JPS5635486A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS5635486A JPS5635486A JP11085779A JP11085779A JPS5635486A JP S5635486 A JPS5635486 A JP S5635486A JP 11085779 A JP11085779 A JP 11085779A JP 11085779 A JP11085779 A JP 11085779A JP S5635486 A JPS5635486 A JP S5635486A
- Authority
- JP
- Japan
- Prior art keywords
- type
- electrode
- layer
- type gaas
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2238—Buried stripe structure with a terraced structure
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain a stable oscillation by forming a reverse conductivity type or semi-insulating layer on the stepwise top of the semiconductor substrate and effectively concentrating a current in an active layer in the vicinity of the step. CONSTITUTION:A P type GaAs 60 is formed on an N type GaAs substrate 2, and with an SiO2 mask is etched, and the step 13 is formed thereon. An N type Ga1-X AlX As 4, a P type GaAs active layer 5, a P type Ga1-XAlXAs 6, and a P type GaAs 7 are laminated thereon. An opening 62 is perforated at an SiO2 film 63, an electrode 64 is perforated thereat, and an electrode 65 is fitted therethrough on the substrate 2. According to this configuration, an electric current flows effectively concentrically from the electrode 64 through the rightside of the step of the P type layer 60 to the electrode 65 as designated by an imaginary line 66, and the layer 60 thus prevents branching of the current. In this manner stable oscillation can be obtained, the extension of the laser beam can be reduced, and the threshold current can be lowered. Further, the manufacturing work can be extremely performed satisfactorily.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11085779A JPS5635486A (en) | 1979-08-30 | 1979-08-30 | Semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11085779A JPS5635486A (en) | 1979-08-30 | 1979-08-30 | Semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5635486A true JPS5635486A (en) | 1981-04-08 |
Family
ID=14546421
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11085779A Pending JPS5635486A (en) | 1979-08-30 | 1979-08-30 | Semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5635486A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136986A (en) * | 1984-07-30 | 1986-02-21 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
-
1979
- 1979-08-30 JP JP11085779A patent/JPS5635486A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6136986A (en) * | 1984-07-30 | 1986-02-21 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device |
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