JPS6420628A - Flattening method - Google Patents

Flattening method

Info

Publication number
JPS6420628A
JPS6420628A JP17591587A JP17591587A JPS6420628A JP S6420628 A JPS6420628 A JP S6420628A JP 17591587 A JP17591587 A JP 17591587A JP 17591587 A JP17591587 A JP 17591587A JP S6420628 A JPS6420628 A JP S6420628A
Authority
JP
Japan
Prior art keywords
film
etching
mask
electrode
organic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17591587A
Other languages
Japanese (ja)
Inventor
Shuichi Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17591587A priority Critical patent/JPS6420628A/en
Publication of JPS6420628A publication Critical patent/JPS6420628A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To flatten the exposed surface of an electrode without damaging the surface by protecting the surface of an electrode film at the time of etching a second organic film under a predetermined condition using an etching film of a first organic film on the electrode film. CONSTITUTION:An Si substrate 1 is covered with an SiO2 insulating film 4 having the same thickness as that of an Nb electrode layer 2 including the layer 2 formed on the substrate 1 and an etching mask 2 of a first organic film, and a second organic film 5 is provided on the film 4. When it is etched under the conditions that the etching rates of the films 4, 5 are equal and the etching rate of the mask 2 is smaller than that of the film 5, the film 3 is exposed in a state that the surface is protected by a remaining mask 6. When the mask 6 is cleaned by ultrasonic cleaning, the film 3 is preferably flattened without damage.
JP17591587A 1987-07-16 1987-07-16 Flattening method Pending JPS6420628A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17591587A JPS6420628A (en) 1987-07-16 1987-07-16 Flattening method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17591587A JPS6420628A (en) 1987-07-16 1987-07-16 Flattening method

Publications (1)

Publication Number Publication Date
JPS6420628A true JPS6420628A (en) 1989-01-24

Family

ID=16004473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17591587A Pending JPS6420628A (en) 1987-07-16 1987-07-16 Flattening method

Country Status (1)

Country Link
JP (1) JPS6420628A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069316A1 (en) * 2000-03-14 2001-09-20 Takashi Nishi Exposure controlling photomask and production method therefor
WO2004008897A1 (en) * 2002-07-18 2004-01-29 Thermobalance Ag Downy filling material and method for producing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107743A (en) * 1984-10-30 1986-05-26 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107743A (en) * 1984-10-30 1986-05-26 Nec Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001069316A1 (en) * 2000-03-14 2001-09-20 Takashi Nishi Exposure controlling photomask and production method therefor
US7052806B2 (en) 2000-03-14 2006-05-30 Takashi Nishi Exposure controlling photomask and production method therefor
JP4557242B2 (en) * 2000-03-14 2010-10-06 孝 西 Photomask for controlling exposure amount and method for manufacturing the same
WO2004008897A1 (en) * 2002-07-18 2004-01-29 Thermobalance Ag Downy filling material and method for producing the same

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