JPS56160740A - Manufacture of thin-film field type cold cathode - Google Patents

Manufacture of thin-film field type cold cathode

Info

Publication number
JPS56160740A
JPS56160740A JP6237180A JP6237180A JPS56160740A JP S56160740 A JPS56160740 A JP S56160740A JP 6237180 A JP6237180 A JP 6237180A JP 6237180 A JP6237180 A JP 6237180A JP S56160740 A JPS56160740 A JP S56160740A
Authority
JP
Japan
Prior art keywords
hole
layer
coated
cathode
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6237180A
Other languages
Japanese (ja)
Inventor
Katsuhiko Akiyama
Akira Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6237180A priority Critical patent/JPS56160740A/en
Publication of JPS56160740A publication Critical patent/JPS56160740A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Abstract

PURPOSE:To achieve a sharp and uniform electrode by providing a recess in a crystal substrate through crystallization characteristic while employing the corresponding conical projection as one electrode layer then surrounding it through an insulation layer with facing electrode layer. CONSTITUTION:A photoresist film 12 is coated on one main face of crystsl substrate 11 such as Si crystal then a through-hole is made and a recess 13 is formed through said hole by the crystallization etching. After removing the resist film 12 a cathode electrode layer 14 is coated and an insulative reinforcing layer 15 is coated on it. The conical top 14a is exposed from below the substrate 11 through etching, then an insulation layer 16 and an electrode layer 17 are coated. Thereafter the insulation layer 16 is etched through a through-hole 17a in the conical top 14a to make a through-hole 16a below the through-hole 17a. The conical top 14a is exposed through said through-holes to form the cathode layer which is employed together with an anode electrode layer 17 through the insulation layer 16 to constitute the entire cathode. Consequently a sharp and uniform conical cathode can be produced easily and reliably.
JP6237180A 1980-05-12 1980-05-12 Manufacture of thin-film field type cold cathode Pending JPS56160740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6237180A JPS56160740A (en) 1980-05-12 1980-05-12 Manufacture of thin-film field type cold cathode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6237180A JPS56160740A (en) 1980-05-12 1980-05-12 Manufacture of thin-film field type cold cathode

Publications (1)

Publication Number Publication Date
JPS56160740A true JPS56160740A (en) 1981-12-10

Family

ID=13198186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6237180A Pending JPS56160740A (en) 1980-05-12 1980-05-12 Manufacture of thin-film field type cold cathode

Country Status (1)

