CA1089571A - Contacting structure on a semiconductor arrangement - Google Patents
Contacting structure on a semiconductor arrangementInfo
- Publication number
- CA1089571A CA1089571A CA278,081A CA278081A CA1089571A CA 1089571 A CA1089571 A CA 1089571A CA 278081 A CA278081 A CA 278081A CA 1089571 A CA1089571 A CA 1089571A
- Authority
- CA
- Canada
- Prior art keywords
- arrangement
- zone
- layer
- gallium arsenide
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000000875 corresponding effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
ABSTRACT OF THE DISCLOSURE: In a new contacting structure on a semiconductor substrate, the upper surface of the substrate made of a material corres-ponding to the formula As1-x Alx Ga, with x#0.3, is partly covered by a layer of gallium arsenide. The whole of this surface is covered with a metallic layer. The zones of electrical current are localised below the layer of gallium arsenide.
Description
7~
~leterojunction structures based on gallium arsenide are primarily used in optical-fibre telecommunication systems. Accordingly, in ordex to obtain correct coupling of the light-emittin~ components with optical fibres, it is of j advantage to reduce the dimensions of their active parts by as ; much as possible.
Various processes have been used for this purpose, including the implantation of protons in order to render certain zones insulating, etching the so-called "mes~" type for eliminating certain unuseful zones, etc.
All these methods are attended by the disad-vantage that they involve the risk of the active parts of the , component to be damaged.
It is an object of the present invention to provide a new contacting structure which enables the dimensions of the active parts of photosensitive or electroluminescent components to be reduced.
According to the invention a contacting structure on a semiconductor arrangement comprises a metallic layer deposited on one face of a sllbstrate, wherein said one face comprises at least one first and one second zone made respectively of a first material and a second material,the respective contacts on the first and second zones offering ,~ resistances of which one is very high and the other very low.
The invention will be better understood from the following description in conjunction with the accompanying ' drawings, wherein:
~l/
lO~ i7i Fig. 1 is a ~erspective view o a "laser" diode of known type.
Yigs. 2, 3 and 4 show a "laser" diode acco~ding to the invention during the various steps involved in its production.
Fig. 5 is a perspective view o this diode.
Fig. 6 is a perspective view showing the "laser" cavity of the diode illustrated in Fig. 5.
~.
Fig. 7 is a cross-section through one example of embodi-ment of the invention. -In all the flgures~ the same references denote the same elements.
In Fig. 1, a monocrystalline substrate of galliumarsenide with transverse dimensions of the order of 100 microns to 300 microns has been cleaved on two opposite surfaces so that the surfaces are planar and parallel.
This substrate has, for example, n-type conductivity and is heavily doped (about 1018 at/cc).
A first layer 2 with a thickness of the order of 1 micron has been applied to this substrate by epitaxial growth, being of the same conductivit~ type as the substrate but having the composition Gal x AlxAs.
~ This epitaxial growth may be carried out in the liquid phase at 800C to 960C in a bath of gallium saturated with gallium arsenide and also containing aluminium in solution.
Processes o~ this t~pe are t.~ell known in the art. The value of ~; x may vary rom 0,1 to a.3. This layer is of ; : - - . , : .
'~, , , ~ , .
::
n-type conductivity, but with a doping concentration of 1016 to 1018 at/cc for example. Another layer which will ~- be the seat of the emission of light and which has the composition Ga1 y Aly As (y < x) has been applied to this 5 layer by the same process of epitaxial growth.
This layer 3 will have a thickness of the order of 0.1 to 1 micron and its conductivity type will be different.
The only condition is that the width of its forbidden band should be less than that of the layers by which it is enclo-10 sed. A layer 4 of different composition, Ga1 x~ A1x, As ~ (x' = approximately 0.3) and doped with p-type conductivity 3 is deposited onto this layer by the same process. The thickness ~ of the layer 4 is of the same order of magnitude as that ;~ of the layer 2. A terminal layer 5 of gallium arsenide heavily v 15 doped with pl type conductivity and having a thickness of the order of 1 micron is deposited onto the layer 4.
ç A double heterojunction diode is thus obtained and it is known that, for a range of voltages directly biassing the 4 ~ diode, the zone 3 may be the seat of electroluminescence . 20 phenomena. To make a laser, this phenomenon has to be loca-lised in a resonant cavity, i.e a cavity of which all the boundariesare determined with considerable precision.
; Known systems are subjected, for example, to attacks of the "mesa" type or to proton bombardment and, by masking, 25 certain parts of the above-mentioned layers are rendered ' insulating.
