JPS5635486A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS5635486A
JPS5635486A JP11085779A JP11085779A JPS5635486A JP S5635486 A JPS5635486 A JP S5635486A JP 11085779 A JP11085779 A JP 11085779A JP 11085779 A JP11085779 A JP 11085779A JP S5635486 A JPS5635486 A JP S5635486A
Authority
JP
Japan
Prior art keywords
type
electrode
layer
type gaas
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11085779A
Other languages
Japanese (ja)
Inventor
Masaaki Ayabe
Kunio Kaneko
Ario Mita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11085779A priority Critical patent/JPS5635486A/en
Publication of JPS5635486A publication Critical patent/JPS5635486A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2238—Buried stripe structure with a terraced structure

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To obtain a stable oscillation by forming a reverse conductivity type or semi-insulating layer on the stepwise top of the semiconductor substrate and effectively concentrating a current in an active layer in the vicinity of the step. CONSTITUTION:A P type GaAs 60 is formed on an N type GaAs substrate 2, and with an SiO2 mask is etched, and the step 13 is formed thereon. An N type Ga1-X AlX As 4, a P type GaAs active layer 5, a P type Ga1-XAlXAs 6, and a P type GaAs 7 are laminated thereon. An opening 62 is perforated at an SiO2 film 63, an electrode 64 is perforated thereat, and an electrode 65 is fitted therethrough on the substrate 2. According to this configuration, an electric current flows effectively concentrically from the electrode 64 through the rightside of the step of the P type layer 60 to the electrode 65 as designated by an imaginary line 66, and the layer 60 thus prevents branching of the current. In this manner stable oscillation can be obtained, the extension of the laser beam can be reduced, and the threshold current can be lowered. Further, the manufacturing work can be extremely performed satisfactorily.
JP11085779A 1979-08-30 1979-08-30 Semiconductor laser Pending JPS5635486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11085779A JPS5635486A (en) 1979-08-30 1979-08-30 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11085779A JPS5635486A (en) 1979-08-30 1979-08-30 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS5635486A true JPS5635486A (en) 1981-04-08

Family

ID=14546421

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11085779A Pending JPS5635486A (en) 1979-08-30 1979-08-30 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS5635486A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136986A (en) * 1984-07-30 1986-02-21 Matsushita Electric Ind Co Ltd Semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6136986A (en) * 1984-07-30 1986-02-21 Matsushita Electric Ind Co Ltd Semiconductor light emitting device

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