JPS57109340A - Formation of electrode for semiconductor device - Google Patents

Formation of electrode for semiconductor device

Info

Publication number
JPS57109340A
JPS57109340A JP18588680A JP18588680A JPS57109340A JP S57109340 A JPS57109340 A JP S57109340A JP 18588680 A JP18588680 A JP 18588680A JP 18588680 A JP18588680 A JP 18588680A JP S57109340 A JPS57109340 A JP S57109340A
Authority
JP
Japan
Prior art keywords
metal film
electrode
etching
coated
exposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18588680A
Other languages
Japanese (ja)
Inventor
Hideaki Izumi
Kazuhiro Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP18588680A priority Critical patent/JPS57109340A/en
Publication of JPS57109340A publication Critical patent/JPS57109340A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To enable to form the electrode of microscopic measurements having an excellent adhesive strength by a method wherein the first and the second metal films are selectively removed in such a manner that the second metal film will be making an overhunging structure to the first metal film, and a part of the substrate is exposed. CONSTITUTION:The Al 4, a part of which was exposed using an etching solution with Nb 5 used as a mask, is removed by performing an etching in such a manner that the Al 4 becomes larger than the pattern width of the Nb 5, and the above is formed into an overhanging structure. Then Ta 8, having almost the same shape as the desired pattern, is coated on the GaAs substrate through a mask hole 7 using a vacuum evaporating method. Then, Al 4 is removed by performing an etching, and the metal film alone of the coated Ta 8 is remained on the GaAs substrate 1.
JP18588680A 1980-12-26 1980-12-26 Formation of electrode for semiconductor device Pending JPS57109340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18588680A JPS57109340A (en) 1980-12-26 1980-12-26 Formation of electrode for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18588680A JPS57109340A (en) 1980-12-26 1980-12-26 Formation of electrode for semiconductor device

Publications (1)

Publication Number Publication Date
JPS57109340A true JPS57109340A (en) 1982-07-07

Family

ID=16178593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18588680A Pending JPS57109340A (en) 1980-12-26 1980-12-26 Formation of electrode for semiconductor device

Country Status (1)

Country Link
JP (1) JPS57109340A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292472A (en) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd Manufacture of thin film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292472A (en) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd Manufacture of thin film transistor

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