JPS6221237A - Table for wafer positioning - Google Patents
Table for wafer positioningInfo
- Publication number
- JPS6221237A JPS6221237A JP16013785A JP16013785A JPS6221237A JP S6221237 A JPS6221237 A JP S6221237A JP 16013785 A JP16013785 A JP 16013785A JP 16013785 A JP16013785 A JP 16013785A JP S6221237 A JPS6221237 A JP S6221237A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- gas
- flat surface
- jet nozzles
- peripheral edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、ウェハの中心位置合わせな行なう位置決め用
テーブルに関し、ウェハなカセットより取す出してプロ
セス機のホルダに移送させるとき、中心位置を合わせる
ために設置される中間テーブル等に用いて好適なもので
ある。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a positioning table for aligning the center of a wafer. It is suitable for use as an intermediate table or the like installed for matching purposes.
(従来の技術)
従来、ウェハをカセットより取り出してプロセス機のホ
ルダに、真空吸盤を具えたアーム等を介して移送させる
場合、該ホルダ上でウェハを所定の正しい位置に置くた
めに、ホルダの手前に中間テーブルを設け、該中間テー
ブル上で予めウェハの中心位置合わせが行われて来た。(Prior Art) Conventionally, when a wafer is removed from a cassette and transferred to a holder of a process machine via an arm equipped with a vacuum suction cup, the holder is An intermediate table is provided in front, and the center of the wafer is previously aligned on the intermediate table.
第4A図は、上記中間テーブル上に設けられ、ウェハの
中心位置合わせに用いられる従来のウェハ位置決め装置
の要部平面図、第4B図は第4A図のVI−IV線断面
図、第4C図は位置決めされた状態を示す断面図である
。図において、1,1はウェハ2の下面の周辺部をはホ
120°ずつに亙って支持する二つに分割された環状の
つめであって、これら両つめ1,1は、ウエノ〜2の下
面周辺部を支持する水平部1aと、該水平部1aの外側
に形成されウェハ2の周面位置を規制する上方へ立上が
ったつば1bとを有し、該つば1bの内面には斜面’1
cが形成されている。そしてこれらの両つめ1.I#
′i、図示しないリンク機構を介して、第4B図に示す
ように左右方向に対称的に、広がったシ狭まったシでき
るように中間テーブル上に支持されている。FIG. 4A is a plan view of a main part of a conventional wafer positioning device installed on the intermediate table and used for centering the wafer, FIG. 4B is a sectional view taken along the line VI-IV in FIG. 4A, and FIG. 4C is a sectional view showing a positioned state. In the figure, reference numerals 1 and 1 denote two annular pawls that support the periphery of the lower surface of the wafer 2 over an angle of 120 degrees each. The wafer 2 has a horizontal part 1a that supports the peripheral part of the lower surface of the wafer 2, and a collar 1b that is formed on the outside of the horizontal part 1a and rises upward to regulate the position of the circumferential surface of the wafer 2. '1
c is formed. And these two claws 1. I#
'i, It is supported on the intermediate table via a link mechanism (not shown) so that it can be expanded and narrowed symmetrically in the left-right direction as shown in FIG. 4B.
上記のようにしてリンク機構によシ中間テーブル上の所
定位置に設置された両つめ1,1(第4B図はこの時の
つめの位置を示す。)の直上から、ウェハ2を吸盤から
離して、開いたポジションの両つめ1,10間にウェハ
2を置く。次に、両つめ1,1を左右より閉じると、ウ
ェハ2の周縁がっば1bの内側斜面1cK当シ、ウェハ
の中心位置決めが行われて来た。As described above, the link mechanism moves the wafer 2 away from the suction cup from directly above both pawls 1, 1 (Figure 4B shows the position of the pawls at this time), which are installed at predetermined positions on the intermediate table. Then, place the wafer 2 between the claws 1 and 10 in the open position. Next, when both the claws 1, 1 are closed from the left and right sides, the center of the wafer is positioned on the inner slope 1cK of the periphery of the wafer 2.
(発明が解決しようとする問題点)
上記した従来のウェハ位置決め装置においては、つめl
の水平部Ia上に、ウェハ2の下面周辺部が直接当接す
るようになっている。ところが・ ウェハ2の下面には
通常レジストmが形成されているので、上記当接部のレ
ジストmが水平部1aとこすれ合って傷がついたシ、レ
ジスト膜の剥離が生じる恐れがあり、またこれがダスト
源となる等の問題点があった。(Problems to be Solved by the Invention) In the conventional wafer positioning device described above, the claw l
The peripheral portion of the lower surface of the wafer 2 is brought into direct contact with the horizontal portion Ia of the wafer 2 . However, since a resist m is normally formed on the lower surface of the wafer 2, there is a risk that the resist m at the abutting portion may rub against the horizontal portion 1a and be scratched, or the resist film may peel off. There were problems such as this becoming a source of dust.
