JPS5667933A - Scribe method of semiconductor wafer - Google Patents

Scribe method of semiconductor wafer

Info

Publication number
JPS5667933A
JPS5667933A JP14356279A JP14356279A JPS5667933A JP S5667933 A JPS5667933 A JP S5667933A JP 14356279 A JP14356279 A JP 14356279A JP 14356279 A JP14356279 A JP 14356279A JP S5667933 A JPS5667933 A JP S5667933A
Authority
JP
Japan
Prior art keywords
scribe
photoresist film
aluminum
wafer
protected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14356279A
Other languages
Japanese (ja)
Inventor
Nobuyuki Yamamichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14356279A priority Critical patent/JPS5667933A/en
Publication of JPS5667933A publication Critical patent/JPS5667933A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Abstract

PURPOSE:To easily eliminate a turn up of an aluminum metallic film by a method wherein after the surface of a wafer is protected with a photoresist film, a scribe is performed with a dicer and then, etching is performed. CONSTITUTION:A scribe area composed of an aluminum film 2 is formed on the surface of a wafer 1. And the surface of the scribe area is protected with a photoresist film 3. Next thereto, a wafer 1 is cut by a blade 4 of a dicer to form a scribe groove 5. A turn up 6 of aluminum produced at this time, is removed by an etching liquid through an etching processing. In this way, since the aluminum wiring part is protected by the photoresist film 3, no damage is received and only the turn up 6 can be removed. And thereafter, a photoresist film is removed.
JP14356279A 1979-11-06 1979-11-06 Scribe method of semiconductor wafer Pending JPS5667933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14356279A JPS5667933A (en) 1979-11-06 1979-11-06 Scribe method of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14356279A JPS5667933A (en) 1979-11-06 1979-11-06 Scribe method of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS5667933A true JPS5667933A (en) 1981-06-08

Family

ID=15341621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14356279A Pending JPS5667933A (en) 1979-11-06 1979-11-06 Scribe method of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS5667933A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003048209A (en) * 2001-08-06 2003-02-18 Tokuyama Corp Manufacturing method for ceramic chips
US7851241B2 (en) * 2002-04-01 2010-12-14 Mitsuboshi Diamond Industrial Co., Ltd. Method for severing brittle material substrate and severing apparatus using the method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003048209A (en) * 2001-08-06 2003-02-18 Tokuyama Corp Manufacturing method for ceramic chips
US7851241B2 (en) * 2002-04-01 2010-12-14 Mitsuboshi Diamond Industrial Co., Ltd. Method for severing brittle material substrate and severing apparatus using the method

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