JPS57207353A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS57207353A
JPS57207353A JP9358481A JP9358481A JPS57207353A JP S57207353 A JPS57207353 A JP S57207353A JP 9358481 A JP9358481 A JP 9358481A JP 9358481 A JP9358481 A JP 9358481A JP S57207353 A JPS57207353 A JP S57207353A
Authority
JP
Japan
Prior art keywords
protecting film
surface protecting
thickness
metallic
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9358481A
Other languages
Japanese (ja)
Inventor
Masaharu Noyori
Shuji Kondo
Tsuyoshi Shiragasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9358481A priority Critical patent/JPS57207353A/en
Publication of JPS57207353A publication Critical patent/JPS57207353A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the crack generation on a surface protecting film, by providing notches on a part of a metallic wiring. CONSTITUTION:The thick wiring part 1 of AlXAu, etc. branches off to fine wirings 2, 3 with the surface covered with SiO2 or PSG5. The etching patterns 4 provided in square on the thick wiring part 1 can restrict the maximum stress generated on the protecting film less than breakdown strength. The patterns 4 are appropriately selected in numbers and size according to the thickness of the metallic film and the thickness and kinds of the surface protecting film. This constitution allows easy execution with effective reduction of cracks on the surface protecting film to improve the reliability of a device.
JP9358481A 1981-06-16 1981-06-16 Semiconductor integrated circuit Pending JPS57207353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9358481A JPS57207353A (en) 1981-06-16 1981-06-16 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9358481A JPS57207353A (en) 1981-06-16 1981-06-16 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS57207353A true JPS57207353A (en) 1982-12-20

Family

ID=14086324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9358481A Pending JPS57207353A (en) 1981-06-16 1981-06-16 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57207353A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117633A (en) * 1983-11-30 1985-06-25 Toshiba Corp Semiconductor device
JPS62501112A (en) * 1984-11-30 1987-04-30 ロ−ベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング Semiconductor device with metallized coating
US4797375A (en) * 1984-10-05 1989-01-10 Honeywell Inc. Fabrication of metal interconnect for semiconductor device
US4835591A (en) * 1987-12-29 1989-05-30 Mitsubishi Denki Kabushiki Kaisha Wiring arrangement for semiconductor devices
US5686356A (en) * 1994-09-30 1997-11-11 Texas Instruments Incorporated Conductor reticulation for improved device planarity

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185466A (en) * 1975-01-24 1976-07-27 Nippon Electric Co KAIROPATAANOYOBISONOSAKUGAHOHO
JPS54133090A (en) * 1978-04-07 1979-10-16 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185466A (en) * 1975-01-24 1976-07-27 Nippon Electric Co KAIROPATAANOYOBISONOSAKUGAHOHO
JPS54133090A (en) * 1978-04-07 1979-10-16 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117633A (en) * 1983-11-30 1985-06-25 Toshiba Corp Semiconductor device
US4797375A (en) * 1984-10-05 1989-01-10 Honeywell Inc. Fabrication of metal interconnect for semiconductor device
JPS62501112A (en) * 1984-11-30 1987-04-30 ロ−ベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング Semiconductor device with metallized coating
US4835591A (en) * 1987-12-29 1989-05-30 Mitsubishi Denki Kabushiki Kaisha Wiring arrangement for semiconductor devices
US5686356A (en) * 1994-09-30 1997-11-11 Texas Instruments Incorporated Conductor reticulation for improved device planarity
US6495907B1 (en) 1994-09-30 2002-12-17 Texas Instruments Incorporated Conductor reticulation for improved device planarity
US6653717B2 (en) 1994-09-30 2003-11-25 Texas Instruments Incorporated Enhancement in throughput and planarity during CMP using a dielectric stack containing an HDP oxide

Similar Documents

Publication Publication Date Title
JPS6437031A (en) Semiconductor device
JPS57207353A (en) Semiconductor integrated circuit
IE822564L (en) Fabrication a semiconductor device having a phosphosilicate glass layer
JPS52143785A (en) Semiconductor device
JPS5796542A (en) Semiconductor device
JPS562663A (en) Input output protective device for semiconductor ic
JPS6481236A (en) Semiconductor integrated circuit device
JPS6410631A (en) Semiconductor integrated circuit
JPS5268388A (en) Semiconductor integrated circuit
JPS644047A (en) Semiconductor device
JPS56165345A (en) Semiconductor device
JPS5736859A (en) Integrated circuit device
JPS5258490A (en) Semiconductor device
JPS5732642A (en) Semiconductor device
JPS5340278A (en) Manufacture of semiconductor device
JPS5529139A (en) Semiconductor integrated device
JPS6480041A (en) Semiconductor integrated circuit device
JPS5519880A (en) Manufacturing method of semiconductor device
JPS52113161A (en) Semiconductor device
JPS53114364A (en) Semiconductor integrated circuit device
JPH01200635A (en) Wiring protective film
JPS5386578A (en) Semiconductor device
JPS5272577A (en) Semiconductor device
JPS5352387A (en) Semiconductor integrated circuit
JPS5257780A (en) Semiconductor device