本発明は、上記した従来技術の問題点を解決−ウェハの
下面を直接支持テーブル上に当接させないで位置決めを
行なうことを技術的課題としている。The technical problem of the present invention is to solve the above-mentioned problems of the prior art and to position the wafer without bringing the lower surface of the wafer into direct contact with the support table.
(問題点を解決するため0手段)
本発明は、上記した従来技術の問題点及び技術的課題を
解決するために、ウェハの外周よシ大きい平担面を有す
るチーグルの該平坦面上において、複数個のガス噴出孔
なウェハ外周近傍の円周上に配設したことを特徴として
いる。上記ガス噴出孔は円形開口のほか、まゆ形開口等
種々の形状に形成することが可能である0
(作 用)
本発明は、上記のように構成したことにより、アーム上
の吸盤等によってチーゾル上に移送されたウェハは、平
坦面上において、該ウェハ外周近傍に沿って円周上に配
設された複数個のガス噴出孔からの噴出ガスによって持
ち上げられて浮上し、且つその外周部に沿ってウェハ面
と直角方向に流れるガス流によって、水平方向の位置が
規制される。(No means for solving the problems) In order to solve the problems and technical problems of the prior art described above, the present invention provides the following methods: It is characterized by a plurality of gas ejection holes arranged on the circumference near the outer periphery of the wafer. The above-mentioned gas ejection hole can be formed in various shapes such as a circular opening or a cocoon-shaped opening. The wafer transferred above is lifted up and floated on the flat surface by gas ejected from a plurality of gas ejection holes arranged circumferentially near the outer periphery of the wafer, and The horizontal position is regulated by a gas flow flowing along the wafer in a direction perpendicular to the wafer surface.
従って、予め決められた位置に穿設された複数個のガス
噴出孔からの噴出ガスによってウェハはテーブル上の所
定位置に、位置決めされる。Therefore, the wafer is positioned at a predetermined position on the table by the gas ejected from the plurality of gas ejection holes drilled at predetermined positions.
(実施例) 次に、本発明の実施例を図面と共に説明する。(Example) Next, embodiments of the present invention will be described with reference to the drawings.
第1A図は本発明の第1実施例を示すウェハ位置決め用
テーブルの平面図、第1B図は第1A図のI−I線断面
図、第1C図は作動状態を示す断面図であって、チーグ
ル10は、ウェハ外径よシ大径の円形の平坦面11を有
し、該平坦面11の肩縁部には、ウェハの浮上位fft
Kはぼ等しい高さを有するつげ(ヘリ)12が一体に形
成されている。また下方には、ガス室13を有し、該ガ
ス室13は、接続口14を介して外部の圧縮がス源に連
通されている。そして上記平坦面11には、第1C図に
示すように、ウェハ2の外周面の近傍、即ちウェハ外周
面がほぼ孔の中央を通る位置に、全円周に亙って複数個
のガス噴出孔15がほぼ等間隔に穿設されている。FIG. 1A is a plan view of a wafer positioning table showing a first embodiment of the present invention, FIG. 1B is a cross-sectional view taken along line II in FIG. 1A, and FIG. 1C is a cross-sectional view showing an operating state. The cheagle 10 has a circular flat surface 11 with a diameter larger than the wafer outer diameter, and the shoulder edge of the flat surface 11 has a floating height fft of the wafer.
K is integrally formed with boxwood edges 12 having approximately the same height. Further, a gas chamber 13 is provided below, and the gas chamber 13 is communicated with an external compression source via a connection port 14 . As shown in FIG. 1C, on the flat surface 11, a plurality of gas jets are provided around the entire circumference near the outer circumferential surface of the wafer 2, that is, at a position where the outer circumferential surface of the wafer passes approximately through the center of the hole. Holes 15 are bored at approximately equal intervals.
