JPS61294812A - Gas phase floating epitaxial growth equipment - Google Patents

Gas phase floating epitaxial growth equipment

Info

Publication number
JPS61294812A
JPS61294812A JP13601085A JP13601085A JPS61294812A JP S61294812 A JPS61294812 A JP S61294812A JP 13601085 A JP13601085 A JP 13601085A JP 13601085 A JP13601085 A JP 13601085A JP S61294812 A JPS61294812 A JP S61294812A
Authority
JP
Japan
Prior art keywords
gas
reaction
wafer
semiconductor wafer
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13601085A
Inventor
Akimine Kobayashi
Hiromitsu Tokisue
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13601085A priority Critical patent/JPS61294812A/en
Publication of JPS61294812A publication Critical patent/JPS61294812A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To make it possible to hole stably the semiconductor wafer set afloat by the jetting reaction gas on the jet flow of the reaction gas, by giving the semiconductor the gas balancing force or the gravitational potential, and by installing in the gas reaction part the means to float and hold the semiconductor wafer at the center of the force.
CONSTITUTION: The semiconductor wafer 1 to be treated is mounted on the bend member 4B of the gas reacting part 4 in the reaction vessel 2. When the reaction gas G is supplied in this state from the pre-mixing equipment 6, it jets out upward from the injection hold 4A installed on the bend member 4B, after flowing into the gas vessel 4C of the gas reacting part 4 through the pipe 5. The semi-conductor wafer 1 is set afloat on the bend part 4B by the jet flow of the reaction gas from the injection hole 4A. Thus the semiconductor wafer 1 is held in the state wherein the wafer 1 does not physically contact with other bodies, and the reaction gas G acts on the lower surface of the wafer, where the eptaxial layer is grown and formed.
COPYRIGHT: (C)1986,JPO&Japio
JP13601085A 1985-06-24 1985-06-24 Gas phase floating epitaxial growth equipment Pending JPS61294812A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13601085A JPS61294812A (en) 1985-06-24 1985-06-24 Gas phase floating epitaxial growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13601085A JPS61294812A (en) 1985-06-24 1985-06-24 Gas phase floating epitaxial growth equipment

Publications (1)

Publication Number Publication Date
JPS61294812A true JPS61294812A (en) 1986-12-25

Family

ID=15165071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13601085A Pending JPS61294812A (en) 1985-06-24 1985-06-24 Gas phase floating epitaxial growth equipment

Country Status (1)

Country Link
JP (1) JPS61294812A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
JPH04137526U (en) * 1991-05-31 1992-12-22
US6770851B2 (en) 1999-12-29 2004-08-03 Asm International N.V. Method and apparatus for the treatment of substrates
US6805749B2 (en) 1996-07-08 2004-10-19 Asm International, N.V. Method and apparatus for supporting a semiconductor wafer during processing
US6940047B2 (en) 2003-11-14 2005-09-06 Asm International N.V. Heat treatment apparatus with temperature control system
US6964751B2 (en) 2001-05-16 2005-11-15 Asm International N.V. Method and device for heat treating substrates
US7022627B2 (en) 2003-10-31 2006-04-04 Asm International N.V. Method for the heat treatment of substrates
US7217670B2 (en) 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
WO2008085467A1 (en) * 2007-01-08 2008-07-17 Eastman Kodak Company Deposition system and method
US7410355B2 (en) 2003-10-31 2008-08-12 Asm International N.V. Method for the heat treatment of substrates
US7601224B2 (en) 2002-03-08 2009-10-13 Asm America, Inc. Method of supporting a substrate in a gas cushion susceptor system
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
JP2010515823A (en) * 2007-01-08 2010-05-13 イーストマン コダック カンパニー Supply equipment for thin film deposition
US7754013B2 (en) 2002-12-05 2010-07-13 Asm International N.V. Apparatus and method for atomic layer deposition on substrates

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155062A (en) * 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
JPH04137526U (en) * 1991-05-31 1992-12-22
US7312156B2 (en) 1996-07-08 2007-12-25 Asm International N.V. Method and apparatus for supporting a semiconductor wafer during processing
US6805749B2 (en) 1996-07-08 2004-10-19 Asm International, N.V. Method and apparatus for supporting a semiconductor wafer during processing
US6770851B2 (en) 1999-12-29 2004-08-03 Asm International N.V. Method and apparatus for the treatment of substrates
US6964751B2 (en) 2001-05-16 2005-11-15 Asm International N.V. Method and device for heat treating substrates
US7601224B2 (en) 2002-03-08 2009-10-13 Asm America, Inc. Method of supporting a substrate in a gas cushion susceptor system
US7754013B2 (en) 2002-12-05 2010-07-13 Asm International N.V. Apparatus and method for atomic layer deposition on substrates
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7410355B2 (en) 2003-10-31 2008-08-12 Asm International N.V. Method for the heat treatment of substrates
US7022627B2 (en) 2003-10-31 2006-04-04 Asm International N.V. Method for the heat treatment of substrates
US6940047B2 (en) 2003-11-14 2005-09-06 Asm International N.V. Heat treatment apparatus with temperature control system
US7217670B2 (en) 2004-11-22 2007-05-15 Asm International N.V. Dummy substrate for thermal reactor
WO2008085467A1 (en) * 2007-01-08 2008-07-17 Eastman Kodak Company Deposition system and method
JP2010515823A (en) * 2007-01-08 2010-05-13 イーストマン コダック カンパニー Supply equipment for thin film deposition
JP2010515821A (en) * 2007-01-08 2010-05-13 イーストマン コダック カンパニー Deposition system and method
JP2015078442A (en) * 2007-01-08 2015-04-23 イーストマン コダック カンパニー Deposition system and method
EP3002346A1 (en) 2007-01-08 2016-04-06 Eastman Kodak Company Deposition system and method

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