JPS644047A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS644047A
JPS644047A JP15904487A JP15904487A JPS644047A JP S644047 A JPS644047 A JP S644047A JP 15904487 A JP15904487 A JP 15904487A JP 15904487 A JP15904487 A JP 15904487A JP S644047 A JPS644047 A JP S644047A
Authority
JP
Japan
Prior art keywords
gold
wiring part
layer
film
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15904487A
Other languages
Japanese (ja)
Inventor
Naotaka Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15904487A priority Critical patent/JPS644047A/en
Publication of JPS644047A publication Critical patent/JPS644047A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enhance the reliability by a method wherein a conductive layer which is composed of titanium, aluminum or the like and which can enhance the close contact performance between a gold wiring part and a protective film is laid between the gold wiring part and the protective film so that the occurrence of a crack in the protective film or the deterioration of the gold wiring part in a posterior process can be prevented. CONSTITUTION:After an SiO2 film 12 has been formed on a semiconductor substrate 11, a gold layer 13 and a titanium layer 19 are applied to the SiO2 film 12 in succession and are formed. The gold layer 13 and the titanium layer 19 are patterned by using an identical mask; a laminated wiring part 20 of the gold layer 13 and the titanium layer 19 is formed; after that, a plasma SiNx film 14 is formed on the whole surface. Because the close contact performance of titanium with a plasma SiNx as a protective film and with gold as a wiring part is good, it is possible to prevent a crack from being produced in the protective film with the passage of time. Because the titanium layer 19 is laid, the close contact performance between the gold wiring part 13 and the plasma SiNx film 14 is enhanced, an etching solution does not penetrate into an interface between the gold wiring part 13 and the plasma SiNx film 14 in a posterior process.
JP15904487A 1987-06-26 1987-06-26 Semiconductor device Pending JPS644047A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15904487A JPS644047A (en) 1987-06-26 1987-06-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15904487A JPS644047A (en) 1987-06-26 1987-06-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS644047A true JPS644047A (en) 1989-01-09

Family

ID=15685003

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15904487A Pending JPS644047A (en) 1987-06-26 1987-06-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS644047A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438781A (en) * 1977-08-31 1979-03-23 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor and method of producing same
JPS62272557A (en) * 1986-03-29 1987-11-26 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device
JPS63161646A (en) * 1986-12-25 1988-07-05 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438781A (en) * 1977-08-31 1979-03-23 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor and method of producing same
JPS62272557A (en) * 1986-03-29 1987-11-26 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ Manufacture of semiconductor device
JPS63161646A (en) * 1986-12-25 1988-07-05 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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