The localisation process according to the invention i ~
~ , , ,~ ~A~
.~ :
. ,.
' ~ ' ' : .
~O~t~P'7l and the component thus obtained are described with reference to the ollowing Eigurës:
Fiy. 2 sho~s the layers L, 2, 3, 4 and S ater their for-mation by epit~xy.
In Fig 3, the layer S has been attacked through a mask in such a way that it only remains in the form of a band exten-ding from one cle~ved surface to the other surface of the sub-strate. This band 6, which has a transverse dimension of the order of 1 micron, may be obtained with a great accuracy. The attack may be made either chemicaLly or by ion machining. It is carried out in such à way as to remove the layer 5 at the places where it has not been protected so as to expose the layer i 4. There thus remains a band 6 of gallium arsenide.
In Fig. 4, a metalLic layer 7 has been deposited onto the assembly, or example by evaporation in vacuo. A succession of metallic materials may be deposited in this way.
Now, it is known that the contacts on the layers made of materialssuch as Gal x' Alx, As (x' = approximately 0.3) and weakly doped oer a high resistance to the passage of the ~; 20 current~ By contrast, the metallic contacts on GaAs are very good. This would appear to be due to the fact that the pre-I sence of aluminium is the cause of the production of a thin - layer of alumina which acts as an insulator.
The result a this is that the lines o current are localised below the band of GaAs. Experience has shown that these lines of current remain substantially parallel and arrive , :~
on the active zone 3 perpendicularly of its two end aces.
The assembly thus obtained is shown in perspective in Fig. 5. It can be seen that the zone 3 is only luminescent in ~ 30 its part which faces the band 6 o GaAs. There has thus been ,~ .
s created in this zone a cavity o which the two extreme edges j ~ - 4 -~.
': , -~0~95'~'1 are the two cLeaved suraces o the substrate and which is delimited by vertical planes which are the respective extensions of the two vertical sides o~ the ~and of As and extending from one cleaved surface to the other of the substrate. This cavity has all the characteristics o a cavity of the PEROT-FABRY-type and is thus the seat of an emission of coherent light when the diode is excited. Its horizontal dimension may be of s the order of 0.1 to 1 micron and the radiation (Fiy. 6) takes i~ place laterally in the direction indicated by the arrow. It has thus been possible to ~tilise a generally troublesome property o contacts made on composition of the Gal x Alx As-:J~
type.
Fig. 7 shows an electroluminescent diode which emits light at its upper surface, In this Fig, the band of GaA~ is in the form o a ring and the upper layer is transparent to the radiation emitted, the current being concentrated in the central part o the diode.
The invention ma~ be appLied in many other cases where there is a need or a dielectric, or example in planar tech-nologyj in which case the metal zone interface GA Al As acts as the dielectric.
, ., : -.
~ ' : , ' : ~' : . _ 5 _ ., ..,, ,~,,,..
.,~
~leterojunction structures based on gallium arsenide are primarily used in optical-fibre telecommunication systems. Accordingly, in ordex to obtain correct coupling of the light-emittin~ components with optical fibres, it is of j advantage to reduce the dimensions of their active parts by as ; much as possible.
Various processes have been used for this purpose, including the implantation of protons in order to render certain zones insulating, etching the so-called "mes~" type for eliminating certain unuseful zones, etc.
All these methods are attended by the disad-vantage that they involve the risk of the active parts of the , component to be damaged.
It is an object of the present invention to provide a new contacting structure which enables the dimensions of the active parts of photosensitive or electroluminescent components to be reduced.
According to the invention a contacting structure on a semiconductor arrangement comprises a metallic layer deposited on one face of a sllbstrate, wherein said one face comprises at least one first and one second zone made respectively of a first material and a second material,the respective contacts on the first and second zones offering ,~ resistances of which one is very high and the other very low.
The invention will be better understood from the following description in conjunction with the accompanying ' drawings, wherein:
~l/
lO~ i7i Fig. 1 is a ~erspective view o a "laser" diode of known type.
Yigs. 2, 3 and 4 show a "laser" diode acco~ding to the invention during the various steps involved in its production.
Fig. 5 is a perspective view o this diode.
Fig. 6 is a perspective view showing the "laser" cavity of the diode illustrated in Fig. 5.
~.
Fig. 7 is a cross-section through one example of embodi-ment of the invention. -In all the flgures~ the same references denote the same elements.
