JPS53104190A - Silicon avalanche photodiode - Google Patents
Silicon avalanche photodiodeInfo
- Publication number
- JPS53104190A JPS53104190A JP1811177A JP1811177A JPS53104190A JP S53104190 A JPS53104190 A JP S53104190A JP 1811177 A JP1811177 A JP 1811177A JP 1811177 A JP1811177 A JP 1811177A JP S53104190 A JPS53104190 A JP S53104190A
- Authority
- JP
- Japan
- Prior art keywords
- avalanche photodiode
- silicon avalanche
- silicon
- giving
- noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To obtain a uniform junction, where noise is small and the operating voltage is low, with a good yield by giving a P+ side as a light receiving face.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1811177A JPS53104190A (en) | 1977-02-23 | 1977-02-23 | Silicon avalanche photodiode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1811177A JPS53104190A (en) | 1977-02-23 | 1977-02-23 | Silicon avalanche photodiode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53104190A true JPS53104190A (en) | 1978-09-11 |
JPS611912B2 JPS611912B2 (en) | 1986-01-21 |
Family
ID=11962494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1811177A Granted JPS53104190A (en) | 1977-02-23 | 1977-02-23 | Silicon avalanche photodiode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53104190A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928390A (en) * | 1982-08-10 | 1984-02-15 | Nec Corp | Semiconductor element with guard ring |
JPH02298082A (en) * | 1989-05-12 | 1990-12-10 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photodiode |
JP2018156984A (en) * | 2017-03-15 | 2018-10-04 | 株式会社東芝 | Photo detection element |
-
1977
- 1977-02-23 JP JP1811177A patent/JPS53104190A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5928390A (en) * | 1982-08-10 | 1984-02-15 | Nec Corp | Semiconductor element with guard ring |
JPH0468794B2 (en) * | 1982-08-10 | 1992-11-04 | Nippon Electric Co | |
JPH02298082A (en) * | 1989-05-12 | 1990-12-10 | Nippon Telegr & Teleph Corp <Ntt> | Avalanche photodiode |
JP2018156984A (en) * | 2017-03-15 | 2018-10-04 | 株式会社東芝 | Photo detection element |
Also Published As
Publication number | Publication date |
---|---|
JPS611912B2 (en) | 1986-01-21 |
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