上記のように構成されているので、テーブル10の平坦
面11に移送されて来たウェハ2は、ガス噴出孔15か
ら吹き出される噴出ガス流15aによって形成されたウ
ェハ外周面に沿う不連続なガスの膜によって、その水平
位置が規制され、平坦面11より浮上した位置で位置決
めが行われるO
この実施例では、平坦面11の外周縁につば12が設け
られることにより、孔15から吹き出すガス流151が
外方へ拡散するのが防止されるので、ウェハ2の水平位
置の規制作用は有効に行われる。With the above structure, the wafer 2 transferred to the flat surface 11 of the table 10 is discontinuously disposed along the outer circumferential surface of the wafer, which is formed by the jetted gas flow 15a blown out from the gas jetting hole 15. The horizontal position of the gas is regulated by the gas film, and positioning is performed at a position floating above the flat surface 11. Since the flow 151 is prevented from spreading outward, the horizontal position of the wafer 2 is effectively restricted.
また、ガス噴出孔の位置、大きさ、形状及び該孔からの
噴出ガスの流速、またつばとの間隔及びつばの高さ等は
、ウニ・・局面部において渦流等の乱れが生ぜず、ウエ
ノ%が浮上した状態で安定した中心位置を占めるように
、適宜の大きさに選定される。In addition, the position, size, shape of the gas ejection hole, the flow rate of the gas ejected from the hole, the distance from the brim and the height of the brim, etc. should be determined so that turbulence such as vortices does not occur in the curved part of the sea urchin. % is selected to have an appropriate size so that it occupies a stable center position in the floating state.
第2A図ないし第2C図は本発明の第2実施例を示す第
1八図ないし第1C図と同様の図面であって、この実施
例では、平坦面21に穿設されるガス噴出孔25a及び
25bが、同心円上に互いに位置をずらすようKして2
列に亙って穿設され、内側のガス噴出孔25aは、第1
実施例の噴出孔15と同様にウェハ2の外周面の近傍に
穿設さ江外側のガス噴出孔25bは、その外側に穿設さ
れている点で、第1実施例と異なシ、その他の点では変
シがない。2A to 2C are similar drawings to FIGS. 18 to 1C showing a second embodiment of the present invention, and in this embodiment, a gas ejection hole 25a formed in a flat surface 21 is shown. and 25b are shifted from each other on concentric circles, and 2
The inner gas ejection holes 25a are drilled across the rows, and the inner gas ejection holes 25a are
The gas ejection holes 25b on the outer side of the wafer 2 are formed near the outer peripheral surface of the wafer 2 in the same manner as the ejection holes 15 of the embodiment. There is no difference in terms of points.
この実施例によれば、第2C図に示すように、平坦面2
1上のウエノ12は、内側のガス噴出孔25aからの噴
出ガスによって持上げられて浮上し、該内側のガス噴出
孔25a及び外側のガス噴出孔25bの双方からの噴出
ガス流によって水平方向位置が規制される。なおこの場
合、つば22の内側面に内方へ突出した隆起部2’2a
を設ければ、外側のガス噴出孔2sbからのガス流にウ
ェハ2の外周面へ向かう偏)を与えて水平方向位置の規
制を、よシ積極的に行なうことが可能となる。According to this embodiment, as shown in FIG. 2C, the flat surface 2
The Ueno 12 on top of 1 is lifted and floated by the gas ejected from the inner gas ejection hole 25a, and its horizontal position is changed by the ejected gas flow from both the inner gas ejection hole 25a and the outer gas ejection hole 25b. Regulated. In this case, a raised portion 2'2a protruding inward on the inner surface of the collar 22
By providing this, it becomes possible to more actively regulate the horizontal position by imparting a bias toward the outer circumferential surface of the wafer 2 to the gas flow from the outer gas ejection holes 2sb.
この実施例の場合も、ウェハ外周面に渦流等の乱れが生
ぜず、ウェハが浮上した状態で安定した中心位置を占め
るように、各孔の位置、大きさ、つばとの関係等が決め
られる。In the case of this embodiment as well, the position, size, relationship with the collar, etc. of each hole are determined so that no disturbances such as vortices occur on the outer peripheral surface of the wafer and the wafer occupies a stable center position in a floating state. .
第3人図ないし第3C図は、本発明の第3実施例を示す
第1ム図ないし第1C図と同様の図面であって、この実
施例では、平坦面31に穿設されたガス噴出孔35がま
ゆ形に形成されている点で第1実施例と相違しており、
その他の点では変りはない。Figures 3 to 3C are similar to Figures 1 to 1C showing a third embodiment of the present invention; This embodiment differs from the first embodiment in that the hole 35 is formed in a cocoon shape.
There is no difference in other respects.
