JPS57138563A - Method of grinding thin film pattern - Google Patents
Method of grinding thin film patternInfo
- Publication number
- JPS57138563A JPS57138563A JP56022001A JP2200181A JPS57138563A JP S57138563 A JPS57138563 A JP S57138563A JP 56022001 A JP56022001 A JP 56022001A JP 2200181 A JP2200181 A JP 2200181A JP S57138563 A JPS57138563 A JP S57138563A
- Authority
- JP
- Japan
- Prior art keywords
- lapping
- holes
- stop
- thin film
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Magnetic Heads (AREA)
Abstract
PURPOSE:To grind with high dimensional accuracy of thickness of a thin film by grinding with the lapping face adjusted according to the holes in a stop marker provided on the pattern for lapping stop when lapping magnetic thin films such as thin film magnetic heads. CONSTITUTION:A metal mask 4 is provided with 4 holes 5 for lapping stop that are corresponding to the pattern 2' for lapping stop. Next, after the metal mask 4 is placed over a substrae 1 that is provided with patterns 2 and 2', so that the mask holes 5 coincide with the one end on the pattern 2', ion milling is conducted from over the mask 4 to form the first hole 6 with specified film thickness. After this an alumina film 3 is formed on the substrate 1 that is provided with holes 6, 7 and 8 with specified depths that become shallower successively. Next, a film 3 is flat-ground parallel to the substrate 1 until the first hole 6 emerges that has a bottom face of the same height as the face at which the grinding is expected to end, thus finish-working to a specified thickness.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56022001A JPS57138563A (en) | 1981-02-17 | 1981-02-17 | Method of grinding thin film pattern |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56022001A JPS57138563A (en) | 1981-02-17 | 1981-02-17 | Method of grinding thin film pattern |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57138563A true JPS57138563A (en) | 1982-08-26 |
Family
ID=12070764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56022001A Pending JPS57138563A (en) | 1981-02-17 | 1981-02-17 | Method of grinding thin film pattern |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57138563A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145602A (en) * | 1984-01-09 | 1985-08-01 | Sumitomo Special Metals Co Ltd | Composite substrate |
US6893326B2 (en) * | 2000-09-04 | 2005-05-17 | Cambridge Consultants Limited | Coating removal |
-
1981
- 1981-02-17 JP JP56022001A patent/JPS57138563A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60145602A (en) * | 1984-01-09 | 1985-08-01 | Sumitomo Special Metals Co Ltd | Composite substrate |
US6893326B2 (en) * | 2000-09-04 | 2005-05-17 | Cambridge Consultants Limited | Coating removal |
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