JPS52137280A - Contacting structure on semiconductor array - Google Patents

Contacting structure on semiconductor array

Info

Publication number
JPS52137280A
JPS52137280A JP5419777A JP5419777A JPS52137280A JP S52137280 A JPS52137280 A JP S52137280A JP 5419777 A JP5419777 A JP 5419777A JP 5419777 A JP5419777 A JP 5419777A JP S52137280 A JPS52137280 A JP S52137280A
Authority
JP
Japan
Prior art keywords
contacting structure
semiconductor array
array
semiconductor
contacting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5419777A
Other languages
Japanese (ja)
Inventor
Kuroodo Karubaaru Jiyan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS52137280A publication Critical patent/JPS52137280A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP5419777A 1976-05-11 1977-05-11 Contacting structure on semiconductor array Pending JPS52137280A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7614163A FR2351504A1 (en) 1976-05-11 1976-05-11 NEW SWITCHING DEVICE ON A SEMICONDUCTOR ASSEMBLY

Publications (1)

Publication Number Publication Date
JPS52137280A true JPS52137280A (en) 1977-11-16

Family

ID=9172979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5419777A Pending JPS52137280A (en) 1976-05-11 1977-05-11 Contacting structure on semiconductor array

Country Status (5)

Country Link
JP (1) JPS52137280A (en)
CA (1) CA1089571A (en)
DE (1) DE2721114A1 (en)
FR (1) FR2351504A1 (en)
GB (1) GB1545425A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591890A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Photodiode
JPS55153385A (en) * 1979-05-18 1980-11-29 Nippon Telegr & Teleph Corp <Ntt> Current squeezing type semiconductor device
JPS5621387A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Semiconductor luminescent device
CN116978999A (en) * 2023-09-22 2023-10-31 南昌凯捷半导体科技有限公司 Current-limited Micro-LED chip and manufacturing method thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4182995A (en) * 1978-03-16 1980-01-08 Rca Corporation Laser diode with thermal conducting, current confining film
DE2856507A1 (en) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In SEMICONDUCTOR LASER DIODE
DE3332398A1 (en) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart MULTIMODE LASER

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5591890A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Photodiode
JPS6157718B2 (en) * 1978-12-28 1986-12-08 Fujitsu Ltd
JPS55153385A (en) * 1979-05-18 1980-11-29 Nippon Telegr & Teleph Corp <Ntt> Current squeezing type semiconductor device
JPS5621387A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Semiconductor luminescent device
CN116978999A (en) * 2023-09-22 2023-10-31 南昌凯捷半导体科技有限公司 Current-limited Micro-LED chip and manufacturing method thereof
CN116978999B (en) * 2023-09-22 2024-01-02 南昌凯捷半导体科技有限公司 Current-limited Micro-LED chip and manufacturing method thereof

Also Published As

Publication number Publication date
CA1089571A (en) 1980-11-11
DE2721114A1 (en) 1977-11-24
GB1545425A (en) 1979-05-10
FR2351504A1 (en) 1977-12-09
FR2351504B1 (en) 1980-04-18

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