この実施例によれば、第3C図に示すように、平坦面3
1上のウェハ2は、まゆ形の空気噴出孔35からの噴出
空気によって持上げられて浮上し、同時に水平方向の位
置が規制されることは第1実施例と本質的には変りはな
いが、この実施例では、前記のようにガス噴出孔が円形
開口を連らねたようなまゆ形に形成されているので、ウ
エノ1の浮上作用が促進され、またウェハの周面を流れ
るガス流がほぼ連続した円筒状の膜を形成するようKな
るので、ウェハの水平方向位置の規制作用も促進される
。しかし、圧縮ガスの消費量が多くなる。According to this embodiment, as shown in FIG. 3C, the flat surface 3
The wafer 2 on the wafer 1 is lifted and floated by the air ejected from the cocoon-shaped air ejection hole 35, and at the same time, the horizontal position is regulated, which is essentially the same as in the first embodiment. In this embodiment, as described above, the gas ejection holes are formed in a cocoon-like shape with a series of circular openings, so that the floating action of the wafer 1 is promoted and the gas flow flowing around the circumferential surface of the wafer is Since a substantially continuous cylindrical film is formed, the action of regulating the horizontal position of the wafer is also facilitated. However, the consumption of compressed gas increases.
前記した各実施例においては、テーブルの平坦面の外周
縁に立上がシつばを設けた構造について説明したが、上
記つげはなくてもよい。この場合、ガス噴出孔から吹き
出したガス流は外側へ拡散する傾向を生ずるが、噴出ガ
ス流を絞って流速を増す等の手段を講することによシ、
上記の傾向を、阻止することは可能である。In each of the above-mentioned embodiments, a structure is described in which a raised brim is provided on the outer peripheral edge of the flat surface of the table, but the brim may not be provided. In this case, the gas flow blown out from the gas outlet tends to diffuse outward, but this can be avoided by taking measures such as restricting the blown gas flow and increasing the flow velocity.
It is possible to counteract the above trends.
また、ガス噴出孔の形状を円形とまゆ形の2種類につい
て説明したが、これに限らないことは勿論であシ、また
使用される圧縮ガス流には、通常、清浄な空気が使用さ
れるが、適宜他のガスを使用することも可能である。In addition, although we have explained two types of gas ejection holes, circular and cocoon-shaped, the shape is of course not limited to this, and the compressed gas flow used is usually clean air. However, it is also possible to use other gases as appropriate.
(発明の効果)
以上説明したように1本発明によれば次のような効果が
奏される。(Effects of the Invention) As explained above, according to the present invention, the following effects are achieved.
(1) ウェハ外周近傍の円周上に複数個のガス噴出
孔を設けたことによシ、ウェハを、位置決め用テーブル
上でガスiKよって浮上させ決められた所定位111に
保持させることができるので、ウェハ下面のレジスト膜
に傷がつく恐れがない。(1) By providing a plurality of gas ejection holes on the circumference near the outer periphery of the wafer, the wafer can be floated on the positioning table by gas iK and held at a predetermined position 111. Therefore, there is no risk of scratching the resist film on the bottom surface of the wafer.
(10圧縮ガスによる噴出ガス流によってウェハの位置
決めができるので、従来装置に用いられたリンク機構等
が不要となシ、構造が簡単でコストも低減することがで
きる。(10) Since the wafer can be positioned by the gas flow ejected from the compressed gas, there is no need for a link mechanism or the like used in the conventional apparatus, and the structure is simple and costs can be reduced.
011 常時ガスを噴出させていればテーブル上にダ
ストが乗らないので、ウェハをクリーンな状態に保持さ
せることができる。011 If the gas is constantly ejected, no dust will get on the table, so the wafer can be kept in a clean state.
第1A図は本発明の第1実施例を示す平面図、第1B図
は第1A図のI−I線断面図、第6C図は作動状態を示
す断面図、第2人図ないし第2C図及び第3A図ないし
第3C図は本発明の第2及び第3実施例を示す第1A図
ないし第1C図と同様の図面、第4A図ないし@40図
は従来装置の要部平面図及び異った作動位置を示す断面
図である。
2−−−ウェハ、 10.20,30−−−テープ2
、 11.21.31−m−平坦面、 12.22.
