JPS5678125A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5678125A JPS5678125A JP15437379A JP15437379A JPS5678125A JP S5678125 A JPS5678125 A JP S5678125A JP 15437379 A JP15437379 A JP 15437379A JP 15437379 A JP15437379 A JP 15437379A JP S5678125 A JPS5678125 A JP S5678125A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- moat
- film
- constitution
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 239000000126 substance Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 239000009719 polyimide resin Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
Abstract
PURPOSE:To prevent the short-circuit due to a metal foreign substance or the like when the moat protective film is cut at its shoulder section and to improve the yield rate for the subject device by a method wherein an SiO2 film is formed on the surface of the circumferential boundary section of the moat. CONSTITUTION:An SiO2 12 is formed on an Si substrate 11 and polyimide resin 13 is applied. Then a selective etching is performed on the resin film 13 only. Subsequently, in the state of condition wherein the SiO2 12 is remained on the surface of a boundary section 14, the substrate 11 is cut by a rotary blade. In this constitution, the resin film 9 is thinned and a cutting is made at the shoulder section 9 of the moat and no short-circuit is generated when a metal foreign substance is adhered because an SiO2 film 5 is left. As a result, the yield rate of the device can be improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15437379A JPS5678125A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15437379A JPS5678125A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5678125A true JPS5678125A (en) | 1981-06-26 |
Family
ID=15582732
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15437379A Pending JPS5678125A (en) | 1979-11-30 | 1979-11-30 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5678125A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6286826A (en) * | 1985-10-14 | 1987-04-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5230167A (en) * | 1975-09-03 | 1977-03-07 | Hitachi Ltd | Method for production of semiconductor device |
-
1979
- 1979-11-30 JP JP15437379A patent/JPS5678125A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5230167A (en) * | 1975-09-03 | 1977-03-07 | Hitachi Ltd | Method for production of semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6286826A (en) * | 1985-10-14 | 1987-04-21 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
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