JPS56125866A - Coil - Google Patents
CoilInfo
- Publication number
- JPS56125866A JPS56125866A JP2986580A JP2986580A JPS56125866A JP S56125866 A JPS56125866 A JP S56125866A JP 2986580 A JP2986580 A JP 2986580A JP 2986580 A JP2986580 A JP 2986580A JP S56125866 A JPS56125866 A JP S56125866A
- Authority
- JP
- Japan
- Prior art keywords
- film
- conductive layer
- metallic
- layer patterns
- coil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005294 ferromagnetic effect Effects 0.000 abstract 2
- 230000005291 magnetic effect Effects 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 229910000889 permalloy Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0066—Printed inductances with a magnetic layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain an inductance element, whose inductance value and a Q value are large, by forming a coil to an integrated circuit. CONSTITUTION:An N type epitaxial layer 2 and an insulating film 3 consisting of silicon oxide are made up on a P type silicon semiconductor substrate 1, and the first conductive layer patterns are built up by metallic film pieces 4 consisting of aluminum. The second conductive layer patterns 8 tilting to the first conductive layer patterns 4 and lead sections 9, 10 are formed by metallic film. A ferromagnetic film 7 being composed of permalloy is made up on an insulating film 5, and the film 7 is further coated with an insulating film 6. A flat shape of the ferromagnetic film 7 is rectangular, and the film 7 forms a closed magnetic path to magnetic flux generated. The end sections of the metallic film pieces 4, 8 are connected by metallic layers in opening sections vertically made up to the insulating films 5, 6, and a coil is built up. Thus, an inductance element is easily formed into an integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2986580A JPS56125866A (en) | 1980-03-10 | 1980-03-10 | Coil |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2986580A JPS56125866A (en) | 1980-03-10 | 1980-03-10 | Coil |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56125866A true JPS56125866A (en) | 1981-10-02 |
Family
ID=12287861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2986580A Pending JPS56125866A (en) | 1980-03-10 | 1980-03-10 | Coil |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56125866A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61102011U (en) * | 1984-12-11 | 1986-06-28 | ||
JPS61161747A (en) * | 1985-01-10 | 1986-07-22 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPH054516U (en) * | 1991-04-11 | 1993-01-22 | 三菱電機株式会社 | Inductor |
EP0778593A1 (en) * | 1995-12-07 | 1997-06-11 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for realizing magnetic circuits in an integrated circuit |
US5760456A (en) * | 1995-12-21 | 1998-06-02 | Grzegorek; Andrew Z. | Integrated circuit compatible planar inductors with increased Q |
JP2018524800A (en) * | 2015-06-25 | 2018-08-30 | インテル アイピー コーポレイション | WLCSP vertical inductor |
-
1980
- 1980-03-10 JP JP2986580A patent/JPS56125866A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61102011U (en) * | 1984-12-11 | 1986-06-28 | ||
JPS61161747A (en) * | 1985-01-10 | 1986-07-22 | Matsushita Electronics Corp | Semiconductor integrated circuit |
JPH054516U (en) * | 1991-04-11 | 1993-01-22 | 三菱電機株式会社 | Inductor |
EP0778593A1 (en) * | 1995-12-07 | 1997-06-11 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for realizing magnetic circuits in an integrated circuit |
US5936298A (en) * | 1995-12-07 | 1999-08-10 | Sgs-Thomson Microelectronics S.R.L. | Method for realizing magnetic circuits in an integrated circuit |
US5760456A (en) * | 1995-12-21 | 1998-06-02 | Grzegorek; Andrew Z. | Integrated circuit compatible planar inductors with increased Q |
JP2018524800A (en) * | 2015-06-25 | 2018-08-30 | インテル アイピー コーポレイション | WLCSP vertical inductor |
US10784033B2 (en) | 2015-06-25 | 2020-09-22 | Intel IP Corporation | Vertical inductor for WLCSP |
US11250981B2 (en) | 2015-06-25 | 2022-02-15 | Intel Corporation | Vertical inductor for WLCSP |
US11984246B2 (en) | 2015-06-25 | 2024-05-14 | Intel Corporation | Vertical inductor for WLCSP |
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