JPS55123183A - Magnetic detector - Google Patents

Magnetic detector

Info

Publication number
JPS55123183A
JPS55123183A JP3024779A JP3024779A JPS55123183A JP S55123183 A JPS55123183 A JP S55123183A JP 3024779 A JP3024779 A JP 3024779A JP 3024779 A JP3024779 A JP 3024779A JP S55123183 A JPS55123183 A JP S55123183A
Authority
JP
Japan
Prior art keywords
film
films
active unit
terminals
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3024779A
Other languages
Japanese (ja)
Other versions
JPH0214793B2 (en
Inventor
Sotaro Edokoro
Michio Murahata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3024779A priority Critical patent/JPS55123183A/en
Publication of JPS55123183A publication Critical patent/JPS55123183A/en
Publication of JPH0214793B2 publication Critical patent/JPH0214793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

PURPOSE:To avoid resistance value variation in the annealing of post-treatment by the method wherein the active unit of a detector and its terminal are formed on a semiconductor substrate by using thin magnetic film, and a conducting film is provided on this terminal through an intermediate metal film. CONSTITUTION:Permalloy film 3, consisting of about 81% of Ni and Fe for the remainder and thin intermediate metal film 4 of Mo or W are laminated and fixed on Si substrate 1 via SiO2 film 2. On top of this is formed Au film 5, which is to become a conducting film. Next, on film 5 is provided resist film 6 having a specified pattern. By operating ion milling, films 5 and 4 are removed. On film 2, active unit consisting of films 5, 4, 3 and two terminals lying on both sides only are retained. Subsequently, film 6 is removed, and this time, the terminals only are covered with resist film 8. By operating chemical etching, films 5 and 4 on active unit 7 are removed, and permalloy film 2 only is exposed. By removing film 8, terminals consisting of films 5, 4 and 3 are produced on both sides of active unit 7.
JP3024779A 1979-03-15 1979-03-15 Magnetic detector Granted JPS55123183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3024779A JPS55123183A (en) 1979-03-15 1979-03-15 Magnetic detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3024779A JPS55123183A (en) 1979-03-15 1979-03-15 Magnetic detector

Publications (2)

Publication Number Publication Date
JPS55123183A true JPS55123183A (en) 1980-09-22
JPH0214793B2 JPH0214793B2 (en) 1990-04-10

Family

ID=12298372

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3024779A Granted JPS55123183A (en) 1979-03-15 1979-03-15 Magnetic detector

Country Status (1)

Country Link
JP (1) JPS55123183A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764913A (en) * 1980-10-08 1982-04-20 Hitachi Ltd Manufacture of magnetic bubble memory elemebt
JPS57126187A (en) * 1981-01-28 1982-08-05 Hitachi Ltd Reluctance element
JPS57197885A (en) * 1981-05-29 1982-12-04 Hitachi Ltd Magnetoresistive element
FR2507823A1 (en) * 1981-06-10 1982-12-17 Hitachi Ltd METHOD FOR FORMING ELECTRODES FOR A DETECTOR WHOSE ELECTRICAL RESISTANCE VARIES WITH THE MAGNETIC FIELD TO WHICH IT IS SUBJECT
JPS58178576A (en) * 1982-04-14 1983-10-19 Nec Corp Manufacture of ferromagnetic magneto-resistance effect element
JPS5999370A (en) * 1982-11-30 1984-06-08 Copal Co Ltd Production of magnetic detector with magneto-resistance element
JPS59114413A (en) * 1982-12-21 1984-07-02 Copal Co Ltd Magnetic detector with magneto-resistance element
JPS62102574A (en) * 1985-10-29 1987-05-13 Victor Co Of Japan Ltd Magnetoresistance effect element
JPS62115790A (en) * 1986-09-29 1987-05-27 Hitachi Ltd Magnetoresistance effect element
JPS62115789A (en) * 1986-09-29 1987-05-27 Hitachi Ltd Magnetoresistance effect element
JPS6377370U (en) * 1986-11-07 1988-05-23
US4754431A (en) * 1987-01-28 1988-06-28 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
JPH01200683A (en) * 1988-02-04 1989-08-11 Sony Corp Magnetoresistance element and manufacture thereof
US4857418A (en) * 1986-12-08 1989-08-15 Honeywell Inc. Resistive overlayer for magnetic films
US4918655A (en) * 1988-02-29 1990-04-17 Honeywell Inc. Magnetic device integrated circuit interconnection system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580366A (en) * 1978-12-13 1980-06-17 Toshiba Corp Production of compound semiconductor element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5580366A (en) * 1978-12-13 1980-06-17 Toshiba Corp Production of compound semiconductor element

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764913A (en) * 1980-10-08 1982-04-20 Hitachi Ltd Manufacture of magnetic bubble memory elemebt
JPS57126187A (en) * 1981-01-28 1982-08-05 Hitachi Ltd Reluctance element
JPH0140511B2 (en) * 1981-01-28 1989-08-29 Hitachi Ltd
JPS57197885A (en) * 1981-05-29 1982-12-04 Hitachi Ltd Magnetoresistive element
FR2507823A1 (en) * 1981-06-10 1982-12-17 Hitachi Ltd METHOD FOR FORMING ELECTRODES FOR A DETECTOR WHOSE ELECTRICAL RESISTANCE VARIES WITH THE MAGNETIC FIELD TO WHICH IT IS SUBJECT
JPS58178576A (en) * 1982-04-14 1983-10-19 Nec Corp Manufacture of ferromagnetic magneto-resistance effect element
JPH0468797B2 (en) * 1982-04-14 1992-11-04 Nippon Electric Co
JPH0130408B2 (en) * 1982-11-30 1989-06-20 Copal Co Ltd
JPS5999370A (en) * 1982-11-30 1984-06-08 Copal Co Ltd Production of magnetic detector with magneto-resistance element
JPS59114413A (en) * 1982-12-21 1984-07-02 Copal Co Ltd Magnetic detector with magneto-resistance element
JPS62102574A (en) * 1985-10-29 1987-05-13 Victor Co Of Japan Ltd Magnetoresistance effect element
JPS62115790A (en) * 1986-09-29 1987-05-27 Hitachi Ltd Magnetoresistance effect element
JPS62115789A (en) * 1986-09-29 1987-05-27 Hitachi Ltd Magnetoresistance effect element
JPS6377370U (en) * 1986-11-07 1988-05-23
JPH0445263Y2 (en) * 1986-11-07 1992-10-23
US4857418A (en) * 1986-12-08 1989-08-15 Honeywell Inc. Resistive overlayer for magnetic films
US4754431A (en) * 1987-01-28 1988-06-28 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
JPH01200683A (en) * 1988-02-04 1989-08-11 Sony Corp Magnetoresistance element and manufacture thereof
US4918655A (en) * 1988-02-29 1990-04-17 Honeywell Inc. Magnetic device integrated circuit interconnection system

Also Published As

Publication number Publication date
JPH0214793B2 (en) 1990-04-10

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