JPS5529139A - Semiconductor integrated device - Google Patents

Semiconductor integrated device

Info

Publication number
JPS5529139A
JPS5529139A JP10212278A JP10212278A JPS5529139A JP S5529139 A JPS5529139 A JP S5529139A JP 10212278 A JP10212278 A JP 10212278A JP 10212278 A JP10212278 A JP 10212278A JP S5529139 A JPS5529139 A JP S5529139A
Authority
JP
Japan
Prior art keywords
stopper
base plate
wiring
insulation film
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10212278A
Other languages
Japanese (ja)
Other versions
JPS626666B2 (en
Inventor
Masayuki Morita
Tadashi Sano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP10212278A priority Critical patent/JPS5529139A/en
Publication of JPS5529139A publication Critical patent/JPS5529139A/en
Publication of JPS626666B2 publication Critical patent/JPS626666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)

Abstract

PURPOSE:To prevent a device from electrostatic breakage by making such an arrangement as not to form a stopper of high density dispersion on a metallic pattern on an insulation film and also on a base plate immediately under a metallic wiring connected to the metallic pattern. CONSTITUTION:On surface of a semiconductor base plate, an n<+> stopper is not provided on a joining pad 1 and a section opposed thereto through a wiring 9 and an insulation film. As the n<+> stopper is much lower than an n<+> base plate in resistance, when the n<+> stopper reached a section on the base plate surface opposed to the wiring 9, the base plate resistance at this section beocmes small causing breakage to the insulation film. If the stopper is further removed by 10 - 20 mu outwardly from an entire area opposed to the joining pad the wiring, electrostatic breakage can be prevented more effectively.
JP10212278A 1978-08-22 1978-08-22 Semiconductor integrated device Granted JPS5529139A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10212278A JPS5529139A (en) 1978-08-22 1978-08-22 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10212278A JPS5529139A (en) 1978-08-22 1978-08-22 Semiconductor integrated device

Publications (2)

Publication Number Publication Date
JPS5529139A true JPS5529139A (en) 1980-03-01
JPS626666B2 JPS626666B2 (en) 1987-02-12

Family

ID=14318982

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10212278A Granted JPS5529139A (en) 1978-08-22 1978-08-22 Semiconductor integrated device

Country Status (1)

Country Link
JP (1) JPS5529139A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246554A (en) * 1985-08-23 1987-02-28 Nec Corp Complementary type mos semiconductor integrated circuit device
US4996995A (en) * 1988-06-27 1991-03-05 Kobishi Electric Co., Ltd. Ashtray

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246554A (en) * 1985-08-23 1987-02-28 Nec Corp Complementary type mos semiconductor integrated circuit device
US4996995A (en) * 1988-06-27 1991-03-05 Kobishi Electric Co., Ltd. Ashtray

Also Published As

Publication number Publication date
JPS626666B2 (en) 1987-02-12

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