JPS56148880A - Single longitudinal mode semiconductor laser - Google Patents

Single longitudinal mode semiconductor laser

Info

Publication number
JPS56148880A
JPS56148880A JP5248880A JP5248880A JPS56148880A JP S56148880 A JPS56148880 A JP S56148880A JP 5248880 A JP5248880 A JP 5248880A JP 5248880 A JP5248880 A JP 5248880A JP S56148880 A JPS56148880 A JP S56148880A
Authority
JP
Japan
Prior art keywords
layer
semiconductor laser
etching
thereafter
longitudinal mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5248880A
Other languages
Japanese (ja)
Inventor
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5248880A priority Critical patent/JPS56148880A/en
Publication of JPS56148880A publication Critical patent/JPS56148880A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

Abstract

PURPOSE:To enhance the efficiency of a semiconductor laser by employing a lateral mode control configuration in a period configuration part to reduce the effective loss and thus reducing the oscillation threshold value. CONSTITUTION:After a buffer layer 2, a photoconductive wave layer 3, an active later 4, a clad layer 5, and a cap layer 6 are continuously grown on a substrate 1, an active part 10 is retained, both the sides of the part 10 are removed by etching to the layer 4, and the layer 3 is exposed. Thereafter, the first and the second mesa parts 30, 40 are formed using photomasks, and the first and the second period configurations 31, 41 are formed by laser light interference exposure method and etching to form the first and the second feedback reflectors 32, 42. Zinc is so diffused in the part 10 on the extension lines of the mesa parts 30, 40 as to reach the layer 5 in a band shape to form a band-shaped current injection 11. Thereafter, positive and negative electrodes 50, 51 are formed.
JP5248880A 1980-04-21 1980-04-21 Single longitudinal mode semiconductor laser Pending JPS56148880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5248880A JPS56148880A (en) 1980-04-21 1980-04-21 Single longitudinal mode semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5248880A JPS56148880A (en) 1980-04-21 1980-04-21 Single longitudinal mode semiconductor laser

Publications (1)

Publication Number Publication Date
JPS56148880A true JPS56148880A (en) 1981-11-18

Family

ID=12916094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5248880A Pending JPS56148880A (en) 1980-04-21 1980-04-21 Single longitudinal mode semiconductor laser

Country Status (1)

Country Link
JP (1) JPS56148880A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152682A (en) * 1983-02-21 1984-08-31 Nippon Telegr & Teleph Corp <Ntt> Distributed reflection type semiconductor laser
US5601731A (en) * 1994-03-09 1997-02-11 Ant Nachrichtentechnik Gmbh Process for the production of an optoelectronic component having a defined axial variation of the coupling coefficient and a defined axial distribution of the phase shift
EP2811592A2 (en) 2013-06-07 2014-12-10 NGK Insulators, Ltd. External resonator type light emitting system
WO2015079939A1 (en) 2013-11-27 2015-06-04 日本碍子株式会社 External-resonator-type light emitting device
WO2015079974A1 (en) 2013-11-27 2015-06-04 日本碍子株式会社 Grating element and external-resonator-type light emitting device
US9331454B2 (en) 2013-11-27 2016-05-03 Ngk Insulators, Ltd. External resonator type light emitting system
US9979157B2 (en) 2014-06-13 2018-05-22 Ngk Insulators, Ltd. External-resonator-type light-emitting device
US10074962B2 (en) 2014-05-01 2018-09-11 Ngk Insulators, Ltd. Grating element and external resonator type light emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509129A (en) * 1973-05-30 1975-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509129A (en) * 1973-05-30 1975-01-30

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152682A (en) * 1983-02-21 1984-08-31 Nippon Telegr & Teleph Corp <Ntt> Distributed reflection type semiconductor laser
US5601731A (en) * 1994-03-09 1997-02-11 Ant Nachrichtentechnik Gmbh Process for the production of an optoelectronic component having a defined axial variation of the coupling coefficient and a defined axial distribution of the phase shift
US9184564B2 (en) 2013-06-07 2015-11-10 Ngk Insulators, Ltd. External resonator type light emitting system
WO2014196553A1 (en) 2013-06-07 2014-12-11 日本碍子株式会社 External resonator-type light emitting device
EP2811592A2 (en) 2013-06-07 2014-12-10 NGK Insulators, Ltd. External resonator type light emitting system
US9627853B2 (en) 2013-06-07 2017-04-18 Ngk Insulators, Ltd. External resonator-type light emitting device
WO2015079939A1 (en) 2013-11-27 2015-06-04 日本碍子株式会社 External-resonator-type light emitting device
WO2015079974A1 (en) 2013-11-27 2015-06-04 日本碍子株式会社 Grating element and external-resonator-type light emitting device
US9331454B2 (en) 2013-11-27 2016-05-03 Ngk Insulators, Ltd. External resonator type light emitting system
US9859684B2 (en) 2013-11-27 2018-01-02 Ngk Insulators, Ltd. Grating element and external-resonator-type light emitting device
US10063034B2 (en) 2013-11-27 2018-08-28 Ngk Insulators, Ltd. External resonator-type light emitting device
US10074962B2 (en) 2014-05-01 2018-09-11 Ngk Insulators, Ltd. Grating element and external resonator type light emitting device
DE112015002094B4 (en) 2014-05-01 2019-08-22 Ngk Insulators, Ltd. Light-emitting device of the outer resonator type
US9979157B2 (en) 2014-06-13 2018-05-22 Ngk Insulators, Ltd. External-resonator-type light-emitting device
US10003175B2 (en) 2014-06-13 2018-06-19 Ngk Insulators, Ltd. External-resonator-type light-emitting device

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