JPS5467393A - High dielectric strength semiconductor element - Google Patents

High dielectric strength semiconductor element

Info

Publication number
JPS5467393A
JPS5467393A JP13342377A JP13342377A JPS5467393A JP S5467393 A JPS5467393 A JP S5467393A JP 13342377 A JP13342377 A JP 13342377A JP 13342377 A JP13342377 A JP 13342377A JP S5467393 A JPS5467393 A JP S5467393A
Authority
JP
Japan
Prior art keywords
layer
electrode
dielectric strength
high dielectric
windows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13342377A
Other languages
Japanese (ja)
Inventor
Shinji Okuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13342377A priority Critical patent/JPS5467393A/en
Publication of JPS5467393A publication Critical patent/JPS5467393A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE: To obtain a device of high dielectric strength by increasing the sensitivity to photo control while preventing the increase in unnecessary electrostatic coupling.
CONSTITUTION: Electrodes 17, 18 extend to the outside of p layers 14, 15 on an insulation film 12. Windows 19 are opened in the electrode 18 right above the junction exposed parts by p layer 15 and n layer 13. This structure enables the electrodes 17, 18 to play the role of field as well and concentration of electric fields at the pn junctions by the layers 14, 15 and layer 13 to be obviated. The windows 19 decrease the leakage at the high frequency owing to the undesired capacity increased by he electrode 18 of a large area, substantially reduce the electrode area and make possible firing of SCR through light radiation.
COPYRIGHT: (C)1979,JPO&Japio
JP13342377A 1977-11-09 1977-11-09 High dielectric strength semiconductor element Pending JPS5467393A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13342377A JPS5467393A (en) 1977-11-09 1977-11-09 High dielectric strength semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13342377A JPS5467393A (en) 1977-11-09 1977-11-09 High dielectric strength semiconductor element

Publications (1)

Publication Number Publication Date
JPS5467393A true JPS5467393A (en) 1979-05-30

Family

ID=15104417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13342377A Pending JPS5467393A (en) 1977-11-09 1977-11-09 High dielectric strength semiconductor element

Country Status (1)

Country Link
JP (1) JPS5467393A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583450A (en) * 1981-06-30 1983-01-10 Nippon Telegr & Teleph Corp <Ntt> Optical coupling pnpn channel switch circuit
JPS5812361A (en) * 1981-07-16 1983-01-24 Nippon Telegr & Teleph Corp <Ntt> Photo-driven p-n-p-n switch element
JPS6195581A (en) * 1984-10-16 1986-05-14 Toshiba Corp Photocoupler
JPS61270867A (en) * 1985-05-25 1986-12-01 Matsushita Electric Works Ltd Semiconductor device
JPH0313757U (en) * 1989-06-26 1991-02-12

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583450A (en) * 1981-06-30 1983-01-10 Nippon Telegr & Teleph Corp <Ntt> Optical coupling pnpn channel switch circuit
JPS5812361A (en) * 1981-07-16 1983-01-24 Nippon Telegr & Teleph Corp <Ntt> Photo-driven p-n-p-n switch element
JPS6195581A (en) * 1984-10-16 1986-05-14 Toshiba Corp Photocoupler
JPH0224389B2 (en) * 1984-10-16 1990-05-29 Tokyo Shibaura Electric Co
JPS61270867A (en) * 1985-05-25 1986-12-01 Matsushita Electric Works Ltd Semiconductor device
JPH0551187B2 (en) * 1985-05-25 1993-07-30 Matsushita Electric Works Ltd
JPH0313757U (en) * 1989-06-26 1991-02-12

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