JPS57159082A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS57159082A
JPS57159082A JP4477481A JP4477481A JPS57159082A JP S57159082 A JPS57159082 A JP S57159082A JP 4477481 A JP4477481 A JP 4477481A JP 4477481 A JP4477481 A JP 4477481A JP S57159082 A JPS57159082 A JP S57159082A
Authority
JP
Japan
Prior art keywords
layer
doped
type
laser element
type clad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4477481A
Other languages
Japanese (ja)
Other versions
JPS622715B2 (en
Inventor
Toshiro Hayakawa
Toshikimi Takagi
Naotaka Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4477481A priority Critical patent/JPS57159082A/en
Publication of JPS57159082A publication Critical patent/JPS57159082A/en
Publication of JPS622715B2 publication Critical patent/JPS622715B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To improve the life characteristic of the subject semiconductor laser element by a method wherein a P type clad layer or a photo guiding layer, an active layer, a buffer layer whereon no Se is doped, and an Se-doped N type clad layer are successively grown on a substrate. CONSTITUTION:A V-shape groove 27 is formed on the current control layer 22 which was grown on a P type GaAs substrate 21, and a Zn doped P type clad layer 23, a Ge-doped P type active layer 24, an Si-doped N type buffer layer 30, an Se-doped N type lad layer 25, and an Se-doped N type cap layer 26 are successively grown by lamination on the groove 27. As a result, the deterioration caused by the defect generating on the active layer and the Se-doped N type clad layer interface is suppressed, and the life of the subject laser element can be extended.
JP4477481A 1981-03-25 1981-03-25 Semiconductor laser element Granted JPS57159082A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4477481A JPS57159082A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4477481A JPS57159082A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Publications (2)

Publication Number Publication Date
JPS57159082A true JPS57159082A (en) 1982-10-01
JPS622715B2 JPS622715B2 (en) 1987-01-21

Family

ID=12700755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4477481A Granted JPS57159082A (en) 1981-03-25 1981-03-25 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS57159082A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208887A (en) * 1983-05-13 1984-11-27 Nec Corp Semiconductor light emitting element
JPS6175584A (en) * 1984-09-20 1986-04-17 Nec Corp Semiconductor laser
JPS61163689A (en) * 1985-01-14 1986-07-24 Sharp Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208887A (en) * 1983-05-13 1984-11-27 Nec Corp Semiconductor light emitting element
JPS6175584A (en) * 1984-09-20 1986-04-17 Nec Corp Semiconductor laser
JPS61163689A (en) * 1985-01-14 1986-07-24 Sharp Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS622715B2 (en) 1987-01-21

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