32−一一つば、 13.23.33−一一ガス室、
15.25.35−−−ガス噴出孔。
第1A図
第1C図
第2A図
第3A図Fig. 1A is a plan view showing the first embodiment of the present invention, Fig. 1B is a sectional view taken along the line I-I in Fig. 1A, Fig. 6C is a sectional view showing the operating state, and Figs. 2 to 2C. 3A to 3C are similar drawings to FIGS. 1A to 1C showing the second and third embodiments of the present invention, and FIGS. 4A to 40 are plan views of main parts of the conventional device and differences. FIG. 2---Wafer, 10.20,30---Tape 2
, 11.21.31-m-flat surface, 12.22.
32-11, 13.23.33-11 gas chamber,
15.25.35---Gas vent. Figure 1A Figure 1C Figure 2A Figure 3A
Claims (1)
上記平坦面上において、複数個のガス噴出孔をウェハ外
周近傍の円周上に配設したことを特徴とするウェハ位置
決め用テーブル。 2、前記各ガス噴出孔は円形開口をなしている特許請求
の範囲第1項記載のウェハ位置決め用テーブル。 3、前記各ガス噴出孔は円形開口をなし、ウェハ外周近
傍の円周上に2列に亙つて配設されている特許請求の範
囲第1項記載のウェハ位置決め用テーブル。 4、前記各ガス噴出孔はまゆ形開口をなしている特許請
求の範囲第1項記載のウェハ位置決め用テーブル。 5、前記平坦面の周縁部には、つばが形成されている特
許請求の範囲第1項から第4項までの何れか1項記載の
ウェハ位置決め用テーブル。[Claims] 1. Wafer positioning characterized in that, on the flat surface of the table having a flat surface larger than the outer circumference of the wafer, a plurality of gas ejection holes are arranged on a circumference near the outer circumference of the wafer. table. 2. The wafer positioning table according to claim 1, wherein each of the gas ejection holes has a circular opening. 3. The wafer positioning table according to claim 1, wherein each of the gas ejection holes has a circular opening and is arranged in two rows on the circumference near the outer periphery of the wafer. 4. The wafer positioning table according to claim 1, wherein each of the gas ejection holes has a cocoon-shaped opening. 5. The wafer positioning table according to any one of claims 1 to 4, wherein a flange is formed on the peripheral edge of the flat surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16013785A JPS6221237A (en) | 1985-07-22 | 1985-07-22 | Table for wafer positioning |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16013785A JPS6221237A (en) | 1985-07-22 | 1985-07-22 | Table for wafer positioning |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6221237A true JPS6221237A (en) | 1987-01-29 |
Family
ID=15708671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16013785A Pending JPS6221237A (en) | 1985-07-22 | 1985-07-22 | Table for wafer positioning |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6221237A (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100239785B1 (en) * | 1997-01-22 | 2000-01-15 | 김영환 | Wafer transfer device |
KR20030083502A (en) * | 2002-04-23 | 2003-10-30 | 주식회사 디엠에스 | Manufacturing method of liquid crystal display device using emitted fluid |
US6770851B2 (en) | 1999-12-29 | 2004-08-03 | Asm International N.V. | Method and apparatus for the treatment of substrates |
US6805749B2 (en) | 1996-07-08 | 2004-10-19 | Asm International, N.V. | Method and apparatus for supporting a semiconductor wafer during processing |
US6940047B2 (en) | 2003-11-14 | 2005-09-06 | Asm International N.V. | Heat treatment apparatus with temperature control system |
US6964751B2 (en) | 2001-05-16 | 2005-11-15 | Asm International N.V. | Method and device for heat treating substrates |
US7022627B2 (en) | 2003-10-31 | 2006-04-04 | Asm International N.V. | Method for the heat treatment of substrates |
US7217670B2 (en) | 2004-11-22 | 2007-05-15 | Asm International N.V. | Dummy substrate for thermal reactor |
US7410355B2 (en) | 2003-10-31 | 2008-08-12 | Asm International N.V. | Method for the heat treatment of substrates |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
US7601224B2 (en) | 2002-03-08 | 2009-10-13 | Asm America, Inc. | Method of supporting a substrate in a gas cushion susceptor system |
JP2010016199A (en) * | 2008-07-03 | 2010-01-21 | Murata Mach Ltd | Purge apparatus |
US7754013B2 (en) | 2002-12-05 | 2010-07-13 | Asm International N.V. | Apparatus and method for atomic layer deposition on substrates |
EP3002346A1 (en) | 2007-01-08 | 2016-04-06 | Eastman Kodak Company | Deposition system and method |
USRE48871E1 (en) | 2003-04-29 | 2022-01-04 | Asm Ip Holding B.V. | Method and apparatus for depositing thin films on a surface |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753964A (en) * | 1980-09-17 | 1982-03-31 | Sanyo Electric Co Ltd | Multilayer wiring method |
