JPS5575281A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor deviceInfo
- Publication number
- JPS5575281A JPS5575281A JP14883878A JP14883878A JPS5575281A JP S5575281 A JPS5575281 A JP S5575281A JP 14883878 A JP14883878 A JP 14883878A JP 14883878 A JP14883878 A JP 14883878A JP S5575281 A JPS5575281 A JP S5575281A
- Authority
- JP
- Japan
- Prior art keywords
- cleavage
- layer
- layers
- type
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
- Dicing (AREA)
Abstract
PURPOSE: To prevent a wafer from cracks taking place when cleavage is applied by providing thick electrode layers like bands on an electrode layer of a wafer;
CONSTITUTION: An n-type GaAs layer 3, an n-type GaAlAs layer 4, a p-type GaAlAs layer 5, light emitting sections 6, a p-type GaAlAs layer 7, n-type GaAs layers 8, p-type diffused layers 9 and gold electrode layers 1, 10 are produced, Cleavage is then caused along band-like gold electrode layers 13 as shown by a one- dot chain line A. Even if bending stress is applied due to the cleavage, the stress is prevented from concentrating. Because the electrode layers 13 has a high strength against the stress, no amorphous crack takes place. A protective film is provided on the side lateral surface of a wafer after the cleavage so that the thin electrode layer 1 is removed by ions and the thick electrode layer 13 is made thin. Therefore, other cleavage can be easily caused in a direction perpendicular to the longitudinal direction of the electrode layer 13 as shown by a two-dot chain line B after the protective film is provided.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14883878A JPS5575281A (en) | 1978-12-01 | 1978-12-01 | Manufacturing method of semiconductor device |
EP79301493A EP0007805B1 (en) | 1978-07-29 | 1979-07-26 | A method of coating side walls of semiconductor devices |
DE7979301493T DE2964810D1 (en) | 1978-07-29 | 1979-07-26 | A method of coating side walls of semiconductor devices |
US06/223,152 US4356210A (en) | 1978-07-29 | 1981-01-07 | Method for forming a protecting film on side walls of a semiconductor device |
US06/389,916 US4435443A (en) | 1978-07-29 | 1982-06-18 | Method for forming a protecting film on side walls of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14883878A JPS5575281A (en) | 1978-12-01 | 1978-12-01 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5575281A true JPS5575281A (en) | 1980-06-06 |
JPS5635316B2 JPS5635316B2 (en) | 1981-08-15 |
Family
ID=15461856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14883878A Granted JPS5575281A (en) | 1978-07-29 | 1978-12-01 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5575281A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131583A (en) * | 1984-11-30 | 1986-06-19 | Sony Corp | Manufacture of semiconductor laser |
WO2008099838A1 (en) * | 2007-02-14 | 2008-08-21 | Showa Denko K.K. | Method for manufacturing compound semiconductor element, and compound semiconductor element |
WO2015063655A1 (en) * | 2013-10-29 | 2015-05-07 | Koninklijke Philips N.V. | Separating a wafer of light emitting devices |
-
1978
- 1978-12-01 JP JP14883878A patent/JPS5575281A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131583A (en) * | 1984-11-30 | 1986-06-19 | Sony Corp | Manufacture of semiconductor laser |
WO2008099838A1 (en) * | 2007-02-14 | 2008-08-21 | Showa Denko K.K. | Method for manufacturing compound semiconductor element, and compound semiconductor element |
US8062960B2 (en) | 2007-02-14 | 2011-11-22 | Showa Denko K.K. | Compound semiconductor device and method of manufacturing compound semiconductor device |
WO2015063655A1 (en) * | 2013-10-29 | 2015-05-07 | Koninklijke Philips N.V. | Separating a wafer of light emitting devices |
US9773941B2 (en) | 2013-10-29 | 2017-09-26 | Koninklijke Philips N.V. | Separating a wafer of light emitting devices |
TWI642202B (en) * | 2013-10-29 | 2018-11-21 | 皇家飛利浦有限公司 | Separating a wafer of light emitting devices |
Also Published As
Publication number | Publication date |
---|---|
JPS5635316B2 (en) | 1981-08-15 |
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