In Fig. 1, a monocrystalline substrate of galliumarsenide with transverse dimensions of the order of 100 microns to 300 microns has been cleaved on two opposite surfaces so that the surfaces are planar and parallel.
This substrate has, for example, n-type conductivity and is heavily doped (about 1018 at/cc).
A first layer 2 with a thickness of the order of 1 micron has been applied to this substrate by epitaxial growth, being of the same conductivit~ type as the substrate but having the composition Gal x AlxAs.
~ This epitaxial growth may be carried out in the liquid phase at 800C to 960C in a bath of gallium saturated with gallium arsenide and also containing aluminium in solution.
Processes o~ this t~pe are t.~ell known in the art. The value of ~; x may vary rom 0,1 to a.3. This layer is of ; : - - . , : .
'~, , , ~ , .
::
n-type conductivity, but with a doping concentration of 1016 to 1018 at/cc for example. Another layer which will ~- be the seat of the emission of light and which has the composition Ga1 y Aly As (y < x) has been applied to this 5 layer by the same process of epitaxial growth.
This layer 3 will have a thickness of the order of 0.1 to 1 micron and its conductivity type will be different.
The only condition is that the width of its forbidden band should be less than that of the layers by which it is enclo-10 sed. A layer 4 of different composition, Ga1 x~ A1x, As ~ (x' = approximately 0.3) and doped with p-type conductivity 3 is deposited onto this layer by the same process. The thickness ~ of the layer 4 is of the same order of magnitude as that ;~ of the layer 2. A terminal layer 5 of gallium arsenide heavily v 15 doped with pl type conductivity and having a thickness of the order of 1 micron is deposited onto the layer 4.
ç A double heterojunction diode is thus obtained and it is known that, for a range of voltages directly biassing the 4 ~ diode, the zone 3 may be the seat of electroluminescence . 20 phenomena. To make a laser, this phenomenon has to be loca-lised in a resonant cavity, i.e a cavity of which all the boundariesare determined with considerable precision.
; Known systems are subjected, for example, to attacks of the "mesa" type or to proton bombardment and, by masking, 25 certain parts of the above-mentioned layers are rendered ' insulating.
The localisation process according to the invention i ~
~ , , ,~ ~A~
.~ :
. ,.
' ~ ' ' : .
~O~t~P'7l and the component thus obtained are described with reference to the ollowing Eigurës:
Fiy. 2 sho~s the layers L, 2, 3, 4 and S ater their for-mation by epit~xy.
In Fig 3, the layer S has been attacked through a mask in such a way that it only remains in the form of a band exten-ding from one cle~ved surface to the other surface of the sub-strate. This band 6, which has a transverse dimension of the order of 1 micron, may be obtained with a great accuracy. The attack may be made either chemicaLly or by ion machining. It is carried out in such à way as to remove the layer 5 at the places where it has not been protected so as to expose the layer i 4. There thus remains a band 6 of gallium arsenide.
In Fig. 4, a metalLic layer 7 has been deposited onto the assembly, or example by evaporation in vacuo. A succession of metallic materials may be deposited in this way.
Now, it is known that the contacts on the layers made of materialssuch as Gal x' Alx, As (x' = approximately 0.3) and weakly doped oer a high resistance to the passage of the ~; 20 current~ By contrast, the metallic contacts on GaAs are very good. This would appear to be due to the fact that the pre-I sence of aluminium is the cause of the production of a thin - layer of alumina which acts as an insulator.
The result a this is that the lines o current are localised below the band of GaAs. Experience has shown that these lines of current remain substantially parallel and arrive , :~
on the active zone 3 perpendicularly of its two end aces.
The assembly thus obtained is shown in perspective in Fig. 5. It can be seen that the zone 3 is only luminescent in ~ 30 its part which faces the band 6 o GaAs. There has thus been ,~ .
s created in this zone a cavity o which the two extreme edges j ~ - 4 -~.
': , -~0~95'~'1 are the two cLeaved suraces o the substrate and which is delimited by vertical planes which are the respective extensions of the two vertical sides o~ the ~and of As and extending from one cleaved surface to the other of the substrate. This cavity has all the characteristics o a cavity of the PEROT-FABRY-type and is thus the seat of an emission of coherent light when the diode is excited. Its horizontal dimension may be of s the order of 0.1 to 1 micron and the radiation (Fiy. 6) takes i~ place laterally in the direction indicated by the arrow. It has thus been possible to ~tilise a generally troublesome property o contacts made on composition of the Gal x Alx As-:J~
type.
