JPS5635487A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5635487A
JPS5635487A JP11085879A JP11085879A JPS5635487A JP S5635487 A JPS5635487 A JP S5635487A JP 11085879 A JP11085879 A JP 11085879A JP 11085879 A JP11085879 A JP 11085879A JP S5635487 A JPS5635487 A JP S5635487A
Authority
JP
Japan
Prior art keywords
implantation
active layer
type gaas
implanted
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11085879A
Other languages
Japanese (ja)
Inventor
Ario Mita
Hiromichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11085879A priority Critical patent/JPS5635487A/en
Publication of JPS5635487A publication Critical patent/JPS5635487A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Abstract

PURPOSE:To control the current passing area of the semiconductor device by implanting an ion beam on the semiconductor layer by providing with a mask thereon and varying the implanting angle thereof. CONSTITUTION:An N type AlGaAs 4, an N type GaAs active layer 5, a P type AlGaAs 6 and a P<+> type GaAs 7 are laminated on an N<+> type GaAs substrate 2, a mask 50 is retained at predetermined distance in disposition, and proton 51 is implanted from obliquely upper rightward and leftward directions thereto. In this case the outside of the region 52c is implanted in double. The implantation depth is formed to 0.5mum above the active layer 5, and adverse effect of the implantation to the crystal defects to the active layer is prevented. After the implantation, a heat treatment is executed. According to this configuration, the active streak width l of the narrow width less than 10mum is regeneratively formed in arbitrary depth, and a desired current passing area can be obtained. After the heat treatment, both ohmic electrodes 60, 61 are attached to both side thereof.
JP11085879A 1979-08-30 1979-08-30 Manufacture of semiconductor device Pending JPS5635487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11085879A JPS5635487A (en) 1979-08-30 1979-08-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11085879A JPS5635487A (en) 1979-08-30 1979-08-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5635487A true JPS5635487A (en) 1981-04-08

Family

ID=14546448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11085879A Pending JPS5635487A (en) 1979-08-30 1979-08-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5635487A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4856013A (en) * 1986-10-29 1989-08-08 Seiko Epson Corporation Semiconductor laser having an active layer and cladding layer
EP0609836A1 (en) * 1993-02-01 1994-08-10 Nec Corporation Surface emitting laser and method for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4856013A (en) * 1986-10-29 1989-08-08 Seiko Epson Corporation Semiconductor laser having an active layer and cladding layer
EP0609836A1 (en) * 1993-02-01 1994-08-10 Nec Corporation Surface emitting laser and method for fabricating the same
US5500868A (en) * 1993-02-01 1996-03-19 Nec Corporation Vertical-to-surface transmission electro-photonic device with ion implanted current control regions
US5637511A (en) * 1993-02-01 1997-06-10 Kurihara; Kaori Vertical-to-surface transmission electro-photonic device and method for fabricating the same

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