JPS5397386A - Avalanche photo diode - Google Patents
Avalanche photo diodeInfo
- Publication number
- JPS5397386A JPS5397386A JP1227977A JP1227977A JPS5397386A JP S5397386 A JPS5397386 A JP S5397386A JP 1227977 A JP1227977 A JP 1227977A JP 1227977 A JP1227977 A JP 1227977A JP S5397386 A JPS5397386 A JP S5397386A
- Authority
- JP
- Japan
- Prior art keywords
- photo diode
- avalanche photo
- avalanche
- expand
- lowering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To lower the noise and the active voltage to expand the wavelength band, by lowering the field intensity at the avalanche region and increasing the ionization coefficient rate between the electron and the positive hole.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1227977A JPS5397386A (en) | 1977-02-07 | 1977-02-07 | Avalanche photo diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1227977A JPS5397386A (en) | 1977-02-07 | 1977-02-07 | Avalanche photo diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5397386A true JPS5397386A (en) | 1978-08-25 |
Family
ID=11800915
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1227977A Pending JPS5397386A (en) | 1977-02-07 | 1977-02-07 | Avalanche photo diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5397386A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5413784A (en) * | 1977-07-01 | 1979-02-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo detector |
JPS5416196A (en) * | 1977-07-06 | 1979-02-06 | Nec Corp | Hetero junction avalanche photo diode |
JPS5575273A (en) * | 1978-12-04 | 1980-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light detecting device |
JPS5643781A (en) * | 1979-09-17 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photodetecting element |
US5150176A (en) * | 1992-02-13 | 1992-09-22 | Motorola, Inc. | PN junction surge suppressor structure with moat |
-
1977
- 1977-02-07 JP JP1227977A patent/JPS5397386A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5413784A (en) * | 1977-07-01 | 1979-02-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo detector |
JPS5631908B2 (en) * | 1977-07-01 | 1981-07-24 | ||
JPS5416196A (en) * | 1977-07-06 | 1979-02-06 | Nec Corp | Hetero junction avalanche photo diode |
JPS6157716B2 (en) * | 1977-07-06 | 1986-12-08 | Nippon Electric Co | |
JPS5575273A (en) * | 1978-12-04 | 1980-06-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light detecting device |
JPS5643781A (en) * | 1979-09-17 | 1981-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photodetecting element |
US5150176A (en) * | 1992-02-13 | 1992-09-22 | Motorola, Inc. | PN junction surge suppressor structure with moat |
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