JPS5796542A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5796542A
JPS5796542A JP17300080A JP17300080A JPS5796542A JP S5796542 A JPS5796542 A JP S5796542A JP 17300080 A JP17300080 A JP 17300080A JP 17300080 A JP17300080 A JP 17300080A JP S5796542 A JPS5796542 A JP S5796542A
Authority
JP
Japan
Prior art keywords
film
bonding pad
psg
poly
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17300080A
Other languages
Japanese (ja)
Other versions
JPS611898B2 (en
Inventor
Tatsuo Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17300080A priority Critical patent/JPS5796542A/en
Publication of JPS5796542A publication Critical patent/JPS5796542A/en
Publication of JPS611898B2 publication Critical patent/JPS611898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4

Abstract

PURPOSE:To improve a moisture resistant property by a method wherein a silicone nitride film or a poly-crystal Si film is formed between a PSG film and a bonding pad formed on a field insulating film. CONSTITUTION:A PSG film 3 is formed on a semiconductor substrate 1 with a field insulating film 2 in between. When an Al bonding pad 4 is formed on the PSG film 3, an Si3N4 film or a poly-crystal Si film 6 which has a larger area than the bonding pad 4 is provided between the PSG film 3 and the bonding pad 4. Then an insulating protective layer 5 such as a plasma nitride film is formed covering the circumference of the bonding pad 4. With above configuration, even if a cracking is generated on the insulating film in the vicinity of the bonding pad by some mechanical impact such as by a bonding tool, the deterioration of the moisture resistant property can be avoided.
JP17300080A 1980-12-08 1980-12-08 Semiconductor device Granted JPS5796542A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17300080A JPS5796542A (en) 1980-12-08 1980-12-08 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17300080A JPS5796542A (en) 1980-12-08 1980-12-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5796542A true JPS5796542A (en) 1982-06-15
JPS611898B2 JPS611898B2 (en) 1986-01-21

Family

ID=15952320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17300080A Granted JPS5796542A (en) 1980-12-08 1980-12-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5796542A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898939A (en) * 1981-12-08 1983-06-13 Matsushita Electronics Corp Semiconductor device
JPS62224037A (en) * 1986-03-26 1987-10-02 Nippon Denso Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898939A (en) * 1981-12-08 1983-06-13 Matsushita Electronics Corp Semiconductor device
JPH0139215B2 (en) * 1981-12-08 1989-08-18 Matsushita Electronics Corp
JPS62224037A (en) * 1986-03-26 1987-10-02 Nippon Denso Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS611898B2 (en) 1986-01-21

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