JPS57199277A - Semiconductor luminous elements and manufacture thereof - Google Patents

Semiconductor luminous elements and manufacture thereof

Info

Publication number
JPS57199277A
JPS57199277A JP8416981A JP8416981A JPS57199277A JP S57199277 A JPS57199277 A JP S57199277A JP 8416981 A JP8416981 A JP 8416981A JP 8416981 A JP8416981 A JP 8416981A JP S57199277 A JPS57199277 A JP S57199277A
Authority
JP
Japan
Prior art keywords
semiconductor crystal
crystal layer
luminous
conductive type
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8416981A
Other languages
Japanese (ja)
Inventor
Keijiro Hirahara
Haramasa Komatsu
Tatsuro Beppu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8416981A priority Critical patent/JPS57199277A/en
Publication of JPS57199277A publication Critical patent/JPS57199277A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve the efficiency of the photoconnection to the photofiber with small core diameter by a method wherein the current is concentrated by the first semiconductor crystal layer utilizing the hetero connection as the luminous junction. CONSTITUTION:The second conductive type semiconductor crystal layer 32 excluding the central part thereof is laminated on the first conductive type semiconductor substrate crystal 31. The first conductive type second semiconductor crystal layer 33 is laminated on the first semiconductor crystal layer 32 and the surface of the central part of the substrate crystal 31. These multilayered semiconductor crystal layers are internally provided with the luminous junction 37. The peripheral surface of these multilayered semiconductor crystal layers is coated with the ohmic electrode 35. The current is concentrated by the first semiconductor crystal layer 32 making the luminous region 37 narrower. Furthermore the forbidden band width of the upper semiconductor crystal is made wider than that of the lower semiconductor crystal by means of utilizing the hetero connection as the luminous junction. Consequently the light from the luminous region 37 may be fetched upward.
JP8416981A 1981-06-01 1981-06-01 Semiconductor luminous elements and manufacture thereof Pending JPS57199277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8416981A JPS57199277A (en) 1981-06-01 1981-06-01 Semiconductor luminous elements and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8416981A JPS57199277A (en) 1981-06-01 1981-06-01 Semiconductor luminous elements and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57199277A true JPS57199277A (en) 1982-12-07

Family

ID=13822989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8416981A Pending JPS57199277A (en) 1981-06-01 1981-06-01 Semiconductor luminous elements and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57199277A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873170A (en) * 1981-10-27 1983-05-02 Fujitsu Ltd Light emitting semiconductor device
JPS59213179A (en) * 1983-05-19 1984-12-03 Toshiba Corp Light emitting element
JPS609181A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Optical semiconductor device
JPS60145677A (en) * 1984-01-09 1985-08-01 Oki Electric Ind Co Ltd Semiconductor surface light emitting element
JPS61166186A (en) * 1985-01-18 1986-07-26 Oki Electric Ind Co Ltd Semiconductor light element
JPS61258483A (en) * 1985-05-11 1986-11-15 Oki Electric Ind Co Ltd Semiconductor surface light-emitting element
JPS6272185A (en) * 1985-09-26 1987-04-02 Agency Of Ind Science & Technol Negative resistance optical device
US4680602A (en) * 1983-09-06 1987-07-14 Nec Corporation Light emitting diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5679483A (en) * 1979-12-03 1981-06-30 Sharp Corp Semiconductor luminous element and its method of preparation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5679483A (en) * 1979-12-03 1981-06-30 Sharp Corp Semiconductor luminous element and its method of preparation

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873170A (en) * 1981-10-27 1983-05-02 Fujitsu Ltd Light emitting semiconductor device
JPS59213179A (en) * 1983-05-19 1984-12-03 Toshiba Corp Light emitting element
JPS609181A (en) * 1983-06-29 1985-01-18 Fujitsu Ltd Optical semiconductor device
US4680602A (en) * 1983-09-06 1987-07-14 Nec Corporation Light emitting diode
JPS60145677A (en) * 1984-01-09 1985-08-01 Oki Electric Ind Co Ltd Semiconductor surface light emitting element
JPS61166186A (en) * 1985-01-18 1986-07-26 Oki Electric Ind Co Ltd Semiconductor light element
JPS61258483A (en) * 1985-05-11 1986-11-15 Oki Electric Ind Co Ltd Semiconductor surface light-emitting element
JPS6272185A (en) * 1985-09-26 1987-04-02 Agency Of Ind Science & Technol Negative resistance optical device

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