JPS5764913A - Manufacture of magnetic bubble memory elemebt - Google Patents

Manufacture of magnetic bubble memory elemebt

Info

Publication number
JPS5764913A
JPS5764913A JP13987080A JP13987080A JPS5764913A JP S5764913 A JPS5764913 A JP S5764913A JP 13987080 A JP13987080 A JP 13987080A JP 13987080 A JP13987080 A JP 13987080A JP S5764913 A JPS5764913 A JP S5764913A
Authority
JP
Japan
Prior art keywords
film
given
photoetching
bubble memory
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13987080A
Other languages
Japanese (ja)
Inventor
Hiroshi Umezaki
Norikazu Tsumita
Naoki Koyama
Yoji Maruyama
Ken Sugita
Yoshitsugu Koiso
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13987080A priority Critical patent/JPS5764913A/en
Publication of JPS5764913A publication Critical patent/JPS5764913A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To increase the process allowance in forming a magnetic bubble memory element, by a method wherein after a conductive film and a permalloy thin film are piled up on a substrate, a desired pattern is formed by a first photoetching, and an unnecessary conductive film is removed by a second photoetching. CONSTITUTION:An Al2O3 film 1, an NiFe film 2 of permalloy having a given composition, a Cr film 3, an Au film 4 and a Cr film 5 are successively deposited on a substrate having a magnetic garnet film by means of vacuum evaporation. Then, a resist film 6 having a given pattern is provided on the film 5, and a continuous etching is performed by means of ion milling using Ar ions until the film 2 is reached. Then, with these patterns used as masks, He ions of given density are injected to form a driving layer for transferring bubbles in the garnet film. Thereafter, with only the detector part exposed, a resist film 8 is formed, and ion milling is carried out again to remove the exposed portions of the films 5 and 4. Then, the film 3 above the film 2 is removed by means of etching, the whole surface is covered with a protecting film 9, and an opening for bonding is bored.
JP13987080A 1980-10-08 1980-10-08 Manufacture of magnetic bubble memory elemebt Pending JPS5764913A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13987080A JPS5764913A (en) 1980-10-08 1980-10-08 Manufacture of magnetic bubble memory elemebt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13987080A JPS5764913A (en) 1980-10-08 1980-10-08 Manufacture of magnetic bubble memory elemebt

Publications (1)

Publication Number Publication Date
JPS5764913A true JPS5764913A (en) 1982-04-20

Family

ID=15255470

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13987080A Pending JPS5764913A (en) 1980-10-08 1980-10-08 Manufacture of magnetic bubble memory elemebt

Country Status (1)

Country Link
JP (1) JPS5764913A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593919A (en) * 1995-09-05 1997-01-14 Motorola Inc. Process for forming a semiconductor device including conductive members
US5665642A (en) * 1993-04-30 1997-09-09 Sony Corporation Process of making a semiconductor device with a multilayer wiring and pillar formation

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54134938A (en) * 1978-04-12 1979-10-19 Nec Corp Manufacture of magnetic bubble detector
JPS55123183A (en) * 1979-03-15 1980-09-22 Nec Corp Magnetic detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54134938A (en) * 1978-04-12 1979-10-19 Nec Corp Manufacture of magnetic bubble detector
JPS55123183A (en) * 1979-03-15 1980-09-22 Nec Corp Magnetic detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665642A (en) * 1993-04-30 1997-09-09 Sony Corporation Process of making a semiconductor device with a multilayer wiring and pillar formation
US5593919A (en) * 1995-09-05 1997-01-14 Motorola Inc. Process for forming a semiconductor device including conductive members

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