JPS56161656A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56161656A
JPS56161656A JP6473280A JP6473280A JPS56161656A JP S56161656 A JPS56161656 A JP S56161656A JP 6473280 A JP6473280 A JP 6473280A JP 6473280 A JP6473280 A JP 6473280A JP S56161656 A JPS56161656 A JP S56161656A
Authority
JP
Japan
Prior art keywords
film
aluminum
phosphorus glass
wire
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6473280A
Other languages
Japanese (ja)
Inventor
Toru Imamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP6473280A priority Critical patent/JPS56161656A/en
Publication of JPS56161656A publication Critical patent/JPS56161656A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To finely and densely form an aluminum pattern by forming two-layer film of phosphorus glass and oxidized film on a substrate, selectively etching the film in an overhung state, depositing aluminum thereon and then removing the phosphorus glass. CONSTITUTION:A phosphorus glass film 3 and an oxidized film 4 are sequentially formed on the overall surface of a substrate 1 on which a transistor or the like is formed and an insulating film 2 is formed on the surface, and a resin mask 5 is formed on an aluminum wire forming region. Then, the two layers of the films 4 and 3 are etched, and an overhung structure is formed of an oxidized film 7 and a phosphorus glass 6. After the aluminum is then deposited on the overall surface, the phosphorus glass 7 is etched and lifted off to form an aluminum wire pattern 9. Since the interval of the aluminum wire can be reduced in this manner, it can enhance the density of the wires even if the width of the wire is increased, thereby enhancing the reliability of the wiring.
JP6473280A 1980-05-16 1980-05-16 Manufacture of semiconductor device Pending JPS56161656A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6473280A JPS56161656A (en) 1980-05-16 1980-05-16 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6473280A JPS56161656A (en) 1980-05-16 1980-05-16 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56161656A true JPS56161656A (en) 1981-12-12

Family

ID=13266610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6473280A Pending JPS56161656A (en) 1980-05-16 1980-05-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56161656A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169977A (en) * 1982-03-30 1983-10-06 Canon Inc Manufacture of thin film transistor
JPH04129226A (en) * 1990-09-20 1992-04-30 Nec Yamagata Ltd Manufacture of semiconductor device
JPH04229625A (en) * 1990-04-30 1992-08-19 American Teleph & Telegr Co <Att> Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58169977A (en) * 1982-03-30 1983-10-06 Canon Inc Manufacture of thin film transistor
JPH0544184B2 (en) * 1982-03-30 1993-07-05 Canon Kk
JPH04229625A (en) * 1990-04-30 1992-08-19 American Teleph & Telegr Co <Att> Manufacture of semiconductor device
JPH04129226A (en) * 1990-09-20 1992-04-30 Nec Yamagata Ltd Manufacture of semiconductor device

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