JPS53104190A - Silicon avalanche photodiode - Google Patents

Silicon avalanche photodiode

Info

Publication number
JPS53104190A
JPS53104190A JP1811177A JP1811177A JPS53104190A JP S53104190 A JPS53104190 A JP S53104190A JP 1811177 A JP1811177 A JP 1811177A JP 1811177 A JP1811177 A JP 1811177A JP S53104190 A JPS53104190 A JP S53104190A
Authority
JP
Japan
Prior art keywords
avalanche photodiode
silicon avalanche
silicon
giving
noise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1811177A
Other languages
Japanese (ja)
Other versions
JPS611912B2 (en
Inventor
Toji Mukai
Hirobumi Ouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1811177A priority Critical patent/JPS53104190A/en
Publication of JPS53104190A publication Critical patent/JPS53104190A/en
Publication of JPS611912B2 publication Critical patent/JPS611912B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To obtain a uniform junction, where noise is small and the operating voltage is low, with a good yield by giving a P+ side as a light receiving face.
COPYRIGHT: (C)1978,JPO&Japio
JP1811177A 1977-02-23 1977-02-23 Silicon avalanche photodiode Granted JPS53104190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1811177A JPS53104190A (en) 1977-02-23 1977-02-23 Silicon avalanche photodiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1811177A JPS53104190A (en) 1977-02-23 1977-02-23 Silicon avalanche photodiode

Publications (2)

Publication Number Publication Date
JPS53104190A true JPS53104190A (en) 1978-09-11
JPS611912B2 JPS611912B2 (en) 1986-01-21

Family

ID=11962494

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1811177A Granted JPS53104190A (en) 1977-02-23 1977-02-23 Silicon avalanche photodiode

Country Status (1)

Country Link
JP (1) JPS53104190A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928390A (en) * 1982-08-10 1984-02-15 Nec Corp Semiconductor element with guard ring
JPH02298082A (en) * 1989-05-12 1990-12-10 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode
JP2018156984A (en) * 2017-03-15 2018-10-04 株式会社東芝 Photo detection element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5928390A (en) * 1982-08-10 1984-02-15 Nec Corp Semiconductor element with guard ring
JPH0468794B2 (en) * 1982-08-10 1992-11-04 Nippon Electric Co
JPH02298082A (en) * 1989-05-12 1990-12-10 Nippon Telegr & Teleph Corp <Ntt> Avalanche photodiode
JP2018156984A (en) * 2017-03-15 2018-10-04 株式会社東芝 Photo detection element

Also Published As

Publication number Publication date
JPS611912B2 (en) 1986-01-21

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