JPS5629365A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5629365A JPS5629365A JP10403679A JP10403679A JPS5629365A JP S5629365 A JPS5629365 A JP S5629365A JP 10403679 A JP10403679 A JP 10403679A JP 10403679 A JP10403679 A JP 10403679A JP S5629365 A JPS5629365 A JP S5629365A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- auge
- electrode
- thickness
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000006185 dispersion Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
Abstract
PURPOSE:To decrease the dispersion in resistance of Hall sensor elements and unbalanced voltages by overlapping a metal layer whose main component is Au, a Ta layer, and an Au layer on a GaAs substrate, and specifying the thicknesses of said layers. CONSTITUTION:SiO2 4 is deposited on an epitaxial layer 3.1 having the carrier concentration of about 5X10<15>cm<-3> on a GaAs insulating substrate 3 of (100) face. A hole is perforated in the SiO2 film 4, and AuGe 5, Ta 6, and Au 7 are consecutively deposited. In this case, the thicknesses of said layers are controlled so that the thickness of AuGe is 0.1-0.3mum, the thickness of Ta is 0.1-0.3mum, and the thickness of Au is 1-2mum. Then, each layer except the electrode 2 is etched out by the photoetching method. Furthermore, a Hall bar 1 and the electrode 2 are covered by a resist, the SiO2 film 4 is etched out, and the epitaxial layer 3.1 and the substrate 3 are etched. Finally, the heat treatment is performed in H2, and uniform ohmic contact is formed between AuGe and GaAs of the electrode 2. In this constitution of the Hall sensor, the dispersion in the unbalanced voltages and the resistance of the elements are very small, and the yield rate is excellent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10403679A JPS5629365A (en) | 1979-08-17 | 1979-08-17 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10403679A JPS5629365A (en) | 1979-08-17 | 1979-08-17 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5629365A true JPS5629365A (en) | 1981-03-24 |
Family
ID=14369993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10403679A Pending JPS5629365A (en) | 1979-08-17 | 1979-08-17 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5629365A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101060413B1 (en) * | 2004-04-29 | 2011-08-29 | 엘지디스플레이 주식회사 | Image display device and manufacturing method thereof |
| CN104393167A (en) * | 2014-09-25 | 2015-03-04 | 中国科学院物理研究所 | Hall strip micro device |
-
1979
- 1979-08-17 JP JP10403679A patent/JPS5629365A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101060413B1 (en) * | 2004-04-29 | 2011-08-29 | 엘지디스플레이 주식회사 | Image display device and manufacturing method thereof |
| CN104393167A (en) * | 2014-09-25 | 2015-03-04 | 中国科学院物理研究所 | Hall strip micro device |
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