JPS5511306A - Structure of semiconductor device - Google Patents

Structure of semiconductor device

Info

Publication number
JPS5511306A
JPS5511306A JP8291378A JP8291378A JPS5511306A JP S5511306 A JPS5511306 A JP S5511306A JP 8291378 A JP8291378 A JP 8291378A JP 8291378 A JP8291378 A JP 8291378A JP S5511306 A JPS5511306 A JP S5511306A
Authority
JP
Japan
Prior art keywords
attachment
electrode
projected part
area
neighborhood
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8291378A
Other languages
Japanese (ja)
Inventor
Hiroyuki Miyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP8291378A priority Critical patent/JPS5511306A/en
Publication of JPS5511306A publication Critical patent/JPS5511306A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent any effect on a protective film and others in the neighborhood of an electrode, by making the area of attachment between a metal projected part and an electrode less than half the maximum area of the cross section produced when the projected part is cut by a plane parallel to this surface of attachment other than the surface of attachment.
CONSTITUTION: Metal projected part 11 is formed on electrode 3 of Al film, and the area of the surface of attachment 4 between projected part 11 and electrode 3 is made less than half the maximum area of the cross section produced when projected part 11 is cut by a plane parallel to surface of attachment 4 other than the surface of attachment. By this, it is possible to prevent any effect on protective film 5 and others in the neighborhood of electrode 3.
COPYRIGHT: (C)1980,JPO&Japio
JP8291378A 1978-07-10 1978-07-10 Structure of semiconductor device Pending JPS5511306A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8291378A JPS5511306A (en) 1978-07-10 1978-07-10 Structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8291378A JPS5511306A (en) 1978-07-10 1978-07-10 Structure of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5511306A true JPS5511306A (en) 1980-01-26

Family

ID=13787483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8291378A Pending JPS5511306A (en) 1978-07-10 1978-07-10 Structure of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5511306A (en)

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