JPS5421269A - Manufacture for semiconductor mask - Google Patents

Manufacture for semiconductor mask

Info

Publication number
JPS5421269A
JPS5421269A JP8681577A JP8681577A JPS5421269A JP S5421269 A JPS5421269 A JP S5421269A JP 8681577 A JP8681577 A JP 8681577A JP 8681577 A JP8681577 A JP 8681577A JP S5421269 A JPS5421269 A JP S5421269A
Authority
JP
Japan
Prior art keywords
etching
manufacture
semiconductor mask
junction
caoted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8681577A
Other languages
Japanese (ja)
Inventor
Kenichi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8681577A priority Critical patent/JPS5421269A/en
Publication of JPS5421269A publication Critical patent/JPS5421269A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To increase the junction reverse dielectirc strength and to avoid open wire for caoted wiring, by using oxided etching films different in etching speed in combination, obtaining the most suitable angle toward film thickness wise with CF gas plasma etching, and by taking greater curvature at the PN junction edge formed by using this.
COPYRIGHT: (C)1979,JPO&Japio
JP8681577A 1977-07-19 1977-07-19 Manufacture for semiconductor mask Pending JPS5421269A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8681577A JPS5421269A (en) 1977-07-19 1977-07-19 Manufacture for semiconductor mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8681577A JPS5421269A (en) 1977-07-19 1977-07-19 Manufacture for semiconductor mask

Publications (1)

Publication Number Publication Date
JPS5421269A true JPS5421269A (en) 1979-02-17

Family

ID=13897293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8681577A Pending JPS5421269A (en) 1977-07-19 1977-07-19 Manufacture for semiconductor mask

Country Status (1)

Country Link
JP (1) JPS5421269A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172737A (en) * 1981-04-17 1982-10-23 Oki Electric Ind Co Ltd Forming method of throughhole
JPS59104131A (en) * 1982-11-18 1984-06-15 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing semiconductor device
JPS62156835A (en) * 1985-12-28 1987-07-11 Nec Corp Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098786A (en) * 1973-12-27 1975-08-06
JPS529353A (en) * 1975-07-11 1977-01-24 Matsushita Electric Ind Co Ltd Solid-state oscillator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098786A (en) * 1973-12-27 1975-08-06
JPS529353A (en) * 1975-07-11 1977-01-24 Matsushita Electric Ind Co Ltd Solid-state oscillator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172737A (en) * 1981-04-17 1982-10-23 Oki Electric Ind Co Ltd Forming method of throughhole
JPS59104131A (en) * 1982-11-18 1984-06-15 テキサス・インスツルメンツ・インコ−ポレイテツド Method of producing semiconductor device
JPS62156835A (en) * 1985-12-28 1987-07-11 Nec Corp Manufacture of semiconductor device

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