-
1985
- 1985-07-22 JP JP16013785A patent/JPS6221237A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5753964A (en) * | 1980-09-17 | 1982-03-31 | Sanyo Electric Co Ltd | Multilayer wiring method |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7312156B2 (en) | 1996-07-08 | 2007-12-25 | Asm International N.V. | Method and apparatus for supporting a semiconductor wafer during processing |
US6805749B2 (en) | 1996-07-08 | 2004-10-19 | Asm International, N.V. | Method and apparatus for supporting a semiconductor wafer during processing |
KR100239785B1 (en) * | 1997-01-22 | 2000-01-15 | 김영환 | Wafer transfer device |
US6770851B2 (en) | 1999-12-29 | 2004-08-03 | Asm International N.V. | Method and apparatus for the treatment of substrates |
US6964751B2 (en) | 2001-05-16 | 2005-11-15 | Asm International N.V. | Method and device for heat treating substrates |
US7601224B2 (en) | 2002-03-08 | 2009-10-13 | Asm America, Inc. | Method of supporting a substrate in a gas cushion susceptor system |
KR20030083502A (en) * | 2002-04-23 | 2003-10-30 | 주식회사 디엠에스 | Manufacturing method of liquid crystal display device using emitted fluid |
US7754013B2 (en) | 2002-12-05 | 2010-07-13 | Asm International N.V. | Apparatus and method for atomic layer deposition on substrates |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
USRE48871E1 (en) | 2003-04-29 | 2022-01-04 | Asm Ip Holding B.V. | Method and apparatus for depositing thin films on a surface |
US7410355B2 (en) | 2003-10-31 | 2008-08-12 | Asm International N.V. | Method for the heat treatment of substrates |
US7022627B2 (en) | 2003-10-31 | 2006-04-04 | Asm International N.V. | Method for the heat treatment of substrates |
US6940047B2 (en) | 2003-11-14 | 2005-09-06 | Asm International N.V. | Heat treatment apparatus with temperature control system |
US7217670B2 (en) | 2004-11-22 | 2007-05-15 | Asm International N.V. | Dummy substrate for thermal reactor |
EP3002346A1 (en) | 2007-01-08 | 2016-04-06 | Eastman Kodak Company | Deposition system and method |
US10351954B2 (en) | 2007-01-08 | 2019-07-16 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
US11136667B2 (en) | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
JP2010016199A (en) * | 2008-07-03 | 2010-01-21 | Murata Mach Ltd | Purge apparatus |
JP4692584B2 (en) * | 2008-07-03 | 2011-06-01 | 村田機械株式会社 | Purge device |
US8240346B2 (en) | 2008-07-03 | 2012-08-14 | Murata Machinery, Ltd. | Purge apparatus |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6221237A (en) | Table for wafer positioning | |
EP0201240B1 (en) | Apparatus for supporting and/or conveying a plate with fluid without physical contact | |
EP1083589B1 (en) | Wafer rotary holding apparatus | |
CN100590808C (en) | Single wafer etching apparatus | |
JPS6377569A (en) | Rotary type surface treatment device for substrate | |
JP4538849B2 (en) | Non-contact holding device | |
JPH08330383A (en) | Substrate transferer | |
US5159374A (en) | Water sealing develop ring | |
JPS61294812A (en) | Gas phase floating epitaxial growth equipment | |
JPH0632916B2 (en) | A method of suspending and floating a plate-shaped body in a non-contact state with a fluid | |
CN111370354A (en) | Etching device for wafer and annular glass carrier plate | |
JP4579354B2 (en) | Spin processing equipment | |
JP4111479B2 (en) | Wafer rotation holding device | |
JPH0124928Y2 (en) | ||
JPS61111251A (en) | Holding device for flat laminar member | |
JPS63225026A (en) | Holding device | |
JPH02312256A (en) | Wafer holding device | |
JPH02305740A (en) | Substrate transport device | |
JP4447673B2 (en) | Spin processing equipment | |
CN117712019A (en) | Chuck for wafer cleaning and supporting method of wafer on chuck | |
CN218926552U (en) | Nitrogen purging device and wafer laser processing system | |
JPS6387439A (en) | Holding device for plate-like body | |
JPH05335404A (en) | Non-contact retaining equipment | |
JPS63164236A (en) | Plate-shaped material holding apparatus | |
JP4025116B2 (en) | Plate material support table for plate material processing machine |