elements is put into active region of another semiconductor laser element in order to obtain the oscillation light of the same mode as the former light. In this way, the information decision is simplified.
JP51029487A 1976-03-17 1976-03-17 How to use semiconductor laser equipment Expired JPS5819151B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51029487A JPS5819151B2 (en) 1976-03-17 1976-03-17 How to use semiconductor laser equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51029487A JPS5819151B2 (en) 1976-03-17 1976-03-17 How to use semiconductor laser equipment

Publications (2)

Publication Number Publication Date
JPS52112292A true JPS52112292A (en) 1977-09-20
JPS5819151B2 JPS5819151B2 (en) 1983-04-16

Family

ID=12277422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51029487A Expired JPS5819151B2 (en) 1976-03-17 1976-03-17 How to use semiconductor laser equipment

Country Status (1)

Country Link
JP (1) JPS5819151B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3535803C1 (en) * 1985-10-08 1986-09-11 Fa. Carl Freudenberg, 6940 Weinheim Torsional vibration damper
DE3633414A1 (en) * 1986-10-01 1988-04-14 Freudenberg Carl Fa Torsional vibration damper

Also Published As

Publication number Publication date
JPS5819151B2 (en) 1983-04-16

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