JPS5591890A - Photodiode - Google Patents

Photodiode

Info

Publication number
JPS5591890A
JPS5591890A JP16481178A JP16481178A JPS5591890A JP S5591890 A JPS5591890 A JP S5591890A JP 16481178 A JP16481178 A JP 16481178A JP 16481178 A JP16481178 A JP 16481178A JP S5591890 A JPS5591890 A JP S5591890A
Authority
JP
Japan
Prior art keywords
semiconductor layer
refractive index
layer
satisfy
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16481178A
Other languages
Japanese (ja)
Other versions
JPS6157718B2 (en
Inventor
Kiyoshi Hanamitsu
Shigeo Osaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16481178A priority Critical patent/JPS5591890A/en
Publication of JPS5591890A publication Critical patent/JPS5591890A/en
Publication of JPS6157718B2 publication Critical patent/JPS6157718B2/ja
Granted legal-status Critical Current

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Abstract

PURPOSE: To make it possible to take out light in the direction perpendicular to the junction surface by making the thickness and refractive index of a semiconductor layer satisfy a specified relation.
CONSTITUTION: No.1 semiconductor layer 31 having refractive index n1 is sandwiched by No.2 semiconductor layer 32 having a larger forbidden band and smaller refractive index n2 than No.1 layer and semiconductor layer 33 having a larger forbidden band and smaller refrative index n3 than No.1 layer 31, and thereby a photodiode of multi-heterojunction structure is formed. The thickness d of No.1 semiconductor layer 31 is selected so as to satisfy d=(n1 2-n3 2)/(n1 2-n2 2), D=dK0(n1 2-n2 2)1/2, K0=2π/λ0, where λ0 is the light emission wavelength in free space, and 0<D<tan-1(d-1)1/2.
COPYRIGHT: (C)1980,JPO&Japio
JP16481178A 1978-12-28 1978-12-28 Photodiode Granted JPS5591890A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16481178A JPS5591890A (en) 1978-12-28 1978-12-28 Photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16481178A JPS5591890A (en) 1978-12-28 1978-12-28 Photodiode

Publications (2)

Publication Number Publication Date
JPS5591890A true JPS5591890A (en) 1980-07-11
JPS6157718B2 JPS6157718B2 (en) 1986-12-08

Family

ID=15800359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16481178A Granted JPS5591890A (en) 1978-12-28 1978-12-28 Photodiode

Country Status (1)

Country Link
JP (1) JPS5591890A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02146779A (en) * 1988-11-28 1990-06-05 Mitsubishi Monsanto Chem Co Double-hetero type epitaxial wafer
US7034342B2 (en) 2002-10-11 2006-04-25 Rohm Co., Ltd. Semiconductor light emitting device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137280A (en) * 1976-05-11 1977-11-16 Thomson Csf Contacting structure on semiconductor array

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137280A (en) * 1976-05-11 1977-11-16 Thomson Csf Contacting structure on semiconductor array

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02146779A (en) * 1988-11-28 1990-06-05 Mitsubishi Monsanto Chem Co Double-hetero type epitaxial wafer
US7034342B2 (en) 2002-10-11 2006-04-25 Rohm Co., Ltd. Semiconductor light emitting device

Also Published As

Publication number Publication date
JPS6157718B2 (en) 1986-12-08

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