GB1545425A - Contacting structure on a semiconductor arrangement - Google Patents
Contacting structure on a semiconductor arrangementInfo
- Publication number
- GB1545425A GB1545425A GB19413/77A GB1941377A GB1545425A GB 1545425 A GB1545425 A GB 1545425A GB 19413/77 A GB19413/77 A GB 19413/77A GB 1941377 A GB1941377 A GB 1941377A GB 1545425 A GB1545425 A GB 1545425A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor arrangement
- contacting structure
- contacting
- semiconductor
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7614163A FR2351504A1 (en) | 1976-05-11 | 1976-05-11 | NEW SWITCHING DEVICE ON A SEMICONDUCTOR ASSEMBLY |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1545425A true GB1545425A (en) | 1979-05-10 |
Family
ID=9172979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB19413/77A Expired GB1545425A (en) | 1976-05-11 | 1977-05-09 | Contacting structure on a semiconductor arrangement |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS52137280A (en) |
| CA (1) | CA1089571A (en) |
| DE (1) | DE2721114A1 (en) |
| FR (1) | FR2351504A1 (en) |
| GB (1) | GB1545425A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2146489A (en) * | 1983-09-08 | 1985-04-17 | Int Standard Electric Corp | Multimode laser |
| CN116978999A (en) * | 2023-09-22 | 2023-10-31 | 南昌凯捷半导体科技有限公司 | Current-limited Micro-LED chip and manufacturing method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4182995A (en) * | 1978-03-16 | 1980-01-08 | Rca Corporation | Laser diode with thermal conducting, current confining film |
| DE2856507A1 (en) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | SEMICONDUCTOR LASER DIODE |
| JPS5591890A (en) * | 1978-12-28 | 1980-07-11 | Fujitsu Ltd | Photodiode |
| JPS55153385A (en) * | 1979-05-18 | 1980-11-29 | Nippon Telegr & Teleph Corp <Ntt> | Current squeezing type semiconductor device |
| JPS5621387A (en) * | 1979-07-31 | 1981-02-27 | Fujitsu Ltd | Semiconductor luminescent device |
-
1976
- 1976-05-11 FR FR7614163A patent/FR2351504A1/en active Granted
-
1977
- 1977-05-09 GB GB19413/77A patent/GB1545425A/en not_active Expired
- 1977-05-10 CA CA278,081A patent/CA1089571A/en not_active Expired
- 1977-05-11 JP JP5419777A patent/JPS52137280A/en active Pending
- 1977-05-11 DE DE19772721114 patent/DE2721114A1/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2146489A (en) * | 1983-09-08 | 1985-04-17 | Int Standard Electric Corp | Multimode laser |
| CN116978999A (en) * | 2023-09-22 | 2023-10-31 | 南昌凯捷半导体科技有限公司 | Current-limited Micro-LED chip and manufacturing method thereof |
| CN116978999B (en) * | 2023-09-22 | 2024-01-02 | 南昌凯捷半导体科技有限公司 | Current-limited Micro-LED chip and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52137280A (en) | 1977-11-16 |
| CA1089571A (en) | 1980-11-11 |
| FR2351504A1 (en) | 1977-12-09 |
| DE2721114A1 (en) | 1977-11-24 |
| FR2351504B1 (en) | 1980-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |