JPS53120370A - Measuring method of diffusion distance of minority carriers and its apparatus - Google Patents

Measuring method of diffusion distance of minority carriers and its apparatus

Info

Publication number
JPS53120370A
JPS53120370A JP3474877A JP3474877A JPS53120370A JP S53120370 A JPS53120370 A JP S53120370A JP 3474877 A JP3474877 A JP 3474877A JP 3474877 A JP3474877 A JP 3474877A JP S53120370 A JPS53120370 A JP S53120370A
Authority
JP
Japan
Prior art keywords
measuring method
minority carriers
diffusion distance
semiconductor
depletion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3474877A
Other languages
Japanese (ja)
Other versions
JPS5538054B2 (en
Inventor
Kiyoko Nagai
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP3474877A priority Critical patent/JPS53120370A/en
Publication of JPS53120370A publication Critical patent/JPS53120370A/en
Publication of JPS5538054B2 publication Critical patent/JPS5538054B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure any of the current flowing in semiconductor, surface potential, depletion layer capacity or depletion layer width or their combinations by putting the semiconductor surface in a depletion or inversion state by the use of an insulation electrode and radiating light to the surface thereof.
COPYRIGHT: (C)1978,JPO&Japio
JP3474877A 1977-03-30 1977-03-30 Measuring method of diffusion distance of minority carriers and its apparatus Granted JPS53120370A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3474877A JPS53120370A (en) 1977-03-30 1977-03-30 Measuring method of diffusion distance of minority carriers and its apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3474877A JPS53120370A (en) 1977-03-30 1977-03-30 Measuring method of diffusion distance of minority carriers and its apparatus

Publications (2)

Publication Number Publication Date
JPS53120370A true JPS53120370A (en) 1978-10-20
JPS5538054B2 JPS5538054B2 (en) 1980-10-02

Family

ID=12422940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3474877A Granted JPS53120370A (en) 1977-03-30 1977-03-30 Measuring method of diffusion distance of minority carriers and its apparatus

Country Status (1)

Country Link
JP (1) JPS53120370A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05281141A (en) * 1992-03-30 1993-10-29 Mitsui Mining & Smelting Co Ltd Method and apparatus for photoluminescence measurement in crystal
JPH0855893A (en) * 1994-08-12 1996-02-27 Nec Corp Measuring element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5198953A (en) * 1975-02-26 1976-08-31 mos daioodono raifutaimu sokuteiho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5198953A (en) * 1975-02-26 1976-08-31 mos daioodono raifutaimu sokuteiho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05281141A (en) * 1992-03-30 1993-10-29 Mitsui Mining & Smelting Co Ltd Method and apparatus for photoluminescence measurement in crystal
JPH0855893A (en) * 1994-08-12 1996-02-27 Nec Corp Measuring element

Also Published As

Publication number Publication date
JPS5538054B2 (en) 1980-10-02

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