Fig. 7 shows an electroluminescent diode which emits light at its upper surface, In this Fig, the band of GaA~ is in the form o a ring and the upper layer is transparent to the radiation emitted, the current being concentrated in the central part o the diode.
The invention ma~ be appLied in many other cases where there is a need or a dielectric, or example in planar tech-nologyj in which case the metal zone interface GA Al As acts as the dielectric.
, ., : -.
~ ' : , ' : ~' : . _ 5 _ ., ..,, ,~,,,..
.,~
Claims (7)
1. A contacting structure on a semiconductor arrangement comprising a metallic layer deposited on one face of a sub-strate, wherein said one face comprises at least one first and one second zone made respectively of a first material and a second material, the respective contacts on the first and second zones offering resistances of which one is very high and the other very low.
2. A contacting structure of a semiconductor arrangement comprising a metallic layer deposited onto one face of this arrangement, wherein said surface of said arrangement com-prises at least one first and one second zone, said first zone covering partially said second zone and being made of a material ensuring good electrical contact with said metallic layer, said second zone containing, incorporated in said material, a readily oxidisable element the oxide of which is insulating.
3. A structure as claimed in claim 2, wherein said material is gallium arsenide and said zone is made of the com-position Ga1-x Alx As with x approximately 0.3
4. A structure as claimed in claim 3, wherein the first zone is in the form of a rectangular ribbon extending from one lateral surface to the other surface of the arrangement.
5. A structure as claimed in claim 4, wherein said arrangement is a monocrystal having two cleaved lateral sur-faces.
6. A structure as claimed in claim 5, wherein said arrangement is made of gallium arsenide and comprises epitaxied onto one of its faces, layers of opposite conductivity types and with the composition Ga1-x Alx As, x assuming a value sub-stantially equal to 0.3 for the upper layer, an intermediate layer having a composition corresponding to the formula Gay Al1-y As, y being selected in such a way that the forbidden band of this material is narrower than that of the two materials of which the two enclosing layers consist, a second contact being provided on the arrangement for directly biassing said junction and the portion of said intermediate layer situated below said band acting as a "laser" cavity.
7. A method of making contact on a semiconductor substrate made at least partly of a material corresponding to the formula Ga1-x Alx As with x approximately 0.3, wherein it comprises the steps of epitaxially growing gallium arsenide on one sur-face of the substrate, cutting the layer of gallium arsenide thus obtained and depositing metallic layers onto the arrangement thus obtained.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7614163A FR2351504A1 (en) | 1976-05-11 | 1976-05-11 | NEW SWITCHING DEVICE ON A SEMICONDUCTOR ASSEMBLY |
| FR7614163 | 1976-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1089571A true CA1089571A (en) | 1980-11-11 |
Family
ID=9172979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA278,081A Expired CA1089571A (en) | 1976-05-11 | 1977-05-10 | Contacting structure on a semiconductor arrangement |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52137280A (en) |
| CA (1) | CA1089571A (en) |
| DE (1) | DE2721114A1 (en) |
| FR (1) | FR2351504A1 (en) |
| GB (1) | GB1545425A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4182995A (en) * | 1978-03-16 | 1980-01-08 | Rca Corporation | Laser diode with thermal conducting, current confining film |
| JPS5591890A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Photodiode |
| DE2856507A1 (en) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | SEMICONDUCTOR LASER DIODE |
| JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
| JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
| DE3332398A1 (en) * | 1983-09-08 | 1985-03-28 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | MULTIMODE LASER |
| CN116978999B (en) * | 2023-09-22 | 2024-01-02 | 南昌凯捷半导体科技有限公司 | Current-limited Micro-LED chip and manufacturing method thereof |
-
1976
- 1976-05-11 FR FR7614163A patent/FR2351504A1/en active Granted
-
1977
- 1977-05-09 GB GB19413/77A patent/GB1545425A/en not_active Expired
- 1977-05-10 CA CA278,081A patent/CA1089571A/en not_active Expired
- 1977-05-11 JP JP5419777A patent/JPS52137280A/en active Pending
- 1977-05-11 DE DE19772721114 patent/DE2721114A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| FR2351504A1 (en) | 1977-12-09 |
| JPS52137280A (en) | 1977-11-16 |
| GB1545425A (en) | 1979-05-10 |
| DE2721114A1 (en) | 1977-11-24 |
| FR2351504B1 (en) | 1980-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry | ||
| MKEX | Expiry |
Effective date: 19971112 |