Country Link
JP (1) JPS56160740A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0150885A2 (en) * 1984-02-01 1985-08-07 Koninklijke Philips Electronics N.V. Semiconductor device for producing an electron beam
JPS6310428A (en) * 1986-07-01 1988-01-18 Canon Inc Cold cathode device
FR2657461A1 (en) * 1990-01-25 1991-07-26 Mitsubishi Electric Corp METHOD FOR MANUFACTURING A MICRO-MINIATURE ELECTRON-EMITTING DEVICE.
FR2664094A1 (en) * 1990-06-27 1992-01-03 Mitsubishi Electric Corp Microminiature vacuum tube on a semiconductor substrate and method of manufacture
US5136764A (en) * 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
US5141459A (en) * 1990-07-18 1992-08-25 International Business Machines Corporation Structures and processes for fabricating field emission cathodes
US5228877A (en) * 1991-01-25 1993-07-20 Gec-Marconi Limited Field emission devices
US5229331A (en) * 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
WO1994014182A1 (en) * 1992-12-04 1994-06-23 Pixel International S.A. Method for producing microdot emitting cathodes on silicon for compact flat screens, and resulting products
US5334908A (en) * 1990-07-18 1994-08-02 International Business Machines Corporation Structures and processes for fabricating field emission cathode tips using secondary cusp
US5499938A (en) * 1992-07-14 1996-03-19 Kabushiki Kaisha Toshiba Field emission cathode structure, method for production thereof, and flat panel display device using same
JP2677452B2 (en) * 1990-12-14 1997-11-17 ジョージア・テック・リサーチ・コーポレーション Non-invasive blood glucose measurement system
US5696028A (en) * 1992-02-14 1997-12-09 Micron Technology, Inc. Method to form an insulative barrier useful in field emission displays for reducing surface leakage
US5749762A (en) * 1993-03-15 1998-05-12 Kabushiki Kaisha Toshiba Field emission cold cathode and method for production thereof
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0150885A2 (en) * 1984-02-01 1985-08-07 Koninklijke Philips Electronics N.V. Semiconductor device for producing an electron beam
JPS6310428A (en) * 1986-07-01 1988-01-18 Canon Inc Cold cathode device
FR2657461A1 (en) * 1990-01-25 1991-07-26 Mitsubishi Electric Corp METHOD FOR MANUFACTURING A MICRO-MINIATURE ELECTRON-EMITTING DEVICE.
US5221221A (en) * 1990-01-25 1993-06-22 Mitsubishi Denki Kabushiki Kaisha Fabrication process for microminiature electron emitting device
US5270258A (en) * 1990-06-27 1993-12-14 Mitsubishi Denki Kabushiki Kaisha Microminiature vacuum tube manufacturing method
FR2664094A1 (en) * 1990-06-27 1992-01-03 Mitsubishi Electric Corp Microminiature vacuum tube on a semiconductor substrate and method of manufacture
US5367181A (en) * 1990-06-27 1994-11-22 Mitsubishi Denki Kabushiki Kaisha Microminiature vacuum tube
US5334908A (en) * 1990-07-18 1994-08-02 International Business Machines Corporation Structures and processes for fabricating field emission cathode tips using secondary cusp
US5141459A (en) * 1990-07-18 1992-08-25 International Business Machines Corporation Structures and processes for fabricating field emission cathodes
US5136764A (en) * 1990-09-27 1992-08-11 Motorola, Inc. Method for forming a field emission device
JP2677452B2 (en) * 1990-12-14 1997-11-17 ジョージア・テック・リサーチ・コーポレーション Non-invasive blood glucose measurement system
US5228877A (en) * 1991-01-25 1993-07-20 Gec-Marconi Limited Field emission devices
US5831378A (en) * 1992-02-14 1998-11-03 Micron Technology, Inc. Insulative barrier useful in field emission displays for reducing surface leakage
US5372973A (en) * 1992-02-14 1994-12-13 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
US5696028A (en) * 1992-02-14 1997-12-09 Micron Technology, Inc. Method to form an insulative barrier useful in field emission displays for reducing surface leakage
US5229331A (en) * 1992-02-14 1993-07-20 Micron Technology, Inc. Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology
US6066507A (en) * 1992-02-14 2000-05-23 Micron Technology, Inc. Method to form an insulative barrier useful in field emission displays for reducing surface leakage
US5499938A (en) * 1992-07-14 1996-03-19 Kabushiki Kaisha Toshiba Field emission cathode structure, method for production thereof, and flat panel display device using same
US6281621B1 (en) 1992-07-14 2001-08-28 Kabushiki Kaisha Toshiba Field emission cathode structure, method for production thereof, and flat panel display device using same
FR2700217A1 (en) * 1992-12-04 1994-07-08 Pixel Int Sa Process for producing on silicon microtip emitting cathodes for flat screens of small dimensions, and products obtained.
US5521461A (en) * 1992-12-04 1996-05-28 Pixel International Method for producing microdot-emitting cathodes on silicon for compact flat screens and resulting products
WO1994014182A1 (en) * 1992-12-04 1994-06-23 Pixel International S.A. Method for producing microdot emitting cathodes on silicon for compact flat screens, and resulting products
US5749762A (en) * 1993-03-15 1998-05-12 Kabushiki Kaisha Toshiba Field emission cold cathode and method for production thereof
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same
US6181060B1 (en) 1996-11-06 2001-01-30 Micron Technology, Inc. Field emission display with plural dielectric layers

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