JPS5637649A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5637649A JPS5637649A JP11340079A JP11340079A JPS5637649A JP S5637649 A JPS5637649 A JP S5637649A JP 11340079 A JP11340079 A JP 11340079A JP 11340079 A JP11340079 A JP 11340079A JP S5637649 A JPS5637649 A JP S5637649A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- etched
- al2o3
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain the Al wirings with uniform pattern width on an insulative film by method wherein Al2O3 on the surface of an Al film laid upon the insulative film is selectively etched by using reducing gas plasma and then the Al film is etched by using gas plasma of compounds containing Cl2. CONSTITUTION:When an Al film 5 is evaporated on an insulative film 3 having an opening above an active layer in a semiconductor substrate, an Al2O3 film 6 is formed thereon naturally. After applying a mask 7, the Al2O3 film 6 is etched in plasma of CO gas. Then, the Al film 5 is etched in plasma of CCl4 and the mask 7 is removed by using plasma of O2 gas. According to this method, the Al film can be etched with no influence from its thickness when etching Al2O3 by CC4. Thus, the etching time by plasma becomes more uniform and the variation in pattern width of the Al wirings formed on the insulative film is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11340079A JPS5637649A (en) | 1979-09-03 | 1979-09-03 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11340079A JPS5637649A (en) | 1979-09-03 | 1979-09-03 | Manufacturing of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5637649A true JPS5637649A (en) | 1981-04-11 |
Family
ID=14611329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11340079A Pending JPS5637649A (en) | 1979-09-03 | 1979-09-03 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637649A (en) |
-
1979
- 1979-09-03 JP JP11340079A patent/JPS5637649A/en active Pending
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