JPS56144556A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56144556A JPS56144556A JP4782080A JP4782080A JPS56144556A JP S56144556 A JPS56144556 A JP S56144556A JP 4782080 A JP4782080 A JP 4782080A JP 4782080 A JP4782080 A JP 4782080A JP S56144556 A JPS56144556 A JP S56144556A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- si3n4
- polycrystalline
- substrate
- damaged
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To prevent the Si substrate in the element forming region from being damaged, by performing the plasma etching of the wiring polycrystalline Si after protecting the Si3N4 used to form an element separating oxide film with SiO2. CONSTITUTION:On a P type Si substrate 1, an SiO2 film 11 is formed and thereon, a mask of double-layer structure comprising Si3N4 12 and SiO2 16 is formed. Then, a thick SiO2 13 is formed by a heat treatment and coated with a doped polycrystalline Si 14. A resist mask is applied, and the polycrystalline Si 14 is plasma-etched to form a wiring 14A on the element separating layer. Thereby, being protected by the SiO2 16, the Si3N4 12 is kept from the plasma etching. Then, SiO2 15 is formed as an interlayer insulating film. Thereafter, the whole except for the element forming region is covered with a resist mask and successively etched until the substrate surface 17 is exposed, and an FET, for example, is formed. Because the FET forming surface has not been damaged, a highly reliable device, which has stable characteristics, can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4782080A JPS56144556A (en) | 1980-04-11 | 1980-04-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4782080A JPS56144556A (en) | 1980-04-11 | 1980-04-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56144556A true JPS56144556A (en) | 1981-11-10 |
Family
ID=12785986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4782080A Pending JPS56144556A (en) | 1980-04-11 | 1980-04-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56144556A (en) |
-
1980
- 1980-04-11 JP JP4782080A patent/JPS56144556A/en active Pending
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