JPS5792829A - Forming method for electrode - Google Patents

Forming method for electrode

Info

Publication number
JPS5792829A
JPS5792829A JP55168049A JP16804980A JPS5792829A JP S5792829 A JPS5792829 A JP S5792829A JP 55168049 A JP55168049 A JP 55168049A JP 16804980 A JP16804980 A JP 16804980A JP S5792829 A JPS5792829 A JP S5792829A
Authority
JP
Japan
Prior art keywords
film
aqueous solution
alloy film
alloy
koh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55168049A
Other languages
Japanese (ja)
Inventor
Mitsuhiro Mori
Hitoshi Nakamura
Yuichi Ono
Kazuhiro Ito
Masahiko Kawada
Kazuhiro Kurata
Hirobumi Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55168049A priority Critical patent/JPS5792829A/en
Publication of JPS5792829A publication Critical patent/JPS5792829A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To form the ohmic electrode with a desired shape without immersing a crystal substrate by using a double layer of an Al alloy and Al as an electrode material and employing an aqueous solution of NaOH or KOH as an etching liquid. CONSTITUTION:A desired section of the surface of a compound semiconductor, a principal ingredient thereof is Sb, is coated with an Al alloy film. An Al film is laminated on the Al alloy film, and coated. The Al alloy film and the Al film are processed in desired shapes by using the NaOH aqueous solution or the KOH aqueous solution. The technique of normal photo-lighegraphy is employed in order to process the Al alloy film and the Al film in the desired shapes, the aqueous solution of NaOH or KOH is preferable as the etching liquid at that time, and the Al alloy film and the Al film are etched without damaging the crystal substrate and wiring with the desired shape can be formed.
JP55168049A 1980-12-01 1980-12-01 Forming method for electrode Pending JPS5792829A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55168049A JPS5792829A (en) 1980-12-01 1980-12-01 Forming method for electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168049A JPS5792829A (en) 1980-12-01 1980-12-01 Forming method for electrode

Publications (1)

Publication Number Publication Date
JPS5792829A true JPS5792829A (en) 1982-06-09

Family

ID=15860874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168049A Pending JPS5792829A (en) 1980-12-01 1980-12-01 Forming method for electrode

Country Status (1)

Country Link
JP (1) JPS5792829A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0485930A (en) * 1990-07-30 1992-03-18 Fujitsu Ltd Wiring pattern formation method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0485930A (en) * 1990-07-30 1992-03-18 Fujitsu Ltd Wiring pattern formation method

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