JPS5527687A - Measuring method of coefficient of ionization by carrier collision - Google Patents

Measuring method of coefficient of ionization by carrier collision

Info

Publication number
JPS5527687A
JPS5527687A JP10157578A JP10157578A JPS5527687A JP S5527687 A JPS5527687 A JP S5527687A JP 10157578 A JP10157578 A JP 10157578A JP 10157578 A JP10157578 A JP 10157578A JP S5527687 A JPS5527687 A JP S5527687A
Authority
JP
Japan
Prior art keywords
semiconductor layer
ionization
coefficient
cast
wave length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10157578A
Other languages
Japanese (ja)
Other versions
JPS567296B2 (en
Inventor
Hiroaki Ando
Hiroshi Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10157578A priority Critical patent/JPS5527687A/en
Publication of JPS5527687A publication Critical patent/JPS5527687A/en
Publication of JPS567296B2 publication Critical patent/JPS567296B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure a coefficient of ionization by carrier collision by means of an amount of photo current produced when a light ray with a special wave length is cast on a semiconductor photodiode.
CONSTITUTION: A bias power source 26 is applied between both electrodes 23 and 24 through an ammeter 25, while a reverse voltage is applied to a PN junction J to form a depletion layer that stretches toward a semiconductor layer Q1. A light ray L1 with a wave length of λ1 that is absorbed within only a semiconductor layer Q2, is cast from Q2 side to obtain photo current in the semiconductor layer Q2 due to an electro-positive hole pair. Then another light ray L2 with a wave length of λ2 that is absorbed within only a semiconductor layer Q3 is cast to obtain photo current in the semiconductor layer Q3due to the electro-positive hole pair; thus evaluating a coefficient of ionization by carrier collision.
COPYRIGHT: (C)1980,JPO&Japio
JP10157578A 1978-08-21 1978-08-21 Measuring method of coefficient of ionization by carrier collision Granted JPS5527687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10157578A JPS5527687A (en) 1978-08-21 1978-08-21 Measuring method of coefficient of ionization by carrier collision

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10157578A JPS5527687A (en) 1978-08-21 1978-08-21 Measuring method of coefficient of ionization by carrier collision

Publications (2)

Publication Number Publication Date
JPS5527687A true JPS5527687A (en) 1980-02-27
JPS567296B2 JPS567296B2 (en) 1981-02-17

Family

ID=14304186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10157578A Granted JPS5527687A (en) 1978-08-21 1978-08-21 Measuring method of coefficient of ionization by carrier collision

Country Status (1)

Country Link
JP (1) JPS5527687A (en)

Also Published As

Publication number Publication date
JPS567296B2 (en) 1981-02-17

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