JPS57122591A - Buried hetero type semiconductor laser - Google Patents

Buried hetero type semiconductor laser

Info

Publication number
JPS57122591A
JPS57122591A JP793181A JP793181A JPS57122591A JP S57122591 A JPS57122591 A JP S57122591A JP 793181 A JP793181 A JP 793181A JP 793181 A JP793181 A JP 793181A JP S57122591 A JPS57122591 A JP S57122591A
Authority
JP
Japan
Prior art keywords
layer
diffused
buried
covered
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP793181A
Other languages
Japanese (ja)
Inventor
Noriyuki Shige
Uichiro Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Hitachi Iruma Electronic Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Tohbu Semiconductor Ltd
Hitachi Iruma Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Tohbu Semiconductor Ltd, Hitachi Iruma Electronic Co Ltd filed Critical Hitachi Ltd
Priority to JP793181A priority Critical patent/JPS57122591A/en
Publication of JPS57122591A publication Critical patent/JPS57122591A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Abstract

PURPOSE:To improve the temperature characteristics of a buried hetero type semiconductor laser by setting an interval between the active layer and the diffused layer of the laser to a value lower than the prescribed value, thereby reducing a leakage current and the temperature dependency of a threshold current. CONSTITUTION:A thin p type CaAlAs buried first layer 7 is formed on a substrate 1, and a thick n type GaAlAs buried second layer 8 is formed on the layer 7. The side from the intermediate part of the multilayer first layer 3 to the multilayer fourth layer 6 is covered with a layer 8, and the side from the intermediate part of the layer 3 to the layer 6 is covered with the layer 8. Then, an insulating layer 9 is formed on the upper surface of the layer 8, and an anode electrode 10 is formed on the upper surface of the layers 6 and 9. Further, a diffused layer 11 diffused with Zn for the purpose of improving the ohmic property of with the electrode 10 is formed on the surface layer of the layer 6 covered with the layer 9. Then, an interval (d) between the active layer 5 and the diffused layer 11 made of GaAs for guiding the laser light on the surface of the layer 4 is set to a value lower than 1.2mum thereby reducing the leakage current, reducing the temperature dependency of the threshold current, and improving the temperature characteristics.
JP793181A 1981-01-23 1981-01-23 Buried hetero type semiconductor laser Pending JPS57122591A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP793181A JPS57122591A (en) 1981-01-23 1981-01-23 Buried hetero type semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP793181A JPS57122591A (en) 1981-01-23 1981-01-23 Buried hetero type semiconductor laser

Publications (1)

Publication Number Publication Date
JPS57122591A true JPS57122591A (en) 1982-07-30

Family

ID=11679259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP793181A Pending JPS57122591A (en) 1981-01-23 1981-01-23 Buried hetero type semiconductor laser

Country Status (1)

Country Link
JP (1) JPS57122591A (en)

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