JPS5258490A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5258490A
JPS5258490A JP50134059A JP13405975A JPS5258490A JP S5258490 A JPS5258490 A JP S5258490A JP 50134059 A JP50134059 A JP 50134059A JP 13405975 A JP13405975 A JP 13405975A JP S5258490 A JPS5258490 A JP S5258490A
Authority
JP
Japan
Prior art keywords
semiconductor device
protecting
anodized
positively
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50134059A
Other languages
Japanese (ja)
Inventor
Hiroshi Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50134059A priority Critical patent/JPS5258490A/en
Publication of JPS5258490A publication Critical patent/JPS5258490A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Abstract

PURPOSE: To perform passivation positively and improve the dielectric strength of a semiconductor device by protecting the Al wiring formed on a semiconductor substrate with an oxide film of metal such as Al that can be anodized, in addition to an SiO2 protecting film.
COPYRIGHT: (C)1977,JPO&Japio
JP50134059A 1975-11-10 1975-11-10 Semiconductor device Pending JPS5258490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50134059A JPS5258490A (en) 1975-11-10 1975-11-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50134059A JPS5258490A (en) 1975-11-10 1975-11-10 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5258490A true JPS5258490A (en) 1977-05-13

Family

ID=15119392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50134059A Pending JPS5258490A (en) 1975-11-10 1975-11-10 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5258490A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06314723A (en) * 1993-04-28 1994-11-08 Nec Corp Semiconductor device and manufacture thereof
US5688724A (en) * 1992-07-02 1997-11-18 National Semiconductor Corporation Method of providing a dielectric structure for semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5688724A (en) * 1992-07-02 1997-11-18 National Semiconductor Corporation Method of providing a dielectric structure for semiconductor devices
JPH06314723A (en) * 1993-04-28 1994-11-08 Nec Corp Semiconductor device and manufacture thereof

Similar Documents

Publication Publication Date Title
JPS5240071A (en) Semiconductor device
JPS5570060A (en) Semiconductor device
JPS5258490A (en) Semiconductor device
JPS5267963A (en) Manufacture of semiconductor unit
JPS5268388A (en) Semiconductor integrated circuit
JPS5436182A (en) Manufacture for semiconductor device
JPS5320862A (en) Production of semiconductor device
JPS5245270A (en) Semiconductor device
JPS5272186A (en) Production of mis type semiconductor device
JPS5227362A (en) Formation method of passivation film
JPS5216189A (en) Semiconductor device
JPS5272577A (en) Semiconductor device
JPS5216169A (en) Semiconductor device
JPS5419374A (en) Semiconductor device
JPS5325354A (en) Semiconductor device
JPS5232682A (en) Manufacturing process of semiconductor device
JPS5211772A (en) Semiconductor device
JPS5232683A (en) Manufacturing process of semiconductor device
JPS5352388A (en) Semiconductor device
JPS52103981A (en) Semiconductor device
JPS52155972A (en) Production of semiconductor device
JPS5247690A (en) Process for production of semiconductor device
JPS5245871A (en) Semiconductor device
JPS5242076A (en) Semiconductor
JPS5272173A (en) Semiconductor device and its production