JPS5580366A - Production of compound semiconductor element - Google Patents
Production of compound semiconductor elementInfo
- Publication number
- JPS5580366A JPS5580366A JP15304478A JP15304478A JPS5580366A JP S5580366 A JPS5580366 A JP S5580366A JP 15304478 A JP15304478 A JP 15304478A JP 15304478 A JP15304478 A JP 15304478A JP S5580366 A JPS5580366 A JP S5580366A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- electrode layer
- type gaas
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 229910001020 Au alloy Inorganic materials 0.000 abstract 1
- 229910017401 Au—Ge Inorganic materials 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
- 235000011149 sulphuric acid Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Abstract
PURPOSE:To avoid reduction of electrode contact area in a mesa etching by adopting a laminated structure of Au-Ge, Pt, Mo or W as the electrode layer on an n- type GaAs crystal. CONSTITUTION:An n-and p-type GaAs films 12, 13 are superposed to an n<+>-type GaAs substrate. An AuGe film 14, Pt film 100, Mo film 15 and an Au film 16 are superposed to the substrate 11 to form an electrode layer 10. Another electrode layer 20 is formed by forming a Ti film 17, Mo film 18 and a thick Au film 19 on the layer 13. Then, a mesa etching is effected with a solution of a compound ratio of H2SO4:H2O2:H2O=4:1:1, making use of the electrode layer 10 as a mask. By so doing, Pt is diffused in the AuGe to form an Au-Ge-Au alloy so that the potential difference between the etching solution and the GaAs crystal is extinguished to prevent further etching so that the etching at the side surface, which has been inevitable in the conventional technic, is completely eliminated to avoid the reduction of the contact area between the electrode 10 and the crystal 11.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15304478A JPS5580366A (en) | 1978-12-13 | 1978-12-13 | Production of compound semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15304478A JPS5580366A (en) | 1978-12-13 | 1978-12-13 | Production of compound semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5580366A true JPS5580366A (en) | 1980-06-17 |
Family
ID=15553736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15304478A Pending JPS5580366A (en) | 1978-12-13 | 1978-12-13 | Production of compound semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5580366A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55123183A (en) * | 1979-03-15 | 1980-09-22 | Nec Corp | Magnetic detector |
JPS60208882A (en) * | 1984-04-02 | 1985-10-21 | Asahi Chem Ind Co Ltd | Magnetoelectric conversion element |
JPS6120378A (en) * | 1984-07-09 | 1986-01-29 | Asahi Chem Ind Co Ltd | Magnetoelectric conversion element |
US4695869A (en) * | 1983-05-31 | 1987-09-22 | Kabushiki Kaisha Toshiba | GAAS semiconductor device |
US4853346A (en) * | 1987-12-31 | 1989-08-01 | International Business Machines Corporation | Ohmic contacts for semiconductor devices and method for forming ohmic contacts |
JPH05243636A (en) * | 1992-10-26 | 1993-09-21 | Asahi Chem Ind Co Ltd | Mangetoelectric transducer |
-
1978
- 1978-12-13 JP JP15304478A patent/JPS5580366A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55123183A (en) * | 1979-03-15 | 1980-09-22 | Nec Corp | Magnetic detector |
JPH0214793B2 (en) * | 1979-03-15 | 1990-04-10 | Nippon Electric Co | |
US4695869A (en) * | 1983-05-31 | 1987-09-22 | Kabushiki Kaisha Toshiba | GAAS semiconductor device |
JPS60208882A (en) * | 1984-04-02 | 1985-10-21 | Asahi Chem Ind Co Ltd | Magnetoelectric conversion element |
JPS6120378A (en) * | 1984-07-09 | 1986-01-29 | Asahi Chem Ind Co Ltd | Magnetoelectric conversion element |
US4853346A (en) * | 1987-12-31 | 1989-08-01 | International Business Machines Corporation | Ohmic contacts for semiconductor devices and method for forming ohmic contacts |
JPH05243636A (en) * | 1992-10-26 | 1993-09-21 | Asahi Chem Ind Co Ltd | Mangetoelectric transducer |
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