JPS5753964A - Multilayer wiring method - Google Patents

Multilayer wiring method

Info

Publication number
JPS5753964A
JPS5753964A JP12880080A JP12880080A JPS5753964A JP S5753964 A JPS5753964 A JP S5753964A JP 12880080 A JP12880080 A JP 12880080A JP 12880080 A JP12880080 A JP 12880080A JP S5753964 A JPS5753964 A JP S5753964A
Authority
JP
Japan
Prior art keywords
film
sio2
resist
sio2 film
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12880080A
Other languages
Japanese (ja)
Inventor
Hirotetsu Yoshino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP12880080A priority Critical patent/JPS5753964A/en
Publication of JPS5753964A publication Critical patent/JPS5753964A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable to remove the stepped section on an insulating film caused by underlayer wirings as well as to prevent the breaking of wire by a method wherein damage is formed on the surface of the interlayer insulating film located between the upperlayer and the lowerlayer wirings. CONSTITUTION:An Mo wiring layer 1 and an SiO2 film 3, having the prescribed pattern, are provided on a substrate 2. The damage is given on the surface of the SiO2 film by exposing the surface to the plasma of SiF4, a resist 5 is formed on the film with the pattern reverse to the Mo 1, and the SiO2 on a certain part of the Mo only is exposed. The resist 5 is slightly superposed on the Mo 1. The SiO2 film 3 is etched approximately in the same degree as the Mo 1. As the surface of the SiO2 film 3 is damaged, it has a poor adhesive property, it is etched from the interface also and the taper angle alpha is turned to approximately 20 degrees. When the resist film 5 is removed, the SiO2 film 3 having almost flat surface appears. If an Al layer 4 is formed on the film 3, a multilayer wiring wherein no breaking of wire is generated will be obtained.
JP12880080A 1980-09-17 1980-09-17 Multilayer wiring method Pending JPS5753964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12880080A JPS5753964A (en) 1980-09-17 1980-09-17 Multilayer wiring method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12880080A JPS5753964A (en) 1980-09-17 1980-09-17 Multilayer wiring method

Publications (1)

Publication Number Publication Date
JPS5753964A true JPS5753964A (en) 1982-03-31

Family

ID=14993738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12880080A Pending JPS5753964A (en) 1980-09-17 1980-09-17 Multilayer wiring method

Country Status (1)

Country Link
JP (1) JPS5753964A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221237A (en) * 1985-07-22 1987-01-29 Ulvac Corp Table for wafer positioning
US6583156B1 (en) 1998-09-04 2003-06-24 Vernalis Research Limited 4-Quinolinemethanol derivatives as purine receptor antagonists (1)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6221237A (en) * 1985-07-22 1987-01-29 Ulvac Corp Table for wafer positioning
US6583156B1 (en) 1998-09-04 2003-06-24 Vernalis Research Limited 4-Quinolinemethanol derivatives as purine receptor antagonists (1)

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